Conduction Band Research Articles

Controlling the luminescence of CdSe quantum dots in the fluorinephosphate glass

A series of fluorophosphate glasses with CdSe and CdSe+ZnSe are successfully synthesized. After heat treatment above the glass transition temperature, CdSe quantum dots with sizes 1.5–5.5 nm are formed. The luminescence spectra of CdSe quantum dots are analyzed at various temperatures, excitation energies and chemical composition of glass. The influence of selenium content on the growth features of quantum dots is shown. The size dependence of luminescence quantum yield on the QDs size is found. The 2.0–2.5 nm-sized QDs demonstrate trap emission in the region of 1.7–1.85 eV with a maximum quantum yield of 60 %. It is found that only a broad band due to the transition from the low state of the conduction band and the shallow donor trap states to the deep accepter trap levels is observed. This broad emission band is observed at any selenium cadmium ratio and zinc introduction.

Slowing down the hot electron cooling to activate near-infrared photocatalytic activity in potassium/carbon co-doped polymeric carbon nitride

The research on hot electron cooling in photocatalysis has been neglected. Here, taking polymeric carbon nitride as an example, a potassium/carbon (K/C) co-doping strategy is proposed to slow down hot electron cooling. The K/C co-doping reduces the specific arrangement and overlap of electronic band structures, and decreases the degeneracy of conduction band energy levels, thus exciting phonon bottleneck effect to effectively suppress the relaxation of hot electrons by reducing the interaction between hot electrons and phonons. Our work benefits to improve the efficiency of photocatalytic energy conversion.

Optimizing electron transport layers for high-efficiency perovskite solar cells using impedance spectroscopy

The best interface for a perovskite solar cell is designed to facilitate effective charge transport to achieve a high-power conversion efficiency. Tin dioxide (SnO2) is widely recognized as an electron transport material for perovskite solar cells, offering advantages such as low hysteresis, low defect concentration, and low fabrication temperature. However, the low conduction band edge of SnO2 restricts the built-in potential of the solar cell device. In this study, we designed a double layer of electron transport by applying zinc oxide (ZnO) on SnO2 to improve the electron transport properties in perovskite solar cells. The bilayer of electron transport enhances the interfaces between the perovskite and the electron transport layer, leading to an improvement in the efficiency and stability of solar cell devices up to 11.71 % compared to a single SnO2 layer device with a PCE of 9.06 %. The introduction of ZnO reduces charge recombination, resulting in a lower recombination resistance (Rrec). Also, charge transfer resistance (Rct) of ZnO/SnO2 increased to 16.6KΩ compared to a single SnO2 layer device with a Rct of 5.29KΩ. Our findings provide valuable insights into the design of electron transport layers for perovskite solar cells and highlight the importance of electrochemical impedance spectroscopy in understanding the dynamic processes that govern their performance.

Dual electric field and defect engineering induced multi-channel electron transfer for boosting photocatalytic hydrogen production on Cu2+-doped ZnMoO4/ZnIn2S4 heterojunction

Serious recombination of photogenerated carriers is the bottleneck problem of achieving high-performance photocatalytic reaction. A high efficient Cu2+-doped ZnMoO4/ZnIn2S4 (CZMOZIS) heterojunction was synthesized by hydrothermal method. The CZMOZIS heterostructure achieved hydrogen production of 11637.5 µmol g−1 within 5 h, which was 9.7 times higher than that of pure ZnIn2S4. Comprehensive characterization and theoretical calculation demonstrated that the CZMOZIS composites exhibited broad light absorption, an increased specific surface area and an optimized Gibbs free energy. The presence of oxygen vacancies in CZMOZIS composites was confirmed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy, revealing the formation of defect levels below the conduction band (CB) of ZnMoO4. Kelvin probe force microscopy (KPFM) and Zeta potential demonstrated that the intrinsic electric field (IEF) of the CZMOZIS heterojunction was enhanced, which may be attributed to the generation of polarization electric field (PEF). The double electric field provided a robust driving force for the photogenerated carrier migration and separation. The electrons in the CB and defect levels of Cu2+-ZnMoO4 could be coupled with the holes of ZnIn2S4, thereby forming a multi-channel electron transfer. This work provides a theoretical support for promoting charge transfer to improve photocatalytic performance by dual electric field and defect engineering.

