Field-effect Transistor Configuration Research Articles

Role of defects in the sensing mechanism of CNTFET gas sensors

In nanotechnology, understanding the effect of interfaces and defects becomes critically important in determining a material's properties and device performance. Many one-dimensional and two-dimensional materials exhibit excellent physical, electrical, thermal, and optical properties, making them highly desirable for a wide array of applications. However, their low dimensionality also means their performance can be susceptible to defects in the material and the interfaces they form with other device components. Carbon nanotubes are often used in sensing applications, typically, in a field-effect transistor configuration (CNTFET). The interface between the contact electrode metal and the nanotube forms a Schottky barrier, which plays an important role in both transistor and sensor characteristics. Modifications to this interface by the environment can modulate the barrier and produce a change in device characteristics. Transistor operation can also be modified by the presence of defects in the carbon nanotube sidewall structure. This paper explores how defects in single-wall carbon nanotubes can affect the sensing mechanism of CNTFET gas sensing devices. Gas exposure measurements were performed on as-grown near pristine (low defect) nanotube devices and compared with plasma irradiated, highly defective nanotube devices. By utilizing selective passivation to isolate structural components that contribute to the sensing mechanism, the study shows that the presence of defects, and their relative densities, has a critical role in gas sensing performance. Recognizing the presence of these defects, even in as-grown nanotubes, can help reconcile seemingly contradictory results in the literature regarding the gas sensing mechanism. This work represents an important step toward understanding the effect of both interfaces and defects for carbon nanotube sensor development.

Anisotropic band structure of TiS3 nanoribbon revealed by polarized photocurrent spectroscopy

A re-discovered member of the layered material family, Titanium Trisulfide (TiS3), has attracted intense research interest recently for the possibility of realizing an exciton insulator in the monolayer limit. However, due to their quasi-one-dimensional nature, thin TiS3 flakes are typically in the form of nanoribbons that are challenging to characterize by optical absorption spectra, due to their small cross section. Here, we employ a sensitive photocurrent spectroscopy technique to probe the absorption of a thin TiS3 nanoribbon in a field-effect transistor configuration. We have found a significant modification of the band structure of the thin TiS3 nanoribbon, compared to its bulk counterpart. In addition, the polarization-dependent photocurrent spectra of thin TiS3 nanoribbons exhibit greatly enhanced anisotropy compared to that of a thick TiS3 device. The atomically thin TiS3 flake, thus, not only provides an exciting platform for investigating many-body physics but also enables anisotropic quantum optoelectronics.

Faradaic effects in electrochemically gated graphene sensors in the presence of redox active molecules

Field-effect transistors (FETs) based on graphene are promising devices for the direct sensing of a range of analytes in solution. We show here that the presence of redox active molecules in the analyte solution leads to the occurrence of heterogeneous electron transfer with graphene generating a Faradaic current (electron transfer) in a FET configuration resulting in shifts of the Dirac point. Such a shift occurs if the Faradaic current is significantly high, e.g. due to a large graphene area. Furthermore, the redox shift based on the Faradaic current, reminiscent of a doping-like effect, is found to be non-Nernstian and dependent on parameters known from electrode kinetics in potentiodynamic methods, such as the electrode area, the standard potential of the redox probes and the scan rate of the gate voltage modulation. This behavior clearly differentiates this effect from other transduction mechanisms based on electrostatic interactions or molecular charge transfer doping effects, which are usually behind a shift of the Dirac point. These observations suggest that large-area unmodified/pristine graphene in field-effect sensors behaves as a non-polarized electrode in liquid. Strategies for ensuring a polarized interface are discussed.

Carboxylic Acid‐Functionalized Conjugated Polymer Promoting Diminished Electronic Drift and Amplified Proton Sensitivity of Remote Gates Compared to Nonpolar Surfaces in Aqueous Media

AbstractA systematic analysis is used to understand electrical drift occurring in field‐effect transistor (FET) dissolved‐analyte sensors by investigating its dependence on electrode surface‐solution combinations in a remote‐gate (RG) FET configuration. Water at pH 7 and neat acetonitrile, having different dipoles and polarizabilities, are applied to the RG surface of indium tin oxide, SiO2, hexamethyldisilazane‐modified SiO2, polystyrene, poly(styrene‐co‐acrylic acid), poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), and poly [3‐(3‐carboxypropyl)thiophene‐2,5‐diyl] (PT‐COOH). It is discovered that in some cases a slow reorientation of dipoles at the interface induced by gate electric fields causes severe drift and hysteresis because of induced interface potential changes. Conductive and charged P3HT and PT‐COOH increase electrochemical stability by promoting fast surface equilibrations. It is also demonstrated that pH sensitivity of P3HT (17 mV per pH) is an indication of proton doping. PT‐COOH shows further enhanced pH sensitivity (30 mV per pH). This combination of electrochemical stability and pH response in PT‐COOH are proposed as advantageous for polymer‐based biosensors.

