Conduction Of Charge Carriers Research Articles

Selective response features of MXene loaded Co9S8@In2S3 nanocomposites to triethylamine in gas mixtures

In this study, a composite heterojunction material of Ti3C2Tx MXene nanosheets with Co9S8 @In2S3 nanoparticles, named (Co9S8 @In2S3)/MXene, was constructed using a hydrothermal method. The materials were characterized and analyzed in terms of morphology, structure, and selective response properties to triethylamine gas. The materials were characterized by SEM, TEM, HAADF, STEM, XRD, XPS, BET, and other tests. The results showed a response value of 44.9 for (Co9S8 @In2S3)/20% MXene at 350 °C and 20 ppm triethylamine (TEA), with a response/recovery time of 63 s/115 s respectively. In particular, (Co9S8 @In2S3)/MXene exhibits excellent immunity to interference and a highly stable adsorption/desorption process with almost no noise interference. In addition, the (Co9S8 @In2S3)/MXene material showed stable and fast selective response to TEA in different types of gas mixtures compared with the commonly used single TEA selective response study method. The results of this study provide valuable techniques and theories for the Environmental protection application of TEA selective response materials. Finally, this article performs a comparative analysis on the mechanism of selection response and stability of (Co9S8 @In2S3)/MXene materials, and concludes that the process determining the specific response of (Co9S8 @In2S3)/MXene materials to particular gas molecules includes three processes: shape-selective adsorption, redox reaction, and charge carrier conduction.

Structure, optical, charge transport mechanism, dielectric properties and leakage current analysis of Sm2MgMnO6 double perovskite

Structure, optical, dielectric, charge transport properties, and leakage current density of Sm2MgMnO6 prepared via auto–combustion method have been investigated in this study. The stoichiometry of the constituent elements in the prepared sample agrees with the expected values. The sintered sample exhibits a monoclinic crystal structure with space group P21/n. The crystal structure is distorted and tilted. The grains are irregular in shape and size and distributed non–uniformly. The average crystallite and grain size are 151 nm and 176.49 nm, respectively. The direct optical band gap (1.41 eV) is associated with octahedral distortion. The tangent of dielectric loss increases beyond ∼300 °C rapidly. The Havriliak–Negami formalism has been used to explain the dielectric properties. The material is relaxor ferroelectric in nature. The conduction of charge carriers follows non–overlapping small polaron tunneling (NSPT) conduction model. The ac activation energy decreases with frequency. The leakage current conduction is Ohmic in nature. The sample exhibits 1.53 × 10−6 Acm−2 leakage current density at 5.11 Vcm−1 and 150 °C, which follows the Schottky emission relation. The obtained results have been compared with the literature.

Non-Conjugated Poly(Diphenylene Phthalide)-New Electroactive Material.

In organic electronics, conjugated conductive polymers are most widely used. The scope of their application is currently very wide. Non-conjugated polymers are used much less in electronics and are usually used as insulation materials or materials for capacitors. However, the potential of non-conjugated polymers is much wider, due to the fact that new electronic materials with unique electronic properties can be created on the basis of non-conjugated polymers, as well as other inorganic dielectrics. This article demonstrates the possibilities of creating electrically conductive materials with unique electronic parameters based on non-conjugated polymers. The results of the study of the sensory properties of humidity are given as examples of the practical application of the structure. The abnormal electronic properties are realized along the interface of two polymer dielectrics with functional polar groups. The submicron films of polydiphenylenephthalide were used as a dielectric. It is shown that a quasi-two-dimensional electronic structure with abnormally large values of conductivity and mobility of charge carriers occurs along the interface. These structures are often called quasi-two-dimensional electron gas (Q2DEG). This article describes the manufacturing processes of multielectrode devices. Polymer films are deposited via the spin-coating method with polymer solutions in cyclohexanone. The metal electrodes were manufactured through thermal deposition in a vacuum. Three types of metal electrodes made of aluminum, copper and chromium were used. The influence of the electron work function of contacting metals on the electronic parameters of the structure was studied. It was established that the work function decrease leads to an increase in the conductivity and mobility of charge carriers. The charge carrier parameters were estimated based on the analysis of the current-voltage characteristics within the space-charge-limited current technique. The Richardson-Schottky thermionic emission model was used to evaluate values a potential barrier at metal/organic interfaces. It was established that the change in ambient humidity strongly affects the electronic transport properties along the polymer/polymer interface. It is demonstrated that the increase in conductivity with an increase in humidity occurs due to an increase in the mobility of charge carriers and a decrease in the height of the potential barrier at the three-dimensional metal contact with two-dimensional polymer interface. The potential barrier between the electrode and the bulk of the polymer film is significantly higher than between the electrode and the quasi-two-dimensional polymer structure.