Enhanced Schottky barrier engineering in silver-doped TiO2/p-Si heterojunctions: Insights into electrical behavior and charge carrier dynamics

Heterojunctions were fabricated through the deposition of silver-doped Titanium dioxide (Ag–TiO2) onto p-type crystalline silicon, employing the sol-gel technique. Electrical characterization was conducted with varying Ag concentrations. The investigation revealed that the Schottky barriers at each interface (Ag/TiO2 and Si/Ag), along with the built-in potential at the TiO2/p-Si junction, increase proportionally with the Ag concentration. This observed trend was attributed to the reduction in the TiO2 bandgap due to Ag incorporation, resulting in a concurrent shift in both valence and conduction bands. Consequently, there is a growth of the conduction energy discontinuity and a reduction in the valence one, facilitating hole diffusion while impeding electron transfer across the depletion layer. Furthermore, the introduction of Ag leads to a decrease in both electron and hole concentrations. However, Ag incorporation within the TiO2 matrix manifests as nanoparticles and clusters, resulting in a nonhomogeneous distribution of charge carriers across the sample. Impedance analysis indicates an increase in device resistance and a decrease in effective capacitance.

Harnessing multifunctional antimony doped Tin (IV) sulfide nanosheets for chlorpyrifos degradation and hydrogen evolution

Multifunctional photocatalysts are vital for advancing environmental sustainability and clean energy. The hydrothermal method helped in optimized antimony (Sb) doping in the Tin (IV) sulfide (SnS2) lattice, increasing surface area with nanosheet assortment, as confirmed by Scanning Electron Microscopy and BET (Brunauer, Emmett and Teller) analysis. Moreover, the Fermi level shift towards conduction band within the semiconductor, increasing free electron concentration which enhanced conductivity and altered electronic properties. Photocatalysts were evaluated for Chlorpyrifos pesticide degradation, with studies conducted on photocatalytic parameters such as catalyst dosage, pesticide concentration, and pH to ascertain optimal degradation conditions. The 6 wt% Sb-doped SnS2 (6Sb:SnS2) demonstrated highest degradation efficiency within 60 min and degradation obeyed a pseudo first-order kinetic model with a rate constant of 0.0349 min−1. The degradation pathway of Chlorpyrifos and its transformation products was elucidated through High-Performance Liquid Chromatography-tandem mass spectroscopy. In addition, Sb doping empowers the surface traps and hydrophilicity of photocatalysts towards successful interaction between photogenerated electrons/holes with adsorbed oxidizable/reducible species. Moreover, 6Sb:SnS2 exhibited superior hydrogen evolution of 214.39 µmolg−1h−1, along with improved stability. Significantly, 6Sb:SnS2 attained Apparent Quantum Yield (AQY400 nm) of 39.49 % attributed to the doping induced band structure modification of SnS2 to match the hydrogen ion reduction potential

In situ seed layer bandgap engineering leading to the conduction band offset reversion and efficient Sb2Se3 solar cells with high open-circuit voltage

Sb2Se3 solar cells have achieved a power conversion efficiency (PCE) of over 10%. However, the serious open-circuit voltage deficit (VOC-deficit), induced by the hard-to-control crystal orientation and heterojunction interface reaction, limits the PCE of vapor transport deposition (VTD) processed Sb2Se3 solar cells. To overcome the VOC-deficit problem of VTD processed Sb2Se3 solar cells, herein, an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3 seed layer (WBSL) at CdS/Sb2Se3 heterojunction interface to improve the PCE of Sb2Se3 solar cells. The analysis results show that the introduced Sb2(S,Se)3 seed layer can enhance the [001] orientation of Sb2Se3 thin films, broaden the band gap of heterojunction interface, and realize a “Spike-like” conduction band alignment with ΔEc = 0.11 eV. In addition, thanks to the suppressed CdS/Sb2Se3 interface reaction after WBSL application, the depletion region width of Sb2Se3 solar cells is widened, and the quality of CdS/Sb2Se3 interface and the carrier transporting performance of Sb2Se3 solar cells are significantly improved as well. Moreover, the harmful Se vacancy defects near the front interface of Sb2Se3 solar cells can be greatly diminished by WBSL. Finally, the PCE of Sb2Se3 solar cells is improved from 7.0% to 7.6%; meanwhile the VOC is increased to 466 mV which is the highest value for the VTD derived Sb2Se3 solar cells. This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.

