Abstract
We report on the fabrications and characterizations of axial and radial GaAs nanowire pn junction diode arrays. The nanowires are grown on n-doped GaAs (111)B substrates using the Au-catalyzed vapor—liquid—solid mechanism by metal—organic chemical vapor deposition (MOCVD). Diethyl—zinc and silane are used as p- and n-type dopant precursors, respectively. Both the axial and radial diodes exhibit diode-like J—V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.
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