We have been investigating two key aspects of diamond device technology, with the goal of fabricating active electronic devices. We have developed an ohmic contact metallization with a specific contact resistivity of 2 × 10 −5 Ω- cm 2 on heavily doped diamond films. Ion implantation studies indicate that boron implanted at a substrate temperature of 80 K with a multiple implant scheme (25 keV, 1.5 × 10 14 B +/cm 2; 50 keV, 2.1 × 10 14 B +/cm 2; and 100 keV, 3.0 × 10 14 B +/cm 2), and annealed at 1273 K in nitrogen can be electrically activated, resulting in a p-type conducting layer 210 nm thick. Van der Pauw resistivity and Hall effect measurements as a function of temperature indicated a room temperature carrier concentration of 5 × 10 15/cm 3, carrier mobility of 30 cm 2/V-s. Preliminary testing of an insulated gate field effect transistor fabricated in this layer has been carried out. Current saturation over a wide range of gate voltages and pinch-off at a gate bias of 12 V have been observed, with a measured transconductance of 3.9 μS/mm.