Molecular engineering on tyrian puprle natural dye as TiO2 based fined tuned photovoltaic dye material: DFT molecular analysis

In this research, molecular modification is employed to see the enhancement in the efficiency of Tyrian Purple (TP), a natural dye, for organic photovoltaic materials.By using Density Functional Theory (DFT) based molecular modeling, seven new structures are designed with pi spacer to extend electron donor moieties. Teheir Frontier Molecular Orbital (FMO) analysis demonstartes their charges with a similar pattern of distributions over their Highest Occupied and Lowed Unocuupied Molecular Orbitals (HOMO/lUMO). This analysls also show their energy gaps (Egaps) to range around 2.97-3.02 eV. Their maximum absorption wavelength (λmax) demosntartes 486-490 nm range to indicate their tendency of absorbing light efficiently. Their Transition Density Matrix (TDM) analysis also reveals their facile electronic transitions without a significant charges over spacers. From calculating their photovoltaic paramters, their Light Harvesting Efficiency (LHE) reaches to 72.4-95.5 %. Also their Open Circuit Voltage (Voc) varies across 1.16-1.34 V. It is found that dyes actively adsorb onto TiO2 clusters to demonstrate their promise for tuning their Conduction Band (CB). This research is an effort for to evaluate the structural correlations to the developm photovoltaic materials through molecular-level design and optimization.

Multi-cation doped CuCrO[formula omitted] crystallite matrix: Exploring bandgap tunability through Ni-Zn and Ni-Zn-Mg doping for optoelectronic application

Bandgap tuning is a key approach to optimizing materials for advanced technologies, enabling the development of more efficient and specialized devices. In this study, we demonstrate the tunability of the bandgap of CuCrO2 from 2.38 to 4.37 eV via single cation-doping with Ni and Zn, and multi-cation doping with Ni-Zn and Ni-Zn-Mg. XRD analysis reveals structural changes due to lattice distortions by cationic substitution, while FESEM shows the impact of doping on particle size, surface morphology, and crystallinity. The lamellar structure observed with multi-cation doping in FESEM investigations indicates increased structural disorder and defects, causing tailing above the valence band and below the conduction band, significantly reducing the bandgap. The effect of Zn-Ni doping on the lattice is reversed with Mg2+ insertion due to p-p orbital interactions between Mg2+-O, replacing the d-p interaction in the Cr3＋-O bond, as confirmed by optical studies. UV–Vis and photoluminescence analyses reveal significant shifts in bandgaps and emission spectra, with Ni doping yielding a bandgap of 3.97 eV, Zn doping 3.16 eV, Zn-Ni doping expanding it to 4.37 eV, and Zn-Ni-Mg doping reducing it to 2.38 eV. The dopants also affect emission characteristics, including band edge and deep-level emissions. This study provides valuable insights into the relationship between cationic doping and material properties, guiding the design of CuCrO2-based materials with tailored functionalities.

