Conductance Voltage Research Articles

Frequency and voltage dependent of electrical and dielectric properties of Ag/GO doped NiO/p-Si/Al MOS structures under darkness and light

At studying, we searched the frequency and voltage dependency of the electrical and dielectric traits of a nano-made NiO-contributed GO thin film enlarged on a p-type silicon substrate using sol-gel technique. The electrical and dielectric features of Ag/GO-NiO/p-Si were investigated by capacitance–voltage (C–V) and conductance–voltage (G/ ω–V) indications in the frequency interval of 10 kHz–1000 kHz below dark and illumination at ambient temperature. While the capacitance and series resistance (Rs) values decrease with increment of frequency and increment trend in conductance was observed with the increasement of frequency. These decrement/increment trend observed at greater frequencies are attributed to existence of interface state densities. After, the frequency dependence of dielectric constant (εʼ), dielectric loss (εʼʼ), loss tangent (tanδ), ac electrical conductivity (σac) and complex impedance (Z∗) of Ag/GO-NiO/p-Si structures were investigated in the frequency by means of the capacitance–voltage (C–V) and conductance-voltage (G/w-V) indications. The experimental findings showed that εʼ, εʼʼ and σac were strongly frequency dependent.

Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications

This article examines the impact of various interface trap charges on silicon carbide-based gate—stack, dual metal, surrounding gate, FET (4H-SiC-GSDM-SGFET). It has been contrasted for performance with silicon carbide (4H-SiC)-based dual metal, surrounding gate, FET (4H-SiC-DM- SGFET). For both devices, output characteristics including transconductance (gm), output conductance (gd), drain current (Ids), gate capacitance (Cgg), cutoff frequency (fT) and threshold voltage (Vth) have been examined. Surface potential and electron concentration were also inspected using a contour plot for both the device structures. A gate-stack with a high k- dielectric, Lanthanum oxide (La2O3) along with gate dielectric layer Aluminum oxide (Al2O3) was used for proposed structure implementation. Additionally, we investigated how trap charges affect noise figure (NF) and noise conductance (NC). Also, a CMOS inverter has been developed and its output characteristics have been compared for both the device architectures. ATLAS 3-D device simulator has been employed to conduct the simulations.

Global MPPT controllers for enhancing dynamic performance of photovoltaic systems under partial shading condition

This research focuses on the development and evaluation of global maximum power point tracking MPPT controllers for enhancing the dynamic performance of Photovoltaic (PV) systems under partial shading conditions. Three different controllers, namely Proportional-Integral (PI), Fractional-Order PI (FOPI), and Fuzzy Logic Controllers (FLC), are studied in conjunction with a modified Incremental Conductance (IC) and Fractional Open-Circuit Voltage (FOCV) algorithms. The proposed controllers with a novel optimization algorithm called Atom Search Optimization Algorithm (ASOA) are compared with classical control. The objective is to investigate the effectiveness of the global MPPT controllers in achieving higher tracking accuracy, faster convergence, and improved stability under varying shading conditions. The study involves extensive simulations using a representative PV system model subjected to different shading scenarios. The results demonstrate that the proposed global MPPT controllers with the ASOA algorithm, when integrated with the modified MPPT algorithms, outperform the classical control techniques in terms of dynamic performance and response to partial shading conditions. The suggested ASOA-based fuzzy IC MPPT controllers can reach the MPP more quickly with a shorter settling time and a better tracking response. Furthermore, with a reduced settling time of about 1.9 % and an average power harvesting efficiency of over 97.9 %, ASOA-based fuzzy IC MPPT controllers offer the best harvesting characteristics. The controller exhibits superior tracking accuracy and stability, mitigating the effects of shading-induced multiple peaks in the P-V curve.

