Enhancement-mode Research Articles

Reversible Carrier Concentration Control on Ultra-Thin in2O3 By Viologen Molecules Charge Transfer Method

Ultra-thin Oxide semiconductor fabricated by atomic layer deposition (ALD) is one of the promising candidates, due to their ultra-thin thickness and being highly compatible with the silicon process.[1] However, further tuning the oxide semiconductor's carrier concentration is still an interesting issue. Although annealing is a widely used way, the increase in thermal budget is unwilling to be met. To adjust the carrier concentration without increasing the thermal budget, viologen molecule, a strongly n-type dopant which have been successfully applied to different material systems including 2D,[2] CNT,[3] ultra-thin Ⅲ-Ⅴ,[4] has been used in the In2O3 transistor(as shown in Figure 1a). After viologen treatment, the viologen dopants increased the carrier concentration and caused a difference of n 2D, which is 2 × 1012 cm-2 of 2 nm thickness in In2O3, without degrading the mobility under the same overdrive voltage. The In2O3 transistor achieves an electron sheet density of 6.8 × 1012 cm−2. To further expand the function, viologen dopants are modified by hydroxy group. With hydroxy group modifying, the viologen dopants can be removed by acetone and be re-treated back on the In2O3 again. The reversible cycle of viologen treatment can be repeated multiple times without harming the In2O3 device (as shown in Figure 1b). Precise control of the threshold voltage allows for fine-tuning of the transistor between depletion mode and enhancement mode. Based on this, a depletion load inverter has been demonstrated. This result shows that the viologen dopants and In2O3 have the potential to be further integrated with other low dimensional materials in BEOL without raising the thermal budget while tuning the carrier concentrations. Figure 1. a) Schematic representation of the structure of a In2O3 bottom-gate transistor and the viologen charge transfer process. b) The transfer characteristics of In2O3 transistors repeatedly treated and removed of OHV for four cycles. References (1) Si, M.; Lin, Z.; Chen, Z.; Sun, X.; Wang, H.; Ye, P. D. Scaled Indium Oxide Transistors Fabricated Using Atomic Layer Deposition. Nat. Electron. 2022, 5 (3), 164-170. DOI: 10.1038/s41928-022-00718-w.(2) Kiriya, D.; Tosun, M.; Zhao, P.; Kang, J. S.; Javey, A. Air-Stable Surface Charge Transfer Doping of MoS2 by Benzyl Viologen. J. Am. Chem. Soc. 2014, 136 (22), 7853-7856. DOI: 10.1021/ja5033327.(3)Kim, S. M.; Jang, J. H.; Kim, K. K.; Park, H. K.; Bae, J. J.; Yu, W. J.; Lee, I. H.; Kim, G.; Loc, D. D.; Kim, U. J.; Lee, E.-H.; Shin, H.-J.; Choi, J.-Y.; Lee, Y. H. Reduction-Controlled Viologen in Bisolvent as an Environmentally Stable n-Type Dopant for Carbon Nanotubes. J. Am. Chem. Soc. 2009, 131 (1), 327-331. DOI: 10.1021/ja807480g.(4) Takei, K.; Kapadia, R.; Li, Y.; Plis, E.; Krishna, S.; Javey, A. Surface Charge Transfer Doping of III–V Nanostructures. J. Phys. Chem. C 2013, 117 (34), 17845-17849. Figure 1

Flexible Organic Electrochemical Transistor Based on Conjugated Conducting Polymers

