Degradation Of Device Performance Research Articles

First Principles Investigations on the Carbon‐Related Defects in Silicon

Defect identification for unintentionally induced defects and radiation‐implemented defects always attracts great attention in semiconductor materials. Recent advances in carbon‐implemented single‐photon emitters in silicon urgently require the accurate identification of defect structures to reveal transition mechanisms. Using hybrid functional with finite size correction, we investigate the charge and optical transitions of carbon‐related defects, including CSiCSi, VSiCSi, CSi, SiiCSiCSi, and Ci. Except for Ci, other defects present the negative‐U feature in the charge transition process. CSiCSi and VSiCSi tend to perform p‐type conductivity with the electron capture transition close to the valence band, of which transition level ε (0/−1) is 0.30 eV for CSiCSi and ε (+1/−2) is 0.34 eV for VSiCSi. CSi and SiiCSiCSi present a bipolar doping character, and CSi tends to capture holes with transition ε (0/+2) = 0.10 eV. The optical transitions that typically emit or absorb light in the telecom optical wavelength bands are identified in these defects in terms of band edge recombination. The zero‐phonon lines of optical transitions of ε (+2/+1) for VSiCSi and Ci are consistent with a previous experiment involving single‐photon emitters. The findings are helpful to understand the performance degradation of silicon devices and provide a reference for identifying the structure of carbon‐related defects in silicon.

A novel prognostic method for degrading devices with nonlinear degradation processes indexed by both continuous and discrete time scales

Remaining useful life (RUL) prediction techniques based on degradation modeling to ensure the safety and reliability of stochastic degraded devices are of critical value. However, although the performance degradation of various devices in engineering practice is affected by multi-timescales, there are few RUL prediction methods for stochastic degraded devices with dual time scales in the existing literature. The research of prediction methods considering continuous and discrete time scales is blank. Toward this end, this paper proposes a novel prognostic method for nonlinear degradation devices based on the continuous-discrete dual time scales. First, the performance degradation with a discrete timescale is determined with a compound Poisson process and integrated into the diffusion process model to establish a nonlinear dual-timescale degradation model. Subsequently, the joint expression of the dual-timescale RUL distribution of the device in the first hitting time sense solves with threshold transformation. Finally, the effectiveness and superiority of the proposed method are verified through a numerical simulation and a gyroscope example. The experimental results show that the proposed method can provide more comprehensive information about the life distribution and effectively improve the accuracy of the RUL prediction.

Photoelectric property degradation of graded barrier InAs/GaSb type II superlattice long-wave infrared detectors under 1 MeV electron irradiation.

Amid rapid advancements in aerospace science and technology, studying the effects of space radiation on an infrared detector is crucial for enhancing their reliability in radiation environments, particularly against electrons-one of the most damaging charged particles. Barrier structures significantly reduce dark current without any substantial degradation in the optical performance of the devices. Consequently, they are being investigated for use in extreme environments. This paper presents a study on the performance degradation of InAs/GaSb type II superlattice (T2SLs) long-wave infrared (LWIR) detectors with a graded barrier structure under 1 MeV electron irradiation and analyzes potential damage mechanisms. The findings indicate that 1 MeV electron irradiation causes both ionization and displacement damage to the graded barrier InAs/GaSb T2SL LWIR detectors. After irradiation with a fluence of 2 × 1015 e/cm2, the device's dark current density has increased by approximately two orders of magnitude, while the quantum efficiency has decreased by approximately one order of magnitude. As the device mesa shrinks, the sensitivity of dark current to radiation exposure increases. Electron irradiation notably exacerbates surface leakage and bulk dark current, with a pronounced increase in surface leakage current. The study also reveals that electron irradiation primarily enhances the dark current by introducing defect states, thereby leading to device performance degradation.

Monolithic three-dimensional integration of complementary two-dimensional field-effect transistors.

