Switching Devices Research Articles

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory.

With the increasing demands and complexity of the neuromorphic computing schemes utilizing highly efficient analog resistive switching devices, understanding the apparent capacitive and inductive effects in device operation is of paramount importance. Here, we present a systematic array of characterization methods that unravel two distinct voltage-dependent regimes demonstrating the complex interplay between the dynamic capacitive and inductive effects in volatile perovskite-based memristors: (1) a low voltage capacitance-dominant and (2) an inductance-dominant regime evidenced by the highly correlated hysteresis type with nonzero crossing, the impedance responses, and the transient current characteristics. These dynamic capacitance- and inductance-dominant regimes provide fundamental insight into the resistive switching of memristors governing the synaptic depression and potentiation functions, respectively. More importantly, the pulse width-dependent and long-term transient current measurements further demonstrate a dynamic transition from a fast capacitive to a slow inductive response, allowing for the tailored stimulus programming of memristor devices to mimic synaptic functionality.

Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction.

Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high-resolution ultraviolet imaging equipment, and multiband photoelectric detection. However, the current low optoelectronic performance limits the development of such polar switching devices. Here, we construct a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 (IGTO) nanowires (NWs) pn junction structure. This unique nanowire/thin film structure allows GaN and IGTO to dominate the absorption of light at different wavelengths, resulting in a highly bipolar photoresponse. The device has a responsivity of 2.04 A/W and a normalized detectivity of 7.18 × 1013 Jones at 254 nm and a responsivity of -2.09 A/W and a normalized detectivity of -7 × 1013 Jones at 365 nm, both at zero bias. In addition, it has an extremely high Ilight/Idark ratio of 1.05 × 105 and ultrafast response times of 2.4/1.9 ms (at 254 nm) and 5.7/5.2 ms (at 365 nm). These excellent properties are attributed to the high specific surface area of the one-dimensional nanowire structure and the abundant voids generated by the nanowire network to enhance the absorption of light, and the p-n junction structure enables the rapid separation and transfer of photogenerated electron-hole pairs. Our findings provide a feasible strategy for high-performance wavelength-controlled polarity switching devices.

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles.

Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.

π-Conjugated nitroxide radicals for resistive switching devices

π-Conjugated nitroxide radicals for resistive switching devices

Highly Selective Protic-Solvent-Mediated Organic-Inorganic Hybrid Cuprous Bromides Achieving Structural Transformation.

The potential application of stimuli-responsive hybrid copper halides in information storage and switch devices has generated significant interest. However, their transformation mechanism needs to be further studied deeply. Herein, two zero-dimensional (0D) organic-inorganic hybrids, namely, (TBA)CuBr2 (1) with linear [CuBr2]- units and (TBA)2Cu4Br6 (2) with [Cu4Br6]2- clusters (TBA+ = (C4H9)4N+), are synthesized using simple solvent evaporation approaches. Interestingly, upon exposure to distinct protic solvents, such as methanol, ethanol, ethylene glycol, or hot water, 1 undergoes a transformation into 2 with varying degrees of transition, accompanied by a change in luminescence color from cyan to orange (or mixed color) under high-energy emission (e.g., 254 nm) excitation. Hot water can trigger 1 to completely transform into 2 because of its large contact angle difference in the solvents. Furthermore, 2 can be converted back to 1 through a simple solid-state mechanochemical reaction. Additionally, the structure of 2 remains unchanged even after immersion in 80 °C H2O for 168 h due to the dense organic framework. This study provides valuable insights for exploring reversible structural transformation materials in the 0D metal halide system.

Active tunable terahertz multifunctional device switching from multiple narrowband perfect absorption to plasma-induced transparency

This paper puts forward a terahertz multifunctional device based on reversible phase transition property of VO2, which can realize active switching from multiple narrowband perfect absorption to plasma-induced transparency (PIT). By means of impedance matching theory and electric field distributions, we analyze the mechanism behind three absorption formants, and the absorption spectrum is consistent with data obtained from coupled mode theory. Three perfect absorption formants at the frequencies of 4.37 THz, 5.27 THz and 6.1 THz are extremely sensitive to the changes in external environment, which possesses a higher sensitivity up to 1.29 THz/RIU and FOM up to 9.45, indicating prominent sensing performance. By regulating the Fermi energy in a unified manner, three absorption formants can be observed within a specific frequency range. When the Fermi energy of three graphene patterns is individually manipulated, trimodal narrowband perfect absorption will transform into one bimodal and two unimodal ones. While the device is under PIT operation mode, two transmission windows are formed at 5.1 THz and 5.92 THz. It can be concluded that dual PIT arises from the mutual coupling between two bright modes and a dark mode formed by patterned graphene, when combined with the transmission spectra and the corresponding electric field distributions. Similarly, the modulation of graphene Fermi energy can realize dynamic tuning of the transmission performance, and single PIT can be achieved when graphene patterns are regulated separately. In summary, the proposed device can meet various functional requirements for multiple perfect absorption and PIT under different conditions and promote developments of terahertz technology in fields of environmental detection, electromagnetic modulation, multi-function devices and other application.

