Dead-time Losses Research Articles

A Monte Carlo study comparing dead-time losses of a gamma camera between tungsten functional paper and lead sheet for dosimetry in targeted radionuclide therapy with Lu-177.

Dead-time loss is reported to be non-negligible for some patients with a high tumor burden in Lu-177 radionuclide therapy, even if the administered activity is 7.4GBq. Hence, we proposed a simple method to shorten the apparent dead time and reduce dead-time loss using a thin lead sheet in previous work. The collimator surface of the gamma camera was covered with a lead sheet in our proposed method. While allowing the detection of 208-keV gamma photons of Lu-177 that penetrate the sheet, photons with energies lower than 208keV, which cause dead-time loss, were shielded. In this study, we evaluated the usefulness of tungsten functional paper (TFP) for the proposed method using Monte Carlo simulation. The count rates in imaging of Lu-177 administered to patients were simulated with the International Commission on Radiological Protection (ICRP) 110 phantom using the GATE Monte Carlo simulation toolkit. The simulated gamma cameras with a 0.5-mm lead sheet, 1.2-mm TFP, or no filter were positioned closely on the anterior and posterior sides of the phantom. The apparent dead times and dead-time losses at 24h after administration were calculated for an energy window of 208keV ± 10%. Moreover, the dead-time losses at 24-120h were analytically assessed using activity excretion data of Lu-177-DOTATATE. The dead-time loss without a filter was 5% even 120h after administration in patients with a high tumor burden and slow excretion, while those with a lead sheet and TFP were 0.22 and 0.58 times less than those with no filter, respectively. The count rates with the TFP were 1.3 times higher than those with the lead sheet, and the TFP could maintain primary count rates at 91-94% of those without a filter. Although the apparent dead time and dead-time loss with the lead sheet were shorter and less than those with TFP, those with TFP were superior to those without a filter. The advantage of TFP over the lead sheet is that the decrease in primary count rates was less.

Contrast and quantum noise in single-exposure dual-energy thoracic imaging with photon-counting x-ray detectors

Objective.Photon-counting x-ray detectors (PCDs) can produce dual-energy (DE) x-ray images of lung cancer in a single x-ray exposure. It is important to understand the factors that affect contrast, noise and the contrast-to-noise ratio (CNR). This study quantifies the dependence of CNR on tube voltage, energy threshold and patient thickness in single exposure, DE, bone-suppressed thoracic imaging with PCDs, and elucidates how the fundamental processes inherent in x-ray detection by PCDs contribute to CNR degradation.Approach.We modeled the DE CNR for five theoretical PCDs, ranging from an ideal PCD that detects every primary photon in the correct energy bin while rejecting all scattered radiation to a non-ideal PCD that suffers from charge-sharing and electronic noise, and detects scatter. CNR was computed as a function of tube voltage and high energy threshold for average and larger-than-average patients. Model predictions were compared with experimental data extracted from images acquired using a cadmium telluride (CdTe) PCD with two energy bins and analog charge summing for charge-sharing suppression. The imaging phantom simulated attenuation, scatter and contrast in lung nodule imaging. We quantified CNR improvements achievable with anti-correlated noise reduction (ACNR) and measured the range of exposure rates over which pulse pile-up is negligible.Main Results.The realistic model predicted overall trends observed in the experimental data. CNR improvements with ACNR were approximately five-fold, and modeled CNR-enhancements were on average within 10% of experiment. CNR increased modestly (i.e.<20%) when increasing the tube voltage from 90 kV to 130 kV. Optimal energy thresholds ranged from 50 keV to 70 keV across all tube voltages and patient thicknesses with and without ACNR. Quantum efficiency, electronic noise, charge sharing and scatter degraded CNR by ~50%. Charge sharing and scatter had the largest effect on CNR, degrading it by ~30% and ~15% respectively. Dead-time losses were less than 5% for patient exposure rates within the range of clinical exposure rates.Significance.In this study, we (1) employed analytical and computational models to assess the impact of different factors on CNR in single-exposure DE imaging with PCDs, (2) evaluated the accuracy of these models in predicting experimental trends, (3) quantified improvements in CNR achievable through ACNR and (4) determined the range of patient exposure rates at which pulse pile-up can be considered negligible. To the best of our knowledge, this study represents the first systematic investigation of single-exposure DE imaging of lung nodules with PCDs.

Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison

This paper investigates the commutation transients of MOSFET and GaN FET devices in motor drive applications during hard-switching and soft-switching commutations at dead time operation. This study compares the switching behaviors of MOSFETs and GaN FETs, focusing on their performance during dead time in inverter legs for voltage source inverters. Experimental tests at various phase current levels reveal distinct switching characteristics and energy dissipation patterns. A validated simulation model estimates the experimental energy exchanged and dissipated during switching transients. The results demonstrate that GaN FETs exhibit lower overall losses at shorter dead times compared to MOSFETs, despite higher reverse conduction voltage drops. The study provides a quantitative framework for selecting optimal dead times to minimize energy losses, enhancing the efficiency of GaN FET-based inverters in low-voltage motor drive applications. Finally, a dead time optimization strategy is proposed and described.

Improving model-data mismatch for photon-counting detector model using global and local model parameters.

An energy-discriminating capability of a photon counting detector (PCD) can provide many clinical advantages, but several factors, such as charge sharing (CS) and pulse pileup (PP), degrade the capability by distorting the measured x-ray spectrum. To fully exploit the merits of PCDs, it is important to characterize the output of PCDs. Previously proposed PCD output models showed decent agreement with physical PCDs; however, there were still scopes to be improved: a global model-data mismatch and pixel-to-pixel variations. In this study, we improve a PCD model by using count-rate-dependent model parameters to address the issues and evaluate agreement against physical PCDs. The proposed model is based on the cascaded model, and we made model parameters condition-dependent and pixel-specific to deal with the global model-data mismatch and the pixel-to-pixel variation. The parameters are determined by a procedure for model parameter estimation with data acquired from different thicknesses of water or aluminum at different x-ray tube currents. To analyze the effects of having proposed model parameters, we compared three setups of our model: a model with default parameters, a model with global parameters, and a model with global-and-local parameters. For experimental validation, we used CdZnTe-based PCDs, and assessed the performance of the models by calculating the mean absolute percentage errors (MAPEs) between the model outputs and the actual measurements from low count-rates to high count-rates, which have deadtime losses of up to 24%. The outputs of the proposed model visually matched well with the PCD measurements for all test data. For the test data, the MAPEs averaged over all the bins were 49.2-51.1% for a model with default parameters, 8.0-9.8% for a model with the global parameters, and 1.2-2.7% for a model with the global-and-local parameters. The proposed model can estimate the outputs of physical PCDs with high accuracy from low to high count-rates. We expect that our model will be actively utilized in applications where the pixel-by-pixel accuracy of a PCD model is important.

Measurements in pulsed neutron fields.

Dosimetry in pulsed and mixed radiation fields represents an important challenge in radiation measurements, because in several accelerator technologies, the acceleration occurs in bunches of particles with short time duration, producing intense radiation pulses spaced by a relatively long time of beam off. The stray mixed radiation field generated around these installations maintains the same time structure as the primary beam and causes a problem in workplace fields' monitoring. Active neutron detectors normally used in steady neutron fields, specifically REM-counters and Bonner sphere spectrometers, can suffer pulsed fields because of the high dead time losses during the bursts and are often inadequate for pulsed field monitoring. This work reviews the efforts of European Radiation Dosimetry Group (EURADOS), and in particular of the Working Group 11 'High Energy Radiation Fields', to define the problem, characterize instrumentation and to propose solutions to the issue of pulsed and mixed radiation fields. Despite the EURADOS initiative, several open issues still remain. A metrological traceability for pulsed neutron fields is missing. There is still room for the optimization and better characterization of available instruments. Initiatives of education and training are required.

Design Considerations of Multi-Phase Buck DC-DC Converter

The main objective of this article is to propose a rational methodology for designing multi-phase step-down DC-DC converters, which can find applications both in engineering practice and in power electronics education. This study discusses the main types of losses in the multi-phase synchronous buck converter circuit (transistors’ conduction losses, high-side MOSFET’s switching losses, reverse recovery losses in the body diode, dead time losses, output capacitance losses in the MOSFETs, gate charge losses in MOSFETs, conduction losses in the inductor, and losses in the input and output capacitors) and provides analytical dependencies for their calculation. Based on the control examples for applications characterized by low voltage and high output current, the multi-phase buck converter’s output and input current ripples are analyzed and compared analytically and graphically (3D plots). Furthermore, graphical results of the converter efficiency at different numbers of phases (N = 2, 4, 6, 8, and 12) are presented. An analysis of the impact of various parameters on power losses is conducted. Thus, a discussion on assessing the factors influencing the selection of the number of phases in the multi-phase synchronous buck converter is presented. The proposed systematized approach, which offers a fast and accurate method for calculating power losses and overall converter efficiency, reduces the need for extensive preliminary computational procedures and achieves optimized solutions. Simulation results for investigating power losses in 8-phase multi-phase synchronous buck converters are also presented. The relative error between analytical and simulation results does not exceed 4%.