The semiconductor industry is transitioning to the 'More Moore' era, driven by the adoption of three-dimensional (3D) integration schemes surpassing the limitations of traditional two-dimensional scaling. Although innovative packaging solutions have made 3D integrated circuits (ICs) commercially viable, the inclusion of through-silicon vias and microbumps brings about increased area overhead and introduces parasitic capacitances that limit overall performance. Monolithic 3D integration (M3D) is regarded as the future of 3D ICs, yet its application faces hurdles in silicon ICs due to restricted thermal processing budgets in upper tiers, which can degrade device performance. To overcome these limitations, emerging materials like carbon nanotubes and two-dimensional semiconductors have been integrated into the back end of silicon ICs. Here we report the M3D integration of complementary WSe2 FETs, in which n-type FETs are placed in tier 1 and p-type FETs are placed in tier 2. In particular, we achieve dense and scaled integration through 300 nm vias with a pitch of <1 µm, connecting more than 300 devices in tiers 1 and 2. Moreover, we have effectively implemented vertically integrated logic gates, encompassing inverters, NAND gates and NOR gates. Our demonstration highlights the two-dimensional materials' role in advancing M3D integration in complementary metal-oxide-semiconductor circuits.

Temperature effects on annealing crucial deep-level defects in neutron-irradiated silicon: Multiscale modeling

Studying temperature effects on defect behaviors during thermal annealing is significant for understanding the performance degradation and recovery of semiconductor devices under irradiation. We systematically studied temperature effects on annealing crucial deep-level defects in neutron-irradiated silicon, by developing a multiscale modeling approach. The temperature-dependent concentrations and electron occupation ratios of crucial defects of divacancies (V2) and tri-vacancies (V3) were given for dynamic and post-irradiation annealing. Besides the common direct dissociation, we found a new approach to eliminating V2 and V3 by their recombination with interstitials dissociated from interstitial-relative defects at relatively low temperatures. To effectively eliminate V2 and V3 by post-irradiation annealing, we further determined the activation energies of 1.98[Formula: see text]eV and 1.71[Formula: see text]eV for V2 and V3, respectively. We also found that, within the operation temperature range of devices, the higher the temperature, the better the radiation resistance. It is thus recommended that the optimal temperature of post-irradiation annealing for device performance recovery is near 600[Formula: see text]K.

Engineering robust and transparent dual-crosslinked hydrogels for multimodal sensing without conductive additives

Conductive hydrogels are pivotal for the advancement of flexible sensors, electronic skin, and healthcare monitoring systems, facilitating transformative innovations. However, issues such as inadequate intrinsic compatibility, mismatched mechanical properties, and limited stability curtail their potential, resulting in compromised device efficacy and performance degradation. In this research, we engineered functional hydrogels featuring a dual-crosslinked network composed of (PA/PVA)-P(AM-AA) to address these challenges. This design eliminates the need for conductive additives, thereby enhancing intrinsic compatibility. Notably, the hydrogels exhibit exceptional mechanical properties, with high tensile strength (∼700 %), Young's modulus (∼5.33 MPa), increased strength (∼2.46 MPa) and toughness (∼6.59 MJ m−3). They also achieve a compressive strength of ∼7.33 MPa at 80 % maximal compressive strain and maintain about 89 % transparency. Moreover, flexible sensors derived from these hydrogels demonstrate enhanced multimodal sensing capabilities, including temperature, strain, and pressure detection, enabling precise monitoring of human movements. The integration of multiple hydrogels into a three-dimensional sensor array facilitates detailed spatial pressure distribution mapping. By strategically applying dual-crosslinked network engineering and eliminating conductive additives, we have streamlined the design and manufacturing of hydrogels to meet the rising demand for high-performance wearable sensors.

Battery Performance Evaluation through Decision Tree

This study addresses the pervasive concern surrounding battery performance degradation in electronic devices. While some attribute this decline to device aging, a significant portion of the population lacks awareness of the precise factors contributing to diminished battery efficiency. Consequently, the research investigates the factors related to battery performance, aiming to identify the determinants of reduced efficiency. Decision trees are used to meticulously analyze the intricate relationships between variables and discern the factors that respondents perceive as causative of diminished battery performance. This algorithm is chosen since, in predicting high-capacity lithium-ion battery performance, the decision tree outperforms other algorithms in machine learning in accuracy. The study elucidates diverse user preferences, with 55.38% favoring Android and 44.62% expressing a preference for iOS, indicating disparate perceptions of battery health: 61.54% consider their batteries as "Good," while 38.46% acknowledge a decline. The decision tree analysis of 195 participants underscores the pronounced impact of prolonged usage on battery health, revealing that 95% maintain good battery performance. In contrast, 27.69% of Android users face reduced battery performance, emphasizing the need for targeted user education and Android manufacturers to prioritize device longevity. The ultimate objective is to give readers a comprehensive understanding of the dynamics of battery performance in the context of device aging and its contributing factors and give some input to manufacturers and service providers.

