Abstract
The crystalline quality of epitaxial films depends on the degree of lattice match between substrates and films. Here, we report a growth strategy for large mismatched epi-films to grow GaSb films on Si(111) substrates. The epitaxial strategy can be influenced by controlling the surface reconstructions of Sb-treated Si(111). The film with the best quality was grown on Si(111)-(5⿿3ÿ5⿿3)-Sb surface due to the stress release and the formation of a self-assembled 2D fishbone structure. Controlled surface engineering provides an effective pathway towards the growth of the large mismatched materials.
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