This research study investigates the structural and optoelectronic characteristics of & doped for energy renewable device applications, using FPLAW (full potential linear augmented plane wave) technique as applied in WIEN-2k code. The generalized gradient approximation has been utilized as the exchange-correlation functional for electrical and optical characteristic computations with Hubbard correction. Electronic characteristics demonstrate semiconducting nature, with a direct bandgap having a value of 1.1 eV for doped and shows metallic nature, with bandgap 1.4 eV for doped . Doped with and absorb ultraviolet photons substantially also reflect photons in infrared and visible wavelengths slightly. Such optical properties could be beneficial in optoelectronic device applications. When we doped the parent material, we observed overlap between the CB (conduction band) and VB (valence band), with many of them crossing near to the Fermi level. In electronic properties, for each doped material. The dielectric constant extinction coefficient , optical loss , refractive index , reflectivity and absorption coefficient being a function of incident photon energies were calculated to examine optical characteristics. Doped with and absorb ultraviolet photons substantially also reflect photons in infrared and visible wavelengths slightly. Such optical properties could be beneficial in optoelectronic device applications.