Abstract

ABSTRACT Necessity of bandwidth requires the effective use of it for high speed data transmission and faster read/write operation in memory cells. In this paper the transfer function expressions for RC interconnect line is presented for resistive load. The line delay, bandwidth and step response for current and voltage mode signalling is formulated. The current mode and voltage mode signalling provides the 3-dB bandwidth of 6.8 GHz and 3.1 GHz, respectively. An interconnect line modelled as either RLC or RC line depending upon input signal rise time, damping, and range of interconnect length with significant inductance effect is investigated for global interconnect lines. Low swing for column bit line in memory architectures is very important and estimated in terms of dc coefficients. For RC global interconnect of 10 mm, a swing of 0.382 V is obtained for current mode signalling, when a power supply of 1.8 V is applied to the network. DC coefficient and steady state value has been obtained which is significant for power computation on column bit line. It is also analytically validated by SPICE and MATLAB simulations.

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