Device Parameters Research Articles

Numerical simulation of a nebulizer with multiple orifices

A vibrating mesh nebulizer is a medical device that can break liquid medication into an aerosol of tiny droplets so that patients can inhale them to treat diseases. The volumetric flow rate of this kind of nebulizer is determined by many factors, including the orifice geometry, the vibration amplitude and the vibration mode shape. Thus, many experiments were designed to assess the effects of these different variables on flow rate and to find the optimal set of device parameters that maximizes the flow rate. However, it can be very expensive to perform such physical experimentation with physical prototypes, which needs different orifice geometries to be fabricated for different test regimes. The orifice sizes are microscopic with diameters typically between 3 µm and 5 µm, thus, they are difficult to be fabricated with the exact shape and diameter that are required. Therefore, virtual prototyping by means of numerical simulation models are required as the orifice geometries and other factors can be easily changed in the simulation models. This study aims to provide a numerical simulation model that is experimentally validated. By comparing the simulated flow rates with the experimentally obtained flow rates, and the simulated droplet diameters with the experimentally obtained droplet diameters, it was found that the errors are all less than 10 % which demonstrates this numerical simulation model is adequately validated by experiment. Thus, instead of carrying out expensive experiments, this simulation model can be used for predicting the volumetric flow rates for different prescribed orifice geometries. Furthermore, this paper also simulates the effects of viscosity and surface tension on the flow rate, where either viscosity or surface tension increases, the flow rate will decrease.

Experimental and theoretical investigations of the threshold actuation voltages of aqueous solutions, glycerol–water solutions, and ethanol–water solutions on a coplanar electrode device

In digital microfluidics, actuation voltage is critical in droplet manipulation using electrowetting-on-dielectric. Compared to parallel electrode devices, the droplet manipulation on coplanar electrodes requires a higher actuation voltage due to its structure. This study derives an equation related to the threshold actuation voltage and many critical parameters (applied frequency, surface tension, fluid conductivity, droplet volume, dielectric thickness, etc.). Our developed model has three innovations: (1) liquid and device parameters related to the threshold actuation voltage are integrated into the model, (2) the absolute value of the complex permittivity of the fluid is added into our model to clarify the conductivity-dependent and frequency-dependent threshold actuation voltage, and (3) the extrand model is used to derive the effects of the surface tension, contact angles, and droplet radius on the threshold actuation voltage. Additionally, we used many solutions for biochemical and biomedical assays—DI (Deionized) water, DMEM (Dulbecco's Modified Eagle Medium), PBS (phosphate buffered saline), glycerol–water solutions, ethanol–water solutions, potassium chloride solutions, and sodium chloride solutions—to verify the developed Vth in our model. By using the model and conducting an experiment, we investigated the Vth of different liquids on coplanar electrodes. Our model can successfully explain the difference of Vth between these solutions on coplanar electrode devices. The model and experimental data can be utilized to predict the actuation voltage for a broad range of buffers and organic solvents on coplanar electrodes.

Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

Extracting Device Parameters of TFTs With Ultrathin Channels at Low Temperatures by Particle Swarm Optimization

Compact modeling of short-channel effects in back-gated 2D negative capacitance (NC) FETs

The negative capacitance field-effect transistor with 2D channel material (2D NC-FET) holds significant promise for low-power applications owing to its remarkable resilience against short-channel effects (SCEs) and favorable noise characteristics. In this study, we establish a compact current–voltage (I–V) model for short-channel back-gated 2D NC-FETs with metal-ferroelectric-metal–insulator–semiconductor structure by self-consistently solving the two-dimensional Poisson, drift–diffusion and Landau–Khalatnikov equations. The proposed model is valid and continuous throughout the entire operating regime, including the fully-depleted region, partly-depleted region, and accumulation region. Furthermore, we derive analytical equations for the threshold voltage ( VTH ) and subthreshold swing ( SS ) of back-gated 2D NC-FETs based on the developed I–V model. Lastly, we elucidate the influence mechanisms of various device parameters and voltage bias on the subthreshold characteristics of short-channel back-gated 2D NC-FETs using the proposed I–V model in conjunction with analytical expressions of VTH and SS . Our findings reveal that back-gated 2D NC-FETs shows unconventional degradation behavior in VTH and SS, resulting from the competition between traditional SCEs and novel negative capacitance effects.

