Critical Feedback Level Research Articles

Reflection sensitivity of dual-state quantum dot lasers

This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers, showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold. This sensitivity can be degraded by increasing the excited-to-ground-state energy separation, which results in a high excited-to-ground-state threshold ratio. In addition, the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor, which leads to a low critical feedback level. These findings illuminate a path to fabricate reflection-insensitive quantum dot lasers for isolator-free photonic integrated circuits.

Analysis of the regimes of feedback effects in quantum dot laser

We investigated the optical feedback effects on the static and dynamic characteristics of 1.3 μm quantum-dot (QD) Fabry–Pérot laser under reflection from −40 dB up to −8 dB. The onset of coherence collapse is determined as −14 dB from the optical and electrical spectra. Although the degradation in small signal modulation is reported above this critical feedback level, transmission operation with available eye diagram under higher feedback is demonstrated. Under 10 Gb s−1 modulation, there is no obvious degradation in eye diagram regarding the eye shape and extinction ratio up to feedback ratio of −8 dB. The higher feedback tolerance of QD laser under large signal modulation is attributed to the impact of gain compression. This high-speed feedback-resistant operation also indicates that QD laser is a promising light source for isolator-free photonic integrated circuits.

Theory of microscopic semiconductor lasers with external optical feedback.

The properties of microscopic semiconductor lasers with external optical feedback are theoretically analysed. The size-dependence of the critical feedback level, at which the laser first becomes unstable, is clarified, showing how the dominant indicator of feedback stability is the gain of the laser, irrespective of size. The impact of increased spontaneous emission β-factors and over-damped operation is evaluated, exposing a diminished phase sensitivity of microscopic lasers, and a trade-off between modulation bandwidth and feedback stability is identified.

Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback

This work investigates the performance of 1.3-μm quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits.

Suppression of Coherence Collapse in Semiconductor Fano Lasers.

We show that semiconductor Fano lasers strongly suppress dynamic instabilities induced by external optical feedback. A comparison with conventional Fabry-Perot lasers shows orders of magnitude improvement in feedback stability and in many cases even total suppression of coherence collapse, which is of major importance for applications in integrated photonics. The laser dynamics are analyzed using a generalization of the Lang-Kobayashi model for semiconductor lasers with external feedback, and an analytical expression for the critical feedback level is derived.

Efficient and Optical Feedback Tolerant Hybrid Laser Design for Silicon Photonics Applications

We present a design of a tunable hybrid laser based on III-V Reflective Semiconductor Optical Amplifier (RSOA) and Silicon Photonics (SiPh) external mirror that represents a good trade off between high Wall-Plug Efficiency (WPE) and high tolerance to optical feedback caused by unwanted back reflections from the rest of the SiPh chip. The sensitivity to optical feedback of different configurations, an important issue in many SiPh applications, is evaluated through the calculation of the critical feedback level based on an effective Lang-Kobayashi model and the main results are validated through numerical simulations of laser dynamics. We conclude that hybrid lasers with long effective external cavities typically designed to reduce the laser linewidth can be also exploited to improve the tolerance to spurious optical feedback.

Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration

This work investigates the dynamic and nonlinear properties of quantum dot (QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αH factor, is featured through a thermally insensitive method analyzing the residual side-mode dynamics under optical injection locking. The αH at threshold is found as low as 0.32. Then, the nonlinear gain is investigated from the gain compression factor viewpoint. The latter is found higher for epitaxial QD lasers on silicon than that in heterogeneously integrated quantum well (QW) devices on silicon. Despite that, the power dependence of the αH does not lead to a large increase of the chirp coefficient above the laser’s threshold at higher bias. This effect is confirmed from an analytical model and attributed to the strong lasing emission of the ground-state transition, which transforms into a critical feedback level as high as −6.5 dB, which is ∼19 dB higher than a comparable QW laser. Finally, the intensity noise analysis confirms that QD lasers are overdamped oscillators with damping frequencies as large as 33 GHz. Altogether, these features contribute to fundamentally enhancing the reflection insensitivity of the epitaxial QD lasers. This last feature is unveiled by the 10 Gbit/s error-free high-speed transmission experiments. Overall, we believe that this work is of paramount importance for future isolator-free photonics technologies and cost-efficient high-speed transmission systems.

Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55- μ m InP-based InAs quantum dash lasers

This work investigates the effect of the polarization anisotropy on the linewidth enhancement factor and the reflection sensitivity of InAs/InP quantum dash semiconductor lasers. The results show that the small linewidth enhancement factor and high stability against external optical feedback are obtained for nanostructures oriented perpendicular to the cavity axis as opposed to those oriented parallel to the cavity axis. Effective simulations on the critical feedback level of these two lasers are also in agreement with experimental results. Such anisotropy is attributed to the polarization dependence of the transition matrix element in these quantum nanostructures.

Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

This work reports on a systematic investigation of the influence of optical feedback in InAs/GaAs quantum dot lasers epitaxially grown on silicon. The boundaries associated to the onset of the critical feedback level corresponding to the first Hopf bifurcation are extracted at different bias conditions with respect to the onset of the first excited state transition. Overall, results show that quantum dot lasers directly grown onto silicon are much more resistant to optical feedback than quantum well lasers, mostly resulting from a small linewidth enhancement factor of high-quality quantum dot material. However, results also unveil that the onset of the critical feedback level strongly depends on the excited-to-ground-state ratio, hence a figure of merit showing that a small ratio of the excited-to-ground-state lasing thresholds is not beneficial for maintaining a high degree of stability. This work brings further insights in the understanding of quantum dot laser physics and is useful for designing feedback resistant lasers for isolator-free transmission in metro, access, and data center optical networks, as well as for integrated photonics.

High Optical-Feedback Tolerance of Distributed Reflector Lasers With Wirelike Active Regions for Isolator-Free Operation

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The optical-feedback tolerance of distributed reflector laser with a wirelike distributed feedback section and a distributed Bragg reflector section was investigated. A very high critical feedback level of <formula formulatype="inline"> <tex Notation="TeX">${-}$</tex></formula>12.5 dB and low relative intensity noise were confirmed. Isolator-free 2.5-Gb/s to 10-km transmissions were demonstrated under <formula formulatype="inline"><tex Notation="TeX">${-}$</tex></formula>13.5-dB optical back-reflection with a power penalty of 2 dB. </para>

Feedback Sensitivity and Coherence Collapse Threshold of Semiconductor DFB Lasers With Complex Structures

A general method for evaluating the feedback sensitivity of semiconductor lasers is proposed based on Green's functions approach. The rate equations derived in this paper generalize works already published to any type of laser cavities such as those with axially varying parameters. The variation of the lasing frequency occurring under external optical feedback is then used to predict the coherence collapse threshold. The approach is validated for conventional DFB lasers by comparing the calculated feedback sensitivity with those obtained from analytical expressions. Both feedback sensitivity and coherence collapse thresholds are then calculated and analyzed for DFB lasers with a chirped grating. A remarkable agreement on the critical feedback level between simulations and measurements is obtained for all the lasers under study.

Feedback-induced chaos and intensity-noise enhancement in vertical-cavity surface-emitting lasers

We investigate numerically the effects of optical feedback on the intensity noise of vertical-cavity surface-emitting lasers (VCSEL’s) under single-mode and two-mode operations. Our model includes transverse effects such as carrier diffusion and spatial hole-burning. Results indicate that the relative-intensity noise is relatively unaffected at low feedback levels except for a narrowing and enhancement of the relaxation-oscillation peak. At higher feedback levels, the VCSEL ceases to operate continuously, and its output becomes chaotic, following a period-doubling or a quasi-periodic route depending on the feedback level and the length of the external cavity. In the chaotic regime, the relative-intensity noise is enhanced by more than 20 dB. The critical feedback level at which the VCSEL output becomes chaotic depends on whether the laser operates in one or two transverse modes and how strongly these transverse modes are coupled through spatial hole-burning.

A simple analytic expression for the stable operation range of laser diodes with optical feedback

A simple analytic expression for the critical feedback level, above which a semiconductor laser becomes unstable, is derived. This tolerable feedback level increases with increasing damping of the relaxation oscillations. Good agreement is found between the analytic expression and numerical evaluations of the rate equations. >

Nonlinear injection locking dynamics and the onset of coherence collapse in external cavity lasers

A theoretical analysis is presented of the experimentally observed collapse of coherence in semiconductor lasers exposed to moderate optical feedback. A main point in the analysis is, that coherence collapse in the delayed-feedback (DFB) system shows up as bistability in a much simpler model which corresponds to an injection locking system. Based on this, the authors derive a simple analytical expression, valid for DFB as well as Fabry-Perot lasers, for the critical feedback level at which coherence collapse sets in. Simulations of the nonlinear injection locking model reveal the presence of complicated nonlinear dynamics with period-doubling bifurcations and coexisting attractors even inside what is normally denoted the stable locking range.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Mode selection and stability of a semiconductor laser with weak optical feedback

The authors present measurements that show that a semiconductor laser with weak optical feedback oscillates in the external-cavity mode with the narrowest linewidth rather than the mode with minimum threshold gain. A frequency fluctuation model that explains this narrowest linewidth operation is proposed. This model also correctly predicts mode-hopping frequencies. It is shown that the frequency span of the external-cavity modes determines the critical feedback level that causes coherence collapse.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>