Mechanism for Local-Atomic Structure Changes in Chalcogenide-based Threshold-Switching Devices.

Threshold-switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis of multinary compounds. Furthermore, after threshold switching, the local structures gradually evolve to more stable energy states owing to the unstable homopolar bonds. Herein, based on trap analysis, DFT simulations, and operando XPS analysis, it is determined that the threshold switching mechanism is deeply related to the charged state of Se-Se homopolar defects. A threshold switching device is demonstrated with an excellent performance through the modification of the local structure via the addition of alloying elements and investigating the time-dependent trap evolution. The results concerning the trap dynamics of local atomic structures in threshold switching phenomena may be used to improve the design of amorphous chalcogenides.

A modified T-type multilevel inverter for renewable energy applications

The primary challenge in integrating renewable resources into grids using multilevel inverters (MLI) is the need for many separate DC sources and switching device counts. Transformer-based multilevel inverters (TMIs) have emerged to address this issue, aiming to minimize system components and boost source voltage with a single DC source. This research article introduces a novel TMI topology that utilizes only a single DC source and incorporates ten switches to produce good-quality load voltage with high magnitude. The proposed TMI offers several structural advantages, including self-galvanic isolation, reduced switching devices and uniform voltage levels across all turn ratios. Additionally, the TMI operates a switching method called pulse width modulation, which provides the gating pulses to all the power semiconductor devices in the proposed TMI. An experimental model has been created in a laboratory environment, and simulations are performed using the MATLAB/Simulink platform to assess the effectiveness of the suggested TMI. Furthermore, a comparison between the suggested TMI circuit and other recent TMI designs with similar characteristics is performed. This comparison is carried out to assess and validate the superior features of the proposed TMI over the alternative designs.

Dispatchable region for distributed renewable energy generation in reconfigurable AC–DC distribution networks with soft open points

The dispatchable region (DR) describes the ability of a power system to adapt to the variability of distributed renewable energy (DRE) generation. Switchable devices such as soft open points (SOPs) and tie switches enable the AC–DC distribution network to flexibly cope with DRE power fluctuations. Currently, research on DRs seldom considers the effects of SOPs and reconfiguration with tie switches in AC–DC distribution networks, which prevents accurate evaluation of DR for this type of network. To bridge this gap, this paper formulates DRs for DRE generation in an AC–DC distribution network considering SOPs and reconfiguration with tie switches. The original model for deriving DRs is typically nonconvex, and the DR boundaries are intractable because of nonlinear power flow equations and binary variables of tie switches. Accordingly, this paper employs the outer polyhedral approximation and convex hull relaxation to approximate the original DR. An efficient adaptive constraint generation algorithm is developed to search for boundaries of the approximated DR. The numerical results show that the proposed model can effectively adapt to the DR of reconfigurable AC–DC distribution networks with SOPs and verify the accuracy and computational efficiency of the proposed method.

Extended high gain DC‐DC converter with switched‐inductors, switched‐capacitors and soft‐switching: Analysis and implementation

AbstractThis paper proposes an extended DC‐DC converter with high voltage conversion ratio and soft‐switching ability. The proposed converter has active switched‐inductors, switched‐capacitors included in the conventional high gain converter and operates in continuous conduction mode (CCM). Simple auxiliary resonant elements are added on the primary leg of the converter to provide design freedom for soft‐switching operation. The significant merits of the proposed converter are lesser voltage and current stresses, high voltage gain with reduced component count and better efficiency. Additional feature of this converter is soft‐switching operation under different load conditions and duty ratios without considerably increasing stresses. The zero voltage switching (ZVS) turn‐on operation is obtained for all switching devices. Therefore, switching power losses are minimized greatly. This paper presents the description, principles of operation and steady state analysis in comparison with the existing high gain converters. The theoretical analysis is verified with a 350 W prototype operated at input is 20 V and output is 220 V. The overall efficiency achieved is 96.7%. The obtained results confirm ZVZCS operation at full load.

