Conducting Surface States Research Articles

Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

Reliable energy modules and higher-sensitivity, higher-density, lower-powered sensing systems are constantly required to develop wearable electronics and the Internet of Things technology. As an emerging technology, triboelectric nanogenerators have been potentially guiding the landscape of sustainable power units and energy-efficient sensors. However, the existing triboelectric series is primarily populated by polymers and rubbers, limiting triboelectric sensing plasticity to some extent owing to their stiff surface electronic structures. To enrich the current triboelectric group, we explore the triboelectric properties of the topological insulator nanofilm by Kelvin probe force microscopy and reveal its relatively positive electrification charging performance. Both the larger surface potential difference and the conductive surface states of the nanofilms synergistically improve the charge transfer behavior between the selected triboelectric media, endowing the topological insulator-based triboelectric nanogenerator with considerable output performance. Besides serving as a wearable power source, the ultra-compact device array demonstrates innovative system-level sensing capabilities, including precise monitoring of dynamic objects and real-time signal control at the human-machine interface. This work fills the blank between topological quantum matters and triboelectric nanogenerators and, more importantly, exploits the significant potential of topological insulator nanofilms for self-powered flexible/wearable electronics and scalable sensing technologies.

Size-Dependent Thermal Stability and Optical Properties of Ultra-Small Nanodiamonds Synthesized under High Pressure.

Diamond properties down to the quantum-size region are still poorly understood. High-pressure high-temperature (HPHT) synthesis from chloroadamantane molecules allows precise control of nanodiamond size. Thermal stability and optical properties of nanodiamonds with sizes spanning range from <1 to 8 nm are investigated. It is shown that the existing hypothesis about enhanced thermal stability of nanodiamonds smaller than 2 nm is incorrect. The most striking feature in IR absorption of these samples is the appearance of an enhanced transmission band near the diamond Raman mode (1332 cm). Following the previously proposed explanation, we attribute this phenomenon to the Fano effect caused by resonance of the diamond Raman mode with continuum of conductive surface states. We assume that these surface states may be formed by reconstruction of broken bonds on the nanodiamond surfaces. This effect is also responsible for the observed asymmetry of Raman scattering peak. The mechanism of nanodiamond formation in HPHT synthesis is proposed, explaining peculiarities of their structure and properties.

Non-trivial impurity and field effects in topological Kondo insulator SmB6

Topological Kondo Insulator SmB6 is a strongly correlated material where a spin–orbit interaction between the localized odd-parity f-electron and even parity d-electron levels lead to a band inversion and opening of an insulating gap. The non-trivial topology (Z2 = -1) leads to the formation of a topologically protected conducting surface state due to the presence of strong correlation physics. Although the bulk material is known to form a topological Kondo gap, recent magnetic quantum oscillation experiments on SmB6 find an unconventional Fermi surface whose origin remains a matter of intense debate, and the possible role of topological surfacestate and impurity induced in-gap states have been proposed. By utilizing a realistic multi-orbital tight-binding Hamiltonian, this work aims to develop a microscopic model to study the effects of perturbations like external magnetic fields, and impurities on the low energy bulk and topological surface state properties of SmB6. We further examine the role of an external electric field in tuning the non-trivial topological surface state in SmB6 and provide experimentally observable signatures in the local density of state (LDOS) near non-magnetic and magnetic impurities. Additionally, we study the surface Ferromagnetism that arises in SmB6 as observed by magnetoresistance experiments.

Rhombohedral trilayer graphene is more stable than its Bernal counterpart.

Stackings in graphene have a pivotal role in properties that could be useful in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be rhombohedral, which shows flat bands near the Fermi level that are associated with interesting phenomena, such as tunable conducting surface states that can be expected to exhibit spontaneous quantum Hall effect, surface superconductivity, and even topological order. However, the difficulty in exploring rhombohedral graphenes is that in experiments, the alternating, hexagonal stacking is the most commonly found geometry and has been considered to be the most stable configuration for many years. Here we reexamine this stability issue in line with current ongoing studies in various laboratories. We conducted a detailed investigation of the relative stability of trilayer graphene stackings and showed how delicate this aspect is. These few-layer graphenes appear to have two basic stackings with similar energies. The rhombohedral and Bernal stackings are selected using not only compressions but anisotropic in-plane distortions. Furthermore, switching between stable stackings is more clearly induced by deformations such as shear and breaking of the symmetries between graphene sublattices, which can be accessed during selective synthesis approaches. We seek a guide on how to better control - by preserving and changing - the stackings in multilayer graphene samples.

