Deep Ultraviolet Emission Research Articles

A hBN/Ga2O3 pn junction diode.

The development of next-generation materials such as hBN and Ga2O3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga2O3, forming a pseudo-vertical pn hBN/Ga2O3 heterojunction device. Rectification ratios > 105 (300K) and [Formula: see text]400 (475K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10V. Critically, device performance remains stable and highly repeatable after a multitude of temperature ramps to 475K. Capacitance-voltage measurements indicate widening the depletion region under increasing reverse bias voltage and a built-in voltage of 2.34V is recorded. The hBN p-type characteristic is confirmed by Hall effect, a hole concentration of [Formula: see text] cm-3 and mobility of 24.8 cm2/Vs is achieved. Mg doped hBN resistance reduces by >108 compared to intrinsic material. Future work shall focus on the optical emission properties of this material system.

GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates

Recently, deep-ultraviolet (DUV) light-emitting devices have attracted attention for various applications. GaN/AlN superlattices have emerged as a promising alternative for achieving high-efficiency DUV emission. To fabricate superlattices with high crystal quality and abrupt interfaces, we have utilized face-to-face-annealed sputter-deposited AlN template substrates characterized by a flat surface and low dislocation density. Furthermore, radio-frequency plasma-assisted molecular beam epitaxy with in situ reflection high-energy electron diffraction monitoring was employed for the growth process. The growth of the superlattices follows a specific sequence. Step 1: AlN growth, Step 2: conversion of Al droplets to AlN, Step 3: GaN growth, and Step 4: evaporation of Ga droplets. This study explored the impact of GaN thickness on the GaN/AlN superlattice. The GaN thickness was linearly controlled by changing the duration of Step 3. This approach allowed for the growth of a flat GaN layer up to 1 monolayer (ML) and achieved superlattices with abrupt interfaces. Single-peak cathodoluminescence (CL) emission at 240–245 nm was observed from the superlattices, with the peak shift toward longer wavelengths as the GaN thickness increased. In contrast, quantum dot-like GaN islands were generated with a thickness of over 1 ML, induced by compressive strain. Superlattices with thicker GaN exhibited broad CL emission with multiple peaks. However, the AlN barrier layer reduced the surface roughness and maintained abrupt interfaces within the superlattices. Therefore, to obtain sharp single-peak UV emission from GaN/AlN superlattices, the growth sequence should be controlled to obtain flat GaN layers without dots.

DUV electroluminescence from Bi3+-doped bi-phase yttrium phosphate

Trivalent-doped tetragonal xenotime yttrium orthophosphate phosphors have attracted significant attention as promising materials for deep ultraviolet (DUV) luminescence. In this study, we achieved DUV electroluminescence (EL) using Bi3+-doped bi-phase yttrium phosphate (YPB) phosphor under an AC-driven sinusoidal waveform. Phosphor powder was synthesized via a solid-state reaction with an optimal Bi3+ concentration. The phosphor exhibited a mixed phase of xenotime tetragonal YPO4 and monoclinic Y(PO3). We suggest that the mixed phase within the phosphor particles plays a crucial role in enhancing light generation via a bipolar field emission mechanism in the developed powder-based EL device. It emitted a narrow-band DUV emission spectrum peaking at 243 nm, which was attributed to the 3P1 → 1S0 transition of the Bi3+ ions within the mixed host lattices. Moreover, it has a lower voltage application than the excimer lamp DUV sources. The application of the YPB phosphor in EL devices presents an appealing outlook for future advancements in the development of DUV sources.

