Solid solutions based on In2O3 with additions of ZrO2 ― changes in their structural and electro physical properties

Abstract

Solid solutions in the In2O3‒ZrO2 system are formed on the basis of a disordered phase of the C1 type of indium oxide. It was found that in the temperature range 1450‒1600 °C in air. limited solid solutions of the following type are formed in the system: subtraction-substitution, substitution, subtraction-substitution-introduction. The sizes of indium and zirconium cations, the number of defects determine the type of solid solution in a system based on In2O3 with additions of ZrO2. Experimentally, the formation of a mixture of two solid solutions of type C‒Ia3-based on oxides In2O3 and Zr2O3, after annealing the samples at 1600 °C, and were determined elementary cells of these solutions. The energies of formation of solid solutions of subtraction-substitution, substitution, subtractionsubstitution-introduction in the system based on In2O3 are calculated. It was found that the electrical resistance, concentration and mobility of charge carriers in samples based on In2O3 with additions of ZrO2 depends on the type of solid solution and does not depend on the valence of the soluble additive ZrO2. The types of conductivity of free charge carriers in solid solutions are determined and their energies are calculated. Ill. 4. Ref. 20.