Investigation of hybrid CuPc-doped ZnO/p-silicon photodiodes for photonic and electronic applications

Copper phthalocyanine (CuPc) doped zinc oxide (ZnO) interlayered Al/p-Si Schottky barrier diodes (SBDs) were systematically fabricated utilizing spin coating technique. This study was undertaken to meticulously assess the influence of varying concentrations of CuPc on the intricate electrical and photodiode characteristics of these devices. The investigation involved the characterization of the current–voltage (I–V) characteristics configured with distinct different doping concentrations of CuPc such as 0.05 wt%,1 wt%, 2 wt%, under a wide range of voltages (± 5 V) and illumination irradiances. These measurements enabled the calculation of various critical electrical variables, such as the ideality factor (n), barrier height (ΦB), series resistance (Rs), shunt resistance (Rsh), interface states density (Nss) and their response under various illumination levels (between 10 and 100 mW/cm2) and under dark condition. An increase in the reverse current as the illumination increases suggested the potential utility of these SBDs as photodiodes, photosensors, or photodetectors. Notably, the linear dynamic range (LDR), a crucial factor for image sensors which obtained around 14 for all photodiodes. The photodiodes exhibited a good rectification ratio (RR) of approximately 104. The results obtained indicate that the rectifying properties of the structures can be controlled by CuPc doping. In addition, the results indicated that the presence of CuPc significantly influenced the values of n, ΦB, Rs/Rsh, and Nss. To further analyze the devices, capacitance–voltage (C–V) and conductance–voltage (G–V) measurements were carried out to determine parameters such as diffusion potential (VD), dopant acceptor atoms concentration (NA), Fermi energy level (EF), and width of depletion layer (WD) at both 1 kHz and 1 MHz. The measurements revealed that the capacitance values were higher at low frequencies compared to high frequencies, and this behavior was attributed to Nss. In summary, this study suggests that the manufactured photodiodes have the potential to be employed as photodiodes, sensors, or detectors in optical sensing applications, and their performance can be tailored by adjusting the concentration of CuPc in the ZnO interlayered structures. The discerned outcomes revealed the substantial influence of CuPc concentration on key electrical parameters, with conspicuous trends noted in the values of n, ΦB, Rs/Rsh, and Nss. Furthermore, the observed increase in the reverse current as the illumination level increases highlights the potential utility of these SBDs as sensitive photodiodes/sensors/detectors.

Implementing Different MPPT Algorithm For Solar Charge Controller

In this paper, MPPT methods such as Perturb and Observe (P and O), Incremental Conductance and Fractional open Circuit Voltage method has been studied. Also, two converter topology, Buck and Synchronous buck converter has been Studied. Hardware implementation of the solar charge controller is done based on the software simulation data and results. Hardware is developed for 1kW system and 48V, 100Ah battery is going to be charged with it. Two MPPT method with synchronous buck converter has been implemented in hardware. This designed hardware has been tested with different irradiance condition. This proposed system can be used in golf cart to make it a stand-alone system with taking care of all protection measures.

Large conductance voltage-and calcium-activated K+ (BK) channel in health and disease.

Large Conductance Voltage- and Calcium-activated K+ (BK) channels are transmembrane pore-forming proteins that regulate cell excitability and are also expressed in non-excitable cells. They play a role in regulating vascular tone, neuronal excitability, neurotransmitter release, and muscle contraction. Dysfunction of the BK channel can lead to arterial hypertension, hearing disorders, epilepsy, and ataxia. Here, we provide an overview of BK channel functioning and the implications of its abnormal functioning in various diseases. Understanding the function of BK channels is crucial for comprehending the mechanisms involved in regulating vital physiological processes, both in normal and pathological conditions, controlled by BK. This understanding may lead to the development of therapeutic interventions to address BK channelopathies.

BK ZERO isoform HEK293 stably transfected cell lines differing 3'UTRs to assess miR-9 regulation.

