Current Gain Research Articles

Current Measurement Gain Compensation Using High-Frequency Signal Injection in Dual Three-Phase PMSM Systems

To online compensate the scaling errors in current measurement caused by incorrect calibration, temperature, aging, and noise, this paper proposes a new solution based on high-frequency (HF) carrier voltage injection in dual three phase permanent magnet synchronous machines. The relationship between the measured HF currents and scaling errors is derived. It shows that the amplitudes of the HF currents are proportional to the scaling errors, based on which three HF current control loops are subsequently designed to eliminate the measured HF currents and compensate the scaling errors. The designed HF controller are independent from the main current and torque regulators, and thus, it can be used for initial scaling gain calibration or periodically used during normal machine operation. Different from general three phase machine systems, the generated HF current components only exist in z <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> z <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> subspace, and thus, no extra torque ripples will be produced. Experimental results validate the proposed control algorithm.

Calculation of GaInSb PNP lateral HBT for complementary bipolar logic technology

In this study, the power consumption and speed of a GaInSb PNP lateral heterojunction bipolar transistor were estimated for applications in complementary bipolar logic circuits. At the supply voltage of 250 mV, the current gain is over 1000, on/off power consumption ratio is approximately 180, and delay time is 2.6 ps. However, the characteristics degrade rapidly at voltages greater than 300 mV, owing to deep saturation and high-level injection.

Self‐Assembly PbS Quantum Dot‐Conjugated Polymer Hybrid‐Layered Phototransistor Enables SWIR Photodetection with High Detectivity

AbstractLead sulfide colloid quantum dots (PbS QDs) offer great opportunities to revolutionize large‐area short‐wave infrared (SWIR) detection technologies due to high absorption coefficients and spectral selectivity. However, a critical issue for QDs‐based SWIR detectors is high dark current noise due to thermal carriers and the large amounts of surface defect states induced by the ligand exchange process, which hinders the improvement of the room temperature detectivity and linear dynamic range. Herein, it is demonstrated that these dilemmas can be overcome by adopting a novel hybrid‐layered phototransistor device architecture composed of a self‐assembly high‐mobility organic conduction channel and a bulk heterojunction infrared absorber containing PbS QDs as sensitizers. Strong photo absorption in the photoactive layer creates photogenerated charges that are transferred to the conduction channel, where they recirculate many times due to the long trapped‐electron lifetime in the photoactive layer and the high carrier mobility of the channel. Therefore, low dark current noise and high photoconductive gain are achieved by both electrical gating and photodoping for carrier‐density modulation of phototransistors. Finally, an optimized SWIR phototransistor device with a low room‐temperature dark current of 7 pA and a high detectivity of 8 × 1012 Jones under 1650 nm light illumination is demonstrated.

1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers.

This paper presents electronically tunable current conveyors using low-voltage, low-power, multiple-input operational transconductance amplifiers (MI-OTAs). The MI-OTA is realized using the multiple-input bulk-driven Metal Oxide Semiconductor transistor (MIBD-MOST) technique to achieve minimum power consumption. The MI-OTA also features high linearity, a wide input range, and a simple Complementary Metal Oxide Semiconductor (CMOS). Thus, high-performance electronically tunable current conveyors are obtained. With the MI-OTA-based current conveyor, both an electronically tunable differential difference current conveyor (EDDCC) and a second-generation electronically tunable current conveyor (ECCII) are available. Unlike the conventional differential difference current conveyor (DDCC) and second-generation current conveyor (CCII), the current gains of the EDDCC and ECCII can be controlled by adjusting the transconductance ratio of the current conveyors. The proposed EDDCC has been used to realize a voltage-to-current converter and current-mode universal filter to show the advantages of the current gain of the EDDCC. The proposed current conveyors and their applications are designed and simulated in the Cadence environment using 0.18 μm TSMC (Taiwan Semiconductor Manufacturing Company) CMOS technology. The proposed circuit uses ±0.5 V of power supply and consumes 90 μW of power. The simulation results are presented and confirm the functionality of the proposed circuit and the filter application. Furthermore, the experimental measurement of the EDDCC implemented in the form of a breadboard connection using a commercially available LM13700 device is presented.