Growth of AlGaN alloys with ∼ 90 % AlN mole fraction by plasma-assisted molecular beam epitaxy: Indication of phase-segregation effects

AlGaN alloys with very high AlN mole fraction (∼90 %) were grown by plasma-assisted molecular beam epitaxy (PA-MBE) and their alloy properties were investigated by high-resolution X-ray diffraction (HR-XRD) measurements. Growth was carried out employing a series of group III/V ratios and for samples grown under a high group-III regime, phase-segregation in the alloy was evident from a characteristic splitting of the AlGaN (0002) peak in the HR-XRD pattern. With decreasing excess group-III conditions the separation of peak positions continuously reduced, till a single peak was observed. However, for samples where such splitting was absent, spontaneous superlattice peaks were seen at lower incident angles of the XRD patterns indicating the presence of long-range atomic ordering (LRAO). Thus, for AlGaN alloys with extremely high Al content, effects of phase-segregation, or of LRAO were observed, depending on the kinetics of growth. These results on phase-segregation effects are expected to promote the development of high-efficiency deep ultraviolet emitters for skin-safe germicidal action by mitigating the detrimental effect of dislocations and related non-radiative recombination centers through carrier localization processes at potential minima.

Ultra-low threshold deep ultraviolet generation in a hollow-core fiber.

Tunable ultrashort pulses in the ultraviolet spectral region are in great demand for a wide range of applications, including spectroscopy and pump-probe experiments. While laser sources capable of producing such pulses exist, they are typically very complex. Notably, resonant dispersive-wave (RDW) emission has emerged as a simple technique for generating such pulses. However, the required pulse energy used to drive the RDW emission, so far, is mostly at the microjoule level, requiring complicated and expensive pump sources. Here, we present our work on lowering the pump energy threshold for generating tuneable deep ultraviolet pulses to the level of tens of nanojoules. We fabricated a record small-core antiresonant fiber with a hollow-core diameter of just 6 μm. When filled with argon, the small mode area enables higher-order soliton propagation and deep ultraviolet (220 to 270 nm) RDW emission from 36 fs pump pulses at 515 nm with the lowest pump energy reported to date (tens of nanojoules). This approach will allow the use of low-cost and compact laser oscillators to drive nonlinear optics in gas-filled fibers for the first time to our knowledge.

Dual‐Functional Triangular‐Shape Micro‐Size Light‐Emitting and Detecting Diode for On‐Chip Optical Communication in the Deep Ultraviolet Band

AbstractLight‐emitting diodes and photodiodes, often acting as transmitters and receivers, are two key optical components for constructing an optical communication system. Recently, solar‐blind optical wireless communication (SB‐OWC) has emerged as a promising free‐space communication platform due to its unique advantages, including low background noise, high security, and non‐line‐of‐sight ability. However, the development of deep ultraviolet (DUV) emitters and detectors is still in its early stages with relatively low efficiency and poor detection capability, which hampers the further progress of SB‐OWC. Herein, a triangular‐shaped micro‐sized diode (T‐μ‐diode) is reported that can significantly boost its DUV emission and detection performance compared with a regular circular‐shaped micro‐diode (C‐μ‐diode) due to improved current injection and enhanced light extraction/absorption behavior. Specifically, the T‐μ‐diodes demonstrate superior light output power with a −3 dB modulation bandwidth over 566 MHz operating at an extremely high current density of 2 kA cm−2 while possessing a higher photo‐responsivity of ≈160 mA W−1 with a faster response speed of 5.1 ns, surpassing the traditional C‐μ‐diodes in both light emitting and detecting modes. Importantly, a bidirectional on‐chip data transmission system is realized by simply switching the operation mode of two T‐μ‐diodes monolithically fabricated on the same platform with boosted emission and detection functionalities.

Enhanced deep ultraviolet light emission from AlGaN based nanowire with bowtie antenna array

The performance of conventional AlGaN based deep ultraviolet nanostructure has been hindered by low light emission efficiency. In this study, we demonstrate that the integration of a plasmonic aluminum (Al) bowtie antenna array with a high AlN content AlGaN based nanowire can potentially achieve a 42% and 45% enhancement in light emission at 275 nm under transverse electric (TE) and transverse magnetic (TM) polarization excitation, respectively. This enhancement is realized by carefully optimizing the nanowire diameter, as well as the size and position of the Al bowtie antenna array. The optimized dimensions of the nanowire facilitate light emission enhancement at 275 nm through dielectric resonance. Moreover, the integrated nanowire/antenna array system further increases light emission efficiency by exploiting local surface plasmon resonances. This integrated system holds promise for designing nano-photonic devices with precisely controlled responses.

Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K

Radiative and nonradiative recombination processes are investigated in the temperature range from 10 to 500 K for AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire templates. Time‐integrated photoluminescence (PL) spectroscopy under selective excitation conditions demonstrates that the decrease in the radiative recombination efficiency with increasing temperature is one of the causes of the thermal droop in AlGaN‐based deep‐ultraviolet (DUV) light‐emitting diodes. Time‐resolved PL spectroscopy indicates that not only the decreasing nonradiative recombination lifetime but increasing radiative recombination lifetime with increasing temperature contributes to the thermal droop. The temperature dependence of the radiative recombination lifetime is discussed, revealing that luminescence linewidth is a valuable criterion for designing efficient AlGaN‐based DUV emitters.

Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission

A deep ultraviolet (DUV) laser diode is a compact and efficient semiconductor device that emits laser light in the deep ultraviolet range. Its unique properties make it suitable for a wide range of applications in fields such as manufacturing, research, and healthcare. In this research we propose two Al-graded Electron Blocking Layer (EBL) and quantum barriers (QBs) to improve the performance of AlGaN-based Deep UV-LDs. The electrical properties and optical properties of three structures containing conventional EBL, composition graded increased EBL, and liner graded increased of EBL and QBs were numerically investigated. It was found that the structure-C with linear graded increased EBL and QBs significantly improved the Optical Confinement Factor (OCF) 21%, gain 1600 cm-1, emission power 0.060 W, raised the carrier concentration in the MQWs region, enhanced the stimulated recombination rate and reduced the carrier leakage, of the laser diode (LDs). But at a 100-mA injection current, the threshold current and voltage were reduced to 43 mA and 5.00 V, valance barrier height 270 meV respectively. In compare to the conventional structure, introducing a graded design for both EBL and Quantum Barriers (QBs) with increased aluminum content significantly enhanced the performance of the laser diode (LD). This improvement is essential for advancing Deep Ultraviolet Laser Diodes (DUV-LD) technology.

Modal Phase-Matched Bound States in the Continuum for Enhancing Third Harmonic Generation of Deep Ultraviolet Emission.

Coherent deep ultraviolet (DUV) light sources are crucial for various applications such as nanolithography, biomedical imaging, and spectroscopy. DUV light sources can be generated by using conventional nonlinear optical crystals (NLOs). However, NLOs are limited by their bulky size, inadequate transparency at the DUV regime, and stringent phase-matching requirements for harmonic generation. Recently, dielectric metasurfaces support high Q-factor resonances and offer a promising approach for efficient harmonic generation at short wavelengths. In this study, we demonstrated a crystalline silicon (c-Si) metasurface simultaneously exciting modal phase-matched bound states in the continuum (BIC) resonance at the fundamental wavelength of 840 nm with a higher degree of freedom for precise control of the BIC resonance and a plasmonic resonance at the wavelength of 280 nm in the DUV to enhance third harmonic generation (THG). We experimentally achieved a Q-factor of ∼180 owing to the relatively large refractive index of the c-Si and the geometric symmetry breaking of the structure. We realized THG at a wavelength of 280 nm with a power of 14.5 nW by using a peak power density of 15 GW/cm2 excitation. The measured THG power is 14 times higher than the state-of-the-art THG dielectric metasurfaces using the same peak power density in the DUV regime, and the maximum obtained THG power enhancement factor is up to 48. This approach relies on the significant third-order nonlinear susceptibility of c-Si, the interband plasmonic nature of the c-Si in the DUV, and the strong field confinement of BIC resonance to boost overall nonlinear conversion efficiency to 5.2 × 10-6% in the DUV regime. Our work shows the potential of c-Si BIC metasurfaces for developing efficient and ultracompact DUV light sources using high-efficacy nonlinear optical devices.

Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets.

