Tin(II) containing phosphates, ${\mathrm{Sn}}_{n}{\mathrm{P}}_{2}{\mathrm{O}}_{5+n}$ ($n$ is an integer), are promising candidates for $p$-type transparent conductors due to their good stability, suitable band gaps, and reasonable hole effective masses. Here we conduct first-principles calculations on ${\mathrm{Sn}}_{n}{\mathrm{P}}_{2}{\mathrm{O}}_{5+n}$ type compounds by exploring their defect properties along with the dopability to find better candidates for $p$-type transparent conducting oxides. We consider two compounds, ${\mathrm{Sn}}_{3}{\mathrm{P}}_{2}{\mathrm{O}}_{8}$ ($n=3$) and ${\mathrm{Sn}}_{5}{\mathrm{P}}_{2}{\mathrm{O}}_{10}$ ($n=5$), with their binary counterpart SnO for a thorough comparison. Various likely native defects, as well as possible hydrogen-related extrinsic impurities have been examined. In ${\mathrm{Sn}}_{n}{\mathrm{P}}_{2}{\mathrm{O}}_{5+n}$, Sn interstitial and Sn vacancy are the dominant donor and acceptor defects. In contrast to SnO, Sn vacancies have quite deep charge transition levels in ${\mathrm{Sn}}_{n}{\mathrm{P}}_{2}{\mathrm{O}}_{5+n}$. The results indicate that both the studied phosphates are not good $p$-type transparent conductors even at the optimal growth conditions. However, our findings suggest that ${\mathrm{Sn}}_{n}{\mathrm{P}}_{2}{\mathrm{O}}_{5+n}$ with a higher $n$ would allow for a relatively higher hole concentration and a shallow-level defect for Sn vacancy, thus calling future research in this direction.