First-principles prediction of enhanced hydrogen sensing performance of Pt–MoS2 monolayer upon pre-adsorption of oxygen gas

Developing hydrogen sensors with high sensitivity and selectivity is particularly critical for applications of hydrogen energy. In this work, the sensing mechanisms of Pt-doped and O2-pre-adsorbed MoS2 monolayer toward hydrogen gas are investigated by first-principles. The results of adsorption energies, adsorption distance, band gaps change and Mulliken charge suggest that the doping of Pt in MoS2 leads to more stable configuration and better sensitivity for hydrogen adsorption, and this performance is further improved with pre-adsorption of oxygen molecule on MoS2. The strong hybridization indicates the strong interaction and chemisorption between the constructed oxygen and Pt–MoS2. The sensing mechanism of Pt–MoS2 is also revealed by the energy profile for dissociation of O2 and H2 molecules on Pt–MoS2, the reaction process increases the charge carrier concentration and conductivity of the sensing material. The proposed numerical framework provides a perspective foundation for developing high-performance and complicate gas sensor.

ПОДВИЖНОСТЬ НОСИТЕЛЕЙ ЗАРЯДА ВДОЛЬ ГРАНИЦЫ РАЗДЕЛА ПОЛИМЕР/ПОЛИМЕР

Organic thin-film transistors are increasingly being used in various electronic devices, successfully replacing transistors on silicon and other traditional semiconductors. The advantages of such electronic devices are particularly noticeable in the development of flexible electronic devices. However, one of the intractable problems of organic devices is the low mobility of charge carriers, often not exceeding 10-3 cm2/Vs. Obviously, this significantly limits the scope of their application. In this paper, a new approach to the formation of a transport layer in an organic field-effect transistor is proposed. This approach is based on the use of anomalous transport properties occurring along the interface of two dielectrics. Along such a boundary, a layer of quasi-two-dimensional electron gas with abnormally large values of conductivity and mobility of charge carriers can occur. In this regard, polymer heterostructures representing a field-effect transistor with a transport layer made in the form of an interface between two films of an unconjugated (dielectric) polymer, polydiphenylene phthalide, were investigated in this work. Along such a boundary, a layer of quasi-two-dimensional electron gas with abnormally large values of conductivity and mobility of charge carriers can occur. In this regard, polymer heterostructures representing a field-effect transistor with a transport layer made in the form of an interface between two films of an unconjugated (dielectric) polymer, polydiphenylene phthalide, were investigated in this work. The paper describes the technology of creating a multielectrode device. Polymer films were made by centrifugation from a polymer solution in cyclohexanone. The metal electrodes were manufactured by thermal deposition in vacuum. Measurements of the electrophysical characteristics of an organic field-effect transistor have been carried out. It is established that the main charge carrier along the interface are electrons. Estimates of the mobility of charge carriers were carried out using two different techniques. At zero potential at the gate, an injection model of currents limited by a volumetric charge was used. In the presence of a potential on the gate, the mobility assessment was made within the framework of the field effect model. Comparison of the obtained estimates showed satisfactory agreement of the mobility values. From this fact, it was concluded that it is possible to use an injection model to estimate the mobility of charge carriers when they move along the polymer/polymer interface.

Encapsulation of Ba–Sr hexaferrite nanoparticlesand MWCNTs in conductive polymer matrix for improved dielectric spectroscopy, electromagnetic shielding and microwave absorption applications

