Alternating filling of the conduction band valleys by nonequilibrium charge carriers occurs in a semiconductor germanium crystal as a result of modulation of linearly polarized wave's field azimuth. Optical anisotropy in the crystal appeared when it was localized in a magnetic field. The intervalley component of the photomagnetic electromotive force (PEF) arose at the crystal contacts. The intervalley component of the PEF is associated with the intervalley filling of electrons under the effect of light polarization. The spectral dependence of the PEF consists of four resonant extremes. The origin of these extremes is associated with vertical resonance transitions from two subbands of the valence band Еv into the conduction band Еc at point Г of the zone center and point Δ with transitions E1 and E1 + Δ1. The following conclusion was made based on modulation polarimetry properties, Kramers-Kronig relations, and also taking into account the results of other authors. The nature of the extremes is the result of physical differentiation of the spectral dependence of the crystal absorption coefficient on energy (frequency).