Conductive Atomic Force Microscopy Studies Research Articles

Electrostimulation and Nanomanipulation of Two-Dimensional MoO3-x Layers Grown on Graphite

Molybdenum trioxide shows many attractive properties, such as a wide electronic band gap and a high relative permittivity. Monolayers of this material are particularly important, as they offer new avenues in optoelectronic devices, e.g., to alter the properties of graphene electrodes. Nanoscale electrical characterization is essential for potential applications of monolayer molybdenum trioxide. We present a conductive atomic force microscopy study of an epitaxially grown 2D molybdenum oxide layer on a graphene-like substrate, such as highly oriented pyrolytic graphite (HOPG). Monolayers were also investigated using X-ray photoelectron spectroscopy, atomic force microscopy (semi-contact and contact mode), Kelvin probe force microscopy, and lateral force microscopy. We demonstrate mobility of the unpinned island under slight mechanical stress as well as shaping and detachment of the material with applied electrical stimulation. Non-stoichiometric MoO3-x monolayers show heterogeneous behavior in terms of electrical conductivity, which can be related to the crystalline domains and defects in the structure. Different regions show various I–V characteristics, which are correlated with their susceptibility to electrodegradation. In this work, we cover the existing gap regarding nanomanipulation and electrical nanocharacterization of the MoO3 monolayer.

Solid Platinum Nanoprobes for Highly Reliable Conductive Atomic Force Microscopy.

Conductive atomic force microscopy (CAFM) is a powerful technique to investigate electrical and mechanical properties of materials and devices at the nanoscale. However, its main challenge is the reliability of the probe tips and their interaction with the samples. The most common probe tips used in CAFM studies are made of Si coated with a thin (∼20 nm) film of Pt or Pt-rich alloys (such as Pt/Ir), but this can degrade fast due to high current densities (>102A/cm2) and mechanical frictions. Si tips coated with doped diamond and solid doped diamond tips are more durable, but they are significantly more expensive and their high stiffness often damages the surface of most samples. One growing alternative is to use solid Pt tips, which have an intermediate price and are expected to be more durable than metal-coated silicon tips. However, a thorough characterization of the performance of solid Pt probes for CAFM research has never been reported. In this article, we characterize the performance of solid Pt probes for nanoelectronics research by performing various types of experiments and compare them to Pt/Ir-coated Si probes. Our results indicate that solid Pt probes exhibit a lateral resolution that is very similar to that of Pt/Ir-coated Si probes but with the big advantage of a much longer lifetime. Moreover, the probe-to-probe deviation of the electrical data collected is small. The use of solid Pt probes can help researchers to enhance the reliability of their CAFM experiments.

Structural, Optical and Mechanical Properties of Nanocrystalline Molybdenum Thin Films Deposited under Variable Substrate Temperature.

Molybdenum (Mo), which is one among the refractory metals, is a promising material with a wide variety of technological applications in microelectronics, optoelectronics, and energy conversion and storage. However, understanding the structure–property correlation and optimization at the nanoscale dimension is quite important to meet the requirements of the emerging nanoelectronics and nanophotonics. In this context, we focused our efforts to derive a comprehensive understanding of the nanoscale structure, phase, and electronic properties of nanocrystalline Mo films with variable microstructure and grain size. Molybdenum films were deposited under varying temperature (25–500 °C), which resulted in Mo films with variable grain size of 9–22 nm. The grazing incidence X-ray diffraction analyses indicate the (110) preferred growth behavior the Mo films, though there is a marked decrease in hardness and elastic modulus values. In particular, there is a sizable difference in maximum and minimum elastic modulus values; the elastic modulus decreased from ~460 to 260–280 GPa with increasing substrate temperature from 25–500 °C. The plasticity index and wear resistance index values show a dramatic change with substrate temperature and grain size. Additionally, the optical properties of the nanocrystalline Mo films evaluated by spectroscopic ellipsometry indicate a marked dependence on the growth temperature and grain size. This dependence on grain size variation was particularly notable for the refractive index where Mo films with lower grain size fell in a range between ~2.75–3.75 across the measured wavelength as opposed to the range of 1.5–2.5 for samples deposited at temperatures of 400–500 °C, where the grain size is relatively higher. The conductive atomic force microscopy (AFM) studies indicate a direct correlation with grain size variation and grain versus grain boundary conduction; the trend noted was improved electrical conductivity of the Mo films in correlation with increasing grain size. The combined ellipsometry and conductive AFM studies allowed us to optimize the structure–property correlation in nanocrystalline Mo films for application in electronics and optoelectronics.

