Abstract
Abstract Top-gate coplanar-structure thin film transistor (TFT) combining advantages of both co-sputtered amorphous La-doped ZnSnO (a-La-ZTO) active layer and solution-based polymethylmethacrylate (PMMA) gate dielectric layer has been prepared under low temperature (100℃) with low cost for the first time. The results indicate that PMMA thin film demonstrates anti-reflection phenomenon when it combines with a- La-ZTO layer to form double-layer film, displaying the high transparency to visible light of ~90.3%. Moreover, it was found that the La target power during the deposition of a- La-ZTO film plays an important role in suppressing the formation of oxygen vacancies and adjusting the carrier concentration of a-La-ZTO active layer, thus impacting on a-La-ZTO TFTs performance. Overall, the optimum a-La-ZTO TFT with a La target power of 13.9W, working in a n-channel enhancement mode, possessed a large saturated mobility (＞10 cm2/Vs) and on/off drain current ratio over 105.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