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

We investigate the effects of gamma-ray (γ-ray) irradiation on an In0.53Ga0.47As high electron mobility transistor (HEMT). After γ-ray radiation, the irradiated HEMT shows degradation of the maximum transconductance (g m,max ), the unity current gain cutoff frequency (f T ), and the maximum oscillation frequency (f max)—about 12.8%, 18.0%, and 16.9%, respectively—because of an increase in on-resistance (Ron) in In0.53Ga0.47As HEMTs exposed to high-dose γ-ray radiation. Moreover, we obtain a minimum noise figure (NFmin) of about 1 dB from 8 to 40 GHz for the irradiated HEMT, which is a lower value compared to a non-irradiated HEMT; this is because the gate leakage current is reduced after γ-ray irradiation.

MXene-Enhanced Bi2S3/CdIn2S4 Heterojunction Photosensitive Gate for DEHP Detection in a Signal-On OPECT Aptamer Biosensor.

Organic electrochemical transistors with signal amplification and good stability are expected to play a more important role in the detection of environmental pollutants. However, the bias voltage at the gate may have an effect on the activity of vulnerable biomolecules. In this work, a novel organic photoelectrochemical transistor (OPECT) aptamer biosensor was developed for di(2-ethylhexyl) phthalate (DEHP) detection by combining photoelectrochemical analysis with an organic electrochemical transistor, where MXene/Bi2S3/CdIn2S4 was employed as a photoactive material, target-dependent DNA hybridization chain reaction was used as a signal amplification unit, and Ru(NH3)63+ was selected as a signal enhancement molecule. The poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-based OPECT biosensor modulated by the MXene/Bi2S3/CdIn2S4 photosensitive material achieved a high current gain of nearly a thousand times at zero bias voltage. The developed signal-on OPECT sensing platform realized sensitive and specific detection of DEHP, with a detection range of 1-200 pM and a minimum detection limit of 0.24 pM under optimized experimental conditions, and its application to real water samples was also evaluated with satisfactory results. Hence, the construction of this OPECT biosensing platform not only provides a promising tool for the detection of DEHP but also reveals the great potential of the OPECT application for the detection of other environmental toxins.

Current-Mode Shadow Filter with Single-Input Multiple-Output Using Current-Controlled Current Conveyors with Controlled Current Gain.

In this paper, a novel current-mode shadow filter employing current-controlled current conveyors (CCCIIs) with controlled current gains is presented. The CCCII-based current-mode shadow filters are resistorless and can offer a number of advantages such as circuit simplicity and electronic tuning capability. The proposed shadow filters offer five filtering functions, i.e., low-pass, high-pass, band-pass, band-stop, and all-pass functions, in the same topology. Furthermore, no component matching condition is required to realize all the transfer functions. The natural frequency and quality factor adjustment is possible by using the CCCII current gains without the need to use external amplifiers, all capacitors are grounded, and the filter terminals offer low-input and high-output impedance. To verify the functionality and feasibility of the new topologies, the proposed circuits were simulated using SPICE and the transistor model process parameters NR100N (NPN) and PR100N (PNP) from AT&T's bipolar arrays ALA400-CBIC-R. The simulation results are consistent with the theory. The CCCII experimental setup was designed using commercially available 2N3904 (NPN) and 2N3906 (PNP) transistors with a supply voltage of ±2.5 V. The measurement results confirm the performance of the designed filters.

Blue-light-enhanced avalanche photodiode with amulti-finger grating structure for fluorescence detection.