Theoretical investigation of enhanced nonlinear optical properties of silicene and carbon nanotubes: Potential applications in infrared and ultraviolet optoelectronics

This theoretical study investigates the linear and nonlinear optical properties of zigzag carbon nanotubes (CNTs) and silicene nanotubes (SiNTs) with varying radii, focusing on their behavior in the infrared and ultraviolet energy ranges. In the infrared region, absorption spectra exhibit several peaks resulting from allowed transitions between valence and conduction bands. The number of absorption peaks increases with radius for both nanotube types, with SiNTs showing peaks at lower energy ranges and higher intensities compared to CNTs. Conversely, CNTs display markedly higher absorption intensities in the ultraviolet region. The quadratic electronic optic (DC Kerr) effect reveals sharp peaks near the band gap with multiple sign changes, attributed to allowed optical transitions at band edges. The third-order optical susceptibility for both CNT and SiNT structures show several peaks below the band gap energy due to multiphoton resonance absorption. In the infrared region, two highest and lowest subbands near to the Fermi level play a dominant role in the χTHG(3)(3ω) peaks formation. The position and intensity of χTHG(3)(3ω) peaks demonstrate a strong dependence on nanotube radius and type with higher intensity for the SiNTs. The tunable nature of the optical properties of CNTs and SiNTs by their radius and the enhanced nonlinear optical response of SiNTs, characterized by lower energy peaks and higher intensities, show their significant potential for advanced applications in nonlinear optics, optical detection, and high-energy optical systems.

Tailoring sub-5 nm Fe-doped CeO2 nanocrystals within confined spaces to boost photocatalytic hydrogen evolution under visible light

This work aimed to study the efficiency of the reverse micelle (RM) preparation route in the syntheses of sub-5 nm Fe-doped CeO2 nanocrystals for boosting the visible-light-driven photocatalytic hydrogen production from methanol aqueous solutions. The effectiveness of confining precipitation reactions within micellar cages was evaluated through extensive physicochemical characterization. In particular, the nominal composition (0–5 mol% Fe) was preserved as ascertained by ICP-MS analysis, and the absence of separate iron-containing crystalline phases was supported by X-ray diffraction. The effective aliovalent doping and modulation of the optical properties were investigated using UV-Vis, Raman, and photoluminescence spectroscopies. 2.5 mol% iron was found to be an optimal content to achieve a significant decrease in the band gap, enhance the concentration of oxygen vacancy defects, and increase the charge carrier lifetime. The photocatalytic activity of Fe-doped CeO2 prepared at different Fe contents with RM preparation was studied and compared with undoped CeO2. The optimal iron load was identified to be 2.5 mol%, achieving the highest hydrogen production (7566 μmol L−1 after 240 min under visible light). Moreover, for comparison, the conventional precipitation (P) method was adopted to prepare iron containing CeO2 at the optimal content (2.5 mol% Fe). The Fe-doped CeO2 catalyst prepared by RM showed a significantly higher hydrogen production than that obtained with the sample prepared by the P method. The optimal Fe-doped CeO2, prepared by the RM method, was stable for six reuse cycles. Moreover, the role of water in the mechanism of photocatalytic hydrogen evolution under visible light was studied through the test in the presence of D2O. The obtained results evidenced that hydrogen was produced from the reduction of H+ by the electrons promoted in the conduction band, while methanol was preferentially oxidized by the photogenerated positive holes.

Synthesis, Characterization of KNb0.99Eu0.01O3 and improved Photo-catalytic H2-Production on Ag/La2NiO4/ KNb0.99Eu0.01O3 hetero-junction

The perovskite KNb0.99Eu0.01O3 prepared by nitrate combustion is applied as a hydrogen photocathode in heterojunction with La2NiO4 under visible light. The XRD pattern confirms the formation of KNb0.99Eu0.01O3 structure with orthorhombic single phase. The SEM images present grains between 0.2 and 0.4 µm while the optical band gap (3.14 eV) is calculated from the diffuse reflectance. Under illumination, the cyclic voltammetry (CV) and the capacitance measurements in Na2SO4 electrolyte show an increased current below ∼ -0.7 V vs. Ag/AgCl and p-type behavior with a conduction band (CB = −1.95 V) cathodically positioned with respect to H2 level, thus leading to H2 photo-production. The hetero-system La2NiO4/KNb0.99Eu0.01O3 shows a much higher activity than KNb0.99Eu0.01O3 where efficient H2-photoevolution occurs with concomitant oxidation of S2O32−, as reducing agent. So, the co-junction of La2NiO4 with KNb0.99Eu0.01O3 facilitates the charge transfer and increases the reaction efficiency. At neutral pH, the H2 evolution rate for the photocatalysts KNb0.99Eu0.01O3 and La2NiO4/ KNb0.99Eu0.01O3 are 11.15 and 57 µmol g−1 min−1; respectively. Further enhancement is observed with Ag-loaded La2NiO4/KNb0.99Eu0.01O3, reaching a maximum hydrogen production rate of 67 µmol g−1 min−1, attributed to the lower overpotential introduced by Ag. These findings highlight the potential of the ternary system Ag/La2NiO /KNb0.99Eu0.01O3 as an efficient photocathode for H2 generation.

