Abstract
Threshold voltage is an essential component for a transistor to operate properly. In this work, an alternate technique for obtaining the threshold voltage, which is referred to as the conductance–voltage method, is suggested. In this technique, the threshold voltage is estimated by measuring the change in drain current with an applied gate voltage when the device transits from the weak accumulation to the strong accumulation mode of operation. The 2D simulations are then used to apply this strategy to pentacene‐based and amorphous indium‐gallium‐zinc‐oxide‐based thin‐film transistors (TFTs) in their linear region of operation. These seem promising, and the technique offers a useful tool for enhancing the functionality of complementary organic/oxide TFTs in the future.
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