Results. In this letter we have studied a-Si:H layer of 200 nm thickness which has been prepared by rf PECVD (13.56 MHz, silane dilution in hydrogen 8%) on Corning 7059 glass coated by indium–tin oxide bottom electrode. Prior to the laser crystallization, hydrogen has been effused by heating up the sample to 450°C in vacuum for one hour. The sample has been crystallized in air by a single pulse of frequency doubled Nd:YAG laser with wavelength 532 nm and energy density 80 mJ/cm. Primary laser beam was split into two beams forming an interference pattern with 5.3 μm period. This resulted in creation of parallel stripes of amorphous and microcrystalline silicon. Fig. 1a shows the surface topography of the laser patterned layer as observed by AFM (Atomic Force Microscope). Obviously it is not easy to distinguish a-Si:H and μc-Si:H parts. We can visualize μc-Si:H parts by selective etching [1,2] but this is an additional technological step which can modify the laser induced patterns. In order to understand details of the laser patterning we need a tool which would be able to distinguish between a-Si:H and μc-Si:H parts. Because the conductivity of μc-Si:H is several orders of magnitude higher than that of a-Si:H, we have decided to measure in parallel to standard AFM picture the local conductivity through the studied layer. For local conductivity characterization, Omicron UHV AFM/STM stage has been employed and operated in contact AFM mode using conductive cantilever made of highly doped silicon coated with platinum. Image of the surface morphology has been derived from deflections of the cantilever scanning the profile of constant force. In the constant force regime the cantilever tip is kept in close mechanical and thus also electrical contact with the sample. Local current measurement has been performed simultaneously in so-called spectroscopic mode: in every image point, AFM feedback control was switched off, DC voltage –5 V was applied to the cantilever and the current flowing to the grounded ITO bottom electrode was registered. This method of operation has an advantage of full control over the current measurement timing. Delays before applying the voltage and after switching it off may be specified as well as the time interval over which the current is averaged. In order to overcome transient phenomena and preamplifier instabilities, current was averaged for 640 μs with 500 μs delay after the voltage application. The resulting map of the local current is shown in Fig. 1 b.