— The use of organic electrochemical transistors (OECTs) based on conjugated polymers has gained significant recognition owing to their impressive performance, flexibility, ease of fabrication, and suitability for specific applications where solid-state transistors may not be efficiently employed. Key advantages of OECT technology, such as simple device architecture, robustness in ambient or aqueous environments, straightforward additive manufacturing processes, low operational voltage, and compatibility with flexible, rough, stretchable, and large-area substrates, underscore its significance in various applications. These applications span the sensing of glucose [1], bacteria [2], dopamine [3], DNA [4], lactate [5], cell activities [6], and electrophysiological signals [7]. Notably, the absence of the necessity for a reference electrode, a crucial feature for wearable and textile sensors compared to three electrode-based electrochemical sensors, stands out. In this context, we have fabricated a side-gated OECT on a flexible polyethylene terephthalate (PET) substrate through a scalable screen-printing process where the source, drain, and gate terminals are screen-printed using silver (Ag) conductive ink. The semiconducting channel material employed is polyethylene dioxythiophene: polystyrene sulfonate (PEDOT: PSS), which is spin-coated. Additionally, poly methyl methacrylate (PMMA) has been spin-coated to serve as the dielectric. The OECT operates by volumetric gating of the channel through a gel electrolyte containing poly sodium 4-styrene sulfonate (PSSna), enabling polarization of the gate and channel to induce charge accumulation or depletion, driven by the application of a gate-source voltage. The OECT device structure demonstrated switching from the "ON" to "OFF” state with the application of a positive gate voltage, indicating its functionality as a p-type depletion mode transistor. Additionally, the OECT displayed a transconductance (gm) of 6.25×10-4 A/V, mobility (µ) of 1.242×1010 cm2 /Vs, and a threshold voltage (Vth) of -0.39 V, with the on/off ratio being relatively low at 7.22. The repeatability was confirmed through the fabrication of three devices that exhibited nearly identical behavior. Furthermore, in pursuit of faster response time, lower operating voltage, and miniaturization, additional work involves downscaling the active area length to 100µm from the reported 4mm active area length. The fabrication method not only holds the capability for large-scale production with a high yield in a cost-effective manner but also opens up possibilities for applications requiring swift design changes and digitally enabled direct-write techniques. Future work emphasizes functionalizing the electrolyte used in OECT to detect biomolecules such as glucose, pH, and ion species. Thus, this research underscores the potential usability of fabricated OECTs in various high-performance chemical and biological sensing applications. REFERENCES Tang, H.; Yan, F.; Lin, P.; Xu, J.; Chan, H.L.W. Highly Sensitive Glucose Biosensors Based on OrganicElectrochemical Transistors Using Platinum Gate Electrodes Modified with Enzyme and Nanomaterials.Adv. Funct. Mater. 2011, 21, 2264–2272. [CrossRef]He, R.-X.; Zhang, M.; Tan, F.; Leung, P.H.M.; Zhao, X.-Z.; Chan, H.L.W.; Yang, M.; Yan, F. Detection of bacteria with organic electrochemical transistors. J. Mater. Chem. 2012, 22, 22072–22076. [CrossRef]Gualandi, I.; Tonelli, D.; Mariani, F.; Scavetta, E.; Marzocchi, M.; Fraboni, B. Selective detection of dopamine with an all PEDOT:PSS Organic Electrochemical Transistor. Sci. Rep. 2016, 6, 35419. [CrossRef]Tao, W.; Lin, P.; Hu, J.; Ke, S.; Song, J.; Zeng, X. A sensitive DNA sensor based on an organic electrochemical transistor using a peptide nucleic acid-modified nanoporous gold gate electrode. RSC Adv. 2017, 7, 52118–52124. [CrossRef]Braendlein, M.; Pappa, A.-M.; Ferro, M.; Lopresti, A.; Acquaviva, C.; Mamessier, E.; Malliaras, G.G. Owens, R.M. Lactate Detection in Tumor Cell Cultures Using Organic Transistor Circuits. Adv. Mater. 2017, 1605744.Lin, P.; Yan, F.; Yu, J.; Chan, H.L.W.; Yang, M. The Application of Organic Electrochemical Transistors in Cell-Based Biosensors. Adv. Mater. 2010, 22, 3655–3660Liang, Y.; Ernst, M.; Brings, F.; Kireev, D.; Maybeck, V.; Offenhäusser, A.; Mayer, D. High Performance Flexible Organic Electrochemical Transistors for Monitoring Cardiac Action Potential. Adv. Healthc. Mater. 2018, 1800304. [CrossRef] Figure 1

Induction of Ductile Modes of Ice Fracture and Drastic Enhancement of Its Fracture Energy by Means of Introduction of Nanoscale Additives

Induction of Ductile Modes of Ice Fracture and Drastic Enhancement of Its Fracture Energy by Means of Introduction of Nanoscale Additives

