Detection Of Terahertz Radiation Research Articles

Cherenkov-phase-matched nonlinear optical detection and generation of terahertz radiation via GaAs with metal-coating.

Terahertz (THz) wave detection and emission via Cherenkov-phase-matched nonlinear optical effects at 1.55-μm optical wavelength were demonstrated using a GaAs with metal-coating (M-G-M) and bare GaAs as a reference sample in conjunction with a metallic tapered parallel-plate waveguide (TPPWG). The metal-coated GaAs is superior to the bare wafer both as a THz electro-optic detector and as an emitter. Significant improvements in the detection and emission efficiency were obtained by utilizing a metal-coating due to better confinement and lower loss of the THz waves propagating in the M-G-M compared with bare GaAs.

Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation

We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of the photoresponse signal was observed around the threshold voltage. Results from numerical simulations based on synopsys TCAD are in agreement with experimental ones. The NEP and Responsivity were calculated from the photoreponse signal obtained experimentally. Those values are competitive with the commercial ones. A maximum of photoresponse was obtained (for all devices) when the polarization of the incident terahertz radiations was in parallel with the fingers of the gate pads. For applications, the device was used as a sensor within a terahertz imaging system and its ability for inspection of hidden objects was demonstrated.

Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation

Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.

Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection

We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.

Mid-infrared-pumped quantum cascade structure for high-sensitive terahertz detection.

Based on multiple quantum wells, we design a pumping-detection quantum cascade structure for the detection of terahertz (THz) radiation. In the structure, carriers are first pumped by a mid-infrared (MIR) laser to an excited state, to get enough energy space for the following fast longitudinal optical (LO) phonon extraction. Within the LO-phonon extraction stair, an absorption well is designed for THz detection. Due to the establishment of LO-phonon stair extractor, carriers transport between quantum wells in picosecond range and a high responsivity for THz absorption can be obtained. We also find that doping in both MIR active well and extractor region is significant for high-speed response of the THz detection. Our design is expected to extend the high-sensitive detection of a quantum cascade photodetector from middle wave of MIR to THz region.

Detection of terahertz radiation by resonant tunneling nanoheterostructures

The phenomenon of terahertz radiation detection by resonant tunneling structures (RTSs) has been studied. The calculations of the changes ΔI0 in the direct current (DC) component I0 under the action of an alternating electric field were carried out by the solution of a nonstationary Schrodinger equation with a time-periodic electric field based on the Floquet mode expansion of the wave functions. The dependences of the DC component I0 in resonant tunneling structures on the frequency ν and AC signal amplitude Vac have been built. It is shown that the ΔI0 value in triple-barrier RTSs at resonance frequency hv ≈ Er2–Er1 (Er1 and Er2 are the energies of the size-quantized levels) can exceed a low-frequency value by more than an order of magnitude. The parameters of the structures have been optmized, in order to use them in the terahertz radiation detectors in the anbsence of an external bias. The possibility of tuning the resonance frequency in the terahertz range by changing the DC bias has been shown.

Detection of Coherent Terahertz Radiation from a High-Temperature Superconductor Josephson Junction by a Semiconductor Quantum-Dot Detector

We examine the application of Josephson radiation emitters to spectral calibration of single-photon-resolving detectors. Josephson junctions are patterned in a YBCO film on a bicrystal sapphire substrate and are voltage controlled to generate radiation in the frequency range of 0.05-1 THz. The detector used in this work consists of a gate-defined quantum-dot photon-to-charge transducer coupled to a single-electron transistor. Both the emitter and the detector are equipped with a matching on-chip wide-band antenna. The combination of a tuneable emitter and detector allows us to determine the efficacy of the YBCO emitter and also to analyze the elementary processes involved in the detection.

YBa2Cu3O7-x bicrystal Josephson junctions with high IcRn-products and wide-ranging resistances for THz applications

Josephson junctions with high characteristic voltages $I_{c}R_{n}$ and resistances $R_{n}$ ranging from subohm values to several hundred ohms are required for various terahertz (THz) applications. Due to optimization of technology, [100]-tilt YBa2Cu3O7-x bicrystal Josephson junctions with an average $I_{c}R_{n}$ (5 K) value of 7 mV at an $R_{n}$ -range from 0.4 to 400 $\Omega$ have been fabricated on (320) bicrystal NdGaO3 substrates. Classical and frequency-selective detection of THz radiation have been demonstrated with the fabricated Josephson junctions. The main characteristics of Josephson oscillators, spectrum analyzers, admittance spectrometers, and classical detectors have been evaluated within this range of junction parameters, and promising results have been obtained.