Graphene based field-effect transistor biosensors functionalized using gas-phase synthesized gold nanoparticles

Research has focused on graphene for developing the next generation of label-free biosensors, capable of highly sensitive and specific detection of DNA or other biomolecules. The binding of charged analytes to the one-atom thick layer of graphene can greatly affect its electronic properties. However, graphene is highly chemically inert, thus surface functionalization through chemical treatment is typically necessary to immobilize receptors of the target biological analyte on the graphene. In this work, we use gas-phase synthesized gold nanoparticles (Au NPs) to functionalize and bind a DNA aptamer to the graphene surface. The graphene is employed in a liquid gated field-effect transistor (FET) configuration to detect the hybridization of the complementary DNA strand, as well as the protein streptavidin, at attomolar level (aM, 10−18 mol L−1). The sensor shows a high dynamic detecting range from aM to picomolar (pM) levels (10-18 to 10-12 mol L−1), can discriminate between a complementary strand and a single nucleotide polymorphism (SNP) containing strand, and achieves a detection limit as low as 15 aM. The high detection limit suggests that decorating biosensors with Au NPs synthesized from magnetron sputtering inert gas condensing technique is a promising method for biosensor functionalization, particularly for larger-area sensors that employ two-dimensional materials such as graphene.

Controlled doping of graphene by impurity charge compensation via a polarized ferroelectric polymer

A simple technique of doping graphene by manipulating adsorbed impurity charges is presented. Using a field effect transistor configuration, controlled polarization of a ferroelectric polymer gate is used to compensate and neutralize charges of one type. The uncompensated charges of the opposite type then dope graphene. Both n- and p-type doping are possible by this method, which is non-destructive and reversible. We observe a change in n-type dopant concentration of 8 × 1012 cm−2 and a change in electron mobility of 650%. The electron and hole mobilities are inversely proportional to the impurity concentration, as predicted by theory. Selective doping of graphene can be achieved using this method by patterning gate electrodes at strategic locations and programming them independently. Such charge control without introducing hard junctions, therefore, permits seamless integration of multiple devices on a continuous graphene film.

Enhanced and unconventional responses in chemiresistive sensing devices for nitrogen dioxide and ammonia from carboxylated alkylthiophene polymers

A carboxylated thiophene polymer-based chemiresistive device in a field-effect transistor (FET) configuration with unusual and enhanced responses to the widespread pollutants nitrogen dioxide (NO2) and ammonia (NH3) is described.

Electrical Methods to Elucidate Charge Transport in Hybrid Perovskites Thin Films and Devices.

The panchromatic light absorption and excellent charge carrier transport properties in organo lead halide perovskites allowed to achieve an unprecedented power conversion efficiency in excess of 25 % for thin film photovoltaics fabrication. To understand the underlying phenomena, various comprehensive set of optical and electrical techniques have been employed to investigate the charge carrier dynamics in such devices. In this perspective, we aim to summarize the electrical transport properties of perovskite thin films by using (i) impedance spectroscopy (IS), (ii) space charge limited current (SCLC), (iii) field-effect transistors (FETs) and (iv) time-of-flight (TOF) methods. We have deliberated various equivalent circuit used to model the perovskite solar cells by means of IS. The SCLC technique provide vital electrical parameters such as mobility, activation energy, traps density and distribution, carrier concentration, density of states, etc. The TOF technique measures mobility as a primary parameter while the FETs configuration provide a valuable insight into the in-plane charge transport in perovskites thin films. We believe that these notable understanding will provide insights into charge carrier dynamics in perovskite materials and devices.

Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules.

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors.

Rather than the internal genome nucleic acids, the biomolecules on the surface of the influenza virus itself should be detected for a more exact and rapid point-of-care yes/no decision for influenza virus-induced infectious diseases. This work demonstrates the ultrasensitive electrical detection of the HA1 domain of hemagglutinin (HA), a representative viral surface protein of the influenza virus, using the top-down complementary metal oxide semiconductor (CMOS) processed silicon nanowire (SiNW) field-effect transistor (FET) configuration. Cytidine-5′-monophospho-N-acetylneuraminic acid (CMP-NANA) was employed as a probe that specifically binds both to the aldehyde self-aligned monolayer on the SiNWs and to HA1 simultaneously. CMP-NANA was serially combined with two kinds of linkers, namely 3-aminopropyltriethoxysilane and glutaraldehyde. The surface functionalization used was verified using the purification of glutathione S-transferase-tagged HA1, contact angle measurement, enzyme-linked immunosorbent assay test, and isoelectric focusing analysis. The proposed functionalized SiNW FET showed high sensitivities of the threshold voltage shift (ΔVT) ~51 mV/pH and the ΔVT = 112 mV (63 mV/decade) with an ultralow detectable range of 1 fM of target protein HA1.

