Rupture Of Conductive Filaments Research Articles

Resistive Switching Characteristics of MnOx-based ReRAM

Thin film of MnOx was fabricated in the form of Pt/MnOx/Pt and Pt/MnOx/Al and both devices exhibited reversible resistive switching behaviors under sweeping voltage. The resistive switching was believed to be due to the formation and rupture of conductive filaments. The device of Pt/MnOx/Al showed a better endurance performance than Pt/MnOx/Pt, its high/low resistance ratio was over three orders and the state retention was reliable. All of the results suggested that the Pt/MnOx/Al has a potentiality for nonvolatile resistance memory application.

Resistive switching characteristics of MnOx-based ReRAM

The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal–insulator–metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnOx/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.