Self‐Doped Mixed Ionic‐Electronic Conductors to Tune the Threshold Voltage and the Mode of Operation in Organic Electrochemical Transistors

AbstractOrganic mixed ionic‐electronic conductors with tunable doping, low threshold voltages, and air stability are crucial for bioelectronic applications. A homopolymer based on an alkoxy thiophene monomer and its copolymer with a thiophene carrying ethylene glycol side chains are synthesized and converted to self‐doped conjugated polyelectrolytes, P3HOTS‐TMA+, and P3HOTS‐TMA+‐co‐P3MEEET. The self‐doping occurs during the conversion to polyelectrolytes. Both polyelectrolytes show high electrical conductivity without any external dopants. UV–Vis–NIR spectroscopy and spectroelectrochemistry confirm excellent air stability of the doped state. In an organic electrochemical transistor (OECT), the P3HOTS‐TMA+ operates in depletion mode, while P3HOTS‐TMA+‐co‐P3MEEET exhibits accumulation mode of operation with low threshold voltage, both showing fast response times. On the other hand, the non‐doped homopolymer, P3MEEET, shows a high negative threshold voltage in accumulation mode. Thus, copolymerization with the self‐dopable monomer changes the mode of operation as well as the threshold voltage substantially. Ultraviolet photoelectron spectroscopy reveals a considerable reduction of the hole injection barrier for the self‐doped system P3HOTS‐TMA+. Mott‐Schottky analysis shows reduction in charge carrier concentration in the copolymer compared to the homopolymer. Thus, the copolymerization strategy with a self‐dopable monomer is an efficient tool for tuning the degree of doping leading to low threshold voltage in OECTs.

Evaluation of preoperative magnetic resonance imaging features and diagnostic effectiveness of grades II and III intracranial solitary fibroma

ObjectivesTo explore the value of preoperative magnetic resonance imaging (MRI) characterization of intracranial solitary fibrous tumors (ISFT) and to evaluate the effectiveness of preoperative MRI features in predicting pathological grading.Materials and methodsThis retrospective analysis comprised the clinical and preoperative MRI characterization of 55 patients with ISFT in our hospital, including 27 grade II cases and 28 grade III cases confirmed by postoperative pathology. Variables included age, sex, tumor location, cross-midline status, signal characteristics of T1-weighted imaging (T1WI), T2-weighted imaging (T2WI), T2-fluid-attenuated inversion recovery (T2-FLAIR), and diffusion‑weighted imaging (DWI), peritumoral edema, intralesional hemorrhage, focal necrosis/cystic degeneration, tumor empty vessel, maximum tumor diameter, maximum, minimum, and average values of apparent diffusion coefficient (ADCmax, ADCmin, and ADCmean), tumors enhancement mode, meningeal tail sign, skull invasion, cerebral parenchymal invasion, and venous sinus involvement. The independent samples t test or Mann–Whitney U test was performed to compare continuous data between the two groups, and the Pearson chi-squared test or Fisher’s exact test was used to compare categorical data. In addition, bivariate logistic regression was performed to construct a comprehensive model, and receiver operating characteristic (ROC) curves were generated to calculate the areas under the curve (AUCs), thereby determining the value of each parameter in the differential diagnosis of grades II and III ISFT.ResultsThe mean age at onset was similar between patients with grades II and III ISFT (46.77 ± 14.66 years and 45.82 ± 12.07 years, respectively). The proportions of men among patients with grades II and III ISFT were slightly higher than those of female patients (male/female: 1.25 [15/12] and 1.33 [16/12], respectively). There were significant differences between grades II and III ISFT in the T2-FLAIR and DWI signal characteristics, maximum, minimum, and average values of the apparent diffusion coefficient (ADCmax, ADCmin, and ADCmean), tumor location, and skull invasion (P = 0.001, P = 0.018, P = 0.000, P = 0.000, P = 0.000, P = 0.010, and P = 0.032, respectively). However, no significant differences were noted between grades II and III ISFT in age, sex, cross-midline status, T1WI and T2WI signal characteristics, peritumoral edema, intralesional hemorrhage, focal necrosis/cystic degeneration, tumor empty vessel shadow, enhancement mode, meningeal tail sign, maximum tumor diameter, brain parenchyma invasion, or venous sinus involvement (all P > 0.05). Moreover, binary logistic regression analysis showed that the model accuracy was 89.1% when ADCmin was included in the regression equation. Moreover, ROC curve analysis showed that the AUC of ADCmin was 0.805 (0.688, 0.922), sensitivity was 74.1%, specificity was 75.0%, and the cutoff value was 672 mm2/s.ConclusionsGrade III ISFT patients displayed more mixed T2-FLAIR signal characteristics and DWI signal characteristics than grade II patients, as shown by higher skull invasion and tumor mass collapse midline distribution and lower ADCmax, ADCmean, and ADCmin values. The ADCmin value was significant in the preoperative assignment of grades II and III ISFT, thereby contributing to enhanced accuracy in the imaging grading diagnosis of the disease.

