Abstract
Rather than the internal genome nucleic acids, the biomolecules on the surface of the influenza virus itself should be detected for a more exact and rapid point-of-care yes/no decision for influenza virus-induced infectious diseases. This work demonstrates the ultrasensitive electrical detection of the HA1 domain of hemagglutinin (HA), a representative viral surface protein of the influenza virus, using the top-down complementary metal oxide semiconductor (CMOS) processed silicon nanowire (SiNW) field-effect transistor (FET) configuration. Cytidine-5′-monophospho-N-acetylneuraminic acid (CMP-NANA) was employed as a probe that specifically binds both to the aldehyde self-aligned monolayer on the SiNWs and to HA1 simultaneously. CMP-NANA was serially combined with two kinds of linkers, namely 3-aminopropyltriethoxysilane and glutaraldehyde. The surface functionalization used was verified using the purification of glutathione S-transferase-tagged HA1, contact angle measurement, enzyme-linked immunosorbent assay test, and isoelectric focusing analysis. The proposed functionalized SiNW FET showed high sensitivities of the threshold voltage shift (ΔVT) ~51 mV/pH and the ΔVT = 112 mV (63 mV/decade) with an ultralow detectable range of 1 fM of target protein HA1.
Highlights
Swine flu (H1N1), which is swan-originated and occurred in Mexico in 2009, has caused more than 17,000 cumulative deaths worldwide [1]
We report the electrical and ultrahigh sensitive detection of HA1 using silicon nanowire (SiNW) field-effect transistor (FET) fabricated by a complementary metal oxide semiconductor (CMOS)-compatible process
This is the first demonstration of electrical detection of the HA1 domain in HA, the viral surface protein of the influenza virus, using a top-down SiNW-based approach (Figure 1c)
Summary
Swine flu (H1N1), which is swan-originated and occurred in Mexico in 2009, has caused more than 17,000 cumulative deaths worldwide [1]. As are is based well known, FET‐based electrical sensing (FETs) configurations with silicon nanowires (SiNWs), carbon nanotubes, AlGaN/GaN heterostructure, biomolecules (including viruses) achieves faster detection than other methods [6]. The HA1 domain contains sialic acid binding sites, and is well known to be essential for viral infection of host cells Inspired by these developments, we report the electrical and ultrahigh sensitive detection of HA1 using SiNW FETs fabricated by a complementary metal oxide semiconductor (CMOS)-compatible process. We report the electrical and ultrahigh sensitive detection of HA1 using SiNW FETs fabricated by a complementary metal oxide semiconductor (CMOS)-compatible process This is the first demonstration of electrical detection of the HA1 domain in HA, the viral surface protein of the influenza virus, using a top-down SiNW-based approach (Figure 1c). The surface functionalization with the effective probe and the intermediate linker, such as cytidine-50 -monophospho-N-acetylneuraminic acid (CMP-NANA) and glutaraldehyde (GA), and the high surface-to-volume ratio of the SiNWs revealed an ultrahigh sensitive detection (1 fM) of HA1 with a threshold voltage shift of 112 mV (63 mV/dec)
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