Cycle endurance and failure in ITO/MEH-PPV/Al resistive switching devices

Improving resistive memory reliability requires understanding some bottlenecks, i.e., control and stability of the memory parameters during endurance cycling and physical degradation that shows up in memories that contain metal oxides. The physical degradation of indium tin oxide/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene]/aluminum (ITO/MEH-PPV/Al) devices was studied through I–V sweeps and cycle endurance with different compliance currents (IC), in addition to scanning electron microscopy (SEM), energy-dispersive X-Ray spectroscopy (EDS), and Raman spectroscopy. The devices showed a dependence of the conductance quantization G0 in current compliance IC, i.e., the G0 histogram shows different distribution shape after changing IC. After many cycles, the devices presented partial destruction in the active area (physical alteration) followed by memory parameter degradation and finally failing (no commuting anymore). SEM/EDS measurements in the deteriorated region showed that the aluminum electrode was removed and only remnants of the polymer remained. The Raman spectroscopy analyses focused on changes in the polymeric structure caused by the endurance cycle, such as changes in chain planarity, which is related to the band around 966 cm−1 that was shifted to lower wavenumbers (965 cm−1) together with the increase in intensity which indicates less planar conformations when compared to the non-degraded area. Alteration of the conjugation length was evidenced by the contribution around 1581 cm−1. In this case, we can see a shift: of 1581 cm−1 to 1584 cm−1, for the non-degraded area and degraded area, respectively. Both results indicate a decrease in the conjugation length. All these changes show fragmentation of the polymer chain as a result of the endurance cycle.

All-fiber fast acousto-optic temporal control of tunable optical pulses

We demonstrate a new all-fiber electrically tunable modulation method which significantly reduces the response time of a Bragg grating acousto-optic modulator. A 4 cm long device is fabricated with a 1 cm grating inscribed in a suspended core fiber. An acoustic pulse train is switched out of phase along the fiber, damping unwanted natural resonant vibrations inside the grating. The device rise time is decreased from 56 to 9 µs by tuning the duty cycle of the driven electrical signal, contributing to achieve the shortest switching time of 15.6 µs. This tunable temporal response reveals unique features to change the profile of optical pulses. High pulse modulation depths are achieved employing a compact acousto-optic modulator, pointing to fast switching of all-fiber photonic devices.

Bi-level robust planning of hydrogen energy system for integrated electricity–heat–hydrogen energy system considering multimode utilization of hydrogen

This paper proposes a bi-level robust planning model to address the rational configuration of a hydrogen energy system, accounting for the impact of wind power uncertainty in an integrated electricity–heat–hydrogen energy system (IEHHES) with the increasing wind power penetration. The upper-level problem aims to determine the capacity of the hydrogen energy system in this system, whereas the lower-level problem is formulated as a two-stage robust optimization model to simulate the typical daily operational scheme of the system, considering uncertain wind turbine output and the on/off switching of devices. This model considers multiple hydrogen utilization modes and the physical characteristics of various hydrogen storage tanks. The complex bi-level robust model is intractable directly. Therefore, this bi-level robust planning model is initially decomposed into planning and operation subproblems. These subproblems are then can be solved in parallel using the alternating direction method of multipliers (ADMM) algorithm; the planning subproblem, a quadratic programming model, is solved using a commercial solver; the operating subproblem, a two-stage robust optimization model, is solved using the column and constraint generation algorithm. Finally, case studies validate the advantages and effectiveness of the developed model and algorithm.

Modeling defect-level switching for nonlinear and hysteretic electronic devices

Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [Yin et al., Phys. Rev. Appl. 15, 014014 (2021)]; we termed these defect-level switching (DLS) devices. DLS devices feature all-electronic resistive switching and thus are volatile because of the “voltage-time” dilemma. However, the dynamics of volatile resistive switches may be valuable for emerging applications such as selectors in crosspoint memory and neuromorphic computing concepts. To design circuits using these volatile resistive switches, accurate modeling is essential. In this work, we develop an accurate and analytical model to describe the switching in DLS devices, based on the established theories of point defect metastability in Cu(In,Ga)Se2 (CIGS) and II–VI semiconductors. The analytical nature of our model allows for time-efficient simulations of dynamical behavior of DLS devices. We model the time durations of SET and RESET programming pulses, which can be exponentially shortened with respect to the pulse amplitude. We also demonstrate the concept of inverse design: given desired resistance states, the width and amplitude of the programming signal can be chosen accordingly.

Effect of SiO2-doped nanoparticle/electrostatic spinning system on the electro-optical properties of polymer dispersed liquid crystals for smart windows

ABSTRACT Polymer Dispersed Liquid Crystal (PDLC) films are attracting increasing attention as versatile and innovative material for use in electrical switching and flexible devices. This paper investigates the effect of a Poly(methyl methacrylate (PMMA) nanospun membrane system doped with SiO2 nanoparticles on the electro-optical properties and transmittance/voltage slopes of thiol- and acrylate-based PDLC films. Experimental samples were prepared for testing by adding mixtures of liquid crystals and crosslinkers in different proportions to liquid crystal cassettes doped with PMMA/SiO2 nanospun membranes. The size of the polymer mesh was found to influence all parameters of PDLC. The phase separation process, which determines the morphology and electro-optical properties of PDLC films, is directly affected by the doping of different components of PMMA/SiO2. The doping of the PMMA/SiO2 system resulted in improved optoelectronic properties of PDLC films, significantly enhanced weathering resistance, and increased the degree of intelligent regulation of the transmittance of PDLC films. Thus, by developing PDLC-doped reticulated nanofibre films with faster response times and better electro-optical properties, the potential for technological applications of PDLC-based devices in optical windows, displays, energy storage and flexible devices can be significantly enhanced.

