Cryogenic Amplifier Research Articles

Superconducting Nanoelectromechanical Transducer Resilient to Magnetic Fields.

Nanoscale electromechanical coupling provides a unique route toward control of mechanical motions and microwave fields in superconducting cavity electromechanical devices. However, conventional devices composed of aluminum have presented severe constraints on their operating conditions due to the low superconducting critical temperature (1.2 K) and magnetic field (0.01 T) of aluminum. To enhance their potential in device applications, we fabricate a superconducting electromechanical device employing niobium and demonstrate a set of cavity electromechanical dynamics, including back-action cooling and amplification, and electromechanically induced reflection at 4.2 K and in strong magnetic fields up to 0.8 T. Niobium-based electromechanical transducers operating at this temperature could potentially be employed to realize compact, nonreciprocal microwave devices in place of conventional isolators and cryogenic amplifiers. Moreover, with their resilience to magnetic fields, niobium devices utilizing the electromechanical back-action effects could be used to study spin-phonon interactions for nanomechanical spin-sensing.

Cryogenic GaAs high-electron-mobility-transistor amplifier for current noise measurements.

We show that a cryogenic amplifier composed of a homemade GaAs high-electron-mobility transistor (HEMT) is suitable for current-noise measurements in a mesoscopic device at dilution-refrigerator temperatures. The lower noise characteristics of our homemade HEMT lead to a lower noise floor in the experimental setup and enable more efficient current-noise measurement than is available with a commercial HEMT. We present the dc transport properties of the HEMT and the gain and noise characteristics of the amplifier. With the amplifier employed for current-noise measurements in a quantum point contact, we demonstrate the high resolution of the measurement setup by comparing it with that of the conventional one using a commercial HEMT.

Low-power transimpedance amplifier for cryogenic integration with quantum devices

The development of quantum electronic devices operating below a few Kelvin degrees is raising the demand for cryogenic complementary metal-oxide-semiconductor electronics (CMOS) to be used as in situ classical control/readout circuitry. Having a minimal spatial separation between quantum and classical hardware is necessary to limit the electrical wiring to room temperature and the associated heat load and parasitic capacitances. Here, we report prototypical demonstrations of hybrid circuits combining silicon quantum dot devices and a classical transimpedance amplifier, which is characterized and then used to measure the current through the quantum dots. The two devices are positioned next to each other at 4.2 K to assess the use of the cryogenic transimpedance amplifier with respect to a room-temperature transimpedance amplifier. A quantum device built on the same substrate as the transimpedance amplifier is characterized down to 10 mK. The transimpedance amplifier is based on commercial 28 nm fully depleted Silicon-on-insulator (FDSOI) CMOS. It consists of a two-stage Miller-compensated operational amplifier with a 10 MΩ polysilicon feedback resistor, yielding a gain of 1.1×107 V/A. We show that the transimpedance amplifier operates at 10 mK with only 1 μW of power consumption, low enough to prevent heating. It exhibits linear response up to ±40 nA and a measurement bandwidth of 2.6 kHz, which could be extended to about 200 kHz by design optimization. The realization of custom-made electronics in FDSOI technology for cryogenic operation at any temperature will improve measurement speed and quality inside cryostats with higher bandwidth, lower noise, and higher signal-to-noise ratio.

Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis

We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise cryogenic CMOS transimpedance amplifier is exploited to perform low-frequency noise characterization down to the single electron, single donor and single phonon regime simultaneously, not otherwise visible through standard stability diagrams. Single electron tunneling as well as phonon-mediated features emerges in rms-noise measurements. Phonons are emitted at high frequency by generation-recombination phenomena by the impurity atom. The phonon decay is correlated to a Lorentzian 1/f 2 noise at low frequency.

Simulation of low-noise amplifier with quantized ballistic nanowire channel

The concept of a cryogenic low-noise amplifier (LNA) using quantized conduction in a 1D channel is proposed and explored through simulations. A MOSFET with a 1D channel (nanowire) will exhibit the formation of plateaus in the current due to sub-band quantization at temperatures of below about 100 K and low drive bias. Using a ballistic 1D top-of-the-barrier model, we show that the current plateaus significantly enhance the transconductance, enabling low noise and high gain at low DC power dissipation—key characteristics for LNA applications such as quantum computing. The results indicate that cryogenic 1D ballistic MOSFETs may offer a significant improvement in noise performance and power dissipation (40x reduction) over traditional devices for cryogenic applications with low input power, such as quantum computing.