Research has identified the large conductance voltage- and calcium-activated potassium channel (BK) as a key regulator of neuronal excitability genetically associated to behavioral alcohol tolerance. Sensitivity to ethanol at the molecular level is characterized by acute potentiation of channel activity. BK isoforms show variations in alcohol sensitivity and are differentially distributed on the plasma membrane surface in response to prolonged exposure. MicroRNA (MiRNA) targeting of alcohol-sensitive isoforms coupled with active internalization of BK channels in response to ethanol are believed to be key in establishing homeostatic adaptations that produce persistent changes within the plasma membrane of neurons. In fact, microRNA 9 (miR-9) upregulated expression is a key event in persistent alcohol tolerance mediating acute EtOH desensitization of BK channels. The exact nature of these interactions remains a current topic of discussion. To further study the effects of miR-9 on the expression and distribution of BK channel isoforms we designed an experimental model by transfecting human BK channel isoforms ZERO heterologous constructs in human embryonic kidney cells 293 (HEK293) cells respectively expressing 2.1 (miR-9 responsive), 2.2 (unresponsive) and control (no sequence) 3'untranslated region (3'UTR) miRNA recognition sites. We used imaging techniques to characterize the stably transfected monoclonal cell lines, and electrophysiology to validate channel activity. Finally, we used immunocytochemistry to validate isoform responsiveness to miR-9. Our findings suggest the cell lines were successfully transfected to express either the 2.1 or 2.2 version of ZERO. Patch clamp recordings confirm that these channels retain their functionality and immunohistochemistry shows differential responses to miR-9, making these cells viable for use in future alcohol dependence studies.

Safinamide, an inhibitor of monoamine oxidase, modulates the magnitude, gating, and hysteresis of sodium ion current

BackgroundSafinamide (SAF), an α-aminoamide derivative and a selective, reversible monoamine oxidase (MAO)-B inhibitor, has both dopaminergic and nondopaminergic (glutamatergic) properties. Several studies have explored the potential of SAF against various neurological disorders; however, to what extent SAF modulates the magnitude, gating, and voltage-dependent hysteresis [Hys(V)] of ionic currents remains unknown.MethodsWith the aid of patch-clamp technology, we investigated the effects of SAF on voltage-gated sodium ion (NaV) channels in pituitary GH3 cells.ResultsSAF concentration-dependently stimulated the transient (peak) and late (sustained) components of voltage-gated sodium ion current (INa) in pituitary GH3 cells. The conductance–voltage relationship of transient INa [INa(T)] was shifted to more negative potentials with the SAF presence; however, the steady-state inactivation curve of INa(T) was shifted in a rightward direction in its existence. SAF increased the decaying time constant of INa(T) induced by a train of depolarizing stimuli. Notably, subsequent addition of ranolazine or mirogabalin reversed the SAF-induced increase in the decaying time constant. SAF also increased the magnitude of window INa induced by an ascending ramp voltage Vramp. Furthermore, SAF enhanced the Hys(V) behavior of persistent INa induced by an upright isosceles-triangular Vramp. Single-channel cell-attached recordings indicated SAF effectively increased the open-state probability of NaV channels. Molecular docking revealed SAF interacts with both MAO and NaV channels.ConclusionSAF may interact directly with NaV channels in pituitary neuroendocrine cells, modulating membrane excitability.

Threshold Voltage Extraction Using Conductance–Voltage Method for Nano‐Organic/Oxide Thin‐Film Transistors: Comparative Study of P‐ and N‐Type Devices

Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.

Silicon distyryl-BODIPY hybrid photodiode: moving a step ahead from organic interface layer to type II band alignment

Organic-inorganic heterojunctions are becoming an attractive topic of research for their applications in hybrid photodetectors, solar cells, resistive switching memory devices etc. The easy chemical synthesis and low-cost fabrication for organic thin films come with the benefit of high light absorptivity, high fluorescence quantum yield and band gap tunability along with high charge carrier lifetime that could be combined with the existing silicon-based technology. In this aspect, various organic dyes utilised as an interfacial layer with silicon Schottky junction are reported earlier. However, the photo responses are quite limited. Here, in this report, a Type II Silicon/Distyryl-BODIPY p-n junction has been proposed as an organic-inorganic hybrid photodetector which has not been explored extensively yet. The transformation from a mere organic interfacial layer to band aligned junction enhances the charge carrier separation providing higher photo-responsive behaviour. With the simple spin-coating technique, the Distyryl-BODIPY derivative with phenolic functionalities is coated to fabricate the p-n junction diode. To further improve the performance, pyramidal surface texturization on silicon is deployed using wet chemical etching that supplements the light absorption with internal reflections. Both the devices have been investigated for their photo-response characteristic where a high photo-responsivity of 4353 A W−1 is attained for the textured device as compared to 118 A W−1 for the planar silicon device at a − 3 V bias with an ultra-high specific detectivity of 1012 Jones and 1010 Jones respectively. The behaviours of interfacial states have been demonstrated using the capacitance (C), conductance (G) and series resistance (RS) vs voltage (V) curves at different frequencies. Further calculations of interfacial state density revealed the existence of 1000 times higher interfacial states in planar device leading to lower performance as compared to pyramidal device. The findings in this report suggest that dye-based organic-inorganic heterostructures find potential applications in photodetectors and other optoelectronic devices.

