Abstract
Bismuth‐based perovskite materials have concerned significant attention due to their low‐toxic and stable properties. However, achieving smooth and dense thin films for the preferential growth of bismuth‐based perovskite along the c‐axis, which is conducive to the preparation of solar cells, is challenging. Therefore, using halogen atoms to partially replace iodine atoms and constrain anisotropic growth has been shown to be an effective method for obtaining high‐quality perovskite films. Herein, Br doping with varying concentrations is used to treat bismuth‐based perovskite films with larger and denser grains compared to those without doping. When a small amount of Br ions is doped, the surface of the perovskite layer becomes more uniform, significantly improving the compactness of the perovskite film. Additionally, proper Br doping can reduce internal defects in the films, effectively inhibiting nonradiative recombination, enhancing light absorption, and increasing carrier lifetime. The optimal power conversion efficiency of Br‐doped bismuth halide perovskite solar cells is found to be 0.136%, compared to 0.087% for pristine devices.
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