A wideband cryogenic microwave low-noise amplifier.

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Cryogenic low-noise amplifiers for measurements with superconducting detectors.

We designed, implemented, and characterized differential amplifiers for cryogenic temperatures based on Si bipolar junction transistor technology. The amplifiers show high gain values of more than 60 dB at 300, 77, and 48 K. The minimum voltage noise spectral density was achieved at 77 K and corresponded to 0.33 nV/Hz0.5 with a flicker noise of 20 Hz. The maximum voltage gain was 70 dB at 77 K for a frequency range from DC to 17 kHz. We experimentally show that the parallel differential circuit design allows for a reduction of the voltage noise from 0.55 to 0.33 nV/Hz0.5 at 77 K.

InP HEMTs for Sub-mW Cryogenic Low-Noise Amplifiers

This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of $112~\mu \text{W}$ . This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current with the use of an InP etch stop layer and Pt gate metal. The noise performance of InP HEMTs was demonstrated in a 4–8 GHz (C–band) three-stage hybrid LNA at the ambient temperature of 5 K. At a dc power dissipation of $300~\mu \text{W}$ , the average noise temperature was 2.8 K with 27 dB gain. At a dc power dissipation of $112~\mu \text{W}$ , the LNA exhibited an average noise temperature of 4.1 K with a gain of 20 dB. The presented results demonstrate the large potential of InP HEMT technology for sub-mW cryogenic LNA design.

Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier

Fault-tolerant spin-based quantum computers will require fast and accurate qubit read out. This can be achieved using radiofrequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07aF/Hz. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1μs of integration time.

Broadband electrical action sensing techniques with conducting wires for low-mass dark matter axion detection

Due to the inverse Primakoff effect, it has been shown that when axions mix with a DC B→-field, the resulting electrical action will produce an AC electromotive force, which oscillates at the Compton frequency of the axion. As in standard electrodynamics, this electromotive force may be modelled as an oscillating effective impressed magnetic current boundary source. We use this result to calculate the sensitivity of new experiments to low-mass axions using the quasi-static technique, defined as when the Compton wavelength of the axion is greater than the dimensions of the experiment. First, we calculate the current induced in a straight conducting wire (electric dipole antenna) in the limit where the DC B→-field can be considered as spatially constant and show that it has a sensitivity proportional to the axion mass. Following this we extend the topology by making use of the full extent of the spatially varying DC B→-field of the electromagnet. This is achieved by transforming the 1D conducting wire to a 2D winding with inductance, to fully link the effective magnetic current boundary source and hence couple to the full axion induced electrical action (or electromotive force). We investigate two different topologies: The first uses a single winding, and couples to the effective short circuit current generated in the winding, which is optimally read out using a sensitive low impedance SQUID amplifier: The second technique uses multiple windings, with every turn effectively increasing the induced voltage, which is proportional to the winding number. The read out of this configuration is optimised by implementing a cryogenic low-noise high input impedance voltage amplifier. The end result is the realisation of new Broadband Electrical Action Sensing Techniques with orders of magnitude improved sensitivity over current low-mass axion experiments, with a sensitivity linearly proportional to the axion–photon coupling and capable of detecting QCD dark matter axions in the mass range of 10−12−10−8eV and below.

Granular Aluminum Meandered Superinductors for Quantum Circuits

We have designed superinductors made of strongly disordered superconductors for implementation in "hybrid" superconducting quantum circuits. The superinductors have been fabricated as meandered nanowires made of granular Aluminum films. Optimization of the device geometry enabled realization of superinductors with the inductance $\sim 1 {\mu}H$ and the self-resonance frequency over 3 GHz. These compact superinductors are attractive for a wide range of applications, from superconducting circuits for quantum computing to microwave elements of cryogenic parametric amplifiers and kinetic-inductance photon detectors.