The universal shear conductivity of Fermi liquids and spinon Fermi surface states and its detection via spin qubit noise magnetometry

We demonstrate a remarkable property of metallic Fermi liquids: the transverse conductivity assumes a universal value in the quasi-static (ω → 0) limit for wavevectors q in the regime , where l mfp is the mean free path and p F is the Fermi momentum. This value is in two dimensions (2D), where measures the local radius of curvature of the Fermi surface (FS) in momentum space. Even more surprisingly, we find that U(1) spin liquids with a spinon FS have the same universal transverse conductivity. This means such spin liquids behave effectively as metals in this regime, even though they appear insulating in standard transport experiments. Moreover, we show that transverse current fluctuations result in a universal low-frequency magnetic noise that can be directly probed by a spin qubit, such as a nitrogen-vacancy (NV) center in diamond, placed at a distance z above of the 2D metal or spin liquid. Specifically the magnetic noise is given by , where is the perimeter of the FS in momentum space and C is a combination of fundamental constants of nature. Therefore these observables are controlled purely by the geometry of the FS and are independent of kinematic details of the quasi-particles, such as their effective mass and interactions. This behavior can be used as a new technique to measure the size of the FS of metals and as a smoking gun probe to pinpoint the presence of the elusive spinon FS in two-dimensional systems. We estimate that this universal regime is within reach of current NV center spectroscopic techniques for several spinon FS candidate materials.

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe2 heterostructures. Crystalline ZnO/NbSe2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

Synthesis, Crystal Structure, Symmetry Relationships, and Electronic Structure of Bismuth Carbodiimide Bi2(NCN)3 and Its Ammonia Adduct Bi2(NCN)3·NH3.

Bi2(NCN)3, the first binary pnictogen carbodiimide, and its ammonia derivative Bi2(NCN)3·NH3 have been prepared via nonaqueous liquid-state low-temperature ammonolysis. The crystal structure of Bi2(NCN)3·NH3 in space group Cc solved via single-crystal X-ray diffraction corresponds to a two-dimensional-like motif with layers of NCN2- alternating with honeycomb-like layers of edge-sharing distorted BiN6 octahedra, half of which are also coordinated by molecular ammonia occupying the octahedral holes. By contrast, Bi2(NCN)3 adopts a higher-symmetric C2/c structure with a single Bi position and stronger distortion but empty octahedral voids. In both cases, Bi3+ and its 6s2 lone pair are well mirrored by antibonding Bi-N interactions below the Fermi level. Density functional theory calculations reveal an exothermic reaction for the intercalation of NH3 into Bi2(NCN)3, consistent with the preferential formation of Bi2(NCN)3·NH3 in the presence of ammonia. A Bärnighausen tree shows both compounds to be hettotypic derivatives of the R3̅c M2(NCN)3 corundum structure that express highly distorted hexagonal-close-packed layers of NCN2- in order to accommodate the aspherical Bi3+ cations. Although Bi2(NCN)3 does not resemble the isovalent Bi2Se3 in forming two-dimensional layers and a topological insulator, theory suggests a driving force for the spontaneous formation of Bi2Se3/Bi2(NCN)3 sandwiches and a conducting surface state arising within the uppermost Bi2(NCN)3 layer.

Super-Resonant Transport of Topological Surface States Subjected to In-Plane Magnetic Fields.

