Current Rectification Ratio Research Articles

Gate tunable WSe2-BP van der Waals heterojunction devices.

Due to the weak screening effect, the concentration and type of charge carriers in 2D semiconductor heterostructures can be effectively tuned by electrostatic gating, enabling us to realize different types of heterojunctions in a single device. Such 'type tunable' properties are useful for designing novel electrical or optoelectrical devices. Here, we demonstrate a 'type tunable' heterojunction device construct with two pieces of ambipolar 2D semiconductors: WSe2 and black phosphorus (BP). This heterojunction could be tuned to either the p-p junction or n-n junction by gate modulation. The p-p junction shows a large current rectification ratio while the n-n junction shows a negligible current rectification ratio, indicating a large valence band offset and a small conduction band offset at the WSe2/BP interface. In the optoelectrical measurements, we found the amplitude and even the polarity of photocurrent could be modulated by electrostatic gating. Our study could further enhance the understanding of designing devices based on these 'type tunable' van der Waals heterojunctions. Moreover, the properties of the WSe2/BP interface were also experimentally identified through the electrical and optoelectrical measurements in our study.

Protein detection using tunable pores: resistive pulses and current rectification.

We present the first comparison between assays that use resistive pulses or rectification ratios on a tunable pore platform. We compare their ability to quantify the cancer biomarker Vascular Endothelial Growth Factor (VEGF). The first assay measures the electrophoretic mobility of aptamer modified nanoparticles as they traverse the pore. By controlling the aptamer loading on the particle surface, and measuring the speed of each translocation event we are able to observe a change in velocity as low as 18 pM. A second non-particle assay exploits the current rectification properties of conical pores. We report the first use of Layer-by-Layer (LbL) assembly of polyelectrolytes onto the surface of the polyurethane pore. The current rectification ratios demonstrate the presence of the polymers, producing pH and ionic strength-dependent currents. The LbL assembly allows the facile immobilisation of DNA aptamers onto the pore allowing a specific dose response to VEGF. Monitoring changes to the current rectification allows for a rapid detection of 5 pM VEGF. Each assay format offers advantages in their setup and ease of preparation but comparable sensitivities.

Highly Effective Conductance Modulation in Planar Silicene Field Effect Devices Due to Buckling.

Silicene is an exciting two-dimensional material that shares many of graphene’s electronic properties, but differs in its structural buckling. This buckling allows opening a bandgap in silicene through the application of a perpendicular electric field. Here we show that this buckling also enables highly effective modulation of silicene’s conductance by means of an in-plane electric field applied through silicene side gates, which can be realized concurrently within the same silicene monolayer. We illustrate this by using silicene to implement Self-Switching Diodes (SSDs), which are two-dimensional field effect nanorectifiers realized within a single silicene monolayer. Our quantum simulation results show that the atomically-thin silicene SSDs, with sub-10 nm dimensions, achieve a current rectification ratio that exceeds 200, without the need for doping, representing a 30 fold enhancement over graphene SSDs. We attribute this enhancement to a bandgap opening due to the in-plane electric field, as a consequence of silicene’s buckling. Our results suggest that silicene is a promising material for the realization of planar field effect devices.

Ultrasensitive determination of mercury(II) using glass nanopores functionalized with macrocyclic dioxotetraamines

Glass conical nanopores functionalized with a macrocyclic dioxotetraamine derivative (C5) are shown to enable ultrasensitive determination of Hg(II). A complex is formed between Hg(II) and C5, and this converts the functionalized glass nanopore from a rectifying state to a non-rectifying state. The presence of Hg(II) in ~10 pM levels or higher can be detected by measuring the ion current rectification ratio in voltage range of ± 500 mV. This sensing strategy opens new possibilities for development of a simple, portable and convenient device for the quantitation of Hg(II) with very low limits of detection.

Light-Induced Ion Rectification in Zigzag Nanochannels.

Ion transport through nanoporous systems has attracted broad interest due to its crucial role in physiological processes in living organisms and artificial bionic devices. In this work, a nanochannel system with a zigzag inner surface was fabricated by using a two-step anodizing technique. The rectification performance of the zigzag channels was observed by I-V measurement in KCl solution. Unlike channels with asymmetric geometry, the mechanism was analyzed based on the "point effect" of charge distribution and "shape effect" of the zigzag channel. The current rectification ratio decreases from nearly 3.0 to 1.0 when the KCl concentration increased from 0.1 mM to 100 mM. The fabrication of different nanopore systems and exploration of novel mechanisms will help to develop biomimetic membranes for practical applications.