Ba–Sr hexaferrite nanoparticles were produced using Sol-Gel auto combustion, whereas carrier fluid ultrasonication dispersion and in-situ polymerization were used to synthesize their composites with MWCNTs and conductive polymers. Structural investigations were accomplished using X-rays diffraction, secondary electron microscopy, Infrared and Raman Spectroscopy. The low frequency dielectric measurements revealed increased dielectric losses (304 at 100 Hz for pure nanoparticles, which increases up to 2721 and 7861 for ternary composites within polyaniline and Polythiophene matrix), indicating good energy dissipation behavior. The diminishing magnetism resulted from the weakening of exchange coupling or domain wall pinning at the interface of Ferrite-MWCNTs and Ferrite-Polymer, causing the shifting of magnetic resonance peak towards lower frequency in the shielding effectiveness (Absorption) plots. Increasing DC conductivity adds to the nominal increase of Shielding effectiveness (Reflection) values owing to the rise in charge carrier conduction. The maximum total shielding effectiveness, perceived for the composition of Ba0.5Sr0.5Fe12O19/MWCNTs/Polythiophene, was −34 dB and −33 dB at 8.1 GHz and 16.2 GHz, respectively. The microwave absorption of our samples was evaluated as a function of frequency and thickness, revealing its dependence on the quarter wavelength phenomenon with maximum reflection loss of −39 dB observed for ternary composite with Polythiophene matrix at 7.4 GHz resonance frequency. The resonance bands coincide with the operating frequency of military radars for shipborne and airborne surveillance and navigation in the X band.

Facile Synthesis of P-Doped ZnIn2S4 with Enhanced Visible-Light-Driven Photocatalytic Hydrogen Production.

ZnIn2S4 (ZIS) is widely used in the field of photocatalytic hydrogen production due to its unique photoelectric properties. Nonetheless, the photocatalytic performance of ZIS usually faces problems of poor conductivity and rapid recombination of charge carriers. Heteroatom doping is often regarded as one of the effective strategies for improving the catalytic activity of photocatalysts. Herein, phosphorus (P)-doped ZIS was prepared by hydrothermal method, whose photocatalytic hydrogen production performance and energy band structure were fully studied. The band gap of P-doped ZIS is about 2.51 eV, which is slightly smaller than that of pure ZIS. Moreover, due to the upward shift of its energy band, the reduction ability of P-doped ZIS is enhanced, and P-doped ZIS also exhibits stronger catalytic activity than pure ZIS. The optimized P-doped ZIS exhibits a hydrogen production rate of 1566.6 μmol g-1 h-1, which is 3.8 times that of the pristine ZIS (411.1 μmol g-1 h-1). This work provides a broad platform for the design and synthesis of phosphorus-doped sulfide-based photocatalysts for hydrogen evolution.

Measurement of Photoelectrophysical Characteristics of Conductive Layers of CsPbBr3 Colloidal Quantum Dots

Colloidal quantum dots of perovskites having the chemical composition CsPbBr3 have been synthesized. For these particles, the average size of an ensemble of particles and sample polydispersity have been determined by steady-state spectrofluorometry. Conducting layers were made from the obtained particles, and the electrophysical characteristics of these layers were measured. The hole nature of the conductivity wasestablished, and the layer conductivity (0.04 S/m), mobility (0.8 cm2/(V s)), and number concentration of free charge carriers (3.01 × 1021 m−3) were measured. In accordance with published data, the measured mobility value is higher by one to two orders of magnitude than published typical values. It is shown that high polydispersity has a weak effect on the electrophysical and transport characteristics in the resulting layers.

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO2 Electrodes

TiO2-Based Materials The incorporation of both metallic and non-metallic ions into TiO2 has emerged as a promising area of research, as it has the potential to enhance the charge carrier kinetics. In article number 2200807 by Manish Kumar Vishwakarma, Monojit Bag, and Puneet Jain, the correlation analysis of impedance and modulus spectroscopy data paints a detailed picture of the charge carrier relaxation and conduction mechanism. It will help to optimize TiO2-based materials for practical applications.

Metal and Nonmetal Ion Doping Effect on the Dielectric Relaxation of TiO2 Electrodes

Titanium dioxide (TiO2) is a highly stable, photosensitive, and nontoxic metal oxide. The physical and chemical properties of TiO2 electrodes have been explored extensively for the last few decades. However, a detailed and comparative study of the dielectric relaxation and carrier kinetics with the dopants is still lacking. Herein, the crystallinity of TiO2 electrodes decreased with the dopants is reported. The doping of copper (Cu) in TiO2 reduces its bandgap to 2.98 eV from 3.22 eV. The improved charge carrier conduction at high frequencies (ω = 103–106 radians s−1) with the doping is noticed. The charge transfer resistance (R ct) for the electrons is minimum for Cu–TiO2 (R ct = 34.11 Ω) and Cu, Zn, and N–TiO2 (R ct = 27.44 Ω) compared to pristine and Cu and Zn–TiO2. Further, the high electrical permittivity is associated with the polar nature of electrodes. The correlation analysis of impedance and modulus spectroscopy data provides a prodigious picture of the charge carrier relaxation and conduction mechanism. A shift in the dielectric relaxation process from Debye type to non‐Debye type is observed after doping due to defect‐mediated fast relaxation of polarization.