The responsiveness of the photodetectors is critical to the accuracy of the fluorescent fiber optical temperature sensor. However, the current gain and signal-to-noise ratio (SNR) of traditional photodiodes (PDs) is low, which makes it difficult to meet the high-precision detection requirements of the system. In response to the above problems, this paper achieves a novel, to the best of our knowledge, multi-finger grating (MFG) avalanche photodiode (APD). The device combines the polysilicon gate and the space charge region formed by P+/N-Well to detect photon signals. The conversion capability of the photodetector can be significantly enhanced by the MFG structure. The principle of the device is simulated and verified by technology-computer-aided design (TCAD). The standard grating APD (SG-APD), 2-finger grating APD (2FG-APD), 3-finger grating APD (3FG-APD), and 4-finger grating APD (4FG-APD) are fabricated based on 0.18µm CMOS process. The optoelectronic detection characteristics of these devices are analyzed by establishing an optoelectronic test platform. At 480nm, the responsivity of 2FG-APD, 3FG-APD, and 4FG-APD increases by 79.3%, 96.9%, and 70.2%, respectively, compared to SG-APD (4.021A/W). The test results indicate that 3FG-APD exhibits a strong photon response in the blue light range. The device has broad application prospects in the field of fluorescence detection.

Role of Phonon Scattering on the Transport and Performance of an N-Channel Monolayer Black Phosphorus Transistor

We investigate the influence of phonon scattering on the transport properties and performance metrics of a monolayer n-channel black phosphorus transistor within a four-band tight binding Hamiltonian, employing a recursive Green's function algorithm and Buttiker probe scattering model. Our analysis reveals that electron-phonon scattering significantly degrades the on-state current, while its effects in the subthreshold region are found to be negligible. Further examination identifies optical phonons as the primary contributors to the degradation of on-state current, with acoustic phonons playing a less prominent role. The ballisticity of the device declines from 42% to 24% when transitioning from solely acoustic phonon scattering to the combined influence of acoustic and optical phonons. Expanding the placement of Buttiker probes from beneath the gate region to cover the entire path from source to drain results in a further 48% reduction in on-state current. The on-state current exhibits a parabolic relationship with the inverse Kelvin temperature. To quantify the effects of phonon scattering on device performance, we assess the key parameters, transconductance and unity current gain frequency. Phonon scattering is observed to severely impact both the parameters. The on-state transconductance declines from its ballistic value of 24.9 mS/µm to 3.99 mS/µm when both acoustic and optical phonons are concurrently active. Similarly, the unity current gain frequency decreases from 1.18 to 0.2 THz due to phonon scattering. Additionally, our analysis reveals that approximately 7–9% of the total power dissipated within the device is attributed to phonon scattering effects, while the remainder is released through thermalization in the device's contacts. Phonon scattering is shown to induce both lattice cooling and heating, depending on the presence or absence of potential barriers. When a potential barrier exists in the channel, electrons injected from the source experience lattice cooling before the barrier region and lattice heating after crossing the barrier. Including the source and drain contact resistances in our model unveils that achieving a contact resistance value of approximately 100 Ω-µm is crucial for the effective functioning of black phosphorus devices.

TRIPLE-BAND CIRCULAR PATCH MICROSTRIP ANTENNA FOR WIRELESS COMMUNICATION

In this article, a triple-band patch antenna using a circular patch microstrip antenna is constructed with a low-profile patch antenna using a 1.5 mm thick FR4 substrate (εr= 4.3). As mobile devices like smartphones and laptops become more common, the usage of tiny, triple-band antennas has also become more common. The objective of this research is to design a circular patch antenna with a 3–11 GHz dipole-like radiation pattern, which may be used for industrial, scientific, and medical reasons. For the suggested triple-band antenna design, the slotted radiator with six arches and the reduction of the ground plane are among the components. In addition, the standard 50 Ω RF transmission line stimulates the patch antenna; this transmission line is attached to the microstrip line by an impedance-compliant SMA connection. Data from the experiments are obtained, evaluated, and compared; to the patch's surface current distributions, gain, and radiation patterns. According to the measurements, S11 has an impedance bandwidth in the 5.5 GHz band of less than -10 dB, 6.6 GHz band, and 10.4 GHz band at all frequencies. The superb radiation pattern performance, relatively consistent gain throughout the bands, and practical bandwidths of this antenna make it a good choice for C-band and dual X-band applications.

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

In this letter, high power density AlGaN/GaN high electron-mobility transistors (HEMTs) on a freestanding GaN substrate are reported. An asymmetric Γ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance. The breakdown voltage (BV) is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92 μm. A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V. The maximum oscillation frequency (f max) and unity current gain cut-off frequency (f t) of the AlGaN/GaN HEMTs exceed 30 and 20 GHz, respectively. The results demonstrate the potential of AlGaN/GaN HEMTs on free-standing GaN substrates for microwave power applications.

