Temperature Data Retention Research Articles

MOCVD $\hbox{Ge}_{3}\hbox{Sb}_{2}\hbox{Te}_{5}$ for PCM Applications

Phase-change memory devices fabricated using MOCVD-deposited 30% Ge, 20% Sb, and 50% Te atomic composition, GST325 alloy, are fully characterized. In 100-nm-size test devices, a more than 2x reduction of reset current and set resistance were demonstrated compared with equivalent devices using PVD-deposited GST225. The devices show set speeds of 175-260 ns and a ten-year data-retention temperature of 102°C, comparable with devices made using a PVD GST225 alloy. Cycle endurance of up to 7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> was also demonstrated.

Ge/Sb 2Te 3 nanocomposite multilayer films for high data retention phase-change random access memory application

The amorphous-to-crystalline transition of Ge/Sb 2Te 3 nanocomposite multilayer films with various thickness ratios of Ge to Sb 2Te 3 were investigated by utilizing in situ temperature-dependent film resistance measurements. The crystallization temperature and activation energy for the crystallization of the multilayer films increased with the increase in thickness ratio of Ge to Sb 2Te 3. The difference in sheet resistance between amorphous and crystalline states could reach as high as 10 4 Ω/□. The crystallization temperature and activation energy for the crystallization of Ge/Sb 2Te 3 nanocomposite multilayer films was proved to be larger than that of conventional Ge 2Sb 2Te 5 film, which ensures a better data retention for phase-change random access memory (PCRAM) use. A data retention temperature for 10 years of the amorphous state [Ge (2 nm)/Sb 2Te 3 (3 nm)] 40 film was estimated to be 165 °C. Transmission electron microscopy (TEM) images revealed that Ge/Sb 2Te 3 nanocomposite multilayer films had layered structures with clear interfaces.

E2Flash — all the memory on one chip

In many cases non-volatile memory is required for automotive applications. Users often try to emulate external EEPROM using the microcontroller's internal flash memory for commercial or technical reasons. This frequently fails due to the limited number of write/erase cycles, the restricted operating temperature range during the flashing procedure and due to inappropriate memory segmentation. Renesas presents a combination of code flash; this controller offers simultaneous writing and erasure during program code execution and meets exacting requirements for write/erase cycles, data retention and operating temperature range.