Nitrogen-Incorporated Boron-Doped Nanocrystalline Diamond Nanowires for Microplasma Illumination.

The origin of nitrogen-incorporated boron-doped nanocrystalline diamond (NB-NCD) nanowires as a function of substrate temperature (Ts) in H2/CH4/B2H6/N2 reactant gases is systematically addressed. Because of Ts, there is a drastic modification in the dimensional structure and microstructure and hence in the several properties of the NB-NCD films. The NB-NCD films grown at low Ts (400 °C) contain faceted diamond grains. The morphology changes to nanosized diamond grains for NB-NCD films grown at 550 °C (or 700 °C). Interestingly, the NB-NCD films grown at 850 °C possess one-dimensional nanowire-like morphological grains. These nanowire-like NB-NCD films possess the co-existence of the sp3-diamond phase and the sp2-graphitic phase, where diamond nanowires are surrounded by sp2-graphitic phases at grain boundaries. The optical emission spectroscopy studies stated that the CN, BH, and C2 species in the plasma are the main factors for the origin of nanowire-like conducting diamond grains and the materialization of graphitic phases at the grain boundaries. Moreover, conductive atomic force microscopy studies reveal that the NB-NCD films grown at 850 °C show a large number of emission sites from the grains and the grain boundaries. While boron doping improved the electrical conductivity of the NCD grains, the nitrogen incorporation eased the generation of graphitic phases at the grain boundaries that afford conducting channels for the electrons, thus achieving a high electrical conductivity for the NB-NCD films grown at 850 °C. The microplasma devices using these nanowire-like NB-NCD films as cathodes display superior plasma illumination properties with a threshold field of 3300 V/μm and plasma current density of 1.04 mA/cm2 with a supplied voltage of 520 V and a lifetime stability of 520 min. The outstanding plasma illumination characteristics of these conducting nanowire-like NB-NCD films make them appropriate as cathodes and pave the way for the utilization of these materials in various microplasma device applications.

Conductivity Modulation of 3D‐Printed Shellular Electrodes through Embedding Nanocrystalline Intermetallics into Amorphous Matrix for Ultrahigh‐Current Oxygen Evolution

AbstractScaling up commercial hydrogen production by water electrolysis requires efficient oxygen evolution reaction (OER) electrodes that can deliver large current densities (more than 500 mA cm−2) at low overpotentials. Here, a highly active and conductive shell‐based cellular (Shellular) electrode is developed through a strategy of embedding nanocrystalline Ni3Nb intermetallics into an amorphous NiFe‐OOH matrix. The tailor‐made laser remelting process enables the dispersive precipitation of corrosion‐resistant nanocrystalline Ni3Nb in large numbers. After in situ electrochemical activation in the self‐developed growth‐mode‐control electrolyte, the amorphous NiFe‐OOH nanosheets and nanocrystalline Ni3Nb are formed on the as‐printed Inconel 718. The conductive atomic force microscopy (C‐AFM) studies and density functional theory (DFT) calculations elucidate that nanocrystalline Ni3Nb can simultaneously enhance the conductivity and activity of the catalyst film. Additionally, a Shellular structure inspired by nature is designed, interestingly, its specific surface area keeps constant with increases in porosity. This design can result in a large surface area and high porosity but with less material cost. Using this electrochemically activated Shellular electrode for OER, a high current density of 1500 mA cm−2 is achieved at a record‐low overpotential of 261 mV with good durability. This development may open the door for large‐scale industrial water electrolysis.

Optimized atomic layer deposition of homogeneous, conductive Al2O3 coatings for high-nickel NCM containing ready-to-use electrodes.