Improving the transfer of dissolved oxygen in a biological Fe2+ oxidation process using a venturi jet as an intensive aeration system

The low bio-production of Fe3+ as a leaching agent is one of the main limitations to implementing industrial bio-processes at feasibility conditions. The main limitation of the bio-oxidation process of Fe2+ is the low oxygen transfer to the aqueous phase because of the low oxygen solubility. This study assesses the effectiveness of the venturi jet as an innovative and intensive aeration device for overcoming the oxygen limitation in a continuous ferrous oxidation process in a fixed-bed reactor with immobilized acidithiobacillus ferrooxidans, in contrast to the conventional diffuser aeration device. Firstly, the influence of the airflow and the influence of the medium concentration were determined for the following parameters for both aeration devices; Volumetric mass transfer coefficient (kLa), Standard Oxygen Transfer Rate (SOTR), Standard Aeration Efficiency (SAE), and Standard Oxygen Transfer Efficiency (SOTE). Then, both aeration devices were compared in a continuous bio-oxidation process in an up-flow packed bio-reactor (UFPB). The system performance was assessed by monitoring temperature, pH, oxidation-reduction potential, and dissolved oxygen concentration for 69 days. Findings displayed that when aerating with the diffuser, the ferrous oxidation rate was restricted by the low dissolved oxygen availability, being about 1 ppm (1 mg L−1). Under these oxygen-limiting conditions, the maximum ferrous (Fe2+) oxidation rate was 9.09 g L−1 h−1. However, when aerating with the venturi jet, the dissolved oxygen concentration increased up to 2.70 mg L−1, achieving a maximum of 29.11 g L−1 h−1. So, this study has demonstrated that the change in the aeration device has resulted in an improvement in the process, achieving a 3.5-fold increase in the oxidation rate. Furthermore, the venturi jet offered additional advantages over the diffuser, such as requiring less power to deliver the same amount of air, being unaffected by jarosite precipitates, and not requiring a supply of compressed air.

Experimental investigation of the effective parameters on the lead extrusion damper performance

Lead extrusion dampers (LED) are employed for seismic response control of various structures due to their advantages over other energy-dissipative devices. However, a reliable design algorithm and an optimization process are essential to ensure optimal performance within the host structural system. Thus, the influence of device parameters on the damper behavior must be clearly understood. In the first part of this comprehensive study, the effect of different parameters on the LED performance was experimentally investigated. To this end, 23 specimens with different prestressing levels, bulge-to-shaft diameter ratios, shaft-to-bulge transition zone geometries, and device length ratios were cyclically tested under varying displacement amplitudes, i.e., 5 mm, 10 mm, and 20 mm, and loading rates, 0.5 mm/s, 1.0 mm/s, and 2.0 mm/s. Subsequently, they were exposed to a ramp-type loading up to the amplified design displacement. After satisfactorily completing the experimental tests, the behavior of the LEDs was compared in terms of their hysteretic behavior, energy dissipation capacities, temperature change, and stable behavior. It was concluded that the most influential parameters on the LED behavior were the bulge-to-shaft diameter ratio and the prestressing level on the lead. In addition to its effects on improving the hysteretic behavior, having a smooth shaft-to-bulge transition zone geometry was essential to guarantee a stable damper behavior.

Substitution of an isovalent Te-ion in SnSe thin films for tuning optoelectrical properties

In present work, SnSe1-xTex thin films with varying Te concentrations were deposited on glass substrate through thermal evaporation technique. SnSe1-xTex thin films were characterized using X-ray diffraction (XRD), atomic force microcopy (AFM), X-ray photoelectron spectroscopy (XPS), UV–Vis NIR spectroscopy and room-temperature hall measurements technique. XRD patterns revealed that all the samples had a polycrystalline orthorhombic structure. Additionally, a low level of Te impurity improved the crystalline quality of the SnSe thin films. AFM images showed a noticeable alteration in the surface structure of the SnSe thin films caused by Te doping. UV–Vis NIR spectroscopy was employed to assess the optical characteristics of SnSe1-xTex thin films, revealing a variation in the optical band gap energy (Eg) between 1.75 and 1.89 eV, attributed to Te doping. The Hall effect measurement revealed n-type conductivity, and the carrier concentration decreased as the Te dopant concentration increased, corresponding to a decrease in antisite SnSe defects. The experimental findings suggest that adding a moderate amount of Te is a beneficial method for enhancing the optical and electrical properties of SnSe films. Furthermore, the Schottky device parameters of the Ag/SnSe1-xTex/Al:ZnO structure were established by analyzing the temperature-dependent Current-Voltage (I–V-T) characteristics through the thermionic emission current transport mechanism.