Modulation of electronic and thermal properties of boron phosphide nanotubes under electric and magnetic fields

This work theoretically investigates the thermoelectric properties of boron phosphide nanotubes (BPNTs) using the tight-binding model, Green function method, and Kubo formalism, focusing on a zigzag BPNT with indices (20, 0). The tight binding parameters obtained by matching its band structure with calculated density functional theory band structure. The study examines the effects of transverse electric fields and axial magnetic fields on various physical properties, such as band structure, density of states (DOS), heat capacity, magnetic susceptibility, and other thermoelectric properties. BPNTs consistently show semiconducting properties with a nearly 1 eV direct band gap. The electronic properties of BPNTs are significantly affected by applied electric field, which at very strong strengths can induce a semiconducting to metallic phase transition. In contrast, the magnetic field leads to the splitting of energy bands, especially around the Fermi level. The DOS also changes with the electric field, including variations in the position, intensity, and number of DOS peaks. The thermal properties and thermoelectric performance of BPNTs are temperature-dependent. Increasing of excited electrons thermal energy cause more occupation of high energy levels in the conduction bands. The electric field further enhances the thermal properties of BPNTs by modifying their electronic properties and reducing the band gap. Stronger electric fields cause a noticeable enhancement in the BPNTs thermal properties because it is increasing the concentration of excited charge carriers. This aspect is crucial for improving the thermoelectric efficiency of BPNTs, making them more competitive for practical applications.

An ab-initio investigation of Sc and Y doped chalcopyrite MgGeN[formula omitted]

The doping of Scandium and Yttrium within chalcopyrite MgGeN2 were computationally investigated using density function theory (DFT) calculations. By calculating the formation energy, it was shown that independent single Sc and Y dopants energetically favor the occupation of the Mg site, inducing a shallow level within the conduction band. However, in the presence of a substitutional defect, the second dopant will occupy the neighboring Ge site. There is strong attractive interaction between two dopants, so that they are easily combined into a composite defect. In this case a shallow defect level appears above the valence band edge. Similar behavior is observed for the composite defects containing one dopant and an intrinsic cation vacancy, while those with one dopant and a nitrogen vacancy induce a deep defect level and greatly reduce the band gap. The investigation deepens the knowledge of Sc and Y doped II-IV-V2 compounds and may hence lead to more implementations.

Z-scheme heterostructures confining rGO/protonated C3N5 junction supported CoCu LDH positive electrode and Fe3O4 negative electrode for supercapacitors

CoCu LDH stabilized reduced graphene oxide-linked N-rich protonated C3N5 (CoxCuy@rGO/P-CN) as a power source Z-scheme nanocomposite was rationally tailored engineered an electrodeposition approach. The electrochemical performance was regulated by adjusting the electrodeposition potential and manipulating the Co/Cu molar ratio. Hence, affording compelling evidence for fine-tuning the performance of pseudo-active compounds. Benefiting from abundant heterointerfaces and synergistic effects between LDH nanoarrays and rGO/P-CN heterojunction, the hierarchical ‒1.2V Co3Cu1@rGO/P-CN Z-scheme positive electrode achieves a higher capacitance of 1184 F g–1 at 1 A g–1 and good rate capability performance. Theoretical simulation outcomes illustrate that the Co3Cu1@rGO/P-CN nanocomposite has higher electronic conductivity and superior electronic transition capability, originating from robust interactions between valence and conduction bands, interfacial charge transfer, and built-in electric field at the LDH/rGO/P-CN interface. We also explore the Fe3O4@rGO/P-CN Z-scheme as a negative electrode material via a simple annealing process with a capacitance of 402 F g–1 at 1 A g–1 and an enhanced cyclic performance. Consequently, the as-assembled ‒1.2V Co3Cu1@rGO/P-CN//Fe3O4@rGO/P-CN asymmetric supercapacitor (ASC) cell acquires a remarkable energy density of 63.4 Wh kg–1 at 750 W kg–1 and displays an exceptional cycling activity with 88% retention after 11,000 cycles.

