Photosensitive MIS structures with ultrathin dielectric based on CdXHg1‐XTe (x ∼ 0.4)

Abstract

AbstractThe work is aimed to studying a possibility of CdHgTe surface passivation and stabilization by tunnel‐thin (∼ 2 nm) native oxide formed by glow discharge plasma oxidation. Kinetics of MCT plasma treatment in two regimes has been obtained. Investigation of the stabilization effect during vacuum annealing and platinum deposition has been performed. It has been established that presence of a native oxide layer on MCT surface results in elimination of mercury out diffusion during the processes. MIS structures with platinum contacts and thin native oxide have been made. They have rectifying behaviour in contrast with structures without the native oxide layer. The barrier height and the detectivity have been determined from the capacitance‐voltage and current‐voltage dependences. The detectivity value of 4×1011cm.Hz1/2W‐1 (at 78 K) determined by dark current shot noise has been reached. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)