In this study we report on an investigation of the degree of damage recovery after multi-implantation of 12C into diamond as a function of dose and annealing temperature. Three different doses spread over energies of 150, 120, 80 and 50 keV at an implantation temperature of −190°C were used: 5.25 × 10 15, 2.9 × 10 15 and 5.25 × 10 14 ions cm 2 . After the completion of each implantation the diamond was allowed to warm up to room temperature, whereupon ion channeling of 1.0 MeV protons was used to locate the three major diamond channels, the (100), (111) and (110). Finally 1.2 MeV He + ions were then used to produce trans-axial scans of each channel to a depth of ~ 2700 Å. The diamond was then annealed at 630, 1050, 1300 and finally 1500°C in an inert argon atmosphere. Channeling measurements on each of the axes were repeated after each anneal. The results indicate that damage removal is initiated from the surface, and advances progressively into the diamond as the annealing temperature is increased. The highest dose of 5 × 10 15 ions cm 2 introduces thermally stable defects into the damaged region which are not observed for the other implantation doses.