Abstract
The resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications. The devices in the form of metal–insulator–metal structure exhibited reversible resistive switching behaviour under both sweeping voltages and voltage pulses. Formation and rupture of conductive filaments were proposed to explain the resistive switching. When Al was used as the top electrode instead of Pt, the device had a better endurance performance. Additionally, the Pt/MnOx/Al device showed fast switching speed and long retention ability. The experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.
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