SPHIRD–Single Photon Counting Pixel Readout ASIC With Pulse Pile-Up Compensation Methods

This paper presents the design and measurement results of a prototype SPHIRD-1 ASIC in the CMOS 40 nm process. The chip is dedicated to high count rate single photon counting operation at the European Synchrotron Radiation Facility with Extremely Brilliant Source. The core of the prototype IC is the matrix of 64 32 pixels of 50 μm pitch. Each pixel contains a Charge Sensitive Amplifier (CSA) with a fast discharge block and a detector leakage current compensation circuit. The CSA is connected to a set of three discriminators. The readout channel is equipped with additional circuits, which provide different pulse pile-up compensation methods. The priority of the analog front-end electronics is to process the input signal in a short time (the CSA output pulse time width is only 18 ns) and to keep low noise (the equivalent noise charge at the level of 188 el. rms) with a power consumption equals to 26 μW/pixel. The chip is optimized for operation with a monochromatic X-ray beam with an energy of up to 30 keV. The measurements prove the possibility of counting up to 11.5 Gcps/mm2 based on a 10% dead time loss input rate parameter.

Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-ON Switching Transients Modeling of High-Voltage SiC MOSFETs

This paper presents a discrete and real-time capable dynamic behavioural model of the turn-on switching transition of high-voltage and high-current Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) half-bridge power modules. The dynamic switching model utilizes the Shichman and Hodges equations using voltage-dependent non-linear device capacitances and module electrical parameters to obtain an accurate dynamic model of the device switching transients. The key device states gate-source voltage, drain current and drain-source voltage are modelled. The paper investigates the impact of correct device capacitance modelling with low off-state gate-source voltage values, impacting the device capacitances and causes gate-voltage hysteresis effects. It has been shown that the presented discrete-time dynamic switching model accurately describes the turn-on transient and the results highlight the importance of correct capacitance and threshold voltage characterization data. The modelling results are compared to experimental measurements conducted in a 3.3 kV/750 A SiC MOSFET power module. The model exhibits an average accuracy of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim 4\%$</tex-math></inline-formula> for turn-on energy and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim 1.3\%$</tex-math></inline-formula> for the turn-on time compared to measurements. These models are valuable for rapid and cost effective design and validation of advanced gate-driver circuits and for determining key design and operating parameters such as deadtime, switching frequency and switching losses.

Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs

This article presents a real-time field-programmable gate array (FPGA)-based dynamic model of high-voltage and high-current silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> ) half-bridge power modules. The dynamic switching model utilizes the Shichman and Hodges equations using voltage-dependent nonlinear device capacitances and module electrical parameters to obtain an accurate dynamic model of the device switching transients. The key device states gate-source voltage, drain current, and drain-source voltage are modeled and discretized using forward Euler discrete integration method. Analysis of synthesizing the discrete-time model into real-time FPGA-based system with real-time data output from the on-board digital-to-analog converter is presented in detail. The model is utilized in modeling a 320-kW, medium-voltage dc/dc dual-active bridge converter and verified using dynamic experimental results from a 3.3-kV SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> half-bridge power module. It has been shown that the presented discrete-time dynamic switching model accurately describes the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> switching transients of the SiC power module at various voltage and current levels. Such models are useful for rapid and cost effective design and prototyping of SiC-based power electronic systems by defining key design and operating parameters, such as deadtime, switching frequency, and switching losses.