Low-power perovskite-based threshold switching memristor for artificial nociceptor

Organic-inorganic halide perovskites (OHPs) with good ion diffusion paths are effective functional materials for simulating biological neurons. In this work, we utilize the Ag diffusion threshold switching phenomenon in FAPbI3 films to investigate the nociceptor function. The threshold switching device exhibits a low threshold voltage (0.075 V) and a large characteristic switching ratio of 107 in volatile resistance switching, along with a minimum switching slope (SS< 2.6 mV/dec), and the device achieves low power consumption of 150 pW. Importantly, the nociceptor functions of threshold firing and sensitization have been successfully simulated based on the volatile threshold switching characteristics, which demonstrates the potential in practical neuromorphic applications.

Tunable terahertz polarization conversion and absorption devices based on metamaterials

Metamaterials, as novel materials, have electromagnetic behaviors that can be realized by rationally designing the unit structure. It plays an important role in the research of terahertz functional devices. Switchable terahertz devices are constructed by flexibly combining the excellent properties of graphene and vanadium dioxide (VO2) with the application potential of terahertz technology. When the VO2 is in the metallic state and the graphene Fermi energy level is 0 eV, the device behaves as a broadband polarization switching device. It can realize cross-polarization conversion for the incident electromagnetic wave in the range of 2–4.2 THz. When the VO2 is in the insulating state and the graphene Fermi energy level is 0.9 eV, the device is an absorption device. The absorption rate can reach more than 99% at 4 THz. In addition, the polarization conversion ratio (PCR) as well as the absorption rate of the device can be tuned independently. This actively tunable switchable terahertz device provides ideas for dynamically controlling terahertz, bringing more possibilities for various applications such as terahertz imaging, stealth, and communication.

Effect of rapid thermal annealing on DC performance of Mg0.30Zn0.70O/Cd0.15Zn0.85O MOSHFET

This study focuses on a cost-effective method for fabrication of a metal oxide semiconductor-heterostructure field effect transistor (MOSHFET) based on MgZnO/CdZnO (MCO) using dual ion beam sputtering (DIBS), in contrast to the more expensive epitaxial growth system. The MOSHFETs developed in this research exhibit notable characteristics, such as a substantial two-dimensional electron gas (2DEG) transconductance (∼2.6 mS), a high ION/IOFF response ratio in the order of 108, and minimal gate leakage current. Furthermore, we explore the impact of rapid thermal annealing (RTA) on the drain current at various temperatures (600 °C and 800 °C). The results indicate a fourfold improvement in drain current compared to unannealed conditions, primarily attributed to reduced contact resistance and no degradation in term of MgZnO/CdZnO structure. Additionally, an analysis of post-RTA treatment under a nitrogen (N2) atmosphere on gate leakage current is presented. The investigation spans temperatures ranging from 400 °C to 800 °C, revealing that above 600 °C (gate leakage at 400 °C–600 °C is around ∼10−9 A), gate leakage in HFET is augmented by one order of magnitude (∼10−8 A) due to a phase change in the dielectric. These findings underscore the feasibility of DIBS-grown MCO MOSHFETs as an economical solution for the mass production of switching devices and sensors.

Exploring the Reconfigurable Memory Effect in Electroforming-Free YMnO3-Based Resistive Switches: Towards a Tunable Frequency Response.

Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free YMnO3 (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies.

Tunable Nonlinear Optical Bistability Based on the Fabry–Perot Cavity Composed of Dirac Semimetal and Two Symmetric Photonic Crystals

In this paper, we study the nonlinear optical bistability (OB) in a symmetrical multilayer structure. This multilayer structure is constructed by embedding a nonlinear three-dimensional Dirac semimetal (3D DSM) into a Fabry–Perot cavity composed of one-dimensional photonic crystals. The OB phenomenon stems from the third order nonlinear conductivity of 3D DSM. The local field of resonance mode could enhance the nonlinearity and reduce the thresholds of OB. This structure achieves the tunability of OB due to the fact that the transmittance could be modulated by the Fermi energy. It is found that the OB threshold and threshold width could be remarkably reduced by increasing the Fermi energy of the 3D DSM. Besides, we also found that the OB curve depends heavily on the angle of incidence of the incident light, the structural parameters of the Fabry–Perot cavity, and the position of the 3D DSM inside the cavity. After parameter optimization, we obtained OB with a threshold of 106 V/m. We believe this simple multilayer structure could provide a reference idea for realizing low-threshold and tunable all-optical switching devices.