Design and field experiment of Codonopsis pilosula film covering transplanter

To address the low efficiency and high labor demands of manual Codonopsis pilosula cultivation, as well as the limitations of existing flat-type transplanting machines that create trenches of inconsistent depth hindering root growth and seedling emergence, a C. pilosula film-covered outcrop tilted transplanting machine was developed. Based on theoretical analysis of the prototype's key components and agronomic requirements for oblique C. pilosula transplanting, the structure and working parameters of the rotary tiller soil throwing device, soil lifting device, track-type soil conveying device, seedling throwing device, and film covering device were determined. The core components' working principles were analyzed, and the soil throwing process of the rotary tiller device was simulated using the discrete element method (DEM). A calculation domain was established, and the results showed that the average mass of the rotary tiller device was 49.44 kg, while the required soil lifting amount for the scraper-type soil lifting device was 21.84 kg, meeting the soil throwing requirements. Field experiments in 10 test areas demonstrated an average qualified rate of 89.50% for planting depth, 84.00% for planting posture, 90% for exposed plant spacing, 4.51 cm for plant spacing, and 8.67% coefficient of variation for planting spacing. These results meet industry standards for planting depth and planting spacing, confirming the machine's effectiveness in achieving high-quality tilted transplanting of C. pilosula seedlings.

A comprehensive study on electron and hole transport layers for designing and optimizing the efficiency of MoSe2-Based solar cells using numerical simulation techniques

Researchers have recently shown a great deal of interest in molybdenum diselenide (MoSe2)-based solar cells due to their outstanding semiconducting characteristics. However, discrepancies in the band arrangement at the MoSe2/ETL (electron transport layer) and hole transport layer (HTL)/MoSe2 interfaces impede performances. In this research, a device combination with Ag/FTO/ETL/MoSe2/HTL/Ni is employed, where 7 HTLs and 3 different ETLs have been utilized to explore which device arrangement is superior. To achieve the most effective device arrangement, the effects of various device variables, such as thickness, donor density, acceptor density, defect density, temperature, series, and shunt resistance, are optimized. The computational evaluation under AM 1.5 light spectrums (100 mW/cm2) is performed using the SCAPS-1D simulator. When the several device parameters were optimized, the device that was correlated with Ag/FTO/SnS2/MoSe2/V2O5/Ni revealed the highest overall performances among the three different ETL (In2S3, SnS2, ZnSe)-based devices, with measuring a PCE of 34.07 %, a VOC of 0.918 V, a JSC of 42.565 mAcm−2, and an FF of 87.19 %. This recommended MoSe2-based solar cell exhibits outstanding efficiency in terms of maintenance and comparison to numerical thin film solar cells, highlighting MoSe2 as an attractive option for solar energy systems while eliminating toxicity challenges.

Harmonic voltage measurement based on capacitive equipment dielectric equivalent model and responding current

Abstract With the increasing proportion of new energy and the power electronic equipment in the power grid, accurate measurement of harmonic voltage has become increasingly important for power quality monitoring. In order to solve the problem of high-precision measurement of harmonic voltage in the power grid, this manuscript proposes a high-precision harmonic voltage measurement method based on the dielectric equivalent model (DEM) of capacitive equipment and its responding current. Based on DEM, a voltage-current transfer function of the capacitive device is established, and harmonic voltage is reconstructed with the responding current. Considering the dielectric relaxation characteristics of capacitive device other than a pure capacitor model, this manuscript analyzes the fitting performance of different equivalent capacitance models and improves the traditional pure capacitance model to a more suitable DEM for harmonic voltage reconstruction. The DEM parameters of capacitive devices are obtained through the frequency domain spectroscopy (FDS) and intelligent parameter identification algorithms, which improved the measurement accuracy of harmonic voltage and reduced computational complexity. The harmonic voltage testing platform is established to test the simulated high-voltage harmonics and the harmonic voltage of the actual grid voltage. The results show that the proposed harmonic voltage measurement method can meet the high-precision reconstruction of harmonic voltage in the frequency range of 50~2500Hz, and the system testing error with sensors is less than 2%. The testing accuracy is higher than traditional voltage transformers and testing systems based on pure capacitance models.