Evaluation of synthesized new cellulose derivatives to make diodes and investigation of electrical and photoelectrical characteristics of these diodes

Firstly, two new cellulose derivatives (CelB33′44′TD and Cel44′OA) were synthesized, which were confirmed by FTIR and 13C CP-MAS NMR spectra. These derivatives were then used in the construction of new diodes (Au/CelB33′44′TD/p-Si and Au/Cel44′OA/p-Si). Later, the atomic force microscope (AFM) images of the interface layers were taken, and the current–voltage (I–V) graphs of the diodes were determined both in the dark and under different illumination intensities (DIIs). Using the Bethe's thermionic emission (TE) theory the ideality factors and barrier heights of the diodes, using the Cheung & Cheung functions the ideality factors, series resistances and barrier heights of the diodes, and using the Norde function the barrier heights and series resistances of the diodes were calculated. Finally, the capacitance–voltage (C–V) and conductance–voltage (G–V) graphs of the diodes at different frequencies (DFs) were examined and some frequency-dependent electrical parameters of the diodes were calculated using the 1/C2–V plots.

Enhanced electrical performance of InGaSnO thin-film transistors by designing a dual-active-layer structure

In this study, dual-active-layer InGaSnO (IGTO) thin-film transistors (TFTs) were designed, and their electrical properties were investigated. Consequently, compared with the single-layer IGTO (pure Ar) TFTs, the dual-layer IGTO TFTs exhibited improved electrical properties, including a high field-effect mobility of 25.1 cm2 V−1 s−1, a low threshold voltage of 0.8 V, a high on/off current ratio of 1 × 108, a small subthreshold slope of 300 mV/decade, and a low off current. Additionally, the dual-layer IGTO TFTs showed superior stability for small Vth shifts of −1.9 V and 1.8 V under gate bias stress test conditions. Band structure analysis indicated that a thin front layer of IGTO (pure Ar) can provide an appropriate carrier concentration (Ne) near the IGTO (pure Ar)/IGTO (Ar/O2) interface, whereas a thick layer of IGTO (Ar/O2) can control the channel conductance and threshold voltage of IGTO TFTs. Moreover, atomic force microscopy, X-ray photoelectron spectroscopy, and Hall effect measurement results showed that the surface roughness, oxygen vacancies, Ne, and total trap density of IGTO (Ar/O2) films and TFTs were reduced by increasing the oxygen flow rate. Over all, the high performance dual-active-layer IGTO TFTs provides insights that can contribute to developing a new generation of transparent oxide thin-film electronics.

N-terminal region is responsible for mHv1 channel activity in MDSCs.