Atomic layer deposition (ALD) derived ultrathin conformal Al2O3 coating has been identified as an effective strategy for enhancing the electrochemical performance of Ni-rich LiNixCoyMnzO2 (NCM; 0 ≤x, y, z < 1) based cathode active materials (CAM) in Li-ion batteries. However, there is still a need to better understand the beneficial effect of ALD derived surface coatings on the performance of NCM based composite cathodes. In this work, we applied and optimized a low-temperature ALD derived Al2O3 coating on a series of Ni-rich NCM-based (NCM622, NCM71.51.5 and NCM811) ready-to-use composite cathodes and investigated the effect of coating on the surface conductivity of the electrode as well as its electrochemical performance. A highly uniform and conformal coating was successfully achieved on all three different cathode compositions under the same ALD deposition conditions. All the coated cathodes were found to exhibit an improved electrochemical performance during long-term cycling under moderate cycling conditions. The improvement in the electrochemical performance after Al2O3 coating is attributed to the suppression of parasitic side reactions between the electrode and the electrolyte during cycling. Furthermore, conductive atomic force microscopy (C-AFM) was performed on the electrode surface as a non-destructive technique to determine the difference in surface morphology and conductivity between uncoated and coated electrodes before and after cycling. C-AFM measurements on pristine cathodes before cycling allow clear separation between the conductive carbon additives and the embedded NCM secondary particles, which show an electrically insulating behavior. More importantly, the measurements reveal that the ALD-derived Al2O3 coating with an optimized thickness is thin enough to retain the original conduction properties of the coated electrodes, while thicker coating layers are insulating resulting in a worse cycling performance. After cycling, the surface conductivity of the coated electrodes is maintained, while in the case of uncoated electrodes the surface conductivity is completely suppressed confirming the formation of an insulating cathode electrolyte interface due to the parasitic side reactions. The results not only show the possibilities of C-AFM as a non-destructive evaluation of the surface properties, but also reveal that an optimized coating, which preserves the conductive properties of the electrode surface, is a crucial factor for stabilising the long-term battery performance.

Local grain-to-grain conductivity in an SnO2–V2O5 nanocomposite ethanol sensor

Nanocrystalline tin oxide—vanadium oxide (SnO2–V2O5) nanocomposite was prepared by the hydrothermal route. Morphological and conductive atomic force microscopy studies were employed to explore the properties of the interface between the grains and grain boundaries of these binary oxides. Detailed analysis of this nanocomposite revealed that the barrier height of 0.512 eV favours a pronounced sensitivity of 63.99% towards 160 ppm of ethanol at room temperature. This might also be due to the decrease in the resistance from 2000 MΩ (individual SnO2) to 830 MΩ (nanocomposite). The synergistic effect, large surface area, greater number of interfaces and more conduction electrons provide a greater number of surface active sites for the nanocomposite. This leads to the nanocomposite showing better sensing performance than the corresponding individual systems.

Improved Field Electron Emission Properties of Phosphorus and Nitrogen Co-Doped Nanocrystalline Diamond Films.

Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P) and nitrogen (N) using microwave plasma-enhanced chemical vapor deposition. While the methane (CH4) and P concentrations are kept constant, the N2 concentration is varied from 0.2% to 2% and supplemented by H2. The composition of the gas mixture is tracked in situ by optical emission spectroscopy. Scanning electron microscopy, atomic force microscopy (AFM), transmission electron microscopy, and Raman spectroscopy are used to provide evidence of the changes in crystal morphology, surface roughness, microstructure, and crystalline quality of the different NCD samples. The FEE results display that the 2% N2 concentration sample had the best FEE properties, viz. the lowest turn-on field value of 14.3 V/µm and the highest current value of 2.7 µA at an applied field of 73.0 V/µm. Conductive AFM studies reveal that the 2% N2 concentration NCD sample showed more emission sites, both from the diamond grains and the grain boundaries surrounding them. While phosphorus doping increased the electrical conductivity of the diamond grains, the incorporation of N2 during growth facilitated the formation of nano-graphitic grain boundary phases that provide conducting pathways for the electrons, thereby improving the FEE properties for the 2% N2 concentrated NCD films.

