Abstract
Thin film of MnOx was fabricated in the form of Pt/MnOx/Pt and Pt/MnOx/Al and both devices exhibited reversible resistive switching behaviors under sweeping voltage. The resistive switching was believed to be due to the formation and rupture of conductive filaments. The device of Pt/MnOx/Al showed a better endurance performance than Pt/MnOx/Pt, its high/low resistance ratio was over three orders and the state retention was reliable. All of the results suggested that the Pt/MnOx/Al has a potentiality for nonvolatile resistance memory application.
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