Crystalline Quality Of Epitaxial Films Research Articles

Surface reconstruction: An effective method for the growth of mismatched materials

The crystalline quality of epitaxial films depends on the degree of lattice match between substrates and films. Here, we report a growth strategy for large mismatched epi-films to grow GaSb films on Si(111) substrates. The epitaxial strategy can be influenced by controlling the surface reconstructions of Sb-treated Si(111). The film with the best quality was grown on Si(111)-(5⿿3ÿ5⿿3)-Sb surface due to the stress release and the formation of a self-assembled 2D fishbone structure. Controlled surface engineering provides an effective pathway towards the growth of the large mismatched materials.

Crystalline film quality in reduced pressure silicon epitaxy at low temperature

The influence of deposition pressure on epitaxial crystalline film quality has been investigated with respect to vapor-phase silicon epitaxial growth (SiH2Cl2-H2 system). It is shown that the crystalline film quality has been improved by reducing the deposition pressure. In addition, a prebaking process at reduced pressure has been found to be effective for obtaining single-crystalline silicon films with atmospheric pressure deposition as well as reduced pressure deposition. The deposition temperature can be lowered down to 930 °C with perfect crystalline film by reducing the deposition pressure. The crystalline quality of epitaxial films grown at a low temperature of 930 °C using the reduced pressure technique has been verified to be excellent by fabricating bipolar transistors with an oxide isolation technique.

Evaluation of Crystalline Quality by Ultraviolet Reflectivity Measurement (UVRM)

The damage distribution in ion‐implanted silicon and the crystalline quality of epitaxial films are evaluated by detecting the reflectivity change in a sample at 275 nm with reference to the reflectivity at 330 nm, and experimental results are compared with the Rutherford backscattering spectra. The damage distribution induced by P+ implantation is clearly distinguished from that by Si+ implantation in both P+‐ and Si+‐implanted samples. The recrystallization process of the Si+‐implanted region is identified by UVRM. The distribution profile of crystalline imperfection in a silicon epitaxial film on a porous silicon layer is evaluated by UVRM, and is in good agreement with the depth profile of dechanneled fraction obtained by RBS measurement.