Current Voltage Research Articles

Strain and piezoelectric control of electronic and photonic properties of p − n diodes

Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in 20 out of the 32 three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III–V and II–VI materials of, typically, 50–100 meV in the presence of 1 % strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose p − n junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on p − n junction current–voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Surface and interface chemistry of bromine–methanol‐etched Cd0.9Zn0.1Te crystals

Chemical polishing or chemo‐mechanical polishing is crucial as a last step of surface preparation to remove the damaged layer and contaminants from the surface of CdZnTe crystals. The bromine–methanol solution is widely used for this purpose. However, bromine–methanol solution enriches the surface with Te and results in poor performance of CdZnTe crystals. In this study, the effect of the chemical polishing with 5% bromine–methanol solution on the surface and at the interface is investigated and it is demonstrated that etching duration strongly influences surface stoichiometry and interface contaminants. The evolution of the surface topography with etching and chemical changes are presented. It is shown that after 90 s etching/polishing, subsurface damage is removed and Te enrichment is minimum. Moreover, interface layer thickness is the smallest for 90 s etching duration. It is presented that further increase in the etching duration disturbs the surface stoichiometry and interface depth. It also calculated that 90 s of etching shows low interface barrier and symmetrical current–voltage curve.

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Estimation of bandwidth, voltage swing and DC coefficients for VLSI interconnects: current mode technique

ABSTRACT Necessity of bandwidth requires the effective use of it for high speed data transmission and faster read/write operation in memory cells. In this paper the transfer function expressions for RC interconnect line is presented for resistive load. The line delay, bandwidth and step response for current and voltage mode signalling is formulated. The current mode and voltage mode signalling provides the 3-dB bandwidth of 6.8 GHz and 3.1 GHz, respectively. An interconnect line modelled as either RLC or RC line depending upon input signal rise time, damping, and range of interconnect length with significant inductance effect is investigated for global interconnect lines. Low swing for column bit line in memory architectures is very important and estimated in terms of dc coefficients. For RC global interconnect of 10 mm, a swing of 0.382 V is obtained for current mode signalling, when a power supply of 1.8 V is applied to the network. DC coefficient and steady state value has been obtained which is significant for power computation on column bit line. It is also analytically validated by SPICE and MATLAB simulations.

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors.

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

A germanium p-channel Schottky barrier metal–oxide–semiconductor field-effect transistor (SB-MOSFET) with germanium–platinum Schottky contacts is demonstrated experimentally. The fabrication process has a low thermal budget of 450° C and requires neither intentional doping nor ion implantation. At a temperature of 4 K, the p-channel SB-MOSFET turns on at a gate voltage of −1.6 V and shows a peak mobility of 500 cm2/V s at a carrier density of 3 × 1012 cm–2. Under high drain–source bias voltages, the device operates in an unconventional mode where the current is limited by the source contact. Injection of carriers from the source contact to the germanium channel is controlled by the gate bias, which modulates the Schottky barrier capacitively. The transconductance in this mode deviates from and is significantly higher than the value expected for a conventional MOSFET with the same geometry, mobility, and capacitance. Based on four-point current–voltage measurements, we present a theoretical band diagram of the device and give a physical picture for the observed high currents and transconductances.

Small polaron hopping and tunneling transport in Maxwell–Wagner relaxation dominated Al2O3/TiO2 subnanometric laminates

Maxwell–Wagner relaxation dominated Al2O3/TiO2 nanolaminates (ATA NLs) have recently demonstrated their potential for high-density energy storage applications. In this report, we have unraveled the defect-mediated transport mechanisms prevailing in Al2O3/TiO2 sub-nanometric laminates. Temperature-dependent ac conductivity measurements revealed the signature of small polaron hopping in TiO2 active layers and trap-assisted tunneling transport through Al2O3 barrier layers, which was corroborated by resonant photoelectron spectroscopy and temperature-dependent current–voltage measurement. The polaronic defect states, found ∼1 eV below the Fermi level, served as the hopping centers and leakage paths for current. The signature of quantum tunneling transport and the negative differential conductance observed toward higher electric field was attributed to the splitting of delocalized minibands. These transport properties of Al2O3/TiO2 nanolaminates will help in tailoring these materials for next-generation storage capacitors.