Nonvolatile MoTe2 p–n Diodes for Optoelectronic Logics

Construction of atomically thin p-n junctions helps to build highly compact electronic and photonic devices for on-chip optoelectronic applications. In this work, lateral nonvolatile MoTe2 p-n diodes are constructed on the basis of the MoTe2/h-BN/graphene semifloating gate field-effect transistor (SFG-FET) configuration. The achieved diodes exhibit excellent rectifying behaviors (rectification ratio up to 8 × 103) and typical photovoltaic properties (with power conversion efficiency of 0.5%). Through manipulating the polarity of the stored charges in the semifloating gate, such rectifying behaviors and photovoltaic properties can be erased, resulting in a high conduction state ( n + -n junction). Such erasable and programmable behaviors further enable us to develop logic optoelectronic devices, realizing the switching of the device between different power conversion states and functional AND and OR optical logic gates. We believe that the achieved MoTe2-based SFG-FET devices with interesting logic optoelectronic functions will enrich the modern photoelectrical interconnected circuits.

A tricolour photodetecting memory device based on lead sulfide colloidal quantum dots floating gate

Phototunable nonvolatile organic memory offers a simple and smart strategy to detect and record optical signals, which provides a promising potential pathway towards the realization of low-cost and highly integrated imaging system. Here, a tricolor photodetecting memory device based on organic field-effect transistor configuration has been developed by employing lead sulfide (PbS) colloidal quantum dots (CQDs) as floating gate. The device shows a large memory window of 18.6 V due to the high charge storage capability of PbS CQDs. When the pre-programmed memory device is illuminated by light irradiation with different wavelengths (blue light λ = 420 nm, green light λ = 550 nm, and red light λ = 650 nm), the transfer curve shifts to a more positive direction as the wavelength decreases, resulting in a higher current when read at a fixed reading voltage, which can be applied in tricolor photodetection. The photodetecting memory mechanism is correlated with the charge transfer between PbS CQDs and pentacene and the charge storage property of PbS CQDs.

Lateral scaling and positioning effects of top-gate electrodes on single-molecule field-effect transistors

Molecular electronics aims at integrating controllable molecular devices into circuits or machines to realize certain functions. According to device configuration, molecular field-effect transistors with top-gate electrodes have great advantages for integration. Nevertheless, from technical aspects, it is difficult to control lateral scale and position of a top-gate electrode precisely. Therefore, one problem arises in how lateral scaling and positioning effects of a top-gate electrode affect device performance. To solve this problem, the electronic transport properties of single-molecule field-effect transistor configurations modulated by a series of partial-scale top-gate electrodes with different lateral scales and positions are studied by using non-equilibrium Green’s function in combination with density functional theory, and compared with those of the full gate electrode (can be considered as a bottom gate electrode). The results show that lateral scaling and positioning effects indeed have a great impact on electronic transport properties of single-molecule field-effect transistor configurations. For -saturated 1,12-dodecanedithiol devices, larger lateral scale of a partial-scale top-gate electrode obtains larger amplification coefficient (ratio of device conductances with/without a gate electrode), and even larger than that of the full gate electrode. While lateral positioning effect has little influence on this device. For -conjugated 1,3,5,7,9,11-dodehexaene-1,12-dithiol devices, performance of a partial-scale top-gate electrode mainly depends on locations of its two edges, i.e. the number of bonds that it breaks. These results will provide theoretical directions in device designing and manufacturing in the future.

Improved pH Sensitivity and Reliability for Extended Gate Field-Effect Transistor Sensors Using High-k Sensing Membranes.

In this study, we fabricated extended-gate (EG) field-effect transistor (FET) pH sensors with dualgate (DG) structures, using a range of dielectric sensing membranes (SiO₂, Si₃N₄, HfO₂ and Ta₂O5) to vary their sensitivity. The fabricated EGFETs consisted of a silicon-on-insulator (SOI)-based metal-oxide semiconductor field-effect transistor (MOSFET) transducer and an EG sensor. We amplified the sensitivity of the device far beyond the Nernst limit (59 mV/pH), which is the theoretical maximum of conventional ion-selective FET (ISFET) sensing, by applying capacitive coupling. Among the evaluated dielectric sensing membranes, we obtained the highest sensitivity (478 mV/pH), low hysteresis (100.2 mV) and drift rate (24.6 mV/h) from the pH sensor with a Ta₂O5 membrane. Hence, we expect DG FET configurations using Ta₂O5 films as EG sensing membranes to be useful for high performance biosensor applications, as they satisfy the requirements for sensitivity, stability and reliability.