Ultrafast Unidirectional On‐Chip Heat Transfer

AbstractEffective and rapid heat transfer is critical to improving electronic components' performance and operational stability, particularly for highly integrated and miniaturized devices in complex scenarios. However, current thermal manipulation approaches, including the recent advancement in thermal metamaterials, cannot realize fast and unidirectional heat flow control. In addition, any defects in thermal conductive materials cause a significant decrease in thermal conductivity, severely degrading heat transfer performance. Here, the utilization of silicon‐based valley photonic crystals (VPCs) is proposed and numerically demonstrated to facilitate ultrafast, unidirectional heat transfer through thermal radiation on a microscale. Utilizing the infrared wavelength region, the approach achieves a significant thermal rectification effect, ensuring continuous heat flow along designed paths with high transmission efficiency. Remarkably, the process is unaffected by temperature gradients due to the unidirectional property, maintaining transmission directionality. Furthermore, the VPCs' inherent robustness affords defect‐immune heat transfer, overcoming the limitations of traditional conduction methods that inevitably cause device heating, performance degradation, and energy waste. The design is fully CMOS compatible, thus will find broad applications, particularly for integrated optoelectronic devices.

Atomic-Resolution Interfacial Reaction Mechanism between Bi2Te3-Based Alloys and Ni Electrodes.

Interdiffusion and solid-solid phase reaction at the interface between thermoelectric (TE) materials and the electrode critically influence interfacial transport properties and the overall energy conversion efficiency during service. Here, the microstructural evolution and diffusion mechanisms at the interfaces between the most widely used Bi2Te3-based TE materials, n-type Bi2Te2.7Se0.3 (BTS) and p-type Bi0.5Sb1.5Te3 (BST), and Ni electrodes were investigated at atomic resolution using spherical aberration-corrected scanning transmission electron microscopy (STEM). The BTS(0001)/Ni and BST(0001)/Ni interfaces were constructed by depositing Ni nanoparticles on mechanically exfoliated BTS and BST bulk materials and subsequent annealing. The interfacial reaction is initially dominated by Ni diffusion into the TE matrix to form NiAs-type NiM intermetallics, while Ni trans-quintuple-layer diffusion only occurs in Sb-rich BST. The Bi-rich BTS is more influenced by the Ni-Te preferential reaction, resulting in NiM abnormal grain growth and the formation of tilted and rotated interfaces. Bi diffusion into the BTS matrix forms a Bi double layer at the interface or Bi2[Bi2(Te,Se)3] as the annealing temperature increases, while Bi diffusion into the Ni thin film greatly accelerates the interfacial reaction rate, as elucidated by in situ heating STEM. The results provide essential structural details to understand and prevent the degradation of TE device performance.

Visualizing the Structure-Property Nexus of Wide-Bandgap Perovskite Solar Cells under Thermal Stress.

Wide-bandgap perovskite solar cells (PSCs) toward tandem photovoltaic applications are confronted with the challenge of device thermal stability, which motivates to figure out a thorough cognition of wide-bandgap PSCs under thermal stress, using in situ atomic-resolved transmission electron microscopy (TEM) tools combing with photovoltaic performance characterizations of these devices. The in situ dynamic process of morphology-dependent defects formation at initial thermal stage and their proliferations in perovskites as the temperature increased are captured. Meanwhile, considerable iodine enables to diffuse into the hole-transport-layer along the damaged perovskite surface, which significantly degrade device performance and stability. With more intense thermal treatment, atomistic phase transition reveals the perovskite transform to PbI2 along the topo-coherent interface of PbI2/perovskite. In conjunction with density functional theory calculations, a mutual inducement mechanism of perovskite surface damage and iodide diffusion is proposed to account for the structure-property nexus of wide-bandgap PSCs under thermal stress. The entire interpretation also guided to develop a thermal-stable monolithic perovskite/silicon tandem solar cell.

Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties.

AlN/diamond heterostructures hold tremendous promise for the development of next-generation high-power electronic devices due to their ultrawide band gaps and other exceptional properties. However, the poor adhesion at the AlN/diamond interface is a significant challenge that will lead to film delamination and device performance degradation. In this study, the uniaxial tensile failure of the AlN/diamond heterogeneous interfaces was investigated by molecular dynamics simulations based on a neuroevolutionary machine learning potential (NEP) model. The interatomic interactions can be successfully described by trained NEP, the reliability of which has been demonstrated by the prediction of the cleavage planes of AlN and diamond. It can be revealed that the annealing treatment can reduce the total potential energy by enhancing the binding of the C and N atoms at interfaces. The strain engineering of AlN also has an important impact on the mechanical properties of the interface. Furthermore, the influence of the surface roughness and interfacial nanostructures on the AlN/diamond heterostructures has been considered. It can be indicated that the combination of surface roughness reduction, AlN strain engineering, and annealing treatment can effectively result in superior and more stable interfacial mechanical properties, which can provide a promising solution to the optimization of mechanical properties, of ultrawide band gap semiconductor heterostructures.

Theoretical simulation of mixed organic–inorganic perovskite solar cell using SCAPS-1D simulator

In this work, a triple cation mix halide perovskite solar cell is explored to improve its stability and efficiency. FTO/SnO2/perovskite/CuSCN/carbon the device structure is simulated using SCAPS-1D and outcomes and found in good agreements with experimental results. Furthermore, the effect of various parameters like absorbance coefficient, reflection of front surface, defect capture cross section and defect position on device performance are examined. This optimized device exhibits high PCE, 27.10 % with Voc = 1.24 V, Jsc = 25.37 mA/cm2 and FF = 85.70 %. Finally, the effects of temperature, absorber defect density and interface defect density are computed on optimised structure and observed degradation in device performance with increase in these factors. Lastly, the results are concluded using J-V and EQE curves. This study may be vital in the development of stable and highly efficient triple cation perovskite solar cell technology.

GaN HEMT for High-performance Applications: A Revolutionary Technology

Background: The upsurge in the field of radio frequency power electronics has led to the involvement of wide bandgap semiconductor materials because of their potential characteristics in achieving high breakdown voltage, output power density, and frequency. III-V group materials of the periodic table have proven to be the best candidates for achieving this goal. Among all the available combinations of group III-V semiconductor materials, gallium nitride (GaN), having a band gap of 3.4eV, has gradually started gaining the confidence to become the next-generation material to fulfill these requirements. Objective: Considering the various advantages provided by GaN, it is widely used in AlGaN/GaN HEMTs (High Electron Mobility Transistors) as their fundamental materials. This work aimed to review the structure, operation, and polarization mechanisms influencing the HEMT device, different types of GaN HEMT, and the various process technologies for developing the device. Methods: Various available methods to obtain an enhancement type GaN HEMT are discussed in the study. It also covers the recent developments and various techniques to improve the performance and device linearity of GaN HEMT. Conclusion: Despite the advantages and continuous improvement exhibited by the GaN HEMT technology, it faces several reliability issues, leading to degradation of device performance. In this study, we review various reliability issues and ways to mitigate them. Moreover, several application domains are also discussed, where GaN HEMTs have proven their capability. It also focuses on reviewing and compiling the various aspects related to the GaN HEMT, thus providing all necessary information.

Enhancing ferroelectricity in HfAlOx-based ferroelectric tunnel junctions: A comparative study of MFS and MFIS structures with ultrathin interfacial layers