Effect of Plasma Gas Type on the Operation Characteristics of a Three-Phase Plasma Reactor with Gliding Arc Discharge

Three-phase gliding arc discharge reactors are devices in which it is difficult to maintain stable plasma parameters, be it electrically, physically, or chemically. The main cause of plasma instability is the source, which is freely burning arcs in a three-phase system. In addition, these arcs burn at low currents and are intensively cooled, further increasing their instability. These instabilities translate into the electrical characteristics of the plasma reactor. The analysis for the four gases nitrogen, argon, helium, and air shows that the type of plasma-generating gas and its physical parameters have a strong influence on the operational characteristics of the plasma reactor. Current–voltage, power and frequency characteristics of the plasma reactor were plotted experimentally. Characteristics obtained in this way make it possible to determine the areas of effective operation of the plasma reactor, and to estimate the quality of the generated plasma. Based on the characteristics obtained, a method of controlling the plasma parameters can be developed.

Decoupled MPC Power Balancing Strategy for Coupled Inductor Flying Capacitor DC–DC Converter

A decoupled model predictive control (MPC) power balancing strategy for a coupled inductor-based flying capacitor DC–DC converter (FCDC) is a proposed to solve the power imbalance caused by the parameter differences in the coupled inductor. The decoupled mathematical model of coupled inductor FCDC is firstly derived by analyzing the converter operation state under various modes. On this basis, the control relationship between inductor current and flying capacitor (FC) voltage is redefined and an MPC power balance strategy based on the inductor current with single-step optimization is proposed. The proposed MPC strategy not only achieves decoupled power balancing control but also solves multi-objective dynamic optimization control of the inductor current and FC voltage, greatly reducing the computation load. A detailed theoretical analysis of the proposed strategy is presented and the balancing performance is effectively verified through the experiments.

Extended-State-Observer-Based Nonlinear Control for PMSM Servo Systems With Current Constraints and Voltage Saturations

Extended-State-Observer-Based Nonlinear Control for PMSM Servo Systems With Current Constraints and Voltage Saturations

Effect of nozzle contamination on microwave discharge cathode performance

An understanding of the degradation mechanism of a microwave discharge cathode is the key to extending the lifetime of microwave ion thruster systems. This study investigates the effect of nozzle contamination by sputtered Ag-polytetrafluoroethylene (PTFE) on microwave discharge cathode performance. The current–voltage characteristics were measured for nominal and contaminated (by PTFE spray with 0.2 µm thick or tape with 0.15 mm thick) cathodes. The contamination thickness and area on the nozzle were varied to investigate the characteristic differences. It was confirmed that the anode voltage increased by 20 V or more in the case of the contaminated cathode. The anode voltage was measured for the sputter-contaminated cathode to evaluate the effect of contamination under more realistic conditions. After 630 h of sputter-contamination operation, it is estimated that sputtered particles were deposited to a thickness of 77 µm at most, and the anode voltage increased by 8 V. The results show that the downstream surface of the nozzle is critical for maintaining cathode performance. The insulating coating formed by the sputtered PTFE may interfere with ion absorption and degrade electron emission capability. A theoretical model based on the extended Brophy model supports these results. This study provides important information for the use of PTFE-based materials around ion thrusters.