Controllable Vacancy Redistributions in Embedded Thin Films Under Concentrated Electric Fields

The redistribution and accumulation of oxygen vacancies under electric field underpins both the functionality and degradation of electrical and electrochemical devices comprising oxide layers. Interfacial accumulations of oxygen vacancies form defect dipoles, significantly reduce the breakdown strength, increase the breakdown path area, yet facilitates charge transfer reactions. Confinement of both oxygen vacancy redistributions and their mobility remains critical to preserving function in oxide systems.Here we study one of the most important, yet random transport processes: the redistribution of oxygen vacancies in binary oxides under high local electric fields. The ability to identify or predefine the shape, size, and location of vacancy distributions is critical to controlling interfacial properties of functional oxides. We achieved superior uniformity in HfO2 films by embedding highly-ordered metal nanoisland (NI) arrays to act as electric field concentrators. Embedded films exhibit significant reduction in operating voltages while displaying enhanced uniformity of resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A comparison of the density and distribution of the oxygen vacancies responsible driving filament dynamics is made via combined electrostatic force microscopy (EFM) and conductive atomic force microscopy (c-AFM) studies. Finally, the morphological evolution of conducting vacancy filaments is enabled by three-dimensional (3-D) c-AFM nanotomography and cross-sectional scanning transmission electron microscopy – energy dispersive spectroscopy (STEM-EDS) to provide direct correlations of nanoisland-oxide interactions with overall switching performance. The application of these exciting results to other vacancy-mediated electronic and electrochemical processes will also be discussed.

Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

In this work, the high temperature performance of a diamond Schottky PIN diode is reported in the range of 298-873 K. The diamond diode exhibited an explicit rectification up to 723 K with an excellent forward current density of >3000 A/cm 2 . The stability of the diode was investigated by exposing the sample to high temperature cycles (up to 873 K) for more than 10 times (totaling up to 120 hours), which exhibited no change between the I-V characteristics measured in each cycle. The dependence of ideality factor and Schottky barrier height on temperature along with an extracted Richardson's constant much smaller than the theoretical value (0.0461 A/cm 2 .K 2 ), motivated us to study the possible reason for this anomaly. A modified thermionic emission model following Tung's analysis was used to explain the experimental observations. The model assumed the presence of inhomogeneous Schottky barrier heights leading to a reduced effective area and yielded a Richardson's constant closer to the theoretical value. Conductive atomic force microscopy studies were conducted, which concurred with the electrical data and confirmed the presence of inhomogeneous Schottky barrier heights.

Nanoscale Probing of Magnetic and Electrical Properties of YIG/Si (100) Thin Films Grown by Pulsed Laser Deposition

Integration of yttrium iron garnet (YIG) with Si can bring new avenues for garnet-based complementary metal-oxide semiconductor compatible devices. Herein, investigations on the morphological, electrical, and magnetic properties of postgrowth annealed YIG thin films grown on Si substrate were systematically performed at nanoscale lateral resolution, employing the variants of atomic force microscopy (AFM) viz., conductive AFM (C-AFM), kelvin probe force microscopy, and magnetic force microscopy (MFM). Scanning electron microscopy analysis has revealed the formation of three different regions with varied crystallinity defined as center, dark, and surrounding matrix. Interestingly, AFM topography has not shown any surface variation of the obtained three different regions. Despite no variation in their surface topography, notable changes occur in their local conductivity, surface potential, and microstructure of their magnetic domains. C-AFM studies have shown the formation of conducting channels with three different resistivity regions. The tunneling current was enhanced nearly 50 times from the dark region (~1 pA) to the center region (~50 pA). MFM image analysis reveals the formation of two different magnetically active domains in the form of circles (-0.3°) distributed in a surrounding matrix (+0.3°) with a steep change in their magnetic phase degree. The formation of circular magnetic domains with highly distinguishable regions has suggested the potential of YIG/Si films for magnetic memory application. This work has shed light on the prospective of YIG/Si films for resistive and magnetic memory applications and fundamental aspects of growth of YIG on nongarnet substrates.