Redox-Guided Synthesis of Au–V2O5–MnO2 Nanoflower Composites with Enhanced Electrical Conductance for Supercapacitor Applications

This paper details an approach for the synthesis of stable electroactive Au–V2O5–MnO2 nanoflower composites using a simple redox-mediated methodology under modified hydrothermal (MHT) conditions. The nanocomposite was characterized by various techniques like X-ray diffraction, scanning electron microscopy, high-resolution transmisson electron microscopy, and X-ray photoelectron spectroscopy. MnO2 and Au formed a profitable hierarchical network morphology in the interstitial sites of V2O5, and this kind of synergetic architecture exhibits an elevated specific capacitance (388 F g–1 at 1 A g–1) compared to commercial V2O5 (85 F g–1 at 1 A g–1) in a neutral electrolyte. The as-synthesized nanocomposite contributed more to energy storage with superior energy density (49 Wh kg–1 at 1 A g–1 current density) and power density (4 kW kg–1 at 10 A g–1 current density) and demonstrated improved stability compared to commercial V2O5 of up to 2000 continuous charge/discharge cycles in a two-electrode system. Temperature- and field-dependent [both direct-current (dc) and alternating-current (ac)] studies exhibited enhanced conductance due to the incorporation of Au and MnO2 and non-Ohmic electrical conduction, characterized by the onset voltage V0 (dc) and onset frequency f0 (ac). These two onset parameters followed power-law behavior with Ohmic conductance with two onset exponents (xV and xf). Such electrical transport properties were explained using intrachain hopping conduction of charge carriers within the layers of pristine V2O5 and hopping of charge carriers between the layers of V2O5 in the Au–V2O5–MnO2 nanocomposite and supported the interstitial incorporation of the compounds.

Microstructure, charge carrier conduction mechanism model, dielectric properties and leakage current analysis of Dy2FeMnO6 nanomaterial

The structure, microstructure, charge transport properties, dielectric properties, and leakage current density of Dy2FeMnO6 synthesized by the auto combustion method are investigated in this study. The monoclinic crystal structure of the sample with space group P21/n was observed. The CoO6 and MnO6 octahedra were found distorted and tilted. The calculation of the bond valence sum confirmed the +3 and + 3/+4 oxidation states of Fe and Mn, respectively. The average crystallite, particle, and grain sizes were 43.01, 94, and 187.68 nm, respectively. The anticipated stoichiometry of the constituent elements was confirmed by energy–dispersive X–ray spectra. The frequency–dependent conductivity obeyed Jonscher’s power law, and the frequency exponent associated with this law increased with temperature, indicating the non–overlapping small polaron tunnelling (NSPT) mechanism for charge conduction. The enhancement of the dielectric loss tangent with temperature was consistent with the dc conductivity. The frequency dependence of dielectric properties was explained using Havriliak–Negami formalism. The sample followed Vogel–Fulcher law, which is similar to the relaxor ferroelectrics, and the ferroelectricity increased with frequency. Conduction, migration, and dielectric relaxation all have similar activation energies. The sample exhibited low leakage current density, which followed Schottky emission with a barrier height of 0.02(4) eV. The obtained results were compared with other rare–earth–based double perovskites.

Modeling of BN-Doped Carbon Nanotube as High-Performance Thermoelectric Materials.

Ternary BNC nanotubes were modeled and characterized through a periodic density functional theory approach with the aim of investigating the influence on the structural, electronic, mechanical, and transport properties of the quantity and pattern of doping. The main energy band gap is easily tunable as a function of the BN percentage, the mechanical stability is generally preserved, and an interesting piezoelectric character emerges in the BNC structures. Moreover, C@(BN)1-xCx double-wall presents promising values of the thermoelectric coefficients due to the combined lowering of the thermal conductivity and increase of charge carriers. Computed results are in qualitative agreement with the little experimental evidence and therefore can provide insights on an atomic scale of the real samples and direct the synthesis towards increasingly performing hybrid nanomaterials.