Theoretical study on the structure, spectroscopic, and current–voltage behavior of 11-Cis and Trans retinal isomers in rhodopsin

In this study, the electronic transport properties of 11-Cis and Trans retinal, components of rhodopsin, were investigated as optical molecular switches using the nonequilibrium Green’s function (NEGF) formalism combined with first-principles density functional theory (DFT). These isomers, which can be reversibly converted into each other, were examined in detail. The structural and spectroscopic properties, including infrared (IR), Raman, nuclear magnetic resonance (NMR), and ultraviolet (UV) spectra, were analyzed using the hybrid B3LYP/6–311 + + G** level of theory. Complete vibrational assignments were performed for both forms utilizing the scaled quantum mechanical force field (SQMFF) methodology. To evaluate the conductivity of these molecules, we utilized current–voltage (I-V) characteristics, transmission spectra, molecular projected self-consistent Hamiltonian (MPSH), HOMO–LUMO gap, and second-order interaction energies (E2). The trendline extrapolation of the current–voltage plots confirmed our findings. We investigated the effect of different electrodes (Ag, Au, Pt) and various connection sites (hollow, top, bridge) on conductivity. The Ag electrode with the hollow site exhibited the highest efficiency. Our results indicate that the Cis form has higher conductivity than the Trans form.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Pulsed laser deposition technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p–n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current–voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the colour of the emitted light in these devices.

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on the electrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p-Si devices were produced by coating both materials between the semiconductor and the metal using the radio frequency (RF) sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by x-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current–voltage and transient photocurrent measurements were performed and analyzed under different light intensities. While the ideality factor (barrier height) values of the devices produced using CoFe and CoFeNi materials were found to be 11.45 (0.487 eV) and 9.86 (0.513 eV), respectively, in the dark, they were obtained as 13.29 (0.446 eV) and 11.02 (0.484 eV) under 100 mW cm−2 illumination. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current–voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. The results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys

The electrical conduction mechanisms for bulk samples of In0.1Se0.9−x Sb x (x = 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current–voltage (I–V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295–318 K and 0–50 V voltage range. From I–V measurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott’s variable range hopping such as degree of disorder T 0, density of localized states N(E F), hopping distance (R hop), and hopping energy (W) are calculated. For the high field conduction process Poole–Frenkel, and Schottky processes are studied.

Power optimization of photovoltaic modules under varying environmental conditions based on current equalization collaborating constant voltage control

Abstract The performance of photovoltaic modules is affected by environmental factors such as irradiance and temperature, which can lead to a decrease in output performance or even damage. This study proposes an improved formula for calculating the real maximum power of photovoltaic modules by analyzing the influence of irradiance and temperature. A simulation model is developed using PLECS software to simulate the global maximum power of photovoltaic modules under different environmental conditions, and the results are compared with the calculated real maximum power. A power optimization scheme for photovoltaic modules is then proposed based on current equalization and constant voltage control. This scheme employs a single-switch multi-winding forward-flyback converter to equalize the mismatched currents between cell strings, thereby enhancing the output performance. Traditional proportional integral controllers are utilized to achieve constant voltage control and obtain the real maximum power of photovoltaic modules. Simulation models are built in the PLECS simulation platform to evaluate the performance of a global maximum power point tracking scheme based on the traditional perturb and observe algorithm with current equalization, a segment perturb and observe algorithm without current equalization, and the proposed power optimization scheme. The simulation results demonstrate that the proposed constant voltage control has greater efficiency than the traditional perturb and observe algorithm. The proposed scheme achieves a significant improvement in efficiency, with a 27.87% increase compared to the segment perturb and observe algorithm without current equalization.

Field tests of square and double exponential pulses for transient resistivity measurements using Wenner arrays and hemispheres

Models of frequency-dependent soil resistivity ρ(f) suggest the dual concept of time-dependent resistivity ρ(t) that, for high resistivity soil, increases from 100 ns to 100 μs, a range of time relevant for lightning backflashover performance calculations. Measurements of ρ(t) can be made by impressing impulse or step current and monitoring voltage rise. Time-dependent resistivity can be established with Wenner or Schlumberger probe arrays and also with oblique fall-of-potential measurements from buried hemispheres. Tests show that rectangular and double-exponential pulse currents both have value. Specialized evaluation using “Drained Net Charge” concepts may yield estimates of low-frequency resistivity ρo.