Magnetic oscillations of Dirac surface states of topological insulators are typically expected to be associated with the formation of Landau levels or the Aharonov-Bohm effect. We instead study the conductance of Dirac surface states subjected to an in-plane magnetic field in the presence of a barrier potential. Strikingly, we find that, in the case of large barrier potentials, the surface states exhibit pronounced oscillations in the conductance when varying the magnetic field, in the absence of Landau levels or the Aharonov-Bohm effect. These novel magnetic oscillations are attributed to the emergence of super-resonant transport by tuning the magnetic field, in which many propagating modes cross the barrier with perfect transmission. In the case of small and moderate barrier potentials, we identify a positive magnetoconductance due to the increase of the Fermi surface by tilting the surface Dirac cone. Moreover, we show that for weak magnetic fields, the conductance displays a shifted sinusoidal dependence on the field direction with period π and phase shift determined by the tilting direction with respect to the field direction. Our predictions can be applied to various topological insulators, such as HgTe and Bi_{2}Se_{3}, and provide important insights into exploring and understanding exotic magnetotransport properties of topological surface states.

Effect of Magnetic (Nd) Doping on Electrical and Magnetic Properties of Topological Sb2Te3 Single Crystal

Here, we report the growth and characterization of single crystals of NdxSb2-xTe3 (x = 0 and 0.1), by solid-state reaction route via self-flux method. The phase and layered growth are confirmed through X-ray diffraction and scanning electron microscopy respectively. A slight contraction in lattice parameters is seen after Nd doping. Also a minute shift in vibrational modes of recorded Raman spectra has been observed by doping of Nd in Sb2Te3. The magneto-resistance values under magnetic field of 5 Tesla for Sb2Te3 are 75% at 2.5 K and 60% at 20 K, but only 40% at 5 K for Nd0.1Sb1.9Te3. DC magnetic measurements exhibit expected diamagnetic and paramagnetic behaviors for pure and Nd doped crystals respectively. A cusp-like behavior is observed in magneto-conductivity of both pure and Nd doped crystals at low magnetic fields (< 1 Tesla) which is analyzed using Hikami-Larkin-Nagaoka (HLN) model. For Sb2Te3, the fitted parameters α are −1.02 and −0.58 and the phase coherence lengths Lφ are 50.8(6)nm and 34.9(8)nm at temperatures 2.5 and 20 K respectively. For Nd0.1Sb1.9Te3, α is −0.29 and Lφ is 27.2(1)nm at 5 K. The α values clearly show the presence of weak anti-localization effect in both pure and Nd doped samples. Also with Nd doping, the contribution of bulk states increases in addition to conducting surface states in overall conduction mechanism.

Supercritically exfoliated Bi2Se3 nanosheets for enhanced photocatalytic hydrogen production by topological surface states over TiO2

Owing to the unique electronic properties of layered materials, topological insulators have interestingly grabbed much attention in the field of photocatalytic water splitting. Nowadays, 2D layered materials were composited with semiconductor photocatalysts, encourage much as it provides enormous active sites and also significantly prevent photogenerated charge recombination. Especially, Bi2Se3 possesses exceptional properties like topologically preserved conducting surface states with bulk insulating behavior and high surface area, which provides unconventional electron dynamics, resulting in facile electron transport and effective charge separation to photocatalyst. So far, several methods have been attempted to synthesize few-layered Bi2Se3 nanosheets from its bulk crystals. Here, a unique attempt is made and succeeded to exfoliate bulk Bi2Se3 to few layered nanosheets via surfactant free supercritical fluid processing using N-Methyl-2-pyrrolidone (NMP) as an exfoliating agent, with a short reaction time of 15 min. The exfoliation of Bi2Se3 crystal was confirmed by several characterization techniques, such as XRD, SEM, Raman, and HR-TEM. Furthermore, different weight percentages of exfoliated Bi2Se3 sheets/anatase TiO2 nanoparticles were prepared and examined the photocatalytic activity using glycerol as a hole scavenger. Among them, 15 wt.% Bi2Se3 coupled TiO2 nanocomposite showed enormous hydrogen evolution rate of 84.9 mmol h-1g-1cat, which is 80 times higher than that of TiO2 nanoparticles. In addition, the photostability of the nanocomposite was also verified, where it retains 94% of activity even after 4 cycles of continuous experiments. The improved rate of H2 production was understood by theoretical calculations that topologically preserved conducting surface states of co-catalyst, Bi2Se3 nanosheets is supported to high mobile and scatter free electrons. It mediates the transport of electrons with TiO2 nanoparticles that helped the effective charge separation. Thus, it proves a promising candidate for photocatalytic hydrogen production.

