Current Shot Noise Research Articles

InP-based high-performance extended short wavelength p-B-n infrared photodetector with InGaAs/GaAsSb type-II superlattice absorption layer

High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga0.51As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of ∼2.1 μm and ∼2.6 μm, respectively. At a bias voltage of −100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 μm, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 × 1010 cm·Hz1/2/W (at a peak responsivity of 2.1 μm) under −100 mV applied bias at 300 K.

Determining Transmission Characteristics from Shot-Noise-Driven Electroluminescence in Single-Molecule Junctions.

Biased metal-molecule-metal junctions emit light through electroluminescence, a phenomenon at the intersection of molecular electronics and nanoplasmonics. This can occur when the junction plasmon mode is excited by inelastic electron current fluctuations. Here, we simultaneously measure the conductance and electroluminescence intensity from single-molecule junctions with time resolution in a solution environment at room temperature. We use current versus bias data to determine the molecular junction transport parameters and then relate these to the expected current shot noise. We find that the electroluminescence signal accurately matches the theoretical prediction of shot-noise-driven emission in a large fraction of the molecular junctions studied. This introduces a novel experimental method for qualitatively estimating finite-frequency shot noise in single-molecule junctions under ambient conditions. We further demonstrate that electroluminescence can be used to obtain the level alignment of the frontier orbital dominating transport in the molecular junction.

Electrical detectability of magnon-mediated spin current shot noise

Electrical detectability of magnon-mediated spin current shot noise

Quantum noise of diode laser radiation

Semiconductors lasers from several manufacturers have been investigated. Rate equations were proposed to describe the dynamics and explain the mechanisms of the appearance of quantum noise in diode lasers. Stationary solutions of the rate equations were obtained. For the lasers under study, the threshold currents and the number of photons at the threshold are obtained. Four mechanisms of the quantum noises appearance were described: Poisson noises of the photons, Poisson noises of the electrons, shot noises of the pump current, and quantum noise of the radiation field. The photon lifetimes for the investigated diode lasers have been determined. The shot noise of the pumping current does not play a significant role. The Poisson noise of photons is responsible for the maximum noise at the generation threshold of a diode laser. The analysis of quantum noises of quantum-cascade diode lasers is carried out.

High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of ∼ 2.1 μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03 × 10−3 A/cm2 is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.29 × 1010cm⋅Hz1/2/W (at a peak responsivity of 2.0 μm) under –50 mV applied bias.

High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.

High-performance infrared p-i-n photodetectors based on InAs/InAsSb/AlAsSb superlattices on GaSb substrate have been demonstrated at 300K. These photodetectors exhibit 50% and 100% cut-off wavelength of ∼3.2 µm and ∼3.5 µm, respectively. Under -130 mV bias voltage, the device exhibits a peak responsivity of 0.56 A/W, corresponding to a quantum efficiency (QE) of 28%. The dark current density at 0 mV and -130 mV bias voltage are 8.17 × 10-2 A/cm2 and 5.02 × 10-1 A/cm2, respectively. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 3.43 × 109 cm·Hz1/2/W (at a peak responsivity of 2.5 µm) under -130 mV of applied bias.

Shot noise of photonic heat transport through an oscillation device modulated by Majorana fermions

The photonic heat transport through an oscillation device under the modulation of Majorana bound states (MBSs) is investigated by using nonequilibrium Green’s function method. The photonic heat current correlation and shot noise formulas are derived. The overall behavior of heat shot noise is governed by terminal temperatures, while its detailed construction is modulated by the attached MBSs and oscillation device. The maximum values of heat current and shot noise are located at integer n times quantum flux Φ0, while they are modulated to zero at half integer of quantum flux (n+12)Φ0 due to changing magnetic flux. The Fano factor presents explicit nonlinear behavior by decreasing firstly to the minimum value and then increasing as the increase of temperature difference. The minimum value of Fano factor is raised up, while its position shifts towards zero temperature difference due to increasing terminal photon frequency. The monotonous enhancement of Fano factor valley is presented due to increasing the coupling constant λ between oscillation device and MBSs, while nonmonotonous variation of Fano factor valley is generated by adjusting the coupling energy ɛM of MBSs.

