As features on integrated circuits (IC) continue to shrink, the implementation of chemical mechanical planarization (CMP) is a critical processing step to reduce surface topography in an effort to continue to extend Moore’s law. Specifically, Cu CMP utilizes complex slurry formulations containing an abrasive nanoparticle (SiO2) and additives (i.e., corrosion inhibitors, oxidizers, and complexing agents) to achieve angstrom level uniformity. However, one drawback to this process is the generation of detrimental surface defects that result from residual contamination (i.e., organic residues, abrasive particles, pad remnants, etc.) that are reliant on post-CMP (p-CMP) cleaning methods. Current Cu p-CMP cleaning methods implement the use of an industry standard polymer brush coupled with cleaning chemistries to remove residual contamination. It has been well established that shear and compressive forces coupled with surface active cleaning chemistries have proven to be efficient albeit with the potential for secondary defect induction (i.e., pitting, etching, scratching). Additionally, current cleaning formulations rely on additives that promote aggressive redox conditions to remove residues through an undercutting mechanism, which leads to the propagation of the aforementioned defect modes. This work focuses on the investigation of “soft” cleaning chemistries via the implementation of a structurally unique additive to create a synergy at the liquid-brush-wafer interface. More specifically, the implementation of an -unsaturated carboxylic acid (i.e., itaconic acid) has shown the capability of chemically activating an organic residue mosaic (i.e., BTA/nanoparticle) resulting in effective removal through an “overcutting” mechanism to significantly alter mechanical processing conditions. Through the implementation of corrosion studies utilizing a rotating disk electrode, the addition of itaconic acid has shown a reduction in icorr value and a shift in the passivation characteristics of the system. Open circuit potential (OCP) vs. time measurements indicates that the recovery of the passivation film is more effective in the itaconic acid formulation. A time resolved contact angle technique showed that itaconic acid had a significantly faster diffusion rate on a Cu surface coated with an exaggerated residue film indicating an enhanced surface adsorption. Furthermore, there is clear evidence that under brush conditions the presence of itaconic acid significantly enhances the removal of organic residues at the surface of a Cu substrate without the expense of effective nanoparticle removal.