Abstract
The contribution of topological insulator surface states to their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality CuxBi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron–electron interaction (2D EEI) effect becomes more evident below ∼25 K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the CuxBi2Se3 films was verified by the Hikami–Larkin–Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspects for the further study of the transport properties of disordered topological insulators.
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