Study of geometry effect on the performance of thin-film transistors fabricated with ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition for high voltage applications

Enhancement mode thin film transistors (TFTs) having different geometries were fabricated on the Zinc gallium oxide (ZnGa2O4) epilayer grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). A field emission scanning electron microscope, atomic force microscopy, and X-ray diffraction were employed to conduct a detailed analysis of the film composition, morphology, and crystal structure. The distance between the source-to-gate and gate length was kept to be 7 μm and 3 μm in all the devices with varying gate-to-drain lengths of 10, 20, and 30 μm. Moreover, neutral beam etching technology was employed to isolate the individual devices and reduce the defects induced by plasma etching. It was found that the threshold voltage changes from 6 V to 7.6 V with the increase in source to drain length from 20 μm to 40 μm. The On/Off ratio of the devices was found to be 105, with a maximum current around 1 μA/mm. Additionally, the device breakdown voltage increased from 240 V to about 656 V with the increase in the device length. The results demonstrate the fabrication of the high breakdown voltage ZnGa2O4-based TFT and establish the co-relation of the source to drain length with the device characteristics.

Spin–orbit optical broadband achromatic spatial differentiation imaging

Spatial optical analog differentiation allows ultrahigh-speed and low-power-consumption of image processing, as well as label-free imaging of transparent biological objects. Optical analog differentiation with broadband and incoherent sources is appealing for its multi-channels and multi-task information processing, as well as the high-quality differentiation imaging. Currently, broadband and incoherent optical differentiation is still challenging. Here, a compact and broadband achromatic optical spatial differentiator is demonstrated based on the intrinsic spin–orbit coupling in a natural thin crystal. By inserting a uniaxial crystal just before the camera of a conventional microscope, the spin to orbit conversion will embed an optical vortex to the image field and make a second-order topological spatial differentiation to the field, thus an isotropic differential image will be captured by the camera. The wavelength-independent property of the intrinsic spin–orbit coupling effect allows us to achieve broadband analog computing and achromatic spatial differentiation imaging. With this differentiation imaging method, both amplitude and pure phase objects are detected with high contrast. Transparent living cells and biological tissues are imaged with their edge contours and intracellular details protruded in the edge detection mode and edge enhancement mode, respectively. These findings pave the way for optical analog computing with broadband incoherent light sources and concurrently drive the advancement of high-performance and cost-effective phase contrast imaging.

Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.

We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe2 devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe2 interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe2 channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |VD| = 1 V reaches 170 μA/μm for p-FET and 165 μA/μm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.