Voltage-gated proton channels (Hv1) are important regulators of the immunosuppressive function of myeloid-derived suppressor cells (MDSCs) in mice and have been proposed as a potential therapeutic target to alleviate dysregulated immunosuppression in tumors. However, till date, there is a lack of evidence regarding the functioning of the Hvcn1 and reports on mHv1 isoform diversity in mice and MDSCs. A computational prediction has suggested that the Hvcn1 gene may express up to six transcript variants, three of which are translated into distinct N-terminal isoforms of mHv1: mHv1.1 (269 aa), mHv1.2 (269 + 42 aa), and mHv1.3 (269 + 4 aa). To validate this prediction, we used RT-PCR on total RNA extracted from MDSCs, and the presence of all six predicted mRNA variances was confirmed. Subsequently, the open-reading frames (ORFs) encoding for mHv1 isoforms were cloned and expressed in Xenopus laevis oocytes for proton current recording using a macro-patch voltage clamp. Our findings reveal that all three isoforms are mammalian mHv1 channels, with distinct differences in their activation properties. Specifically, the longest isoform, mHv1.2, displays a right-shifted conductance-voltage (GV) curve and slower opening kinetics, compared to the mid-length isoform, mHv1.3, and the shortest canonical isoform, mHv1.1. While mHv1.3 exhibits a V0.5 similar to that of mHv1.1, mHv1.3 demonstrates significantly slower activation kinetics than mHv1.1. These results suggest that isoform gating efficiency is inversely related to the length of the N-terminal end. To further explore this, we created the truncated mHv1.2 ΔN20 construct by removing the first 20 amino acids from the N-terminus of mHv1.2. This construct displayed intermediate activation properties, with a V0.5 value lying intermediate of mHv1.1 and mHv1.2, and activation kinetics that were faster than that of mHv1.2 but slower than that of mHv1.1. Overall, these findings indicate that alternative splicing of the N-terminal exon in mRNA transcripts encoding mHv1 isoforms is a regulatory mechanism for mHv1 function within MDSCs. While MDSCs have the capability to translate multiple Hv1 isoforms with varying gating properties, the Hvcn1 gene promotes the dominant expression of mHv1.1, which exhibits the most efficient gating among all mHv1 isoforms.

Spin-to-charge conversion in tantalum with structural phase transition

Tantalum (Ta), which is widely used as a spin sink material, especially for its β-phase with strong spin-orbit coupling (SOC) exhibits a high spin-charge interconversion efficiency. In this work, we investigate the spin-to-charge conversion (SCC) process of Ta/Permalloy (Ta/Py) bilayers with Ta having different crystalline phases. The structural phase transition of Ta film from tetragonal to body-centered cuboidal (BCC) which corresponds to β- and α-phases was obtained via high-temperature annealing in vacuum atmosphere. By applying ferromagnetic resonance (FMR) and inverse spin Hall effect (ISHE) measurements, the measured spin mixing conductance and SCC DC voltage show a strong correlation with the crystalline phase of Ta thin films in Ta/Py bilayers. A significant enhancement of spin mixing conductance in (β + α)-Ta/Py has been found and a higher SCC DC voltage was detected for α-phase Ta film with a weak SOC than β-phase Ta film with a strong SOC. These results reveal the significant role of the interfacial constitution in heavy metal/ferromagnet bilayers for spin current transportation, which can promote the development of high-efficiency spin-based devices through interfacial engineering.

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor.

We used capacitance-voltage (C-V), conductance-voltage (G-V), and noise measurements to examine the carrier trap mechanisms at the surface/core of an AlGaN/GaN nanowire wrap-gate transistor (WGT). When the frequency is increased, the predicted surface trap density promptly drops, with values ranging from 9.1 × 1013 eV-1∙cm-2 at 1 kHz to 1.2 × 1011 eV-1∙cm-2 at 1 MHz. The power spectral density exhibits 1/f-noise behavior in the barrier accumulation area and rises with gate bias, according to the 1/f-noise features. At lower frequencies, the device exhibits 1/f-noise behavior, while beyond 1 kHz, it exhibits 1/f2-noise behavior. Additionally, when the fabricated device governs in the deep-subthreshold regime, the cutoff frequency for the 1/f2-noise features moves to the subordinated frequency (~102 Hz) side.

Effect of Gadolinium on Electrical Properties of Polyethyleneimine Functionalized and Nitrogen‐Doped Graphene Quantum Dot Nanocomposite Based Diode

AbstractCarbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or synthetic methods may lead to new applications. Gadolinium‐doped polyethyleneimine (PEI) functionalized and nitrogen‐doped graphene quantum dots (GdNPs‐PEI@N‐GQDs) are synthesized by a hydrothermal method to determine how doping carbon‐based materials with Gd alters the electrical properties of the structure. The electrical properties of the GdNPs/PEI@N‐GQDs nanocomposite‐based diode are investigated using the current–voltage (I–V) technique and the capacitance and conductance voltage (C–V & G/ω–V) technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V. The rectification ratio (RR) is found to be 14 at a voltage of ±5 V. The rectifying behavior of the diode changes to an ohmic behavior after doping with Gd, compared to the Gd‐free PEI@N‐GQDs sample (2.8 × 104 at ±5 V). The results are expected to have an impact on the understanding of carbon‐based electronics technology.