High response Schottky ultraviolet photodetector formed by PEDOT:PSS transparent electrode contacts to Mg0.1Zn0.9O**Project supported by the National Natural Science Foundation of China (Grant No. 50972007), the National Basic Research Program of China (Grant No. 2011CB932703), the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 60825407), and the Opened Fund of the State Key Laboratory on Integrated

In this paper, we report a Schottky ultraviolet photodetector based on poly (3,4-ethylenedioxy-thiophene) poly(styrenesulfonate) (PEDOT:PSS) transparent electrode contacts to Mg0.1Zn0.9O. The I–V characteristic curves of the device are measured in the dark condition and under the illumination of a 340-nm UV light. The device shows a typical rectifying behavior with a current rectification ratio of 103 at ±2 V, which exhibits a good Schottky behavior. The photo-to-dark current ratio is high, which is 1×103 at −4 V. A peak response of 0.156 A/W at 340 nm is observed. The device also exhibits a wide response from 250 nm to 340 nm, with a response larger than 0.1 A/W. It covers the UV-B region (280 nm–320 nm), which makes the device very suitable for the detection of UV-B light.

Organic/Inorganic Hybrid Nanochannels Based on Polypyrrole‐Embedded Alumina Nanopore Arrays: pH‐ and Light‐Modulated Ion Transport

Inspired by the asymmetric structure and responsive ion transport in biological ion channels, organic/inorganic hybrid artificial nanochannels exhibiting pH‐modulated ion rectification and light‐regulated ion flux have been constructed by introducing conductive polymer into porous nanochannels. The hybrid nanochannels are achieved by partially modifying alumina (Al2O3) nanopore arrays with polypyrrole (PPy) layer using electrochemical polymerization, which results in an asymmetric component distribution. The protonation and deprotonation of Al2O3 and PPy upon pH variation break the surface charge continuity, which contributes to the pH‐tunable ion rectification. The ionic current rectification ratio is affected substantially by the pH value of electrolyte and the pore size of nanochannels. Furthermore, the holes (positive charges) in PPy layer induced by the cooperative effect of light and protons are used to regulate the ionic flux through the nanochannels, which results in a light‐responsive ion current. The magnitude of responsive ionic current could be amplified by optimizing this cooperation. This new type of stimuli‐responsive PPy/Al2O3 hybrid nanochannels features advantages of unique optical and electric properties from conducting PPy and high mechanical performance from porous Al2O3 membrane, which provide a platform for creating smart nanochannels system.

Influence of electroosmotic flow on the ionic current rectification in a pH-regulated, conical nanopore.

The ionic current rectification (ICR) is studied theoretically by considering a pH-regulated, conical nanopore. In particular, the effect of electroosmotic flow (EOF), which was often neglected in previous studies, is investigated by solving a set of coupled Poisson, Nernst-Planck, and Navier-Stokes equations. The behaviors of ICR under various conditions are examined by varying solution pH, bulk ionic concentration, and applied electric potential bias. We show that the EOF effect is significant when the bulk ionic concentration is medium high, the pH is far away from the iso-electric point, and the electric potential bias is high. The percentage deviation in the current rectification ratio arising from neglecting the EOF effect can be on the order of 100%. In addition, the behavior of the current rectification ratio at a high pH taking account of EOF is different both qualitatively and quantitatively from that without taking account of EOF.