Noise behaviors of SWIR InxGa1-xAs/InP focal plane arrays as a function of lattice-mismatch degree

A quantitatively investigation on the dark noise behaviors of In0.53Ga0.47As/InP, In0.75Ga0.25As/In0.75Al0.25As/InP and In0.83Ga0.17As/In0.83Al0.17As/InP short-wavelength infrared (SWIR) focal plane arrays (FPAs) with cutoff wavelengths (λc) of 1.7, 2.2 and 2.5 μm, respectively, is presented. Theoretical FPA noise model consisting of the diode thermal noise, the dark current shot noise, the operational transimpedance amplifier (OTA) thermal noise, the 1/f noise, the sample and hold noise of the circuit, and etc. were fully taken into consideration. The results show that the dark noises are mainly composed of the OTA thermal noise of the readout circuit under short integration times (Tint) for all three FPAs. Under long Tint, the thermal noises from the photodiode arrays at 300 K is acting as the primary source for the dark noise of the lattice-matched In0.53Ga0.17As FPA, whereas noises of the lattice-mismatched 2.2 and 2.5 μm FPAs are identified to be mainly comes from the diode thermal noise, the dark current shot noise, and the 1/f noise at 150 and 180 K. In addition, an overall trend that the contribution of the 1/f noise increases significantly even if the junction impedance increases and the dark current decreases by cooling down for the extended wavelength detector, which is related to the existence of high density misfit dislocation defect-related trap states in the materials. These results suggest that lowering the junction capacitance and increasing the junction resistance are effective routes to suppress the total readout noise of the InGaAs FPAs, which essentially relies on the improvements on the material epitaxial growth and photodiode array processing recipes.Index Terms: readout noise, lattice-mismatch, focal plane array, InGaAs, noise model.

Current shot noise in atomic contacts: Fe and FeH2 between Au electrodes

Single Fe atoms on Au(111) surfaces were hydrogenated and dehydrogenated with the Au tip of a low-temperature scanning tunneling microscope (STM). Fe and FeH$_2$ were contacted with the tip of the microscope and show distinctly different evolutions of the conductance with the tip-substrate distance. The current shot noise of these contacts has been measured and indicates a single relevant conductance channel with the spin-polarized transmission. For FeH$_2$ the spin polarization reaches values up to 80\% for low conductances and is reduced if the tip-surface distance is decreased. These observations are partially reproduced using density functional theory (DFT) based transport calculations. We suggest that the quantum motion of the hydrogen atoms, which is not taken into account in our DFT modeling, may have a significant effect on the results.

Design considerations for advanced MWIR target acquisition systems.

In this paper, mid-wave infrared (MWIR) sensor optimization is provided as a function of the parameter Fλ/d, where F is the f-number, λ is the effective wavelength, and d is the detector pitch. For diffraction limited systems, acquisition range is related to the instantaneous field of view (detector limited operation) when Fλ/d<1, and to the optical properties (optics limited operation) when Fλ/d>2.0. Range performance is a combination of detector and optics resolution limits when Fλ/d is in between. When the system is not strictly diffraction or sampling limited, the optimal Fλ/d depends on other system component characteristics and conditions. Optical system aberrations affect system resolution and decrease range performance. As background shot noise, dark current shot noise, and read noise increase, range decreases. In the infrared spectral region, atmospheric absorption leads to reemission of thermal energy. The detected reemission creates additional shot noise. Atmospheric attenuation greatly affects MWIR sensor range performance. Next-generation MWIR sensors will have smaller detectors, larger arrays, and better sensitivity to enable Fλ/d-based optimization. Previous studies (ΔT=4K for tracked vehicles) suggest that an initial design point is Fλ/d≈2.0. When detecting low contrast targets (ΔT∼0.1K), sensor gain is used to increase the signal for a desired displayed contrast. This gain increases displayed noise and reduces acquisition range. This is typically not an issue for long-wave infrared sensors due to the excess number of photons in the 8-12 µm band but poses a problem for MWIR sensors, which are photon starved. Under such scenarios, the optimum Fλ/d appears to be about 1.5 for MWIR sensors. The results here provide reasonable strategies for MWIR system optimization and a direction associated with future MWIR focal plane development.

