Abstract
Terahertz excitation spectroscopy was used for the determination of energy separation between the main (Γ) and subsidiary (L and X) conduction band valleys of GaAs1−xBix. The samples used in this study were 1 µm–1.5 µm thick bismide layers grown by Molecular Beam Epitaxy on GaAs substrates. They contained up to 8% of bismuth as determined by high resolution x-ray diffraction (HR-XRD) and reciprocal space mapping (RSM), taking into account the layer relaxation. It was found that both subsidiary conduction band valleys at L and X points of the Brillouin zone move away from the conduction band minimum at rates of 18 meV/%Bi and 25 meV/%Bi, respectively, with increasing Bi content in the alloy.
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