Real-Time FPGA Simulation of High-Voltage Silicon Carbide MOSFETs

Abstract

This article presents a real-time field-programmable gate array (FPGA)-based dynamic model of high-voltage and high-current silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> ) half-bridge power modules. The dynamic switching model utilizes the Shichman and Hodges equations using voltage-dependent nonlinear device capacitances and module electrical parameters to obtain an accurate dynamic model of the device switching transients. The key device states gate-source voltage, drain current, and drain-source voltage are modeled and discretized using forward Euler discrete integration method. Analysis of synthesizing the discrete-time model into real-time FPGA-based system with real-time data output from the on-board digital-to-analog converter is presented in detail. The model is utilized in modeling a 320-kW, medium-voltage dc/dc dual-active bridge converter and verified using dynamic experimental results from a 3.3-kV SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> half-bridge power module. It has been shown that the presented discrete-time dynamic switching model accurately describes the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> switching transients of the SiC power module at various voltage and current levels. Such models are useful for rapid and cost effective design and prototyping of SiC-based power electronic systems by defining key design and operating parameters, such as deadtime, switching frequency, and switching losses.