PEDOT-PSS nanoribbon and cast film field effect transistors with ferroelectric gating

Poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) – PEDOT-PSS was electro-spun to produce high aspect ratio nano-ribbons. Individual nano-ribbons and cast films of varying thicknesses were electrically characterized in a field effect transistor configuration with ferroelectric poly(vinylidene fluoride-trifluoroethylene)-PVDF-TrFE as the gate insulator. The devices showed p-type behavior consistent with hole transport, and a ferroelectric memory effect. Thinner films exhibited stronger field effect compared to thicker films. As the thicknesses increased, relative changes in the gate induced currents decreased, while the threshold voltage and memory window width increased. The mobility was ∼0.5 cm2/V-s and the induced charge density was 2.3 x 1018/cm2 for the 10nm film device. A simple application of non-volatile charge storage was demonstrated via the use of ± 50V erase/write pulses applied to the gate. The device operated successfully with no degradation in the write/erase functionality, and is the first demonstrating a ferroelectric field effect in PEDOT-PSS thin films.

Concurrent Optical Gain Optimization and Electrical Tuning in Novel Oligomer:Polymer Blends with Yellow-Green Laser Emission.

Electrically pumped organic lasing requires the integration of electrodes contact into the laser cavity in an organic light‐emitting diode (OLED) or organic field effect transistor configuration to enable charge injection. Efficient and balanced carrier injection requires in turn alignment of the energy levels of the organic active layers with the Fermi levels of the cathode and anode. This can be achieved through chemical substitution with specific aromatic functional groups, although paying the price for a substantial (and often detrimental) change in the emission and light amplifying properties of the organic gain medium. Here, using host–guest energy transfer mixtures with hosts bearing a systematic and gradual shift in molecular orbitals is proposed, which reduces the amplified spontaneous emission (ASE) threshold of the organic gain medium significantly while leaving the peak emission unaffected. By virtue of the low guest doping required for complete host‐to‐guest energy transfer, the injection levels in the blends are attributed to the host whereas the gain properties solely depend on the guest. It is demonstrated that the ASE peak and thresholds of blends with different hosts do not differ while the current efficiency of OLEDs devices is deeply influenced by molecular orbital tuning of the hosts.

Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

Towards to the development of THz detectors based on carbon nanostructures

Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.

Synergetic improvements of sensitivity and specificity of nanowire field effect transistor gene chip by designing neutralized DNA as probe

Neutral DNA analogs as probes for the detection of target oligomers on the biosensors based on the field-effect transistor (FET) configuration feature advantages in the enhancement of sensitivity and signal-to-noise ratio. Herein, we used phosphate-methylated nucleotides to synthesize two partially neutralized chimeric DNA products and a fully neutralized DNA sequence and adopted a regular DNA oligomer as probes on the polycrystalline silicon nanowire (NW) FET devices. The sequences of two neutralized chimeric DNAs close to the 5′ end were alternately modified with the phosphate-methylated nucleotides, and all probes were immobilized via their 5′ end on the NW surface. The non-specific-to-specific binding ratio indicated that the two 5′-end partially neutralized chimeric DNAs featured better performance than the regular and fully neutralized DNA oligomers. The partially neutralized probe design reduces the ionic strength needed for hybridization and increases the Debye length of detection, thus promoting the detection sensitivity of FET and achieving the limit of detection of 0.1 fM. By using an appropriate probe design, applying DNA oligomers with embedded phosphate-methylated nucleotides in the FET biosensors is a promising way for gene detection with high sensitivity and specificity.

Room-Temperature Single-Photon Detector Based on Single Nanowire.

Single-photon detectors that can resolve photon number play a key role in advanced quantum information technologies. Despite significant progress in improving conventional photon-counting detectors and developing novel device concepts, single-photon detectors that are capable of distinguishing incident photon number at room temperature are still very limited. We demonstrate a room-temperature photon-number-resolving detector by integrating a field-effect transistor configuration with core/shell-like nanowires. The shell serves as a photosensitive gate, shielding negative back-gated voltage, and leads to a persistent photocurrent. At room temperature, our detector is demonstrated to identify 1, 2, and 3 photon-number states with a confidence of >82%. The detection efficiency is determined to be 23%, and the dark count rate is 1.87 × 10-3 Hz. Importantly, benefiting from the anisotropic nature of 1D nanowires, the detector shows an intrinsic photon-polarization selection, which distinguishes itself from existing intensity single-photon detectors. The unique performance for the single-photon detectors based on single nanowire demonstrates the great potential for future single-photon detection applications.