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

CMOS image sensors (CISs) hardened by design against total ionizing dose (TID) are exposed to neutron fluences beyond 1014 n(1 MeV)/cm2. Neutron-irradiated devices show a huge increase in the dark current affecting uniformly the pixel array which leads to Gaussian shape dark current distributions. Moreover, random telegraph signal behavior is hardly detectable at these very high neutron fluences since the fluctuation amplitudes are hidden by the dark current shot noise. It is observed that neutrons induce a change in the depleted volume in impacted photodiodes because of doping profile modifications which are responsible for the decrease in the charge-to-voltage conversion factor and quantum efficiency. Even if neutron-induced degradations affect all the image sensor performances, results show that this technology is still functional after having absorbed $8.1\times 10^{14}$ n(1 MeV)/cm2. Image sensors are still able to capture an image without significant degradation compared to nonirradiated devices. Such TID radiation-hardened CISs are thus highly promising for applications where both high TID and high neutron fluence radiation tolerance are required.

Weak Measurement Protocols for Majorana Bound State Identification.

We propose a continuous weak measurement protocol testing the nonlocality of Majorana bound states through current shot noise correlations. The experimental setup contains a topological superconductor island with three normal-conducting leads weakly coupled to different Majorana states. Putting one lead at finite voltage and measuring the shot noise correlations between the other two (grounded) leads, devices with true Majorana states are distinguished from those without by strong current correlations. The presence of true Majorana states manifests itself in unusually high noise levels or the near absence of noise, depending on the chosen device configuration. Monitoring the noise statistics amounts to a weak continuous measurement of the Majorana qubit and yields information similar to that of a full braiding protocol, but at much lower experimental effort. Our theory can be adapted to different platforms and should allow for the clear identification of Majorana states.

Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

A two terminal extended short wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb on a GaSb substrate is designed, fabricated, and investigated. With the base thickness of 40 nm, the device exhibited a 100% cut-off wavelength of ∼2.3 μm at 300 K. The saturated peak responsivity value is 320.5 A/W at 300 K, under front-side illumination without any antireflection coating. A saturated optical gain of 245 at 300 K was measured. At the same temperature, the device exhibited a collector dark current density (at unity optical gain) and a DC current gain of 7.8 × 10−3 A/cm2 and 1100, respectively. The device exhibited a saturated dark current shot noise limited specific detectivity of 4.9 × 1011 cm·Hz1/2/W at 300 K which remains constant over a broad range of wavelengths and applied biases.

Distribution of waiting times between electron cotunneling events

In the resonant tunneling regime sequential processes dominate single electron transport through quantum dots or molecules that are weakly coupled to macroscopic electrodes. In the Coulomb blockade regime, however, cotunneling processes dominate. Cotunneling is an inherently quantum phenomenon and thus gives rise to interesting observations, such as an increase in the current shot noise. Since cotunneling processes are inherently fast compared to the sequential processes, it is of interest to examine the short time behaviour of systems where cotunneling plays a role, and whether these systems display nonrenewal statistics. We consider three questions in this paper. Given that an electron has tunneled from the source to the drain via a cotunneling or sequential process, what is the waiting time until another electron cotunnels from the source to the drain? What are the statistical properties of these waiting time intervals? How does cotunneling affect the statistical properties of a system with strong inelastic electron-electron interactions? In answering these questions, we extend the existing formalism for waiting time distributions in single electron transport to include cotunneling processes via an $n$-resolved Markovian master equation. We demonstrate that for a single resonant level the analytic waiting time distribution including cotunneling processes yields information on individual tunneling amplitudes. For both a SRL and an Anderson impurity deep in the Coulomb blockade there is a nonzero probability for two electrons to cotunnel to the drain with zero waiting time inbetween. Furthermore, we show that at high voltages cotunneling processes slightly modify the nonrenewal behaviour of an Anderson impurity with a strong inelastic electron-electron interaction.