A 2D/3D convertible integral imaging display with enhanced depth of field

Depth of field (DOF) enhancement and two-dimensional (2D)/three-dimensional (3D) convertible display are important research areas of integral imaging 3D display. However, there is no accurate definition of DOF in existing integral imaging 3D displays, and it is difficult to realize DOF enhancement and 2D/3D convertible display simultaneously. In this paper, we propose a DOF analysis method for integral imaging 3D display, and derive an accurate definition of DOF by analyzing the voxel formation mechanism and the minimum resolution angle of the human eyes. Then a 2D/3D convertible integral imaging display with an enhanced DOF is proposed based on the definition of the DOF. The DOF enhancement and different display modes of 2D and 3D are realized by using two sets of dual-state optical components, including polymer dispersed liquid crystal (PDLC) films and liquid crystal micro-lens arrays (LCMLAs). When PDLC film in one set is scattering and LCMLA has the optical properties of a micro-lens array, while PDLC film in the other set is transparent and LCMLA has the optical properties of a flat glass at the same time, the system operates in 3D display modes. Two sets of DOFs are formed in turns and spliced to enhance the whole DOF based on the persistence of vision. When only one PDLC film is scattering and two LCMLAs both have the optical properties of a flat glass, the system realizes 2D display. The experiments on the 2D/3D convertible integral imaging display prototype verify that the DOF is enhanced to 1.71 times and 2D/3D convertible display is realized simultaneously compared with the display based on a conventional micro-lens array. The proposed display has potential for applications in areas such as education and medical care.

DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer

The DC and RF assessment of critical barrier-AlGaN/GaN nano channel tri-gate fin-shaped High Electron Mobility Transistor (FinHEMT) is investigated for Enhancement-mode (E-mode) operation. We propose and analyze critical barrier layer (CBL) and critical-strained barrier layer (CSBL) FinHEMT for a fixed fin-shaped channel width (W fin = 160 nm) and height (H fin = 70 nm). The CBL FinHEMT ensures an E-mode operation by depleting two-dimensional electron gas (2DEG) near the channel region between AlGaN and GaN hetero-junction. The extracted threshold voltage (V T ) in CBL FinHEMT is 0.4 V as compared to −0.2 V obtained in CSBL FinHEMT. However, increased gate leakage current density and poor gate voltage swing in CBL FinHEMT is improved through a metal-oxide-semiconductor FinHEMT (FinMOSHEMT) structure by the incorporation of Al2O3 gate oxide layer between the tri-gate and CBL AlGaN layer. It results in a stable positive VT of 0.5 V due to the negatively charged Al2O3/barrier interface fixed charge density ( NAl2O3 ). The proposed CBL FinMOSHEMT has also been studied for different atomic layer deposition Al2O3 process-dependent variations in NAl2O3. The maximum on-state drain current and transconductance of 1.01 A mm−1 and 430 mS/mm have been extracted respectively with NAl2O3 of −9.2 × 1012 cm−2. Further, the RF analysis of the proposed CBL FinMOSHEMT structure with the same dimension exhibits improved f T and f max responses with 27 GHz and 90 GHz respectively over CBL FinHEMT. The results of the frequency responses obtained for the proposed design make it suitable for power electronics applications.

A Simple Scan Driver Circuit Suitable for Depletion-Mode Metal-Oxide Thin-Film Transistors in Active-Matrix Displays

Metal-oxide (MOx) thin-film transistors (TFTs) require complex circuit structures to cope with their depletion mode characteristics, making them applicable only to large-area active matrix (AM) displays despite their low manufacturing cost and decent performance. In this paper, we report a simple MOx 10T-2C scan driver circuit that overcomes the depletion mode characteristics using a series-connected two transistor (STT) configuration and clock signals with two kinds of low-voltage levels. The proposed circuit has a wide operating range of TFT characteristics, i.e., −2.8 V ≤ VTH ≤ +3.0 V. Through the measurement results of the manufactured sample, it was confirmed that the performance and area of our circuit are suitable for high-resolution mobile displays.

Performance evaluation of solar-PV integrated hybrid fuzzy-logic controlled multi-functional UPQC for enhancing PQ features

To improve distribution system voltage and current quality, a newly built solar-PV system connected multi-functional universal power quality compensator (MFUPQC) has been extensively used. The proposed MFUPQC mitigates both load and source-side concerns in a three-phase distribution system. Furthermore, as part of the distributed generation scheme, active power from solar PV is injected into the grid or source when solar PV is available. In this context, the proposed MFUPQC was tested in both PQ enhancement and DG integration modes using a feasible control scheme. The proportional-integral controller is used for shunt- voltage-source inverter (VSI) DC-link control, which is not suitable for regulating DC-link voltage at the desired level due to incorrect gain value selection. In this work, an intelligent hybrid-fuzzy-logic DC-link control of MFUPQC evidences the intelligent knowledge base for better regulation of power-quality issues. The suggested hybrid fuzzy-logic controlled MFUPQC device's performance for both power quality (PQ) improvement and DG integration is validated using the MATLAB/Simulink software tool, and simulation results are provided with an appealing comparison analysis.