Spin transport characteristics modulated by the GeBi interlayer in Y3Fe5O12/GeBi/Pt heterostructures

For the past few years, germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology. The main challenges in the development of modern semiconductor spintronics are the generation, detection, and manipulation of spin currents. Here, the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y3Fe5O12/GeBi/Pt heterostructures were investigated systematically. The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted. The spin-injection efficiency in the Y3Fe5O12/GeBi/Pt heterostructures is comparable to that of the Y3Fe5O12/Pt bilayer, and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness. Furthermore, the band gap of the GeBi layer was tuned by changing the Bi content. The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer. Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

Strain Tune Suspended MoS2 for Polarization Photodetection

In situ modulation of molybdenum disulfide (MoS2) structure and breaking its isotopic optical property are crucial for fabricating high‐performance multidimensional photodetectors. However, achieving this remains a challenge. Herein, by introducing a cavity in the channel, the strain tunable suspended MoS2 phototransistor is fabricated. By pumping the environment, a pressure difference between the environment and cavity is generated, inducing strain in the MoS2. Simulation reveals the strain can be tuned up to 0.598% by changing environment pressure. The electrical and photoelectrical properties exhibit significant tuning in response to pressure. During this experiment, the conductance of MoS2 under different pressures shows considerable differentiation between 50 and 100 kPa. As light wavelength decreases, the trend of photocurrent increasing under different pressure becomes more apparent. The differential conductance–voltage curve of different wavelengths at 10 Pa is more dispersed than that at 101 kPa. Those results demonstrate the coupling effect between light and strain. Interestingly, the symmetric photoelectrical property of MoS2 can be broken, resulting in polarization detection. At a pressure of 60 kPa, the dichroic ratio reaches 1.38, similar to intrinsic anisotropic two‐dimensional materials. This can be attributed to the breaking of symmetric structure caused by strain.

Solar Charging Station for LEV: A Design and Feasibility Study

Abstract: As the need for sophisticated transportation system rises due to economic development and cultural comfort, global warming and some dangerous climate changes are becoming more frequent. Every government is promoting the use of electric vehicles to combat the problem of global warming caused by the transportation.(EVs), As the number of electric vehicles on the road increases, charging EVs using infrastructure based on fossil fuel is neither efficient nor cost effective. As a result, an electric vehicle charging station that uses renewable energy has tremendous potential and control. In the present situation, a battery energy storage system and a solar powered electric vehicle charging station are necessary. For effective power management in the charging station between solar, BESS, grid and EVs, an efficient charging station design with Incremental conductance (INC) voltage controlled MPPT, PI controller, grid with inverter is design and evaluated in MATLAB/Simulink. Additional grid assistance is advised to ensure that the charging station has uninterrupted power without adding to the load on the grid.

Experimentally Validated Gate-Lag Simulations of AlGaN/GaN HEMTs Using Fermi Kinetics Transport

This article presents for the first time a direct connection between gate lag observed in drain current transient measurements of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and traps located in the barrier of the transistor epitaxy. Semiclassical numerical simulations are presented using the Air Force Research Laboratory’s (AFRL’s) Fermi kinetics transport (FKT) solver and are validated with drain current transient measurements. Capacitance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C} - {V}$ </tex-math></inline-formula> ) and conductance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${G} - {V}$ </tex-math></inline-formula> ) measurements are also presented to provide further insights into the trap location used in the FKT simulations. These simulations indicate that equivalent defects located specifically at the AlGaN barrier/GaN cap interface of an AFRL GaN HEMT with a density of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7.5\times 10^{{12}}$ </tex-math></inline-formula> cm−2 and positioned 1.464 eV below the GaN cap conduction band edge were the salient traps linked to the gate-lag phenomenon. The study highlights the importance of experimentally benchmarked device simulation for trapping analysis in GaN HEMTs and may provide significant insights into device engineers for mitigating trapping effects in state-of-the-art GaN technologies.