Abstract
The damage distribution in ion‐implanted silicon and the crystalline quality of epitaxial films are evaluated by detecting the reflectivity change in a sample at 275 nm with reference to the reflectivity at 330 nm, and experimental results are compared with the Rutherford backscattering spectra. The damage distribution induced by P+ implantation is clearly distinguished from that by Si+ implantation in both P+‐ and Si+‐implanted samples. The recrystallization process of the Si+‐implanted region is identified by UVRM. The distribution profile of crystalline imperfection in a silicon epitaxial film on a porous silicon layer is evaluated by UVRM, and is in good agreement with the depth profile of dechanneled fraction obtained by RBS measurement.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