Shot noise of charge and spin transport in a junction with a precessing molecular spin

Magnetic molecules and nanomagnets can be used to influence the electronic transport in mesoscopic junction. In a magnetic field the precessional motion leads to resonances in the dc- and ac-transport properties of a nanocontact, in which the electrons are coupled to the precession. Quantities like the dc-conductance or the ac-response provide valuable information like the level structure and the coupling parameters. Here, we address the current noise properties of such contacts. This encompasses the charge current and spin-torque shot noise, which both show a step-like behavior as functions of bias voltage and magnetic field. The charge current noise shows pronounced dips around the steps, which we trace back to interference effects of electron in quasienergy levels coupled by the molecular spin precession. We show that some components of the noise of the spin-torque currents are directly related to the Gilbert damping and, hence, are experimentally accessible. Our results show that the noise characteristics allow to investigate in more detail the coherence of spin transport in contacts containing magnetic molecules.

Breakdown of Zero-Energy Quantum Hall State in Graphene in the Light of Current Fluctuations and Shot Noise

We have investigated the cross-over from Zener tunneling of single charge carriers to avalanche type of bunched electron transport in a suspended graphene Corbino disk in the zeroth Landau level. At low bias, we find a tunneling current that follows the gyrotropic Zener tunneling behavior. At larger bias, we find avalanche type of transport that sets in at a smaller current the larger the magnetic field is. The low-frequency noise indicates strong bunching of the electrons in the avalanches. On the basis of the measured low-frequency switching noise power, we deduce the characteristic switching rates of the avalanche sequence. The simultaneous microwave shot noise measurement also reveals intrinsic correlations within the avalanche pulses and indicate decrease of correlations with increasing bias.

Analytical high frequency GaN HEMT model for noise simulations

A compact high frequency model for AlGaN/GaN HEMT device valid for noise simulations is presented in this paper. The model is developed based on active transmission line approach and linear two port noise theory that makes it applicable for quasi static as well as non-quasi static device operation. The effects of channel length modulation and velocity saturation are discussed. Moreover, the effect of the gate leakage current on the noise performance of the device is investigated. It is shown that there is an apparent increase in noise generated in the device due to the gate current related shot noise. The common noise figures of merit for HFET are calculated and verified with experimental data.

Shot noise detection in hBN-based tunnel junctions

High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kΩ/μm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. These results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.

Current noise generated by spin imbalance in presence of spin relaxation

We calculate current (shot) noise in a metallic diffusive conductor generated by spin imbalance in the absence of a net electric current. This situation is modeled in an idealized three-terminal setup with two biased ferromagnetic leads (F-leads) and one normal lead (N-lead). Parallel magnetization of the F-leads gives rise in spin-imbalance and finite shot noise at the N-lead. Finite spin relaxation results in an increase of the shot noise, which depends on the ratio of the length of the conductor ($L$) and the spin relaxation length ($l_s$). For $L\gg l_s$ the shot noise increases by a factor of two and coincides with the case of the anti-parallel magnetization of the F-leads.

Photosensitive MIS structures with ultrathin dielectric based on CdXHg1‐XTe (x ∼ 0.4)

AbstractThe work is aimed to studying a possibility of CdHgTe surface passivation and stabilization by tunnel‐thin (∼ 2 nm) native oxide formed by glow discharge plasma oxidation. Kinetics of MCT plasma treatment in two regimes has been obtained. Investigation of the stabilization effect during vacuum annealing and platinum deposition has been performed. It has been established that presence of a native oxide layer on MCT surface results in elimination of mercury out diffusion during the processes. MIS structures with platinum contacts and thin native oxide have been made. They have rectifying behaviour in contrast with structures without the native oxide layer. The barrier height and the detectivity have been determined from the capacitance‐voltage and current‐voltage dependences. The detectivity value of 4×1011cm.Hz1/2W‐1 (at 78 K) determined by dark current shot noise has been reached. (© 2016 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)