From Fundamental Interfacial Reaction Kinetics to Macroscopic Current–Voltage Characteristics: Case Study of Solid Acid Fuel Cell Limitations and Possibilities

AbstractThe unique properties of solid acid electrolytes, in particular CsH2PO4, are in many ways ideal for fuel cell operation. However, the technology is constrained by high cathode overpotentials. Here a simplified cathode geometry is employed to obtain the fundamental electrochemical parameters (exchange current density and charge transfer coefficient) describing the oxygen reduction reaction (ORR) at the CsH2PO4‐Pt‐gas interface. The parameters are incorporated into a 1D model of the voltage–current characteristics of realistic SAFC cathodes, which reproduced the measured polarization behavior of such cathodes without recourse to fitting adjustable parameters. Following this validation, the model is utilized to evaluate the impact of changes to cathode properties, microstructure, and operating conditions. Of these, the charge transfer coefficient, measured to have a value of ≈0.6 for ORR on Pt in the SAFC cathode environment, is found to have the greatest impact on power output. Nevertheless, even without material modifications, a combination of microstructural and operational modifications are identified with projected performance metrics meeting Department of Energy targets (0.8 V at 300 mA cm−2, and peak power density of 1 W cm−2), albeit at high Pt loadings. However, the analysis indicates that truly meaningful advances will likely necessitate the discovery of alternative ORR catalysts.

Optimizing the working mechanism of CsPbI3/CsPbBr3 heterojunction solar cells using SCAPS-1D

In recent years, notable progress has been made in the field of perovskite-perovskite junctions, including the effective implementation of a structural assembly engineering technique to enhance the performance of perovskite solar cells (PSCs). A comprehensive investigation of a heterojunction structure consisting of absorber layers composed of CsPbI3 and CsPbBr3 was conducted via the implementation of SCAPS-1D simulation. The motivation for depositing CsPbBr3 onto CsPbI3 is to utilize it as a protective layer that inhibits or mitigates the ongoing degradation of CsPbI3. This study examines the influence of several factors on the performance of absorbers, including absorber thickness, band offset, trap-assisted defect density, working temperature, work function, series and shunt resistance, and doping level. The addition of a CsPbBr3 layer was shown to significantly boost the photovoltaic performance of CsPbI3 PSCs. Furthermore, the functioning of heterojunction PSCs is highly dependent upon the operating temperature and density of defects. The device with the FTO/ZnOS/CsPbI3/CsPbBr3/CZTS configuration demonstrated impressive power conversion efficiency (PCE), open-circuit voltage (VOC), current density voltage (JSC), and fill factor (FF) values of 22.12%, 1.26 V, 20.62 mA/cm2, and 84.86%, respectively. These findings will offer valuable theoretical insights into the enhancement and production of PSCs with improved efficiency and stability.

УЗАГАЛЬНЕННЯ ОСНОВНИХ ПОЛОЖЕНЬ ДЕКОМПОЗИЦІЇ ТРАНСФОРМАТОРНО-КЛЮЧОВИХ ВИКОНАВЧИХ СТРУКТУР РЕГУЛЯТОРІВ НАПРУГИ З ДИСКРЕТНО-РАЗОВИМ КЕРУВАННЯМ НАПІВПРОВІДНИКОВИМИ ЕЛЕМЕНТАМИ

Executive structures of a significant part of voltage regulators in systems of conversion of electricity parameters are based on the integration of semiconductor switch and transforming elements (SE and TE, respectively). In particular, these are transformer-and-switches executive structure (TSES), in which the TE windings are sectioned in a certain way or have intermediate taps with key elements connected to them. Discrete-time control of these KEs makes it possible to realize the operation of TSES in a set of operating states with corresponding voltage transfer coefficients. The purpose of the work was to generalize the main provisions of improving TSES voltage regulators through their decomposition (separation into separate control units) in order to ensure high efficiency of semiconductor devices and reduce their losses. The peculiarities of the decomposition of TSES during the regulation of alternating and rectified current voltage are analyzed. Expedient depths of decomposition are determined. It has been proven the operation of reformatting sec-tions in control units, subject to compliance with the optimal laws of sectioning of the winding, ensures the necessary efficiency of the use of SE. Recommendations are given on the areas of implementation of rectified current voltage regulators. References 7, tables 3, figures 3.