Sziklai Pair based Small signal Amplifier with bjt-mosfet Hybrid Unit at 180nm Technology

Two circuit models of Small Signal amplifier, constituted with BJT-MOSFET hybrid unit under Sziklai pair topology are designed and analyzed using ‘PSpice’ and ‘Cadence Virtuoso and Spectre simulation tool (at GPDK 180nm technology)’ respectively. First amplifier (Circuit-1) uses PSpice user-defined model of BJT and MOSFET whereas the second amplifier (Circuit-2) consists of transistors available at GPDK 180nm technology. Circuit-1 can amplify the AC signals of 1mV-1nV range with optimum voltage gain 389.532, 137.570 current gain, 14.464MHz bandwidth and 2.43% THD. However, Circuit-2 can amplify AC signals of 0.1mV-10nV range with 164.018 voltage gain, 32.775 current gain, 11.906 MHz bandwidth, and 13.608E-6% THD. Both the proposed amplifier circuits remove narrow band problem and generate better results than earlier announced small signal Sziklai pair amplifier with BJT-MOSFET hybrid unit in respect of voltage and current gains, bandwidth, THD, and power consumption. Proposed amplifiers successfully address the problem of poor frequency response of small signal Darlington pair amplifier in higher frequency range and narrow bandwidth limitations of small-signal PNP Sziklai pair amplifier. Dependency of the proposed amplifiers at various biasing resistances and performance with temperature variation, noise variation, DC supply variation, and phase variation are also discussed herein. Proposed Circuits display strong dependency over ideal maximum forward beta ‘β’ of NPN transistor, Transconductance ‘VTO’ of P-MOS transistor and additional biasing resistances ‘RA’. Layout of Circuit-2 is found to cover 96.3898µm2 area with 11.32µm length and 8.515µm breadth. Minor percentage variation between pre-layout and post-layout simulation results of Circuit-2 validates the proposed design at GPDK 180nm technology. Monte Carlo and Process Corner analysis are also performed to test the robustness and insensitivity of Circuit-2 against mean value of the parameters and process and mismatch respectively. Performance summary of the proposed circuits and comparison with the recently reported designs shows effectiveness of the proposed circuits in terms of power gain, THD, voltage gain, current gain, input referred noise and power gain. Qualitative analysis of the proposed Circuits recommends its usability as Low Noise Amplifier in the portable RF noise measurement system.

Do current pregnancy weight gain guidelines balance risks of adverse maternal and child health in a United States cohort?

BackgroundThe Institute of Medicine pregnancy weight gain guidelines were developed without evidence linking high weight gain to maternal cardiometabolic disease and child obesity. The upper limit of current recommendations may be too high for the health of the pregnant individual and child. ObjectivesThe aim of this study was to identify the range of pregnancy weight gain for pregnancies within a normal body mass index (BMI) range that balances the risks of high and low weight gain by simultaneously considering 10 different health conditions. MethodsWe used data from an United States prospective cohort study of nulliparae followed until 2 to 7 y postpartum (N = 2344 participants with a normal BMI). Pregnancy weight gain z-score was the main exposure. The outcome was a composite consisting of the occurrence of ≥1 of 10 adverse health conditions that were weighted for their seriousness. We used multivariable Poisson regression to relate weight gain z-scores with the weighted composite outcome. ResultsThe lowest risk of the composite outcome was at a pregnancy weight gain z-score of −0.6 SD (standard deviation) (equivalent to 13.1 kg at 40 wk). The weight gain ranges associated with no more than 5%, 10%, and 20% increase in risks were −1.0 to −0.2 SD (11.2–15.3 kg), −1.4 to 0 SD (9.4–16.4 kg), and −2.0 to 0.4 SD (7.0–18.9 kg). When we used a lower threshold to define postpartum weight increase in the composite outcome (>5 kg compared with >10 kg), the ranges were 1.6 to −0.7 SD (8.9–12.6 kg), −2.2 to −0.3 SD (6.3–14.7 kg), and ≤0.2 SD (≤17.6 kg). Compared with the ranges of the current weight gain guidelines (−0.9 to −0.1 SD, 11.5–16 kg), the lower limits from our data tended to be lower while upper limits were similar or lower. ConclusionsIf replicated, our results suggest that policy makers should revisit the recommended pregnancy weight gain range for individuals within a normal BMI range.

Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application

Due to the high electron saturation velocity and breakdown electric field, GaN-based high electron mobility transistors (HEMTs) have been widely used in high frequency and power application, such as telecommunication, satellite communication, and radar system [1]. Since first demonstration of AlGaN/GaN HEMTs in 1993 [2], the RF performance of these device has continuously improved by the progress on epitaxy and device scaling technology [3].The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) from the small-signal equivalent circuit of the HEMT are derived by the following equations [4].From these equations, it can be concluded that in order to achieve high frequency operation, HEMTs should be designed with a T-shaped gate structure that simultaneously achieves low gate resistance (Rg) and low parasitic capacitance (Cgs and Cgd). However, there are complex fabrication processes to form the T-shaped gate. Typically, the T-shaped gate structure is implemented through electron beam lithography process using a tri-layer resist such as PMMA/PMGI/PMMA, which requires multiple exposures or developments. Multiple exposures can cause overlay errors that can significantly affect the T-shaped gate with smaller gate lengths [5]. Also, it is difficult to obtain an undercut structure that enables a good lift-off and guarantees a high yield due to the need for precise dose control. In addition, since the T-shaped gate has an unstable structure in which a narrow foot supports the weight of a wide head, the gate may collapse during a subsequent process.In this work, we fabricated a novel T-shaped gate using the negative e-beam resist HSQ, which offers a simple T-shaped gate fabrication process. The HSQ that was exposed to e-beam is located underneath the gate head and on both sides of the gate foot in our novel T-shaped gate design, providing a robust structure. The HSQ-assisted gate HEMTs exhibit comparable DC/RF performance compared to conventional T-shaped gate HEMTs. Acknowledgement This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MIST) (No. NRF-2021M3C13097672).

High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density

AbstractHot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high‐frequency electronics beyond the limits of SiGe bipolar hetero transistors. With the exploration of 2D materials such as graphene and new device architectures, hot electron transistors have the potential to revolutionize the landscape of modern electronics. This study highlights a novel hot electron transistor structure with a record output current density of 800 A cm−2 and a high current gain α, fabricated using a scalable fabrication approach. The hot electron transistor structure comprises 2D hexagonal boron nitride and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the hot electron transistor opens up opportunities for large‐scale manufacturing. This breakthrough in hot electron transistor technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device.

In Situ Rapid Fabrication of Graphene-Copper Heterojunctions Using Fiber Laser Direct Writing.

Multifunctional three-dimensional heterostructures for flexible electronics have gained significant attention due to their distinctive structural formability and superior electronic and optoelectronic properties. Nevertheless, conventional fabrication techniques have yet to be optimized for flexible substrates. In this study, a straightforward fiber laser direct writing (FLDW) process is demonstrated for the simultaneous fabrication of diodes (PN junctions) and bipolar junction transistors (BJTs) on flexible polyimide substrates, which is realized through the deposition of multifunctional p- or n-type copper oxide films (CuOx) and p- or n-type porous laser-reduced graphene oxide films (LrGO) using fiber laser ablation and deposition. The presence of both p- and n-type semiconductor films is confirmed through material characterization. The fabricated PN junctions exhibit reasonable diode rectification ratios, ranging from 20 to 220, and perform reliably under numerous operating conditions such as light-dark illumination and elevated temperatures. Furthermore, I-V curve analysis indicates that the current gain and electrical performance of printed negative-positive-negative (NPN) (or positive-negative-positive, PNP) BJTs can be tailored by adjusting the laser energy density of the FLDW process and the base gap width of the BJTs. As a proof of concept, the FLDW process is successfully employed to deposit both NPN (or PNP) BJTs composed of LrGO/CuOx heterostructures with controlled current gains. Its ease of operation, versatility, and cost-effectiveness make FLDW promising for large-scale flexible electronics fabrication.