Resistively detected NMR as a probe of the topological nature of conducting edge/surface states

Electron spins in edge or surface modes of topological insulators (TIs) with strong spin-orbit coupling cannot be directly manipulated with microwaves due to the locking of electron spin to its momentum. We show by contrast that a resistively detected nuclear magnetic resonance (RDNMR) based technique can be used to probe the helical nature of surface conducting states. In such experiments, one applies a radio frequency (RF) field to reorient nuclear spins that then couple to electronic spins by the hyperfine interaction. The spin of the boundary electrons can thereby be modulated, resulting in changes in conductance at nuclear resonance frequencies. Here, we demonstrate that the conductivity is sensitive to the direction of the applied magnetic field with respect to the helicity of the electrons. This dependence of the RDNMR signal on angle probes the nature of the conductive edge or surface states. In the case of 3D TI in the quantum Hall regime, we establish that the dominant mechanism responsible for the conductance change in a RDNMR experiment is based on the Overhauser field effect. Our findings indicate that the same physics underlying the use of RDNMR to probe TI states also enables us to use RF control of nuclear spins to coherently manipulate topologically protected states which could be useful for a new generation of devices.

Dual‐Band Absorption Effect in a Topological‐Insulator‐Based Tamm Plasmon Multilayer System

Topological insulator materials have attracted greater attention in recent years due to their conducting surface state and insulating bulk state. The unique surface states in topological insulators offer potential applications in photonics and optoelectronics. Herein, topological insulators’ near‐infrared plasmonic behavior is utilized to demonstrate a tunable double‐mode absorber that shows an electromagnetically induced transparency (EIT)‐like effect. A composite structure is formed by sandwiching a photonic crystal heterostructure between topological insulator layers. The transfer matrix method is used to examine the optical response. The evolution of the modes with changes in layer thicknesses, grating period number, and propagating angle is also investigated. The study is further extended to multichannel optical absorption by making changes in the composite structure period, and the resultant absorption spectrum shows a multichannel EIT‐like effect.

Weyl, Dirac and high-fold chiral fermions in topological quantum matter

Quantum materials hosting Weyl fermions have opened a new era of research in condensed matter physics. First proposed in 1929 in particle physics, Weyl fermions have yet to be observed as elementary particles. In 2015, Weyl fermions were detected as collective electronic excitations in the strong spin-orbit coupled material tantalum arsenide, TaAs. This discovery was followed by a flurry of experimental and theoretical explorations of Weyl phenomena in materials. Weyl materials naturally lend themselves to the exploration of the topological index associated with Weyl fermions and their divergent Berry curvature field, as well as the topological bulk-boundary correspondence giving rise to protected conducting surface states. Here, we review the broader class of Weyl topological phenomena in materials, starting with the observation of emergent Weyl fermions in the bulk and of Fermi arc states on the surface of the TaAs family of crystals by photoemission spectroscopy. We then discuss some of the exotic optical and magnetic responses observed in these materials, as well as the progress in developing some of the related chiral materials. We discuss the conceptual development of high-fold chiral fermions, which generalize Weyl fermions, and we review the observation of high-fold chiral fermion phases by taking the rhodium silicide, RhSi, family of crystals as a prime example. Lastly, we discuss recent advances in Weyl-line phases in magnetic topological materials. With this Review, we aim to provide an introduction to the basic concepts underlying Weyl physics in condensed matter, and to representative materials and their electronic structures and topology as revealed by spectroscopic studies. We hope this work serves as a guide for future theoretical and experimental explorations of chiral fermions and related topological quantum systems with potentially enhanced functionalities.

Metallic conduction through van der Waals interfaces in ultrathin hbox{Bi}_2hbox{Te}_3 films

While the van der Waals (vdW) interface in layered materials hinders the transport of charge carriers in the vertical direction, it serves a good horizontal conduction path. We have investigated electrical conduction of few quintuple-layer (QL) hbox {Bi}_2hbox {Te}_3 films by in situ four-point probe conductivity measurement. The impact of the vdW (Te–Te) interface appeared as a large conductivity increase with increasing thickness from 1 to 2 QL. Angle-resolved photoelectron spectroscopy and first-principles calculations reveal the confinement of bulk-like conduction band (CB) state into the vdW interface. Our analysis based on the Boltzmann equation showed that the conduction of the CB has a long mean free path compared to the surface-state conduction. This is mainly attributed to the spatial separation of the CB electrons and the donor defects located at the Bi sites.