Medical gamma cameras in radiological emergency preparedness: determination of calibration factors and MDA for the GE Discovery NM/CT 670 Pro

A survey was performed of the available gamma camera models and whole-body counters (WBCs) in Sweden, revealing that there are about 75 gamma cameras and 15 WBCs currently in operation in Sweden. One of the most common gamma camera models (GE Discovery NM/CT 670 Pro), with the collimators removed, was calibrated for 152Eu, 137Cs, 60Co and 40K in three different measurement geometries (supine, close-up sitting and distant sitting) for six different phantom sizes (12–110 kg). Minimum detectable activities (MDAs) were calculated for the gamma camera and a typical WBC, both at the Sahlgrenska University Hospital in Gothenburg, Sweden. An energy window of 30–510 keV was used to calibrate the gamma camera. The calibration factors for this gamma camera for supine and close-up sitting geometry, including all phantom sizes, were 138–208 cps kBq−1 for 152Eu, 63–83 cps kBq−1 for 137Cs and 99–126 cps kBq−1 for 60Co; the MDAs were 50–73 Bq for 152Eu, 125–198 Bq for 137Cs and 83–105 Bq for 60Co. The International Commission on Radiological Protection dose coefficients for members of the public were used to calculate the committed effective doses (CEDs) corresponding to the MDAs, showing that CEDs down to a few μSv can be estimated with this gamma camera for the inhalation of aerosols of absorption type M. The distant sitting geometry was used to enable the estimation of higher contamination levels, and a hypothetical maximum CED was calculated. This was shown to be 256–2000 mSv, depending on the radionuclide and phantom size. However, further investigations are needed into the dead time losses for higher activity levels for the radionuclides studied. The results show that the use of gamma cameras for radiological triage and, in some cases, to estimate the internal activity of relevant radionuclides in radiological and nuclear events, is feasible.

Analysis of Dead-Time Energy Loss in GaN-Based TCM Converters With an Improved GaN HEMT Model

For gallium nitride (GaN) based triangular current mode (TCM) applications, the dead-time has a significant effect on the switching loss. However, previous GaN high electron mobility transistor (HEMT) models focus on the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on/off</small> process without fully considering the effect of the dead-time. Hence, this article analyzes the switching transients under the superfluous and insufficient dead-time and evaluates the dead-time loss with an improved GaN HEMT model. The proposed model improves an existing GaN HEMT model by adding the voltage rising/falling time of the gate driver, the dynamic threshold voltage of Schottky-type GaN HEMTs, and an equivalent gate-drain capacitance obtained from the datasheet. Verified by a GaN-based double-pulse test, the proposed model can more accurately calculate the gate-source voltage and the self-commutated reverse conduction voltage. Verified by a GaN-based TCM Buck converter, the proposed model can predict the dead-time loss well and has higher simulation accuracy for the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> process induced by the inappropriate dead-time.

Adaptive Dead-Time Control Design with Low Dead-Time Error in 20 MHz 90 V GaN Gate Driver

This paper presents an adaptive dead-time control circuit for a maximum work frequency 20 MHz, maximum voltage level 90 V GaN gate driver. The dead-time is set to prevent straight-through of the upper and lower power transistors of the bridge arm structure and ensure the reliability of the motor driver. For GaN drivers on the market today, fixed or configurable dead-time is widely used in more-than-10 MHz application scenarios. However, the switching loss caused by insufficient dead-time and reverse turn-on loss caused by excessive dead-time of GaN devices have a hazardous influence on the efficiency of drivers, which fixed or configurable dead-time cannot avoid. The gate driver with the proposed adaptive dead-time control circuit has been implemented in a 0.18 um BCD process. The proposed adaptive control circuit dissipates 56.3 uA quiescent current in a simulation situation and is able to provide maximum 5 ns dead-time error for a GaN gate driver.

Perovskite CsPbBr3 Single Crystal Detector for High Flux X-Ray Photon Counting.

X-ray photon-counting detectors capable of resolving the energies of single X-ray photons are critical in medical imaging, and a high count rate is essential for photon-counting detectors. Here, we report the performance of the perovskite CsPbBr3 single-crystal semiconductor detector for X-ray photon counting. The CsPbBr3 detector noise floor, energy response linearity, energy resolution, count rate, and polarization were evaluated. By fine-tuning the detector working conditions, our CsPbBr3 detector with a planar electrode can count an incident X-ray photon rate of ~0.099 and ~0.336 Mcps/pixel at 10% and 30% deadtime loss, respectively, with corresponding energy resolutions of ~18% at 59.5 keV and ~12% at 122 keV at same pulse processing conditions. We also demonstrated that our CsPbBr3 detectors show negligible polarization under an X-ray flux of ~0.45 M photons/s/mm2 for the typical timescale of multiple clinical X-ray scans, such as 1 s- 100 s. Our evaluation demonstrates the high potential of CsPbBr3 detectors for X-ray photon-counting applications in medical and industrial diagnostics with a lower cost than the current state-of-the-art.