Electrocatalysis on Edge-Rich Spiral WS2 for Hydrogen Evolution

Transition metal dichalcogenides (TMDs) exhibit promising catalytic properties for hydrogen generation, and several approaches including defect engineering have been shown to increase the active catalytic sites. Despite preliminary understandings in defect engineering, insights on the role of various types of defects in TMDs for hydrogen evolution catalysis are limited. Screw dislocation-driven (SDD) growth is a line defect and yields fascinating spiral and pyramidal morphologies for TMDs with a large number of edge sites, resulting in very interesting electronic and catalytic properties. The role of dislocation lines and edge sites of these spiral structures on their hydrogen evolution catalytic properties is unexplored. Here we show that the large number of active edge sites connected together by dislocation lines in the vertical direction for a spiral WS2 domain results in exceptional catalytic properties toward hydrogen evolution reaction. A micro-electrochemical cell fabricated by photo- and electron beam-lithography processes is used to study the electrocatalytic activity of a single spiral WS2 domain, controllably grown by chemical vapor deposition. Conductive atomic force microscopy studies show improved vertical conduction for the spiral domain, which is compared with monolayer and mechanically exfoliated thick WS2 flakes. The obtained results are interesting and shed light on the role of SDD line defects, which contribute to large number of edge sites without compromising the vertical electrical conduction, on the electrocatalytic properties of TMDs for hydrogen evolution.

Electrical Conductivity of Delithiated Lithium Cobalt Oxides: Conductive Atomic Force Microscopy and Density Functional Theory Study

LiCoO2, one of the most popular cathode materials for lithium-ion batteries, is well known for undergoing insulator–metal transitions depending on the amount of lithium ions. In this study, we succ...

Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays

AbstractMemristors enter a critical developmental stage where emerging large‐scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here, the superior uniformity is achieved within HfO2 films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film‐thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c‐AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c‐AFM nanotomography and cross‐sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI‐oxide interactions and overall switching performance.

Conductive atomic force microscopy studies of charged domain walls in KTiOPO4

We study the conductive properties of charged domain walls in KTiOPO4 using conductive atomic force microscopy. We show that the region of increased conductivity at the domain wall broadens when the wall is in motion, extending from the initial wall position to the final wall position. When wall motion stops, the conductive region attains a narrow width. The magnitude of the conductivity of charged domain walls is four times larger than that of the surrounding domains, as is the case at stationary wall. We investigate the impact of the scanning-angle on the domain wall conductivity and the wall motion.

Understanding the Intrinsic Carrier Transport in Highly Oriented Poly(3-hexylthiophene): Effect of Side Chain Regioregularity.

The fundamental understanding of the influence of molecular structure on the carrier transport properties in the field of organic thermoelectrics (OTEs) is a big challenge since the carrier transport behavior in conducting polymers reveals average properties contributed from all carrier transport channels, including those through intra-chain, inter-chain, inter-grain, and hopping between disordered localized sites. Here, combining molecular dynamics simulations and experiments, we investigated the carrier transport properties of doped highly oriented poly(3-hexylthiophene) (P3HT) films with different side-chain regioregularity. It is demonstrated that the substitution of side chains can not only take effect on the carrier transport edge, but also on the dimensionality of the transport paths and as a result, on the carrier mobility. Conductive atomic force microscopy (C-AFM) study as well as temperature-dependent measurements of the electrical conductivity clearly showed ordered local current paths in the regular side chain P3HT films, while random paths prevailed in the irregular sample. Regular side chain substitution can be activated more easily and favors one-dimensional transport along the backbone chain direction, while the irregular sample presents the three-dimensional electron hopping behavior. As a consequence, the regular side chain P3HT samples demonstrated high carrier mobility of 2.9 ± 0.3 cm2/V·s, which is more than one order of magnitude higher than that in irregular side chain P3HT films, resulting in a maximum thermoelectric (TE) power factor of 39.1 ± 2.5 μW/mK2 at room temperature. These findings would formulate design rules for organic semiconductors based on these complex systems, and especially assist in the design of high performance OTE polymers.