A Measuring Stand for Single-Photon Detectors Based on NbN Nanostructures

A measuring complex for recording events by single-photon superconducting detectors based on NbN structures is presented; low-noise high-frequency HEMT transistors are used as cryogenic amplifiers in it.

Modelling of the laser amplification process with allowance for the effect of the temperature distribution in an Yb : YAG gain element on the thermophysical and lasing characteristics of the medium

A time-dependent three-dimensional model for the laser amplification process has been constructed with allowance for the effect of the temperature distribution on the thermophysical and lasing characteristics of gain media. We have performed numerical modelling of the laser amplification process in the gain elements of a two-stage subjoule-level cryogenic laser amplifier operating at a pulse repetition rate of up to 1 kHz. It has been shown that taking into account the temperature distribution is of critical importance in calculation of cryogenically cooled laser amplifiers pumped with high-power diodes. We have found optimal diode pump parameters at which the maximum achievable pulse energy at the amplifier output can reach 300 and 570 mJ at pulse repetition rates of 1000 and 500 Hz, respectively.

Pulse Response of a Kinetic Inductance Detector in the Nonlinear Regime

Over the last few years, kinetic inductance detectors (KIDs) became the object of increasing interest as photon and phonon detectors. From this perspective, the pulse response of such detectors deserves an in-depth study. In most applications, the sensitivity of the KID is ultimately limited by the white noise from the cryogenic amplifier, which is reduced by increasing the power supplied to the device. On the other hand, a high readout power leads to a nonlinear response of the microresonator, originating from the dependence on the current acquired by the kinetic inductance. This paper describes a model for the response to optical pulses of a KID driven to the nonlinear regime, taking into account not only the electrical effects but also the thermal ones induced by power absorption. The model has been validated on data collected using an aluminium resonator developed within the CALDER project (http://www.roma1.infn.it/exp/calder/).

Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification.

Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable readout with high fidelity, however, further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622MHz with a Josephson parametric amplifier, that operates in the 500-800MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio, we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 μs, well below the requirements for fault-tolerant readout and 30 times faster than without the Josephson parametric amplifier. Additionally, the Josephson parametric amplifier allows operation at a lower radio-frequency power while maintaining identical signal-to-noise ratio. We determine a noise temperature of 200mK with a contribution from the Josephson parametric amplifier (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the readout speed.

Wideband 67−116 GHz receiver development for ALMA Band 2

Context. The Atacama Large Millimeter/submillimeter Array (ALMA) has been in operation since 2011, but it has not yet been populated with the full suite of its planned frequency bands. In particular, ALMA Band 2 (67−90 GHz) is the final band in the original ALMA band definition to be approved for production. Aims. We aim to produce a wideband, tuneable, sideband-separating receiver with 28 GHz of instantaneous bandwidth per polarisation operating in the sky frequency range of 67−116 GHz. Our design anticipates new ALMA requirements following the recommendations of the 2030 ALMA Development Roadmap. Methods. The cryogenic cartridge is designed to be compatible with the ALMA Band 2 cartridge slot, where the coldest components – the feedhorns, orthomode transducers, and cryogenic low noise amplifiers – operate at a temperature of 15 K. We use multiple simulation methods and tools to optimise our designs for both the passive optics and the active components. The cryogenic cartridge is interfaced with a room-temperature (warm) cartridge hosting the local oscillator and the downconverter module. This warm cartridge is largely based on GaAs semiconductor technology and is optimised to match the cryogenic receiver bandwidth with the required instantaneous local oscillator frequency tuning range. Results. Our collaboration has resulted in the design, fabrication, and testing of multiple technical solutions for each of the receiver components, producing a state-of-the-art receiver covering the full ALMA Band 2 and 3 atmospheric window. The receiver is suitable for deployment on ALMA in the coming years and it is capable of dual-polarisation, sideband-separating observations in intermediate frequency bands spanning 4−18 GHz for a total of 28 GHz on-sky bandwidth per polarisation channel. Conclusions. We conclude that the 67−116 GHz wideband implementation for ALMA Band 2 is now feasible and that this receiver provides a compelling instrumental upgrade for ALMA that will enhance observational capabilities and scientific reach.