Effective Dead Time of Two Non-Paralyzable Detector Components in Series

Detector dead time losses, caused by both physical components in the detection system and the electronic data acquisition system, are perhaps the most prominent effect in non-ideal detector behavior. Most mathematical modeling methods consider the detector as a single unit with a single dead time parameter, while a true physical detector is often comprised of several serially connected components, each suffering from independent dead time losses. In this study, we develop new formulas for evaluating the dead time losses in a detection system with two serially connected components, each component with a non paralyzing dead time, while assuming that the original count rate has a Poisson distribution. The analytic results obtained are first compared with numeric simulations (showing a very good correspondence) and are then used for numeric investigation of global boundaries of the dead time effect in serially connected systems.

Model-based pulse pileup and charge sharing compensation for photon counting detectors: A simulation study.

PurposeWe aim at developing a model‐based algorithm that compensates for the effect of both pulse pileup (PP) and charge sharing (CS) and evaluates the performance using computer simulations.MethodsThe proposed PCP algorithm for PP and CS compensation uses cascaded models for CS and PP we previously developed, maximizes Poisson log‐likelihood, and uses an efficient three‐step exhaustive search. For comparison, we also developed an LCP algorithm that combines models for a loss of counts (LCs) and CS. Two types of computer simulations, slab‐ and computed tomography (CT)‐based, were performed to assess the performance of both PCP and LCP with 200 and 800 mA, (300 µm)2 × 1.6‐mm cadmium telluride detector, and a dead‐time of 23 ns. A slab‐based assessment used a pair of adipose and iodine with different thicknesses, attenuated X‐rays, and assessed the bias and noise of the outputs from one detector pixel; a CT‐based assessment simulated a chest/cardiac scan and a head‐and‐neck scan using 3D phantom and noisy cone‐beam projections.ResultsWith the slab simulation, the PCP had little or no biases when the expected counts were sufficiently large, even though a probability of count loss (PCL) due to dead‐time loss or PP was as high as 0.8. In contrast, the LCP had significant biases (>±2 cm of adipose) when the PCL was higher than 0.15. Biases were present with both PCP and LCP when the expected counts were less than 10–120 per datum, which was attributed to the fact that the maximum likelihood did not approach the asymptote. The noise of PCP was within 8% from the Cramér–Rao lower bounds for most cases when no significant bias was present. The two CT studies essentially agreed with the slab simulation study. PCP had little or no biases in the estimated basis line integrals, reconstructed basis density maps, and synthesized monoenergetic CT images. But the LCP had significant biases in basis line integrals when X‐ray beams passed through lungs and near the body and neck contours, where the PCLs were above 0.15. As a consequence, basis density maps and monoenergetic CT images obtained by LCP had biases throughout the imaged space.ConclusionWe have developed the PCP algorithm that uses the PP–CS model. When the expected counts are more than 10–120 per datum, the PCP algorithm is statistically efficient and successfully compensates for the effect of the spectral distortion due to both PP and CS providing little or no biases in basis line integrals, basis density maps, and monoenergetic CT images regardless of count‐rates. In contrast, the LCP algorithm, which models an LC due to pileup, produces severe biases when incident count‐rates are high and the PCL is 0.15 or higher.

A High-Efficiency Dynamic Inverter Dead-Time Adjustment Method Based on an Improved GaN HEMTs Switching Model

Benefited from the fast switching speed, Gallium nitride (GaN) high electron mobility transistors (HEMTs) have been widely used in high switching frequency converters. However, due to the significant correlation between the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> time and operating conditions (more than 20 times difference of the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> time between the high load current and small load current for GaN HEMTs), using a fixed dead time will introduce extra dead-time (DT) losses in inverters where the output voltage and current are constantly varying. Therefore, this article proposes a high-efficiency adaptive method to dynamically adjust the GaN-inverter DT with operating conditions. An improved transient model including the parasitic inductance and output voltage with bidirectional solution flow has been proposed for GaN HEMTs to increase the accuracy of DT adjustment. Based on this model, the dynamic DT adjustment can be realized without extra sensors for GaN-inverters. Using the dynamic DT adjustment, the experimental results show a peak efficiency of 98.25% in a 1200 W inverter with triangular current mode modulation. Compared with using the fixed DT, the dynamic DT method can reduce the power loss by 26.7% under full load and 49.14% under light load.