Simulation study of a highly sensitive I-shaped Plasmonic nanosensor for sensing of biomolecules

This paper presents the design and simulation of an I-shaped metal insulator metal waveguide-based nanosensor for biosensing applications. The device’s sensing property is investigated using the three-dimensional finite element method. In the proposed design a I-shaped cavity is coupled to the main waveguide that serves as a resonator to generate the resonance peaks. The refractive index of the material to be sensed is filled inside the I-shaped cavity. This sensor operates in the near and mid-infrared wavelength ranges. The device can identify a variety of biomolecules, including cancer cells and bacterial samples. The simulation results reveal that device shows different resonance dips for different refractive indexes of cancer cells. The device can obtain sensitivity of 1550 nm RIU−1 and 1250 nm RIU−1 among refractive index of normal and cancerous cell for basal and hella cancer cells, respectively. Instead of all these biomolecules, the nanosensor shows different resonance dips in the transmittance spectrum for DNA, RNA, and ribonucleoprotein. Furthermore, the sensor has demonstrated potential applicability as an HB concentration detector and for sensing other blood components. Moreover, we improved the structure characteristics by varying the length and centre area of the cavity, demonstrating that modifying the device parameters can boost sensitivity. After making structural adjustments to the device, the maximum sensitivity of 3000 nm RIU−1 is achieved for some bacterial samples.

Ambipolar current suppression in drain elevated TFET using a novel extended drain structure with a moderate doping profile

In this paper, a simple and compact silicon-based Elevated and Extended Drain with Hetero-Dielectric Gate Oxide TFET (EED HDGO TFET) is proposed to suppress the ambipolar current in Elevated Drain TFET (ED TFET). The proposed device structure uses a moderately doped drain with a doping concentration of ∼1018 cm−3 and a high drain length of ∼50–100 nm. The combination of the moderate drain doping profile and the extended drain length reduced the impact of the electrostatic potential from the positive voltage of the drain electrode on the channel–drain junction. This structural technique widens the tunneling width at the channel–drain region causing the tunneling current to decrease significantly. The tunneling width is further increased by structurally isolating the channel–drain junction region from the gate electrode. Thus, distancing the channel–drain junction from both the gate electric field and the static drain potential of the drain electrode causes full suppression of the ambipolar (Iamb) current. The proposed structure yields Iamb and Ioff as low as ∼10−18 A/μm and ∼10−17 A/μm respectively, while maintaining the Ion as ∼0.3 mA. The device is optimized for low power and high-speed digital circuits through intensive parametric analysis on gate–drain Cgd and the gate–source Cgs capacitances for various device parameters.

Unveiling the potential of Ag2S-based full-inorganic flexible thermoelectric devices for temperature sensors

Thermoelectric sensors, which are capable to convert temperature gradients into electrical signals, hold promise for use in wearable body-temperature monitors and self-powered electronic devices. However, traditional flexible thermoelectric devices constructed with organic materials have been hampered by their low energy conversion efficiency, largely stemming from the lack of ideal materials and optimized device geometry. In this study, we utilize state-of-the-art Ag2S-based inorganic materials and fine-tune the geometric parameters of full-inorganic flexible thermoelectric devices through finite element simulation. Our research reveal that these geometric parameters significantly impact the output performance of the flexible thermoelectric device. With the temperature difference set up as 25 K, the optimized device demonstrates a notable performance enhancement, particularly in terms of power density, which is 84 % higher compared to the pre-optimization state. This work introduces a novel approach for enhancing the performance of full-inorganic flexible thermoelectric devices, and also delves into the potential application of this technology in the realm of respiratory monitoring, underscoring its significance and promising prospects.