A Cryogenic Front-End Preamplifier Operating at 120 K for Bolometric Detector

In this paper, the design and test results of a front-end cryogenic amplifier for a bolometer detector are presented. The amplifier is implemented with two low-noise Si JFETs, where the first FET is configured as a source follower amplifier and the second FET provides a high dynamic resistance to keep the voltage gain very close to unity. A 3 dB bandwidth over a wide range from DC to 10 MHz is achieved in this design. The input voltage noise density is ~ 1.9 nV/√Hz at 300 K, which further reduces to 1.6 nV/√Hz at 120 K. The flicker corner frequency observed is below 50 Hz.

A low noise and low power cryogenic amplifier for single photoelectron sensitivity with large arrays of SiPMs

This paper presents a low noise amplifier for large arrays of silicon photomultipliers (SiPMs) operated in cryogenic environments, especially liquid argon (87 K) and liquid nitrogen (77 K) . The goal is for one amplifier to read out a total photosensitive surface of tens of cm2 while retaining the capability to resolve single photoelectron signals. Due to the large capacitance of SiPMs, typically a few nF per cm2, the main contributor to noise is the series (voltage) component. A silicon-germanium heterojunction bipolar transistor (HBT) was selected as the input device of the cryogenic amplifier, followed by a fully differential operational amplifier, operated in an unconventional feedback configuration. The input referred voltage noise of the circuit at 77 K is just below 0.4 nV/√Hz white (above 100 kHz) and 1 nV/√Hz at 10 kHz. The value of the base spreading resistance of the HBT at 77 K was determined from noise measurements at different bias currents. Power consumption of the full circuit is about 2.5 mW . The design gives the flexibility to optimally compensate the feedback loop for different values of the input capacitance, and obtain a gain-bandwidth product in the GHz range. The signal-to-noise ratio obtained in reading out SiPMs is discussed for the case of a 300 kHz low pass filter and compared with the upper limit that would derive from applying optimum filtering algorithms.

Construction of a gigahertz-bandwidth radio-frequency scanning tunneling microscope based on a commercial low-temperature system

The highest frequency of the electric signal that a conventional scanning tunneling microscope (STM) can process typically lies in the kilohertz regime, imposing a limitation on its temporal resolution to the submillisecond regime. When extracting (feeding) the high frequency, or radio-frequency (RF), signal out of (into) the tunnel junction, the most challenging part is that the tunnel junction has a very high impedance, causing significant reflections. Here, we present a systematic solution on the construction of RF-STM with high sensitivity. To minimize radiation loss, using coaxial cables as conducting wires, we designed an active impedance matching network (IMN) based on a field-effect transistor, which can provide impedance matching over a wide frequency range and can bridge the enormous impedance difference associated with the tunnel junction. To shorten the signal cable before amplification, the STM probe itself was directly mounted on the IMN as the input pin, which is an unprecedented attempt to minimize the undesired parasitic capacitances. Furthermore, we employed a two-stage cryogenic SiGe low noise amplifier and a high-end spectrum analyzer to amplify and subsequently analyze the RF signal of interest. After this systematic engineering, the bandwidth of our STM has been improved to the gigahertz regime, implying a six orders of magnitude improvement. The sensitivity level of our newly built RF-STM is measured to be better than 1.0 pA/√Hz at 200 MHz at 78 K. The RF-STM also finds its application in nanoscale thermometry. Our efforts in its instrumentation should contribute to the development of high frequency scanning tunneling microscopy.

A Low-Power, Inductorless Wideband Cryogenic Amplifier for Superconducting Nanowire Single Photon Detector

This paper presents a low-power, inductorless wideband cryogenic amplifier for superconducting nanowire single photon detector. To achieve wide bandwidth, low power consumption and small chip area, a modified Cherry–Hooper amplifier topology is used. With good input and output match, at 4.2 K temperature the measurement results show that the amplifier achieves 23-dB gain with a flat gain response, a 3-dB bandwidth of over 3.4 GHz, which covers frequencies as low as 130 kHz. Fabricated in a 0.13- μ m silicon germanium (SiGe) BiCMOS technology, the amplifier core occupies a silicon area of only 0.075 mm² and consumes a power of only 4 mW.