High-frame-rate contrast-enhanced ultrasound to differentiate between clear cell renal cell carcinoma and angiomyolipoma

BackgroundTo investigate the diagnostic efficacy of high-frame-rate contrast-enhanced ultrasound (H-CEUS) in differentiating between clear cell renal cell carcinoma (CCRCC) and angiomyolipoma (AML).MethodsA retrospective study was performed on the clinical data of 79 patients diagnosed with CCRCC and 31 patients diagnosed with AML at the First Affiliated Hospital of Nanchang University between October 2022 and December 2023. Conventional ultrasound (US) and H-CEUS examinations were conducted on all patients prior to surgery, dynamic images were recorded from the US, and the qualitative and quantitative parameters of H-CEUS were collected. The t-test, χ² test and non-parametric Mann-Whitney test were employed to assess differences in clinical data, US characteristics, and qualitative and quantitative parameters of H-CEUS between the CCRCC and AML groups. The independent risk factors of CCRCC were identified using binary logistic regression. The receiver operator characteristic (ROC) curve was constructed to evaluate the diagnostic effectiveness of clinical + US and H-CEUS in differentiating between CCRCC and AML.ResultsThe CCRCC group and the AML group exhibited significant differences in patient gender, operation mode, nodular echo, and nodule blood flow (χ²=11.698, -, -,=10.582; P<0.001, <0.001, <0.001, and = 0.014, respectively). In addition, the H-CEUS qualitative analysis demonstrated significant differences between the AML group and the CCRCC group with respect to enhancement mode, regression mode, peak intensity, enhancement uniformity, no enhancement, and presence or absence of pseudocapsule (χ²=41.614, -, -, = 2.758, = 42.099, -; P<0.001, <0.001, <0.001, 0.097, <0.001, and <0.001, respectively). The Arrival time (AT) in the CCRCC group was significantly shorter than that in the AML group, as determined by quantitative analysis of H-CEUS (Z=-3.266, P = 0.001). Furthermore, the Peak intensity (PI), Ascent slope (AS), and The area under the curve (AUC) exhibited significantly higher values in the CCRCC group compared to the AML group (Z=-2.043,=-2.545,=-3.565; P = 0.041, = 0.011, and <0.001, respectively). Logistic regression analysis indicated that only gender, nodule echo, the pseudocapsule, AS, and AUC of H-CEUS were independent risk factors of CCRCC. The ROC curve revealed that combining gender and nodule echo yielded a sensitivity of 92.4%, specificity of 64.5%, and an AUC of 0.847 in distinguishing between CCRCC and AML. When combining the H-CEUS parameters of pseudocapsule, AS, and AUC, the sensitivity, specificity, and AUC for distinguishing between CCRCC and AML were 84.8%, 96.8%, and 0.918, respectively. No statistically significant difference was observed in the diagnostic effectiveness of the two methods (Z=-1.286, P = 0.198). However, H-CEUS demonstrated better AUC and specificity.ConclusionsH-CEUS enhances the sensitivity and specificity of differentiating between CCRCC and AML by improving the temporal resolution, offering a more precise diagnostic foundation for identifying the most appropriate therapy for patients.

Hybrid mode for absorption enhancement in the Ga2O3 nanocavity photodetector with grating electrodes

Gallium oxide (Ga2O3) photodetectors have drawn increased interest for their widespread applications ranging from military to civil. Due to the inherent oxygen vacancy defects, they seriously suffer from trade-offs that make them incompetent for high-responsivity, quick-response detection. Herein, a Ga2O3 nanocavity photodetector assisted with grating electrodes is designed to break the constraint. The proposed structure supports both the plasmonic mode and the Fabry–Perot (F-P) mode. Numerical calculations show that the absorption of 99.8% is realized for ultra-thin Ga2O3 (30 nm), corresponding to a responsivity of 12.35 A/W. Benefiting from optical mechanisms, the external quantum efficiency (EQE) reaches 6040%, which is 466 times higher than that of bare Ga2O3 film. Furthermore, the proposed photodetector achieves a polarization-dependent dichroism ratio of 9.1, enabling polarization photodetection. The grating electrodes also effectively reduce the transit time of the photo-generated carriers. Our work provides a sophisticated platform for developing high-performance Ga2O3 photodetectors with the advantages of simplified fabrication processes and multidimensional detection.