Steep subthreshold slope in nano-wire TFET using a potential well

In this paper, we investigate the effect of a potential well between the source and channel on the subthreshold swing and On-current of a nano-wire TFET. Here, we benefit from the difference between the electron affinities and the band gaps of the Si and the Ge to create a potential well. While the source and the channel are composed of Ge, we place a thin Si layer between them which results in a potential well. By employing this structure, we were able to decrease the subthreshold swing to 15.7 mV/dec and achieve a high Ion at the same time. Additionally, the peak value of the electric field in the device has been decreased by 20 percent, which means we can reduce device size with fewer undesirable effects. In the context of RF analysis, the proposed device exhibits improvements in current gain and unilateral power gain compared to conventional structures. We also examine the impact of interface traps at Ge/Si interface and gate alignment with the potential well.

Frequency Tracking Method and Compensation Parameters Optimization to Improve Capacitor Deviation Tolerance of the Wireless Power Transfer System

Compensation capacitors are naturally susceptible to manufacturing defects and aging effects, leading to the degraded performance of a wireless power transfer (WPT) system. This paper focuses on the compensation parameters optimization during the design stage and control strategy during the operation phase to improve the inherent capacitor error tolerance of the WPT system. The Sobol sensitivity method is applied to rank the importance of deviations of three capacitors on the transfer characteristics, and then the method of tracking the secondary resonance frequency is proposed. The numerical method is applied to find the optimal compensation parameters, with the constraint that the output voltage change caused by the shift of the designed compensation condition is limited to be less than ±5%. Experimental results show that with the proposed frequency tracking method and compensation parameter optimization, the deviation tolerance index is decreased from 0.485 to 0.363, showing an improvement of 25.2%, and the minimum power factor is increased from 0.78 to 0.89. Besides, the characteristics of constant primary coil current and voltage gain are almost not affected.

Novel complementary Sziklai pair based high gain low noise small-signal amplifiers

&lt;span lang="EN-US"&gt;A new paired configuration of opposite polarity BJTs, the “complementary Sziklai pair” is introduced in the series of multi-BJT-based devices like Darlington and Sziklai pair, and its viability is tested in small-signal common emitter (CE) and common collector (CC) amplifier configurations. The Darlington and Sziklai both face the problem of poor frequency response at a higher frequency which is addressed by the proposed configuration. The proposed pair with CE amplifier holds class-A amplification property with a high voltage gain of 200.05, a high current gain of 11.62, wider bandwidth of 1.64 MHz, and a low THD of 1.29E-6%, hence supports the potential of wide applicability in analog communication. Similarly, the proposed pair with CC configuration produces approximately a unit current gain of 0.99 with wider bandwidth of 1.90 MHz and low THD of 1.76E-6%, therefore it can be used as a current buffer in a generalized current follower circuit. Conclusively, the device structure of this new BJT pair may be considered the third consecutive member of the series of Darlington pair and Sziklai pair. The layout of the proposed CE and CC amplifier occupy small areas of 158.30 μm&lt;sup&gt;2&lt;/sup&gt; (10.23×15.47 μm) and 141.16 μm&lt;sup&gt;2&lt;/sup&gt; (10.20×13.84 μm) respectively in 180 nm process technology.&lt;/span&gt;

Performance Analysis of a Cascaded Bidirectional DC-DC Converter for High Current Applications

In this paper, a high-current DC-DC converter with bidirectional capability is presented. The proposed converter topology combines a series capacitor bidirectional converter and a conventional bidirectional converter in a cascaded manner, thus achieving a quadratic voltage gain. The proposed topology is compared with other contemporary high current topologies in terms of voltage gains, component count and conversion efficiency. Furthermore, the converter performance is validated using the Simscape SimPowerSystems toolbox of MATLAB Simulink. It is determined that this topology demonstrated a conversion efficiency of 96% and 98% in step-up and step-down mode respectively, for a 250 W load. Moreover, a current gain of 12.5 was observed in step down mode for a switch duty cycle of 0.4. Lastly, current sharing between inductors and low current ripples were also demonstrated.