Hopping Transport and Rectifying Behavior in Long Donor–Acceptor Molecular Wires

We have developed a series of long donor (D)–acceptor (A) block molecular wires (DmAn or DmCAn: C, cyclohexane bridge; m, n = 1–4) attached to Au surfaces with lengths ranging from 3 to 10 nm in order to probe electrical rectification in the hopping regime. In each wire, the donor block was synthesized from the Au surface by stepwise imine condensation between 4,4′(5′)-diformyltetrathiafulvalene electron donors (D) and 1,4-diaminobenzene linkers, followed by the stepwise synthesis of the acceptor block using N,N′-di(4-anilino)-1,2,4,5-benzenebis(dicarboximide) electron acceptors (A) and terephthaldehyde linkers. Molecular junction measurements by conducting probe atomic force microscopy (CP-AFM) revealed that the DmCA1 (m = 1–4) wires exhibited electrical rectification with current rectification ratios as high as 30 at ±1.0 V when contacted with Au-coated tips and Au substrates; DmAn wires did not rectify, suggesting electronic decoupling of the D and A blocks is necessary for diode behavior. The forward bias condition for DmCA1 corresponded to negative potential on the acceptor block and positive potential on the donor block, as anticipated. Furthermore, the rectification ratio was a function of the wire architecture, length, and measurement temperature. Density functional theory (DFT) calculations of ground state neutral and ionized electronic structures and the experimental data for DmCA1 suggest that under forward bias the rate limiting transport step in these diodes is activated hole hopping from the HOMO level of the D block to the HOMO level of the A block; that is, hole-only transport pertains and it is sensitive to energy level alignment. Under reverse bias, the rate limiting transport step is relatively insensitive to temperature, which is consistent with a change in the rate limiting mechanism from hopping to tunneling. We propose a simple energy level model that rationalizes the change in transport mechanism and we suggest how these molecular diode structures might be further improved to achieve better rectification with simultaneous hole and electron transport in the D and A blocks, respectively.

Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

We report on the fabrications and characterizations of axial and radial GaAs nanowire pn junction diode arrays. The nanowires are grown on n-doped GaAs (111)B substrates using the Au-catalyzed vapor—liquid—solid mechanism by metal—organic chemical vapor deposition (MOCVD). Diethyl—zinc and silane are used as p- and n-type dopant precursors, respectively. Both the axial and radial diodes exhibit diode-like J—V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.

All-Graphene Planar Double Barrier Resonant Tunneling Diodes

In this work, we propose an atomically-thin all-graphene planar double barrier resonant tunneling diode that can be realized within a single graphene nanoribbon. The proposed device does not require any doping or external gating and can be fabricated using minimal process steps. The planar architecture of the device allows a simple in-plane connection of multiple devices in parallel without any extra processing steps during fabrication, enhancing the current driving capabilities of the device. Quantum mechanical simulation results, based on non-equilibrium Green's function formalism and the extended Huckel method, show promising device performance with a high reverse-to-forward current rectification ratio exceeding 50 000, and confirm the presence of negative differential resistance within the device's current-voltage characteristics.

High performance current and spin diode of atomic carbon chain between transversely symmetric ribbon electrodes.

We demonstrate that giant current and high spin rectification ratios can be achieved in atomic carbon chain devices connected between two symmetric ferromagnetic zigzag-graphene-nanoribbon electrodes. The spin dependent transport simulation is carried out by density functional theory combined with the non-equilibrium Green's function method. It is found that the transverse symmetries of the electronic wave functions in the nanoribbons and the carbon chain are critical to the spin transport modes. In the parallel magnetization configuration of two electrodes, pure spin current is observed in both linear and nonlinear regions. However, in the antiparallel configuration, the spin-up (down) current is prohibited under the positive (negative) voltage bias, which results in a spin rectification ratio of order 104. When edge carbon atoms are substituted with boron atoms to suppress the edge magnetization in one of the electrodes, we obtain a diode with current rectification ratio over 106.

Fabrication of single cylindrical Au-coated nanopores with non-homogeneous fixed charge distribution exhibiting high current rectifications.

We designed and characterized a cylindrical nanopore that exhibits high electrochemical current rectification ratios at low and intermediate electrolyte concentrations. For this purpose, the track-etched single cylindrical nanopore in polymer membrane was coated with a gold (Au) layer via electroless plating technique. Then, a non-homogeneous fixed charge distribution inside the Au-coated nanopore was obtained by incorporating thiol-terminated uncharged poly(N-isopropylacrylamide) chains in series to poly(4-vinylpyridine) chains, which were positively charged at acidic pH values. The functionalization reaction was checked by measuring the current-voltage curves prior to and after the chemisorption of polymer chains. The experimental nanopore characterization included the effects of temperature, adsorption of chloride ions, electrolyte concentration, and pH of the external solutions. The results obtained are further explained in terms of a theoretical continuous model. The combination of well-established chemical procedures (thiol and self-assembled monolayer formation chemistry, electroless plating, ion track etching) and physical models (two-region pore and Nernst-Planck equations) permits the obtainment of a new nanopore with high current rectification ratios. The single pore could be scaled up to multipore membranes of potential interest for pH sensing and chemical actuators.

