Abstract
Field effect transistors (FETs) can be used for Terahertz radiation detection beyond cutoff frequencies. Their operation in the linear regime of operation has been sufficiently modeled and analyzed. Unfortunately, this is not the case for FETs operating in the saturation regime. This work expands the (semi-classical) drift current transport theory in FETs beyond the cutoff frequency to present a piece-wise model of nonlinear high frequency rectification in the saturation regime. The saturation regime is divided into three subregimes, each of them has a distinct rectification response function. The transition between them may induce a peaking effect in the overall response function.
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