Hydrophilic phycocyanin encapsulation in PLGA nanoparticles using benchtop microfluidic device

Phycocyanin (PC), a sensitive hydrophilic protein with significant biological functions, is prone to denaturation in harsh environmental conditions. Here, we employ a microfluidic-assisted nanoprecipitation approach using poly lactic-co-glycolic acid (PLGA) as a protective coating material to shield PC from such conditions. Despite the complexity of microfluidic device preparation and the challenge of encapsulating water-like protein with high association efficiency, our study demonstrates the successful generation of nanosized PC-loaded particles using a 1-mm-width microfluidic device. Optimal device parameters, including a 90˚ intersecting angle, a 3-cm-length outlet channel, and a total flow rate of 396 µLmin−1, yielded particles approximately 200 nm in size with an association efficiency (AE) of around 80 %. Notably, DMSO proved to be an effective organic solvent for preserving PC. Interestingly, surfactants typically employed for stability and biocompatibility in microfluidic techniques, were found to be unnecessary in this system, potentially altering the secondary structure of PC, as indicated by circular dichroism (CD) spectra. Overall, this research confirms the feasibility of producing nanosized particles with monodisperse spherical morphology using a benchtop microfluidic device. Moreover, the enhanced association efficiency of hydrophilic protein in PLGA holds significant promise for encapsulating non-hydrophobic proteins.

Multi-functional switchable terahertz metasurface device prediction by K-nearest neighbor

In this paper, we present the design of a versatile terahertz (THz) device characterized by its multi-functional capabilities including broadband absorption and polarization modulation, achieved through leveraging the temperature-induced phase transition behavior of vanadium dioxide (VO2). Operating in the metallic state of VO2, the device exhibits broadband absorption properties, delivering a remarkable total effective absorption of 2.871 THz with absorption rates exceeding 90 % across the frequency ranges of 8.140∼9.405 THz and 12.740∼14.346 THz. Furthermore, it demonstrates excellent adaptability to large angle incidence. Conversely, in the dielectric state of VO2, the device transitions into a polarization modulation mode, facilitating linear-to-cross-polarization (LTX) and linear-to-circular-polarization (LTC) conversions. Notably, for LTX polarization, the conversion efficiency exceeds 90 % within the 8-11.5 THz range, while for LTC polarization, the ellipticity surpasses 0.8 within the 7.861∼8 THz range. Additionally, we introduce a machine learning (ML) approach to optimize the device parameters, presenting a novel strategy for enhancing the design and optimization of future multifunctional devices.

Flexible thin-film thermoelectric generators for human skin-heat harvesting: A numerical study

By harvesting thermal energy from human skin, self-powered wearable electronics have the potential to overcome the limitations of battery power, enabling long-term continuous operation. Flexible thermoelectric generators (TEGs) that can form a conformal contact with heat sources of any shape are critical for self-powered wearables. Nevertheless, practical implementations and efficient harvesting of heat energy from the human body are still hindered by factors that significantly diminish the power output of flexible TEGs. In this work, we present a design framework and computational platform optimized for modelling the harvesting of skin-heat energy using organic-based flexible thin-film TEGs. First, a three-dimensional numerical model based on the finite element method (FEM) has been developed, which enables the study and optimization of organic-based film thermoelectric (TE) device and TEG parameters, such as width, length, thickness, and interconnection dimensions, to maximize performance. Then, the optimized flexible TEG has been used to investigate the effect of human skin on wearable device applications in different parts of the body and environmental conditions. Mechanical interlayers designed to control various interface functions can alter junction resistances, leading to structures that are either highly conductive or insulating. Soft heat conductor (SHC) and soft heat insulator (SHI) layers are embedded to enhance the thermal interfaces and temperature difference across the TEG. As a result, embedding these soft heat layers can increase the temperature difference (ΔT) and open circuit voltage (VOC) along the TEG by ∼30 % over conventional flexible thin-film TEGs, while preserving mechanical softness and flexibility. Additionally, a study on the impact of the skin/TEG matching and heat flux at the skin/TEG interface is presented. Lastly, using a state-of-the-art post-treated poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) film-based TEG device model, we determined the maximum power output obtainable on various parts of the human body under three distinct environmental conditions (cold, room, and hot temperatures).