Anion-Driven Bandgap Tuning of AgIn(SxSe1-x)2 Quantum Dots.

Accurate tuning of the electronic and photophysical properties of quantum dots is required to maximize the light conversion efficiencies in semiconductor-assisted processes. Herein, we report a facile synthetic procedure for AgIn(SxSe1-x)2 quantum dots with S content (x) ranging from 1 to 0. This simple approach allowed us to tune the bandgap (2.6-1.9 eV) and extend the absorption of AgIn(SxSe1-x)2 quantum dots to lower photon energies (near-IR) while maintaining a small QD size (∼5 nm). Ultraviolet spectroscopy studies revealed that the change in the bandgap is modulated by the electronic shifts in both the valence band and the conduction band positions. The negative overall charge of the as-synthesized quantum dots enabled us to make films of quantum dots on mesoscopic TiO2. Excited state studies of the AgIn(SxSe1-x)2 quantum dot films demonstrated a fast charge injection to TiO2, and the electron transfer rate constant was found to be 1.5-3.5 × 1011 s-1. The results of this work present AgIn(SxSe1-x)2 quantum dots synthesized by the one-step method as a potential candidate for designing light-harvesting assemblies.

Cu gradient design to attain high efficient solution-processed CuIn(S,Se)2 solar cells

Solution-processed chalcopyrite solar cells are widely regarded as a promising alternative method in reducing the cost compared with vacuum-based techniques. It is noted that the absorber layer usually needs to be prepared under a high insert pressure (∼1.6 atm) to suppress element loss or under a mild pressure but additional surface etching is needed for fabricating high efficient solar cell. Herein, a copper gradient structured precursor is proposed to prepare CuIn(S,Se)2 (CISSe) film under a mild pressure (1.1 atm). The designed gradient Cu not only promotes crystal grain growth and tailors the defects, but also avoids the surface etching of the formed CISSe film for the fabrication of high efficient solar cells. Further, Cu gradient design decreases the conduction band offset of heterojunction, boosting the carriers transport across the p-n heterojunction. Accordingly, a 13.35% efficient CISSe solar cell, comparable to the high efficient CISSe solar cell prepared by this method under high pressure or with film surface etching, is fabricated. This work provides a facile pathway to fabricate high efficient solution-processed chalcopyrite solar cell, avoiding high selenization pressure and film etching, and shows huge potential for solution-processed copper-based solar cells.

Effect of Cu/Bi ratio on the photoelectrochemical performance of CuBi2O4/CuO nanocomposite films for CO2 reduction