Dead Time Optimization in a GaN-Based Buck Converter

A gallium nitride (GaN) field effect transistor can provide superior performance over a Si- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> due to its low <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> -state resistance and low junction capacitances. However, a GaN-based converter exhibits higher dead time loss during reverse conduction. Thus, to improve the efficiency, dead time optimization is required. This article proposes simple models for dead time optimization in a GaN-based buck converter under different load conditions. The proposed models are analytical in nature compared to the conventional models available for Si-based converters. A buck converter prototype is designed using a 100 V GaN device (GS61008P from GaN Systems) and the proposed analytical model-based dead time optimization techniques are validated experimentally. The proposed modeling techniques can be extended for other GaN-based dc–dc converters.

An Integrated Driver With Adaptive Dead-Time Control for GaN-Based Synchronous Buck Converter

This paper proposes a driver integrated circuit (IC) for a GaN-based synchronous buck converter to minimized the dead-time loss of GaN devices and improve converter efficiency. The proposed adaptive control achieves minimized dead-time for any loading condition. A driver IC is fabricated in a 0.18 lm BCD process to verify the concept. The measurement result achieves only 0.7 ns and 0.8 ns dead-time at the minimum and maximum load condition, respectively. The efficiency improves 2.1% at 2 A full load compared to the fixed dead-time control counterpart.

Analytical Model to Study Turn-OFF Soft Switching Dynamics of SiC MOSFET in a Half-Bridge Configuration

Switching transients of SiC MOSFET are fast compared to its Si counterpart. Fast switching transient reduces switching loss but may induce prolonged oscillations, spurious turn-on, high device stress, and electromagnetic interference (EMI)-related issues, etc. In soft switched converters, use of external drain source capacitance can reduce these adverse effects along with the reduction in switching loss. However, the selection of external drain source capacitance is not straightforward. A large external capacitance reduces switching loss, (dv/dt), (di/dt), and transient over-voltage but may also result in higher dead-time loss and reduced switching frequency. This article presents an analytical model that captures the soft turn-off switching dynamics of SiC MOSFET using parameters obtained from device datasheet along with the values of external circuit parasitics. Unlike linear approximation, a nonlinear channel current model is used along with a comprehensive model of transfer capacitance. The effect of external gate drain capacitance is also considered. This leads to a better estimation of switching transition time, actual loss, (dv/dt), (di/dt), and transient over voltage. Also, a method to select an optimal value of external drain source capacitance is presented. The proposed model is validated through behavioral simulation and experiment for two 1.2-kV discrete SiC MOSFETs.

Gamma camera characterization at high holmium-166 activity in liver radioembolization

BackgroundHigh activities of holmium-166 (166Ho)–labeled microspheres are used for therapeutic radioembolization, ideally directly followed by SPECT imaging for dosimetry purposes. The resulting high-count rate potentially impacts dead time, affecting the image quality and dosimetric accuracy. This study assesses gamma camera performance and SPECT image quality at high 166Ho activities of several GBq. To this purpose, the liver compartment, including two tumors, of an anthropomorphic phantom was filled with 166Ho-chloride, with a tumor to non-tumorous liver activity concentration ratio of 10:1. Multiple SPECT/CT scans were acquired over a range of activities up to 2.7 GBq. Images were reconstructed using a commercially available protocol incorporating attenuation and scatter correction. Dead time effects were assessed from the observed count rate in the photopeak (81 keV, 15% width) and upper scatter (118 keV, 12% width) window. Post reconstruction, each image was scaled with an individual conversion factor to match the known total activity in the phantom at scanning time. The resulting activity concentration was measured in the tumors and non-tumorous liver. The image quality as a function of activity was assessed by a visual check of the absence of artifacts by a nuclear medicine physician. The apparent lung shunt fraction (nonzero due to scatter) was estimated on planar and SPECT images.ResultsA 20% count loss due to dead time was observed around 0.7 GBq in the photopeak window. Independent of the count losses, the measured activity concentration was up to 100% of the real value for non-tumorous liver, when reconstructions were normalized to the known activity at scanning time. However, for tumor spheres, activity concentration recovery was ~80% at the lowest activity, decreasing with increasing activity in the phantom. Measured lung shunt fractions were relatively constant over the considered activity range.ConclusionsAt high 166Ho count rate, all images, visually assessed, presented no artifacts, even at considerable dead time losses. A quantitative evaluation revealed the possibility of reliable dosimetry within the healthy liver, as long as a post-reconstruction scaling to scanning activity is applied. Reliable tumor dosimetry, instead, remained hampered by the dead time.