Behavior Consideration of 1200 V SiC Half-Bridge Power Module under Various Dead-Time during Hard-Switching

Abstract

Silicon carbide (SiC) half-bridge power modules are used in different applications such as power converters, integrated vehicle systems, aviation, and actuation systems. It can be a challenge, to effectively choose the optimal dead-time during the hard-switching. Since the transistor has less conducting loss in comparison to the intrinsic body diode. Therefore, it is commonly replaced with the freewheeling diode with a high-or low-side transistor for synchronous converters. Therefore, it is important to select appropriate dead-time between the low-and high-side transistors in half-bridge power modules. The use of the intrinsic body diode as a free-wheeling diode or switch instead of that in the half-bridge configuration depends on many different factors such as efficiency, cost, and switching parameters of semiconductors. This paper analyzes the behavior of the SiC power module with switching parameters under different dead-time conditions. The behavioral analysis is experimentally implemented on a half-bridge SiC for a 1200V half-bridge BSM300D12P2E001 SiC power module.