In this study, ITO and Pt layers were deposited on (100) Si substrate respectively as bottom electrode for ZnO-based resistive memory. The ITO layer was textured and its preferred orientation is highly dependent on the oxygen partial pressure of growth atmosphere. As the oxygen content increases in the range of 0%–15%, the preferential growth orientation tends to change from (400) to (222). (002)-textured ZnO thin films with different preferred orientation degree sputtered on Pt and two kinds of oriented ITO layers were comparatively investigated. The device with (400)-ITO bottom electrode was found to have the best resistive switching performance. Meanwhile, the differences in switching behaviors were also found to be closely related to the thickness-dependent crystalline structure and top contact electrode/interface. This study provides an in-depth understanding of the structural design and structure-activity relationship of high-performance ZnO-based resistive memory.