This study explores the potential advantages of metal–ferroelectric–insulator–semiconductor (MFIS) structures compared with established metal–ferroelectric–semiconductor (MFS) and metal–ferroelectric–metal structures in the context of nonvolatile memory devices. Despite the superior performance of MFS structures in terms of electric field maintenance, switching speed, and power consumption, the presence of interface-related issues between the ferroelectric material and the semiconductor may degrade device performance. We propose an MFIS structure incorporating ultrathin interfacial layers (ILs) of SiO2, HfO2, and ZrO2 to address these issues. These insulator layers enhance device endurance by reducing physical stress and trap density at the interface, thereby improving electrical performance and long-term stability. Moreover, the presence of an IL reduces charge leakage between the ferroelectric layer and semiconductor, contributing to the resolution of the sneak path current problem. An additional feature of MFIS devices is their self-rectifying behavior, simplifying circuit design and manufacturing processes by eliminating the need for an external rectification circuit, consequently reducing costs. Through a series of experiments, this study evaluates the performance of the MFIS structure, investigates the ferroelectric properties of HfAlOx-based FTJs, and examines the conduction mechanism of the MFIS structure. By comparing the o-phase of MFS, SiO2, HfO2, and ZrO2 devices via grazing incidence X-ray diffraction (GIXRD) and using the positive-up-negative-down method to extract polarization and coercive voltage, we provide a comprehensive investigation of the impact of ultrathin ILs on ferroelectric properties. This research aims to offer valuable insights into the advancement of memory device technologies, presenting the MFIS structure as a promising platform for next-generation memory technologies. Further sections will elaborate on the experimental setup, methodology, and detailed study findings.

Multivariable degradation modeling and life prediction using multivariate fractional Brownian motion

In system prognostics and health management, multivariable degradation models have been widely developed to predict the life of complex systems using degradation data of multiple Performance Characteristics (PCs). Recent studies have detected a Long-Term Memory (LTM) effect among the degradation process of various PCs, implying a strong coupling phenomenon between the future degradation behavior and historical degradation trajectory. Although the LTM has been widely integrated into single-PC-based degradation modeling, it has not been considered in multi-PC-based scenarios. To capture LTM among multiple PCs, this article proposes a novel LTM-integrated Multivariate Degradation Model (MDM) for system life prediction based on multivariate fractional Brownian motion, which simultaneously incorporates the cross-correlation among different PCs. To estimate parameters of the LTM-integrated MDM, a maximum likelihood method is developed. Two likelihood-ratio hypothesis tests are developed to test the existence of the overall and individual LTM effect among multiple PCs. Both simulation studies and physical experiments on the performance degradation of solar energy conversion and storage devices are conducted to validate the proposed model. Results reveal that the proposed LTM-integrated MDM significantly outperforms existing MDMs in life prediction, while the lifetime uncertainty is heavily underestimated by those traditional approaches that neglect the LTM.

Flexible resistive memory device with egg-albumen/HfO x hybrid bilayer: fabrication and modeling of its switching variations

Egg-albumen, a natural polymer, in bilayer combination with ultrathin HfO x is explored as an active switching layer component in flexible resistive random access memory devices. The fabricated devices have shown excellent switching characteristics with a current on/off ratio of greater than 104, stable retention of both low resistance and high resistance states, reliable multiple cycle switching, and very low switching power (with set power as 0.5 µW and reset power as 3.1 mW). To investigate the electro-mechanical stability, devices were bent with different bending radii and it was found that negligible degradation in device performance was observed until a 5 mm bending radius. Furthermore, a simple mathematical model is used to simulate the devices’ characteristics and the values of fitting parameters were extracted with a root mean square error of less than 4.5%. Moreover, a switching variation was introduced by utilizing variations of the physical parameters, and a near practical physics based mathematical device model was demonstrated which can enable the strengthening of simulation capabilities for exploration of unique flexible resistive memory devices and related circuits.

Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

We demonstrated the crystal growth of group-III arsenides (III-As) on GaN via an arsenidation layer and GaN-channel electron mobility transistors (HEMTs) with a regrowth InAs/GaAs source and drain (S/D) region. By annealing under an AsH3 atmosphere, the surface of a GaN (0001) template is arsenided. We grew ⟨111⟩ oriented InAs and GaAs on arsenided GaN. Silicon-doped n-type InAs with a carrier mobility of over 1500 cm2/V s and a carrier concentration of over 1 × 1019 cm−3 was successfully obtained. The fabrication process and direct-current characteristics of GaN-channel HEMTs with the regrown Si-doped InAs/GaAs S/D region were demonstrated for the first time. A maximum transconductance estimated from transfer characteristics was as high as ∼195 mS/mm for the HEMT with a gate length of 2 μm without passivation, which is comparable to those for the HEMT without any S/D regrowth. The impact of the InAs/GaAs S/D region on the on-resistance of the fabricated HEMTs was estimated to be ∼0.9 Ω mm, which can be reduced by optimizing the device structures and process conditions. These results indicate that the process of GaN arsenidation and III-As regrowth can be used without any device performance degradation. Therefore, further lowering the ohmic contact resistivity and on-resistance of GaN-channel HEMTs is possible by maturing the manufacturing-process technology of III-As-contained GaN-channel HEMTs.