Abstract Solar energy is free, clean, and virtually limitless; however, its conversion into a storable form presents technological challenges. One avenue towards solar energy utilization is the photoelectrochemical (PEC) reduction of CO2 to one- or two-carbon fuels, employing a semiconductor configured as an electrode. A potential material for this application is the p-type copper bismuth oxide (CuBi2O4) with a band gap capable of visible light absorption and a conduction band edge position suitable for CO2 reduction. In this study, CuBi2O4 nanocomposite films of varying Cu/Bi ratios (0.25, 0.51, 0.68, 0.94, 2.04) were prepared via an electrodeposition-spray deposition-annealing route. Where the Cu/Bi ratio exceeded the stoichiometric value of 0.5, a bilayered film composed of a copper (II) oxide (CuO) phase on top of CuBi2O4 was formed, creating a planar heterojunction between the two oxide layers. With increasing Cu/Bi ratio, the light absorption range of the films broadened due to the CuO phase. Analysis of the photocurrent-potential behavior of the films under visible-light illumination showed a 4–7-fold increase in the photocurrent from an inert electrolyte to a CO2-saturated electrolyte, confirming potential activity for CO2 reduction of the CuBi2O4/CuO films. A higher Cu/Bi ratio resulted to an improved charge separation efficiency, enhancing the photocurrent generation. However, the transient photocurrent response of the films showed a 70-80% decrease in the photocurrent after only 15 mins of testing. When tested in an electrolyte with an electron scavenger, the percent decrease was lowered to <10%, indicating that the instability of the films resulted from poor interfacial kinetics. While the CuBi2O4/CuO nanocomposite films can accomplish CO2 reduction, further strategies to improve their efficiency and stability are needed to realize practical application.

Light harvesting S-scheme g-C3N4/TiO2/M photocatalysts for efficient removal of hazardous moxifloxacin

The development of advanced photocatalysts with enhanced efficiency for environmental remediation is critical for addressing persistent organic pollutants like Moxifloxacin. In this study, we present a novel S-scheme heterojunction g-C3N4/TiO2/M photocatalyst designed to optimize light harvesting and charge separation for the effective degradation of Moxifloxacin. The innovative S-scheme configuration enables superior charge transfer dynamics by retaining potent photogenerated electrons in the conduction band of TiO2 and holes in the valence band of g-C3N4, significantly improving photocatalytic performance compared to conventional Type-II systems. Heterogeneous photocatalysis, particularly using TiO2-based materials, offers a promising approach. Here, we synthesized TiO2 hybridized with metal-doped g-C3N4 (GCNTM) via a simple hydrothermal method. The fabricated nanocomposites were characterized using SEM, XRD, FTIR, and UV–Vis (DRS). These GCNTM nanocomposites were employed for the degradation of hazardous Moxifloxacin (MXF) under visible light. Detailed analysis of the photocatalytic mechanism reveals that the synergistic interaction between g-C3N4, TiO2, and the co-catalyst M not only broadens the light absorption spectrum but also enhances the separation and lifespan of charge carriers. Among the synthesized materials, GCNTLa demonstrated the highest degradation efficiency, achieving 96 % removal of MXF. This enhanced activity is attributed to the effective suppression of charge recombination, leading to the generation of reactive species responsible for MXF degradation. Additionally, GCNTM showed remarkable stability and reusability, with only a 6 % reduction in efficiency after five cycles, confirming its high reusability and mechanical stability. Our S-scheme photocatalyst demonstrates a marked increase in the degradation rate of Moxifloxacin under visible light irradiation, highlighting its potential for practical environmental applications.

Carrier Mobility Enhancement in Ultrathin-Body InGaAs-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Based on Dual-Gate Modulation

As a promising candidate for More Moore technology, InGaAs-based n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) have attracted growing research interest, especially with InGaAs-on-insulator (InGaAs-OI) configurations aimed at alleviating the short channel effects. Correspondingly, the fabrication of an ultrathin InGaAs body becomes necessary for the full depletion of the channel, while the deteriorated semiconductor–insulator interface-related scattering could severely limit carrier mobility. This work focuses on the exploration of carrier mobility enhancement strategies for 8 nm body-based InGaAs-OI nMOSFETs. With the introduction of a bottom gate bias on the substrate side, the conduction band structure in the channel was modified, relocating the carrier wave function from the InGaAs/Al2O3 interface into the body. Resultantly, the channel mobility with an inversion layer carrier concentration of 1 × 1013 cm−2 was increased by 62%, which benefits InGaAs-OI device application in monolithic 3D integration. The influence of the dual-gate bias from front gate and bottom gate on gate stability was also investigated, where it has been unveiled that the introduction of the positive bottom gate bias is also beneficial for gate stability with an alleviated orthogonal electric field.