An initial study was performed on the feasibility of forming Ru2Si3 nanocrystals using an implantation and oxidation technique. Silicon (100) was implanted with Ru− ions at a fluence of 1.0×1017atoms/cm2 at an energy of 45keV. The implant was then oxidized at 900°C to segregate nanocrystals at the silicon/oxide interface using two methods, a dry and wet thermal oxidation. Oxidation times were chosen so the oxide thickness roughly matched for the two methods. Rutherford backscattering (RBS) with 1.5MeV alphas was used to monitor the concentration of Ru as a function of depth, and indicated both techniques resulted in segregated Ru. However, the Ru did not self-assemble into a thin layer as expected, but instead diffused further in to the sample for both cases. The results of this initial study and suggested techniques to overcome the enhanced diffusion are presented here.