Quantum coherent transport and electron–electron interaction in BiSbTe3 single crystals

This report focuses on the role of defects on magnetotransport properties of the single crystal of BiSbTe 3 topological insulator. Two cleaved crystals S1 and S2 of the same boule have been used, among them, S1 shows metallic behavior whereas S2 represents the multiple transport mechanism which includes thermal activation behavior, hopping conduction of localized charge carriers, quantum coherent transport and electron–electron interaction at high, moderate and low temperatures respectively. The detailed resistivity and magnetoresistance analysis confirm the presence of weak antilocalization behavior explained by Hikami-Larkin-Nagaoka formula. These crystals indicate the presence of multichannel quantum coherent transport which depends on the thickness of sample.

Aerosol Jet Printed Organic Memristive Microdevices Based on a Chitosan:PANI Composite Conductive Channel

In this study we show a chitosan:polyaniline (CPA)-based ink, responding to eco-biofriendly criteria, specifically developed for the manufacturing of the first organic memristive device (OMD) with an aerosol jet printed conductive channel. Our contribution is in the context of bioelectronics, where there is an increasing interest in emulating neuromorphic functions. In this framework, memristive devices and systems have been shown to be well suited. In particular organic-based devices are envisaged as very promising in some applications, such as brain–machine interfacing, owing to specific properties of organics (e.g., biocompatibility, mixed ionic–electronic conduction). On the other hand, the research activities on flexible organic (bio)electronic devices and direct writing (DW) noncontact techniques increasingly overlap in the effort of achieving reliable applications benefiting from the rapid prototyping to accomplish a fast device optimization. In this context, ink-based techniques, such as aerosol jet printing (AJP), although particularly well suited to implement 3D-printed electronics due to advantages it offers in terms of a wide set of allowed printable materials, still require research efforts aimed at conferring printability to the desired precursors. The developed CPA composite was characterized by FTIR, DLS, and MALDI-TOF techniques, while the related aerosol jet printed films were studied by SEM and profilometry. Taking advantage of the intrinsic and stable electrical conductivity of CPA films, which do not necessarily require any acidic treatment to promote a sustained charge carrier conduction, 10 μm short-channel OMDs were hence manufactured by interfacing the printed CPA layers with a solid polyelectrolyte (SPE). We accordingly demonstrated prototypes of stable and best performing OMD devices with downscaled features, showing well-defined counterclockwise hysteresis/rectification and an enhanced durability. These properties pave the way to further improving performance, as well as to realizing a direct integration of the devices into hardware neural networks by in-line fabrication routes.

Solid solutions based on In2O3 with additions of ZrO2 ― changes in their structural and electro physical properties

Solid solutions in the In2O3‒ZrO2 system are formed on the basis of a disordered phase of the C1 type of indium oxide. It was found that in the temperature range 1450‒1600 °C in air. limited solid solutions of the following type are formed in the system: subtraction-substitution, substitution, subtraction-substitution-introduction. The sizes of indium and zirconium cations, the number of defects determine the type of solid solution in a system based on In2O3 with additions of ZrO2. Experimentally, the formation of a mixture of two solid solutions of type C‒Ia3-based on oxides In2O3 and Zr2O3, after annealing the samples at 1600 °C, and were determined elementary cells of these solutions. The energies of formation of solid solutions of subtraction-substitution, substitution, subtractionsubstitution-introduction in the system based on In2O3 are calculated. It was found that the electrical resistance, concentration and mobility of charge carriers in samples based on In2O3 with additions of ZrO2 depends on the type of solid solution and does not depend on the valence of the soluble additive ZrO2. The types of conductivity of free charge carriers in solid solutions are determined and their energies are calculated. Ill. 4. Ref. 20.

CuO-based materials for thermochemical redox cycles: the influence of the formation of a CuO percolation network on oxygen release and oxidation kinetics

Thermochemical redox cycles such as chemical looping combustion (CLC) are an economically promising CO2 capture technology that rely on the combustion of a hydrocarbon fuel with lattice oxygen that is derived from a solid oxygen carrier. The oxygen carrier is typically regenerated with air. To increase the agglomeration resistance and redox stability of the oxygen carriers, the active phase is often stabilized with high Tammann temperature ceramics, resulting in the formation of so-called cermet structures. It has been hypothesized that the redox performance of the cermets depends critically on the conduction pathways for solid-state ionic diffusion and the activation energy for charge transport. Here, we investigate the influence of the formation of a percolation network on the electrical conductivity and the rate of oxidation for CeO2-stabilized Cu. We found that for oxygen carriers that contained 60 wt. % CuO, the charge transport occurred predominately via Cu/CuO conduction pathways. Below the percolation threshold of CuO, the conduction of charge carriers took place via CeO2 grains, which formed a continuous network. The measurements of charge transport and redox characteristics confirmed that the activation energy for charge transport through the cermet increased with decreasing Cu content. This indicates that the solid-state diffusion of charge carriers plays an important role during re-oxidation.