Highly efficient silicon modulator via a slow-wave Michelson structure.

The weak free carrier dispersion effect significantly hinders the adoption of silicon modulators in low-power applications. While various structures have been demonstrated to reduce the half-wave voltage, it is always challenging to balance the trade-off between modulation efficiency and the bandwidth. Here, we demonstrated a slow-wave Michelson structure with 1-mm-long active length. The modulator was designed at the emerging 2-μm wave band which has a stronger free carrier effect. A record high modulation efficiency of 0.29 V·cm was achieved under a carrier depletion mode. The T-rail traveling wave electrodes were designed to improve the modulation bandwidth to 13.3 GHz. Up to 20 Gb/s intensity modulation was achieved at a wavelength of 1976 nm.

Enhancement-Mode Carbon Nanotube Optoelectronic Synaptic Transistors with Large and Controllable Threshold Voltage Modulation Window for Broadband Flexible Vision Systems.

The development of large-scale integration of optoelectronic neuromorphic devices with ultralow power consumption and broadband responses is essential for high-performance bionics vision systems. In this work, we developed a strategy to construct large-scale (40 × 30) enhancement-mode carbon nanotube optoelectronic synaptic transistors with ultralow power consumption (33.9 aJ per pulse) and broadband responses (from 365 to 620 nm) using low-work function yttrium (Y)-gate electrodes and the mixture of eco-friendly photosensitive Ag2S quantum dots (QDs) and ionic liquids (ILs)-cross-linking-poly(4-vinylphenol) (PVP) (ILs-c-PVP) as the dielectric layers. Solution-processable carbon nanotube thin-film transistors (TFTs) showed enhancement-mode characteristics with the wide and controllable threshold voltage window (-1 V∼0 V) owing to use of the low-work-function Y-gate electrodes. It is noted that carbon nanotube optoelectronic synaptic transistors exhibited high on/off ratios (>106), small hysteresis and low operating voltage (≤2 V), and enhancement mode even under the illumination of ultraviolet (UV, 365 nm), blue (450 nm), and green (550 nm) to red (620 nm) pulse lights when introducing eco-friendly Ag2S QDs in dielectric layers, demonstrating that they have the strong fault-tolerant ability for the threshold voltage drifts caused by various manufacturing scenarios. Furthermore, some important bionic functions including a high paired pulse facilitation index (PPF index, up to 290%), learning and memory function with the long duration (200 s), and rapid recovery (2 s). Pavlov's dog experiment (retention time up to 20 min) and visual memory forgetting experiments (the duration of high current for 180 s) are also demonstrated. Significantly, the optoelectronic synaptic transistors can be used to simulate the adaptive process of vision in varying light conditions, and we demonstrated the dynamic transition of light adaptation to dark adaptation based on light-induced conditional behavior. This work undoubtedly provides valuable insights for the future development of artificial vision systems.

Optical enhancement mode 2 improves the detection rate of gastric neoplastic lesion in high-risk populations: A multicenter randomized controlled clinical study.