Mercury–cadmium–telluride thin layers as subterahertz and infrared detectors

Issues associated with the development and exploitation of infrared (IR) and terahertz (THz) radiation detectors based on a narrow-gap HgCdTe semiconductor have been discussed. This mercury-cadmium-tel- luride (MCT) semiconductor can be applied for two-color detector operation in IR and sub-THz spectral ranges. Two-color uncooled and cooled down to 78 K narrow-gap MCT semiconductor thin layers grown using the liquid phase epitaxy or molecular beam epitaxy methods on high-resistive CdZnTe or GaAs substrates, with bow- type antennas, have been considered both as sub-THz direct detection bolometers and 3 to 10 μm IR photo- conductors. Their room temperature noise equivalent power at the frequency ν ≈ 140 GHz and signal-to-noise ratio at the spectral sensitivity maximum under monochromatic (spectral resolution ∼0.1 μm) globar illumination reached the following values; ∼4.5 × 10 −10 W∕Hz 1∕2 and ∼50, respectively. Aspheric lenses used for obtaining the images in the sub-THz spectral region were designed and manufactured. With these detectors, about 140 and 270 GHz imaging data have been demonstrated. © 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) (DOI: 10 .1117/1.OE.54.12.127102)

Photoconductive Terahertz Near-Field Detector with a Hybrid Nanoantenna Array Cavity

Nanoscale structuring of optical materials leads to modification of their properties and can be used for improving efficiencies of photonic devices and for enabling new functionalities. In ultrafast optoelectronic switches for generation and detection of terahertz (THz) radiation, incorporation of nanostructures allows us to overcome inherent limitations of photoconductive materials. We propose and demonstrate a nanostructured photoconductive THz detector for sampling highly localized THz fields, down to the level of λ/150. The nanostructure that consists of an array of optical nanoantennas and a distributed Bragg reflector forms a hybrid cavity, which traps optical gate pulses within the photoconductive layer. The effect of photon trapping is observed as enhanced absorption at a designed wavelength. This optically thin photoconductive THz detector allows us to detect highly confined evanescent THz fields coupled through a deeply subwavelength aperture as small as 2 μm (λ/150 at 1 THz). By monolithically ...

Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling electron injection from the emitter, electron propagation across the barrier layers with the partial capture into the GB, and the self-consistent oscillations of the electric potential and the hole density in the GB (plasma oscillations), as well as the quantum capacitance and the electron transit-time effects. Using the proposed device model, we calculate the responsivity of GB-HETs operating as THz detectors as a function of the signal frequency, applied bias voltages, and the structural parameters. The inclusion of the plasmonic effect leads to the possibility of the GB-HET operation at the frequencies significantly exceeding those limited by the characteristic RC-time. It is found that the responsivity of GB-HETs with a sufficiently perfect GB exhibits sharp resonant maxima in the THz range of frequencies associated with the excitation of plasma oscillations. The positions of these maxima are controlled by the applied bias voltages. The GB-HETs can compete with and even surpass other plasmonic THz detectors.

Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.

On the natural magnetization of ideal quantum dots and the possibility of detection of terahertz radiation in the magnetic field

A wave function is constructed and the binding energy of electron localized at an ideal quantum dot in the external magnetic field is calculated. It is shown that the energy of the Zeeman splitting in moderate magnetic fields corresponds to photons from the terahertz band, i.e., processes with the electron spin flip lead to radiation or absorption of terahertz radiation. It is established that external terahertz radiation changes the spin equilibrium distribution and, as a result, the magnetization of the system, thus creating the possibility of detection of this radiation by measuring the magnetization of the system of quantum dots.

Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide

We report on room temperature detection of terahertz radiation by means of antenna-coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon carbide. The achieved photoresponsivity (∼0.25 V/W) and noise equivalent power (∼80 nW/Hz) result from the combined effect of two independent detection mechanisms: over-damped plasma wave rectification and thermoelectric effects, the latter ascribed to the presence of carrier density junctions along the FET channel. The calculated plasmonic and thermoelectric response reproduces qualitatively well the measured photovoltages; the experimentally observed sign-switch demonstrates the stronger contribution of plasmonic detection compared to the thermoelectric one. These results unveil the potential of plasmonic detectors exploiting epitaxial graphene on silicon carbide for fast large area imaging of macroscopic samples.

Silicon junctionless field effect transistors as room temperature terahertz detectors

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.

Nonlinear theory of the narrow-band generation and detection of terahertz radiation in resonant tunneling heterostructures

The nonlinear regime of high-frequency response for resonant tunneling structures in a time-periodic electric field has been investigated using a technique for solving the time-dependent Schrodinger equation based on a Floquet mode expansion of the wave functions. The dependences of current harmonic amplitudes on ac signal amplitude have been calculated and the limiting values of the generated field have been determined for singleand double-well resonant tunneling structures. The dynamic Stark effect is shown to play an important role in the formation of response. It leads to a quadratic (in ac field amplitude) shift in the positions of resonances Er in single-well structures and in double-well ones in the nonresonant case and to a splitting at resonance hν ≈ Er2–Er1 (ν is the signal frequency, Er1 and Er2 are the energies of the size-quantization levels) in double-well structures proportional to the ac signal amplitude. The phenomenon of ac signal detection by resonant tunneling structures has been investigated. The effect of resonant direct-current amplification in double-well structures has been detected at a signal frequency satisfying the condition hν ≈ Er2–Er1. In asymmetric systems, detection is shown to be possible in the absence of a dc bias, which allows zero-biased detectors based on them to be created.

Optimizing detection methods for terahertz bioimaging applications

We propose a new approach for efficient detection of terahertz (THz) radiation in biomedical imaging applications. A double-layered absorber consisting of a 32-nm-thick aluminum (Al) metallic layer, located on a glass medium ( SiO 2 ) of 1 mm thickness, was fabricated and used to design a fine-tuned absorber through a theoretical and finite element modeling process. The results indicate that the proposed low-cost, double-layered absorber can be tuned based on the metal layer sheet resistance and the thickness of various glass media. This can be done in a way that takes advantage of the diversity of the absorption of the metal films in the desired THz domain (6 to 10 THz). It was found that the composite absorber could absorb up to 86% (a percentage exceeding the 50%, previously shown to be the highest achievable when using single thin metal layer) and reflect of the incident THz power. This approach will enable monitoring of the transmission coefficient (THz transmission fingerprint) of the biosample with high accuracy, while also making the proposed double-layered absorber a good candidate for a microbolometer pixel’s active element.

Drift transport model of field effect transistors in saturation beyond cutoff

Field effect transistors (FETs) can be used for Terahertz radiation detection beyond cutoff frequencies. Their operation in the linear regime of operation has been sufficiently modeled and analyzed. Unfortunately, this is not the case for FETs operating in the saturation regime. This work expands the (semi-classical) drift current transport theory in FETs beyond the cutoff frequency to present a piece-wise model of nonlinear high frequency rectification in the saturation regime. The saturation regime is divided into three subregimes, each of them has a distinct rectification response function. The transition between them may induce a peaking effect in the overall response function.

Terahertz magneto-spectroscopy of a point contact based on CdTe/CdMgTe quantum well

To understand a terahertz (THz) response of a point contact device, a number of samples based on CdTe/CdMgTe quantum wells grown by a molecular beam epitaxy were investigated at low temperatures and high magnetic fields. The experiments involved magneto-transport, photocurrent, and transmission measurements carried out with monochromatic THz sources or a Fourier spectrometer. Samples of different geometry with and without gate metallization were used. We observed excitations of a two-dimensional electron plasma in the form of optically induced Shubnikov-de Haas oscillations, cyclotron resonance transitions, and magneto-plasmon resonances. A polaron effect was observed at magnetic fields higher than 10 T. A point contact device processed with an electron beam lithography was investigated as a detector of THz radiation. It was shown that the main mechanism responsible for a THz performance of the point contact was excitation of magneto-plasmons with a wavevector defined by geometrical constrictions of the device mesa.