Reversible engineering of topological insulator surface state conductivity through optical excitation

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn–Bi1.1Sb0.9Te2S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.

High performing flexible optoelectronic devices using thin films of topological insulator

Topological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films

The contribution of topological insulator surface states to their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality CuxBi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron–electron interaction (2D EEI) effect becomes more evident below ∼25 K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the CuxBi2Se3 films was verified by the Hikami–Larkin–Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspects for the further study of the transport properties of disordered topological insulators.

Sb2Te3 nanosheets: Topological insulators with extraordinary electromagnetic response behaviors

Topological insulators exhibit a new variety of unusual phenomena associated with topologically protected gapless surface states. Interestingly, most topological insulators are possibly outstanding electromagnetic shielding materials due to the easily adjustable electric transport performance, which can be controlled by regulating nanostructures based on conducting surface states. Herein, a series of Sb2Te3 nanosheets with different thicknesses were prepared by a hydrothermal method. The electrical conductivity increases as the thickness of the topological nanosheet decreases, so the nanosheet aggregates exhibit an extraordinary electromagnetic response behavior different from metallic materials, which is beneficial to achieving excellent electromagnetic shielding in applications of integrated circuit field. Moreover, Sb2Te3 nanosheet aggregates show a positive temperature coefficient of electrical conductivity that it increases monotonically with increasing temperature in the entire range of 313–573 K. The effect of positive temperature coefficient implies that the longitudinal conductance plays a dominant role in Sb2Te3 nanosheet aggregates. An equivalent circuit model was proposed to describe the unique electrical conductance behavior of nanosheet aggregates for topological insulators. The outstanding electromagnetic shielding performance and positive temperature correlation make Sb2Te3 nanosheets emerging in next-generation electronic equipments and aerospace applications in high-temperature environments.

Positronium formation at 4H SiC(0001) surfaces

Positronium formation at 4H SiC(0001) surfaces were investigated upon the removal of natural oxide layers by hydrofluoric acid etching and heat treatment at 1000 K in ultra-high vacuum. Two types of positronium were observed in the positronium time-of-flight (PsTOF) measurements irrespective of conduction type and surface polarity. One type formed the major part of the PsTOF spectrum with a maximum energy of 4.7 ± 0.3 eV. This energy exceeded the theoretical value calculated with valence electrons. The PsTOF spectrum shape was different from those of metal surfaces, suggesting that the surface state electrons or conduction electrons need to be considered as the positronium source. Another positronium appeared at 1000 K in the tail of the PsTOF spectrum with a maximum energy of 0.2–0.5 eV. This thermally-assisted athermal positronium may be formed via the surface state positrons and electrons.

Enhanced power factor and thermoelectric performance for n-type Bi2Te2.7Se0.3 based composites incorporated with 3D topological insulator nanoinclusions

n-type Bi2Te2.7Se0.3 (BTS) alloy is a state-of-the-art room temperature thermoelectric material used for refrigeration commercially. However, wide application is limited by its low performance. Here, we show that incorporation of nano-sized 3D topological insulator (3D-TI) Bi2Se3 in Bi2Te2.7Se0.3 bring about a large electron mobility and increased electrical conductivity owing to the enhanced contribution of topologically protected conducting surface states as well as large Seebeck coefficient due to energy dependent carrier scattering. Besides, the incorporation of 3D-TI nanoinclusions leads to enhanced phonon scattering. As a result, addition of 0.3 vol% of Bi2Se3 in BTS results in ~ 36% increase in power factor and ~ 16% decrease in total thermal conductivity, leading to a large figure of merit ZTmax = 1.28 (at 375 K) and a large average ZTave = 1.16 (at T = 300–525 K), which are 62% and 59% greater than that of BTS, respectively.