The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process

The resistive RAM (RRAM) based in-memory computation is a promising technology to overcome the Von-Neumann bottleneck to provide fast and efficient computation. The RRAM is the most appropriate choice for cryptographic applications like encryption/decryption in which the data is computed and stored in the memory itself which enhances the security. The variability issue of RRAM namely switching or device parameter variations and cycle-to-cycle variations deteriorates the functionality of RRAM based circuits. In this paper, the XOR gate with V/R-R logic and a 4-bit encryption/decryption process are implemented using the RRAM Stanford model integrated in the Cadence circuit simulator. The output voltage variations of XOR gate and the encryption/decryption by varying switching and cycle-to-cycle parameters are analyzed. The range of switching parameters of the model that provides the accurate outputs of XOR gate and encryption/decryption is determined.

Improved assembly DC circuit breaker based on resonant current injection.

DC circuit breakers (DCCBs) with high breaking capacity and low cost are necessary for quick fault clearance in DC networks. The assembly DC circuit breakers (ADCCBs) have a main breaking section (MBS) and a sub-breaking sections (SBS) for each line, which greatly reduce the cost. But in conventional operation, it bears high voltage for a long time when there is a main switch grounding process in any line fault action. To address this problem, a multiport assembly circuit breaker based on current injection (CI-MPACB) is proposed, which is able to generate a resonant current with increasing amplitude by controlling the duty cycle of Integrated Gate-Commutated Thyristors (IGCTs). Then the resonant current is injected into the SBS to generate current zero crossing and arc extinction. A complex frequency domain circuit analysis is performed on the MBS to describe the action logic as well as the commutation characteristics. In addition, the parameters of each component of the MBS are subject to multiple constraints and reasonable design to ensure the fault current could be cut off quickly and reliably. The cost of existing design is greatly reduced due to the design idea of resonant current injection device parameter selection. Finally, a PSCAD/EMTDC simulation confirms the opening viability of CI-MPACB and the accuracy of the parameter design. The test results show that the designed CI-MPACB can cut off DC fault lines.

Distributed Bragg reflector based ASE noise removal pump wavelength filters for futuristic chip-scale quantum photonic circuits.

This article reports a novel design of a compact tunable resonance filter with a highly extinguished and ultra-broad out-of-band rejection for on-chip amplified spontaneous noise suppression from pump lasers highly demanding for generating pure/entangled photon pairs via χ(3) process in a CMOS compatible silicon photonics technology platform. The proposed device is designed with two identically apodized distributed grating structures for guided Fabry-Perot resonant transmissions in a silicon-on-insulator rib waveguide structure. The device design parameters are optimized by theoretical simulation for a low insertion loss singly-resonant transmission peak at a desired wavelength. We observed that a device length of as low as ∼ 35 µm exhibits a rejection band as large as ∼ 60 nm with an extinction of ∼ 40 dB with respect to the resonant wavelength peak at λr ∼ 1550 nm (FWHM ∼ 80 pm, IL ∼ 2 dB). The experimental results have been shown to be closely matching to our theoretical simulation and modeling results in terms of its stop bandwidth and resonance wavelength for noise suppressed pump laser wavelength filtering. As expected from the theoretical prediction, the trend pertaining to the trade-off between passive insertion loss and Q-value of the resonances has been observed depending on the device parameters. The thermo-optic tuning characteristics of resonant wavelengths have been obtained by integrating microheaters. The resonance peak could be tuned at a rate of 96 pm per mW of consumed thermal power. Noise associated with an amplified pump wavelength (λP ∼ 1550 nm) has been shown to be suppressed (∼ 40-dB), up to the detector noise floor.

Analyzing false turn-on events with varying gate drive parameters in high voltage GaN devices

In this paper, we address the problem of false turn-on effects in a half-bridge GaN power converter in terms of circuit and device parameters. The model shows that the inherent false turn-on problem is caused by slew rates dvdsdt and dvgsdtduring the switching transients occurring at the turn-on and off phases. A higher slew rate propagates the gate driver voltage to overshoot beyond the threshold voltage causing it to accidentally turn on This study shows that dvdsdt is dependent on the internal device parameters such as gfs (transconductance) and Coss(output capacitance). From the CV characteristics, it is pretty much evident that the internal capacitances Cossand Crss (reverse transfer capacitance) are reduced with higher drain voltage enabling higher slew rates which increases the probability of false turn-on problems. Experimental results at numerous operating points at 400 V with the variation in different gate drive parameters support the analysis.