Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

Abstract

This work reports on a systematic investigation of the influence of optical feedback in InAs/GaAs quantum dot lasers epitaxially grown on silicon. The boundaries associated to the onset of the critical feedback level corresponding to the first Hopf bifurcation are extracted at different bias conditions with respect to the onset of the first excited state transition. Overall, results show that quantum dot lasers directly grown onto silicon are much more resistant to optical feedback than quantum well lasers, mostly resulting from a small linewidth enhancement factor of high-quality quantum dot material. However, results also unveil that the onset of the critical feedback level strongly depends on the excited-to-ground-state ratio, hence a figure of merit showing that a small ratio of the excited-to-ground-state lasing thresholds is not beneficial for maintaining a high degree of stability. This work brings further insights in the understanding of quantum dot laser physics and is useful for designing feedback resistant lasers for isolator-free transmission in metro, access, and data center optical networks, as well as for integrated photonics.