Gallium nitride (GaN) exhibits various potential applications in optics and optoelectronics due to its outstanding physical characteristics, including a wide direct bandgap, strong deep-ultraviolet emission, and excellent electron transport properties. However, research on the piezoelectric and related properties of GaN nanosheets are scarce, as previous small-scale GaN investigations have mainly concentrated on nanowires and nanotubes. Here, we report a strategy for growing 2D GaN nanosheets using chemical vapor deposition on Ga/W liquid-phase substrates. Additionally, utilizing scanning probe techniques, it has been observed that 700 nm-thick GaN nanosheets demonstrate a piezoelectric constant of deff33 = 1.53 ± 0.21 pm V-1 and possess the capability to effectively modulate the Schottky barrier. The piezoelectric characteristics of 2D GaN are offering new options for innovative applications in various fields, including energy harvesting, electronics, sensing, and communications.

(Invited) Growth of Hexagonal Boron Nitride by MOCVD for Electronic and Photonic Applications

Hexagonal boron nitride (h-BN) is a 2-dimensional (2D) layered insulating material. Thanks to its wide bandgap of ~6 eV and high thermal conductivity, h-BN has been widely utilized as an ideal substrate, gate dielectric material, passivation layer, and atomic tunnelling layer for 2D electronic devices. Recently, it has gained more attention as active material for photonics applications due to its potential for stable quantum emitters in the visible spectral range, as well as deep-ultraviolet emitters and detectors due to its exceptionally high internal quantum efficiency despite its indirect bandgap. However, mechanically exfoliated bulk h-BN and h-BN films grown on catalytic metal substrates by conventional chemical vapor deposition (CVD) systems have been mainly used to study the fundamental properties, lacking in scalability for practical implementation of h-BN.Here, we exploit the scalable approach to grow h-BN on various substrates such as sapphire, Si, and GaN, by using metal-organic chemical vapor deposition (MOCVD). A few-layer h-BN films were successfully grown on those substrates. In particular, we successfully accomplished the conformal growth of few-layer h-BN over an array of Si-based nanotrenches with 45 nm pitch and the aspect ratio of ~ 7:1. Moreover, it was found that at a specific MOCVD growth condition, a very unique h-BN film can be grown on GaN substrates, in which few-layer h-BN film is suspended on GaN nanoneedles. The combination of state-of-the-art microscopic and spectroscopic analyses revealed that the suspended h-BN films exhibit unprecedented deep ultraviolet photoluminescence spectra with local variation in band-edge emission. In addition, the h-BN films show unprecedented atomic stacking configuration, the mechanism of which will be discussed with optical and structural characterizations and theoretical calculations.

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown On Ultrathin Step-bunched AlN Templates

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown On Ultrathin Step-bunched AlN Templates

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

To date, it has remained challenging to achieve N-polar AlN, which is of great importance for high power, high frequency, and high temperature electronics, acoustic resonators and filters, ultraviolet (UV) optoelectronics, and integrated photonics. Here, we performed a detailed study of the molecular beam epitaxy and characterization of N-polar AlN on C-face 4H-SiC substrates. The N-polar AlN films grown under optimized conditions exhibit an atomically smooth surface and strong excitonic emission in the deep UV with luminescence efficiency exceeding 50% at room temperature. Detailed scanning transmission electron microscopy (STEM) studies suggest that most dislocations are terminated/annihilated within ∼200 nm AlN grown directly on the SiC substrate due to the relatively small (1%) lattice mismatch between AlN and SiC. The strain distribution of AlN is further analyzed by STEM and micro-Raman spectroscopy, and its impact on the temperature-dependent deep UV emission is elucidated.

Luminescence Properties of the Hexagonal Boron Nitride Epilayer

AbstractAs an emerging 2D ultrawide bandgap semiconductor, hexagonal boron nitride (h‐BN) is gaining significant attention for its superior properties and wide applications. Although optical properties of h‐BN have been partially revealed by using h‐BN bulk single crystal, luminescence properties of the h‐BN few‐layer are rare due to its poor crystallinity. In this work, the h‐BN epilayers have been synthesized on sapphire substrates by the submicron‐spacing vapor deposition method. The crystalline quality of the h‐BN epilayer is improved with the increase of the growth temperature, and the full width at half‐maximum of the Raman peak is only ≈13 cm−1. The low temperature cathodoluminescence spectra of h‐BN epilayers exhibit two strong deep ultraviolet (DUV) luminescence peaks at 5.49 and 5.35 eV, as well as a weaker and broader defect‐related emission band at ≈4.0 eV. The DUV emission band is ascribed to the recombination of bound excitons and its phonon replica. Based on the theoretically predicted energy levels, the 4.0 eV emission band is tentatively attributed to the radiative transition from C impurities occupying the B sites to the B vacancies. Moreover, the h‐BN‐based DUV photodetectors exhibit an outstanding performance, making it a promising prospect for optoelectronic applications.

Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment

High-quality AlGaN-based film is the key to attain efficient deep ultraviolet emitters. In this study, we developed a silane-pretreatment method to modulate the growth mode of n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template (HTA-AlN) and improve the crystalline quality. It’s found that pretreating the surface of HTA-AlN template by SiH4 could disturb the pseudo-crystal epitaxy of n-Al0.6Ga0.4N and prompt the 3D growth at the AlGaN/AlN interface. The stress of n-Al0.6Ga0.4N was thus released rapidly by fresh-born dislocations. During the following growth, the growth mode of n-Al0.6Ga0.4N with SiH4-pretreatment transformed quickly from 3D to 2D, and the stress was released gradually because of the dislocation inclination. Besides, the threading dislocation density of 6 µm-thick n-Al0.6Ga0.4N with SiH4-pretreatment was reduced to 8.6 × 108 cm−2, which was one third of that without SiH4-pretreatments. This work paves the way for preparation and improvement of the DUV emitters.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives.

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Deep ultraviolet spontaneous emission enhanced by layer dependent black phosphorus plasmonics.

Although graphene has been the primary material of interest recently for spontaneous emission engineering through the Purcell effect, it features isotropic and thickness-independent optical properties. In contrast, the optical properties of black Phosphorus (BP) are in-plane anisotropic; which supports plasmonic modes and are thickness-dependent, offering an additional degree of freedom for control. Here we investigate how the anisotropy and thickness of BP affect spontaneous emission from a Hydrogenic emitter. We find that the spontaneous emission enhancement rate i.e. Purcell factor (PF) depends on emitter orientation, and PF at a particular frequency and distance can be controlled by BP thickness. At lower frequencies, PF increases with increasing thickness due to infrared (IR) plasmons, which then enhances visible and UV far-field spectra, even at energies greater than 10 eV. By leveraging the thickness and distance-dependent PF, deep UV emission can be switched between 103 nm or 122 nm wavelength from a Hydrogenic emitter. Additionally, we find that doping can significantly tune the PF near BP and this alteration depends on the thickness of the BP. Our work shows that BP is a promising platform for studying strong plasmon-induced light-matter interactions tunable by varying doping levels, emitter orientation, and thickness.

Phonon-assisted broadening in Bernal boron nitride: A comparison between indirect and direct excitons

We study the deep-ultraviolet emission in Bernal boron nitride as a function of temperature. The quasidegeneracy of indirect and direct excitons in Bernal boron nitride leads to their simultaneous recombination, allowing a comparison of phonon-assisted broadening in the two cases. Temperature-dependent measurements reveal that below 200 K, the efficiency of phonon-assisted broadening is one order of magnitude lower for the direct transition at 6.035 eV than for the phonon replicas of the indirect exciton. This striking effect results from the inhibition of quasielastic acoustic phonon scattering in the strong-coupling regime of the light-matter interaction, where the density of final states is reduced by the curvature of the polaritonic dispersion.

Polytypes of sp2-Bonded Boron Nitride

The sp2-bonded layered compound boron nitride (BN) exists in more than a handful of different polytypes (i.e., different layer stacking sequences) with similar formation energies, which makes obtaining a pure monotype of single crystals extremely tricky. The co-existence of polytypes in a similar crystal leads to the formation of many interfaces and structural defects having a deleterious influence on the internal quantum efficiency of the light emission and on charge carrier mobility. However, despite this, lasing operation was reported at 215 nm, which has shifted interest in sp2-bonded BN from basic science laboratories to optoelectronic and electrical device applications. Here, we describe some of the known physical properties of a variety of BN polytypes and their performances for deep ultraviolet emission in the specific case of second harmonic generation of light.