Conductive Atomic Force Microscopy Study of the Resistive Switching in Yttria-Stabilized Zirconia Films with Au Nanoparticles.

We report on the investigation of the resistive switching (RS) in the ultrathin (≈5 nm in thickness) yttria-stabilized zirconia (YSZ) films with single layers of Au nanoparticles (NPs) by conductive atomic force microscopy (CAFM). Besides the butterfly-type hysteresis loops in the current-voltage (I-V) curves of the contact of the CAFM probe to the investigated film surface corresponding to the bipolar RS, the negative differential resistance (NDR) has been observed in the I-V curves of the AFM probe contact to the YSZ films with Au NPs in the conductive (“ON”) state. The NDR has been related to the resonant tunneling of electrons through the size-quantized energy states in the ultrafine (1 to 2 nm in diameter) Au NPs built in the conductive filaments in the YSZ films.

Conductive atomic force microscopy study of the photoexcitation effect on resistive switching in ZrO2(Y) films with Au nanoparticles

We report on the experimental observation of the effect of optical excitation on resistive switching in ultrathin ZrO2(Y) films with single-layered arrays of Au nanoparticles. The samples were prepared by depositing nanometer-thick Au films sandwiched between two ZrO2(Y) layers by magnetron sputtering followed by annealing. Resistive switching was studied by conductive atomic force microscopy by measuring cyclic current-voltage curves of a probe-to-sample contact. The contact area was illuminated by radiation of a semiconductor laser diode with the wavelength corresponding to the plasmon resonance in an Au nanoparticle array. The enhancement of the hysteresis in cyclic current-voltage curves due to bipolar resistive switching under illumination was observed. The effect was attributed to heating of Au nanoparticles due to plasmonic optical absorption and a plasmon resonance, which enhances internal photoemission of electrons from the Fermi level in Au nanoparticles into the conduction band of ZrO2(Y). Both factors promote resistive switching in a ZrO2(Y) matrix.

Improving conductivity in carbon nanotube percolating networks through inclusion of Laponite nanoparticles

Obstacles to the commercialization of carbon nanotubes (CNTs) in alternative energy and clean water applications include high production costs, aggregation problems, and poor water solubility. We report the use of Laponite nanoparticles to improve the aqueous phase fabrication of single-walled CNT (SWCNT) percolating networks. SWCNT/Laponite films were cast at varied Laponite and CNT ink concentrations to optimize polydispersity. Structural and morphological characterization identified isolated aggregates, coalesced aggregates, and interconnected networks. Conductive atomic force microscopy studies confirmed that the nanocomposite films maintained their electrical transport properties after heteromixing. Incorporating Laponite improved CNT aqueous dispersibility, prevented aggregation, and promoted continuous, homogenous film formation.

Chemically Designed Metallic/Insulating Hybrid Nanostructures with Silver Nanocrystals for Highly Sensitive Wearable Pressure Sensors.

With the increase in interest in wearable tactile pressure sensors for e-skin, researches to make nanostructures to achieve high sensitivity have been actively conducted. However, limitations such as complex fabrication processes using expensive equipment still exist. Herein, simple lithography-free techniques to develop pyramid-like metal/insulator hybrid nanostructures utilizing nanocrystals (NCs) are demonstrated. Ligand-exchanged and unexchanged silver NC thin films are used as metallic and insulating components, respectively. The interfaces of each NC layer are chemically engineered to create discontinuous insulating layers, i.e., spacers for improved sensitivity, and eventually to realize fully solution-processed pressure sensors. Device performance analysis with structural, chemical, and electronic characterization and conductive atomic force microscopy study reveals that hybrid nanostructure based pressure sensor shows an enhanced sensitivity of higher than 500 kPa-1, reliability, and low power consumption with a wide range of pressure sensing. Nano-/micro-hierarchical structures are also designed by combining hybrid nanostructures with conventional microstructures, exhibiting further enhanced sensing range and achieving a record sensitivity of 2.72 × 104 kPa-1. Finally, all-solution-processed pressure sensor arrays with high pixel density, capable of detecting delicate signals with high spatial selectivity much better than the human tactile threshold, are introduced.