Abstract
We have investigated the use of various metals (Al, Au, Ti and Ti/Au double layers) for use as contacts to doped and undoped diamond films. I-V and C-V measurements have been made at room temperature and above. All the metals show rectifying behaviour on undoped films, and near-Ohmic behaviour on doped films. Physical analysis (XRD, SIMS and XPS) indicates that the Ti/Au system is unstable at temperatures as low as 450°C, and therefore cannot be considered as a reliable metallisation scheme for diamond devices.
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