Detection of early neoplastic lesions is crucial for improving the survival rates of patients with gastric cancer. Optical enhancement mode 2 is a new image-enhanced endoscopic technique that offers bright images and can improve the visibility of neoplastic lesions. This study aimed to compare the detection of neoplastic lesions with optical enhancement mode 2 and white-light imaging (WLI) in a high-risk population. In this prospective multicenter randomized controlled trial, patients were randomly assigned to optical enhancement mode 2 or WLI groups. Detection of suspicious neoplastic lesions during the examinations was recorded, and pathological diagnoses served as the gold standard. A total of 1211 and 1219 individuals were included in the optical enhancement mode 2 and WLI groups, respectively. The detection rate of neoplastic lesions was significantly higher in the optical enhancement mode 2 group (5.1% vs. 1.9%; risk ratio, 2.656 [95% confidence interval, 1.630-4.330]; p<0.001). The detection rate of neoplastic lesions with an atrophic gastritis background was significantly higher in the optical enhancement mode 2 group (8.6% vs. 2.6%, p<0.001). The optical enhancementmode2 group also had a higher detection rate among endoscopists with different experiences. Optical enhancement mode 2 was more effective than WLI for detecting neoplastic lesions in the stomach, and can serve as a new method for screening early gastric cancer in clinical practice. United States National Library of Medicine (https://www. gov), ID: NCT040720521.

Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers

A top-gate coplanar-structure thin-film transistor (TFT) combining the advantages of both a co-sputtered amorphous La-doped ZnSnO (a-La-ZTO) active layer and solution-based polymethylmethacrylate (PMMA) gate dielectric layer has been prepared under low temperature (100 °C) with low cost for the first time. The results indicate that the PMMA thin film demonstrates anti-reflection properties when it combines with a-La-ZTO layer to form a double-layer film, displaying high transparency to visible light of ∼90.3%. Moreover, it was found that the La target power during the deposition of a-La-ZTO film plays an important role in suppressing the formation of oxygen vacancies and adjusting the carrier concentration of a-La-ZTO active layer, thus impacting a-La-ZTO TFT performance. Overall, the optimum a-La-ZTO TFT with a La target power of 13.9 W, working in an n-channel enhancement mode, possesses a large saturated mobility (>10 cm2 (Vs)−1) and an on/off drain current ratio over 105.

Novel Temperature Calibration Method of E-Mode and D-Mode GaN Power Modules Considering Dynamic ON-Resistance

This paper presents a method for measuring temperature using the temperature sensitive parameter (TSP) of a GaN power module. Current collapse occurs in GaN high electron mobility transistors (HEMTs). This results in dynamic on-resistance because of trapped electrons. Thus, dynamic conditions should be considered to accurately measure thermal characteristics. GaN HEMTs are operated in the enhanced mode (E-mode) and depletion mode (D-mode). In this study, E-mode and D-mode GaN power modules are designed to compare their thermal characteristics. Among three common temperature-measurement methods, this work employs the TSP-based approach in consideration of the device operation, instead of those using thermo-sensitive optical or material properties. The calibration is conducted in steady-state and dynamic-state. The ambient temperature is estimated using steady-state calibration data. Power cycling is examined for considering dynamic conditions. It is confirmed that dynamic on-resistance changes according to the cycle period, on time, and number of cycles. Experiments are conducted using different values of these parameters. Finally, an equation for temperature is obtained from the experimental results. The equation precisely estimates temperature with an error of 0.7%.

Perovskite quantum laser with enhanced population inversion driven by plasmon-induced hot electron transfer under potential shift polarization conditions

The hot electron transfer resulting in fluorescence enhancement is significantly meaningful for theory and experiment of the study on photoelectric devices. However, the laser emission based on direct hot electron transfer is difficult to realize because of the low transfer efficiency. To achieve a laser with a new-generation mechanism based on hot electron transfer, the photoelectric co-excitation is proposed for improving the efficiency of hot electron transfer. The lasing behavior at 532 nm is realized with a threshold of 5 kw cm−2 and 1 μA, which can be considered as the hot electron transfer resulting in population inversion enhancement. Meanwhile, the lasing output power is 0.3 mW. The hot electrons transfer process was described via the transient absorption spectrum according to the improved ground-state bleaching and excited-state absorption signal in device ON. Through comparison with the optical pump only, the quantum efficiencies of hot electron generation (HEG) and hot electron transfer (HET) were increased ∼31% and 31%, respectively. Most importantly, a triple gain mode coupling device including local surface plasmon, hot electron transfer, and array oscillation was presented. Two modes of population inversion enhancement are proposed. This study can provide theoretical and experimental reference for the research of hot electron lasers and devices.