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

All-Graphene Planar Self-Switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes

Graphene normally behaves as a semimetal because it lacks a bandgap, but when it is patterned into nanoribbons a bandgap can be introduced. By varying the width of these nanoribbons this band gap can be tuned from semiconducting to metallic. This property allows metallic and semiconducting regions within a single Graphene monolayer, which can be used in realising two-dimensional (2D) planar Metal-Insulator-Semiconductor field effect devices. Based on this concept, we present a new class of nano-scale planar devices named Graphene Self-Switching MISFEDs (Metal-Insulator-Semiconductor Field-Effect Diodes), in which Graphene is used as the metal and the semiconductor concurrently. The presented devices exhibit excellent current-voltage characteristics while occupying an ultra-small area with sub-10 nm dimensions and an ultimate thinness of a single atom. Quantum mechanical simulation results, based on the Extended Huckel method and Nonequilibrium Green's Function Formalism, show that a Graphene Self-Switching MISFED with a channel as short as 5 nm can achieve forward-to-reverse current rectification ratios exceeding 5000.

Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes

We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO type heterostructures, showed diode characteristics. For amorphous ZCO deposited at room temperature on epitaxial ZnO/Al2O3 thin films, we achieved current rectification ratios up to 2 × 1010, ideality factors around 2, and long-term stability.

Current rectification by nanoparticle blocking in single cylindrical nanopores.

Blocking of a charged pore by an oppositely charged nanoparticle can support rectifying properties in a cylindrical nanopore, as opposed to the usual case of a fixed asymmetry in the pore geometry and charge distribution. We present here experimental data and model calculations to confirm this fundamental effect. The nanostructure imaging and the effects of nanoparticle concentration, pore radius, and salt concentration on the electrical conductance-voltage (G-V) curves are discussed. Logic responses based on chemical and electrical inputs/outputs could also be implemented with a single pore acting as an effective nanofluidic diode. To better show the generality of the results, different charge states and relative sizes of the nanopore and the nanoparticle are considered, emphasizing those physical concepts that are also found in the ionic drug blocking of protein ion channels.

Sugar-stimulated robust nanodevice: 4-Carboxyphenylboronic acid modified single glass conical nanopores

In this work, we demonstrate a smart robust nanodevice that rectifies the ion current in response to sugar stimulation. The response is achieved by immobilizing 4-carboxyphenylboronic acid to the wall of a single glass conical nanopore. This smart robust nanodevice shows excellent sugar responsive capacity with the switch between the non-rectifying and rectifying states of the ion transport properties. The ion current rectification ratio increases linearly with increasing concentration of glucose and correlates to the concentration of the target by a simple linear regression equation, which makes quantitative nanosensing easily accessible for application in biomedical fields.

Numerical study of ionic current rectification through non-uniformly charged micro/nanochannel systems

Ionic transport through cylindrical nanochannels with linearly varied surface charge density was numerically investigated. The ends of the nanochannel were connected to microchannels regarded as reservoirs. The walls at the micro/nanochannel junction were referred to as sidewalls that can be electrically neutral or charged. The results showed that the charged sidewalls could enhance the concentration polarization compared to neutral sidewalls. For neutral sidewall, a limiting current similar to charged permselective membranes and a maximum current rectification ratio at certain bulk concentration similar to charged conical nanopores can be found. For the charged sidewall case, no limiting current regime can be observed and the current varied linearly with the applied voltage with a larger slope compared to the Ohmic relation regime. Moreover, no maximum current rectification ratio can be found and the current rectification ratio increased with the decrease in bulk concentration and increases in surface charge density and sidewall length.

Transparent p-CuI/n-ZnO heterojunction diodes

Transparent and electrically conducting p-type copper(I)-iodide thin-films form highly rectifying p-CuI/n-ZnO diodes. Sputtered copper thin films on glass were transformed into polycrystalline γ-CuI by exposing them to iodine vapor. The electrical parameters extracted from Hall effect are p=5×1018 cm−3, μh,Hall=6 cm2/Vs, and ρ=0.2 Ωcm for hole concentration, mobility, and electrical resistivity, respectively. Heterostructures consisting of p-CuI and pulsed-laser deposited n-ZnO were fabricated on a-plane sapphire substrates. The p-CuI/n-ZnO diode exhibits a current rectification ratio of 6×106 at ±2 V and an ideality factor of η=2.14.