Effect of mild mechanical stresses on device physics of slot-die coated flexible perovskite solar cells

Halide perovskites are a promising class of novel photoactive materials for their application in flexible photovoltaic devices. Tolerance and stability of devices to various mechanical stresses are important aspects of this technology for its effective and long-term operation. Currently, this aspect has not been fully researched and addressed by the research community. Hence, this work is aimed at studying the effect of mild mechanical stresses (MMSs) induced by convex bending on the behaviour of ITO/ZnO/MAPbI3/Spiro-OMeTAD/Au slot-die-coated flexible perovskite solar cells (FPSCs) and investigating the underlying mechanisms leading to performance degradation in devices. The carrier generation, recombination, and extraction processes within FPSCs are investigated before and after the application of MMSs. The obtained results suggest that the photovoltaic performance of the FPSCs deteriorates by up to 50% after convex bending, due to increased non-radiative recombination losses. The results obtained in this work provide some valuable insights into the dynamics of recombination processes in FPSCs exposed to MMSs and can be used for developing new strategies for improving the mechanical stability of devices.

TCAD simulation study of heavy ion radiation effects on hetero junctionless tunnel field effect transistor

Semiconductor devices used in radiation environment are more prone to degradation in device performance. Junctionless Tunnel Field Effect Transistor (JLTFET) is one of the most potential candidates which overcomes the short channel effects and fabrication difficulties. In this work, 20 nm JLTFET is proposed with Silicon in the drain/channel region whereas source uses different materials, Silicon Germanium (SiGe), Gallium Nitride (GaN), Gallium Arsenide (GaAs), Indium Arsenide (InAs). The device performance is examined by subjecting it to heavy ion radiation at a lower and higher dose of linear energy transfer (LET) values. It can be seen that the most sensitive location is the source/channel (S/C) interface for SiGe, GaN and GaAs whereas the drain/channel (D/C) interface for InAs. Further analysis is carried out at these vulnerable regions by matching ION of all materials. The parameters, transient peak current (Ipeak), collected charge (QC), threshold voltage shift (ΔVth) and bipolar gain (β) are extracted using transient simulations. It is observed that for a lower dose of LET, Ipeak of SiGe is 27% lesser than InAs and for higher dose of LET, SiGe shows 56% lesser Ipeak than InAs. SiGe is less sensitive at lower and higher dose of LET due to reduced ΔVth, tunneling and electron density.

Charge transport and ion migration in perovskite-incorporated conjugated polymer semiconductor

The migration of intrinsic ions in metal halide perovskites and their interfaces has been shown to contribute to hysteresis and performance degradation in perovskite-based electronic devices, particularly in photovoltaics and transistors. Accordingly, controlling the film morphology, microstructure, and ionic defects in perovskite semiconductors is essential for advancing and achieving high-performance perovskite field-effect transistors (FETs). In this study, we demonstrate a well-controlled method to systematically probe the structure-property relationships, origin of hysteresis, and intrinsic ion migration effects in formamidinium iodide and lead iodide (FAI + PbI2)-based perovskite by incorporating it in a semicrystalline conjugated poly(3-hexylthiophene) (P3HT) polymer. Optimized FETs exhibited over 100% hole mobility enhancement owing to unperturbed edge-on crystalline orientation of the P3HT chains caused by the incorporated perovskite, P3HT-(FAI + PbI2) interactions, and better charge injection properties. However, the optimized devices exhibited improved current modulation with dual-sweep hysteresis, which was attributed to the ion migration effect contributed by the polarization of the lead/iodine-related ions and defects. Furthermore, operational stability investigation of the P3HT-(FAI + PbI2) FETs in the air revealed gradual current decay owing to charge trapping in contrast to the control P3HT FETs. This work provides a fundamental understanding of the origin of hysteresis and instabilities in metal perovskite materials and their transistor-based devices.