High temperature dielectric and impedance spectroscopy study of LaCo0.7Nb0.3O3

We report the high temperature dielectric and ac impedance spectroscopy investigation of Nb substituted LaCo0.7Nb0.3O3 polycrystalline sample. The maximum dielectric constant value was observed ≈1400 at around 400 K where the peak value shows a decreasing trend at higher temperatures and frequency. Similar variation was reflected in the dielectric loss behavior with temperature, which shows the thermal activation of the charge carriers in the material. The analysis of high temperature impedance spectroscopy data shows the grain and grain boundary contributions by fitting the Nyquist plots to the equivalent circuit. From the analysis of the impedance and modulus spectra, it was possible to discern between the effects of overlapping grains, grain boundaries, and electrode interfaces. The relaxation time decreases with an increase in the temperature and the activation energy changes from 0.44 eV to 0.56 eV at around 400 K, which is due to involvement of thermal activation in the conduction of charge carriers.

Structure, charge carrier conduction, dielectric properties and leakage current density of Dy2CoMnO6 double perovskite

In this study, the structure, charge transport properties, dielectric properties, and leakage current density of Dy2CoMnO6 double perovskite are investigated. The sample is prepared via auto–ignition method. The Rietveld refinement of the X–Ray diffraction pattern of the sintered sample reveals the monoclinic phase with space group P21/n. The crystal structure of the sample is distorted and tilted. The dominant oxidation state of Co and Mn are +3 and +4, which are estimated from the bond valence sum method. The values of activation energy for dc conduction are 0.16 eV (≤ 75 ℃) and 0.37 eV (≥ 100 ℃). The charge carrier conduction follows a correlated barrier hopping mechanism (≤ 75 ℃). Scaling spectra confirms the temperature independence nature of the conduction and relaxation mechanism below 75 ℃. The grain boundary conductivity is higher than the grain interior conductivity due to the low grain boundary blocking factor. The sample exhibits a non–Debye type nature. The value of the tangent of dielectric loss lies from 4.15 to 33.11 in the frequency range from 50 Hz to 500 KHz, and the value of real part of complex dielectric constant lies between 102 and 67608 in the frequency range from 500 Hz to 50 kHz. The analysis of the imaginary part of the complex dielectric constant confirms the predomination of the dc electrical conduction process in the sample. The comparable values of the activation energy for dc conduction, grain interior conductivity, grain boundary conductivity, migration energy, and activation energy confirm the interlinking among these processes. The room temperature leakage current density is 4.36 × 10–4 Acm–2 at 8.05 Vcm–1. The leakage current density follows the Ohmic conduction and has been explained with the Schottky barrier model.

Effect of A-site doping on electrical properties of La2-xPrxFeCoO6 double perovskite prepared by sol-gel technique

The present work deals with the synthesis, characterization, and thermoelectric properties of La2-xPrxFeCoO6 (x ​= ​0.0, 0.25, 0.50, 0.75, and 1.0) ceramics. The crystal structure, microstructural characteristics, electrical properties, and thermal transport characteristics of the sintered samples were studied. The samples prepared by sol-gel technique resulted in the presence of nanocrystalline single phase material after 6 ​h of sintering, and the increased crystallite size with increasing Pr concentration alongwith the occurrences of multivalent oxidation states of La, Pr, Fe, Co and O. The conductivity investigation revealed the presence of a nearest neighbor hopping charge carrier conduction mechanism in the entire samples, i.e., an increasing Pr-content result in enhanced conductivity at every examined temperature. For the entire composition range (x), conductivity increases with increasing temperature up to maximum value at a transition temperature followed by a downward trend, indicating the metallic behavior (reduction in semiconducting behavior) due to the presence of oxygen deficiency at higher temperature. Positive S values indicate the presence of p-type charge carrier in La2-xPrxFeCoO6 double perovskite and intrinsic behavior was conserved with increasing doping concentration (x). Temperature dependent power factor increases with increasing Pr-content and the maximum values were observed at their transition temperatures. Within recorded temperature, the highest Figure of Merit (ZT ​= ​∼0.87) was observed at x ​= ​1.0 in La2-xPrxFeCoO6 compound, which was 5.4 times more as compare to x ​= ​0.0.